AU2002303494A1 - Recessed gat dram transistor and method - Google Patents

Recessed gat dram transistor and method

Info

Publication number
AU2002303494A1
AU2002303494A1 AU2002303494A AU2002303494A AU2002303494A1 AU 2002303494 A1 AU2002303494 A1 AU 2002303494A1 AU 2002303494 A AU2002303494 A AU 2002303494A AU 2002303494 A AU2002303494 A AU 2002303494A AU 2002303494 A1 AU2002303494 A1 AU 2002303494A1
Authority
AU
Australia
Prior art keywords
gat
recessed
dram transistor
dram
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002303494A
Other languages
English (en)
Inventor
Mark D. Durcan
Roger Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2002303494A1 publication Critical patent/AU2002303494A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AU2002303494A 2001-04-27 2002-04-26 Recessed gat dram transistor and method Abandoned AU2002303494A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/842,788 2001-04-27
US09/842,788 US6498062B2 (en) 2001-04-27 2001-04-27 DRAM access transistor
PCT/US2002/013196 WO2002089182A2 (en) 2001-04-27 2002-04-26 Recessed gat dram transistor and method

Publications (1)

Publication Number Publication Date
AU2002303494A1 true AU2002303494A1 (en) 2002-11-11

Family

ID=25288239

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002303494A Abandoned AU2002303494A1 (en) 2001-04-27 2002-04-26 Recessed gat dram transistor and method

Country Status (7)

Country Link
US (2) US6498062B2 (enExample)
EP (1) EP1382059A2 (enExample)
JP (2) JP4907838B2 (enExample)
KR (1) KR100547227B1 (enExample)
CN (1) CN100375271C (enExample)
AU (1) AU2002303494A1 (enExample)
WO (1) WO2002089182A2 (enExample)

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US7867851B2 (en) * 2005-08-30 2011-01-11 Micron Technology, Inc. Methods of forming field effect transistors on substrates
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US7867845B2 (en) * 2005-09-01 2011-01-11 Micron Technology, Inc. Transistor gate forming methods and transistor structures
US7687342B2 (en) 2005-09-01 2010-03-30 Micron Technology, Inc. Method of manufacturing a memory device
US7416943B2 (en) 2005-09-01 2008-08-26 Micron Technology, Inc. Peripheral gate stacks and recessed array gates
US7557032B2 (en) 2005-09-01 2009-07-07 Micron Technology, Inc. Silicided recessed silicon
KR100721245B1 (ko) * 2005-12-29 2007-05-22 동부일렉트로닉스 주식회사 트랜지스터 소자 및 형성 방법
US7700441B2 (en) 2006-02-02 2010-04-20 Micron Technology, Inc. Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates
KR100764439B1 (ko) * 2006-04-25 2007-10-05 주식회사 하이닉스반도체 반도체 소자의 형성 방법
US8008144B2 (en) 2006-05-11 2011-08-30 Micron Technology, Inc. Dual work function recessed access device and methods of forming
US8860174B2 (en) * 2006-05-11 2014-10-14 Micron Technology, Inc. Recessed antifuse structures and methods of making the same
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US7602001B2 (en) 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
US7772632B2 (en) * 2006-08-21 2010-08-10 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
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Also Published As

Publication number Publication date
WO2002089182A2 (en) 2002-11-07
JP4907838B2 (ja) 2012-04-04
CN100375271C (zh) 2008-03-12
US6780732B2 (en) 2004-08-24
KR20040015184A (ko) 2004-02-18
US20020160568A1 (en) 2002-10-31
KR100547227B1 (ko) 2006-01-31
WO2002089182A3 (en) 2003-11-06
US20030040154A1 (en) 2003-02-27
EP1382059A2 (en) 2004-01-21
US6498062B2 (en) 2002-12-24
JP2004530300A (ja) 2004-09-30
JP5361626B2 (ja) 2013-12-04
CN1520610A (zh) 2004-08-11
JP2010034567A (ja) 2010-02-12

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase