JP2004530300A5 - - Google Patents

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Publication number
JP2004530300A5
JP2004530300A5 JP2002586384A JP2002586384A JP2004530300A5 JP 2004530300 A5 JP2004530300 A5 JP 2004530300A5 JP 2002586384 A JP2002586384 A JP 2002586384A JP 2002586384 A JP2002586384 A JP 2002586384A JP 2004530300 A5 JP2004530300 A5 JP 2004530300A5
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JP
Japan
Prior art keywords
insulating
layer
forming
gate
conductive
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2002586384A
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English (en)
Japanese (ja)
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JP4907838B2 (ja
JP2004530300A (ja
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Priority claimed from US09/842,788 external-priority patent/US6498062B2/en
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Publication of JP2004530300A publication Critical patent/JP2004530300A/ja
Publication of JP2004530300A5 publication Critical patent/JP2004530300A5/ja
Application granted granted Critical
Publication of JP4907838B2 publication Critical patent/JP4907838B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002586384A 2001-04-27 2002-04-26 窪み付きゲート構造を有するメモリデバイス Expired - Fee Related JP4907838B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/842,788 2001-04-27
US09/842,788 US6498062B2 (en) 2001-04-27 2001-04-27 DRAM access transistor
PCT/US2002/013196 WO2002089182A2 (en) 2001-04-27 2002-04-26 Recessed gat dram transistor and method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009211925A Division JP5361626B2 (ja) 2001-04-27 2009-09-14 窪み付きゲート構造を有するメモリデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2004530300A JP2004530300A (ja) 2004-09-30
JP2004530300A5 true JP2004530300A5 (enExample) 2006-01-05
JP4907838B2 JP4907838B2 (ja) 2012-04-04

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ID=25288239

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002586384A Expired - Fee Related JP4907838B2 (ja) 2001-04-27 2002-04-26 窪み付きゲート構造を有するメモリデバイス
JP2009211925A Expired - Lifetime JP5361626B2 (ja) 2001-04-27 2009-09-14 窪み付きゲート構造を有するメモリデバイスの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009211925A Expired - Lifetime JP5361626B2 (ja) 2001-04-27 2009-09-14 窪み付きゲート構造を有するメモリデバイスの製造方法

Country Status (7)

Country Link
US (2) US6498062B2 (enExample)
EP (1) EP1382059A2 (enExample)
JP (2) JP4907838B2 (enExample)
KR (1) KR100547227B1 (enExample)
CN (1) CN100375271C (enExample)
AU (1) AU2002303494A1 (enExample)
WO (1) WO2002089182A2 (enExample)

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