CN101263600B - 半导体元件的制造方法、以及由此方法形成的半导体元件 - Google Patents

半导体元件的制造方法、以及由此方法形成的半导体元件 Download PDF

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Publication number
CN101263600B
CN101263600B CN2004800392661A CN200480039266A CN101263600B CN 101263600 B CN101263600 B CN 101263600B CN 2004800392661 A CN2004800392661 A CN 2004800392661A CN 200480039266 A CN200480039266 A CN 200480039266A CN 101263600 B CN101263600 B CN 101263600B
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forming
region
semiconductor
buried layer
trench
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Expired - Fee Related
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CN2004800392661A
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CN101263600A (zh
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詹姆斯·A·基希格斯纳
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
CN2004800392661A 2003-12-31 2004-11-18 半导体元件的制造方法、以及由此方法形成的半导体元件 Expired - Fee Related CN101263600B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/750,125 2003-12-31
US10/750,125 US7084485B2 (en) 2003-12-31 2003-12-31 Method of manufacturing a semiconductor component, and semiconductor component formed thereby
PCT/US2004/038757 WO2005065089A2 (en) 2003-12-31 2004-11-18 Method of manufacturing a semiconductor component, and semiconductor component formed thereby

Publications (2)

Publication Number Publication Date
CN101263600A CN101263600A (zh) 2008-09-10
CN101263600B true CN101263600B (zh) 2010-10-27

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CN2004800392661A Expired - Fee Related CN101263600B (zh) 2003-12-31 2004-11-18 半导体元件的制造方法、以及由此方法形成的半导体元件

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US (1) US7084485B2 (enExample)
EP (1) EP1702349A4 (enExample)
JP (1) JP2007525831A (enExample)
KR (1) KR20060111650A (enExample)
CN (1) CN101263600B (enExample)
TW (1) TWI370520B (enExample)
WO (1) WO2005065089A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7358545B2 (en) * 2005-08-10 2008-04-15 United Microelectronics Corp. Bipolar junction transistor
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US8405127B2 (en) * 2008-02-20 2013-03-26 International Business Machines Corporation Method and apparatus for fabricating a heterojunction bipolar transistor
JP2011528187A (ja) * 2008-07-14 2011-11-10 エヌエックスピー ビー ヴィ トランジスタデバイス及びその製造方法
US8053866B2 (en) * 2009-08-06 2011-11-08 Freescale Semiconductor, Inc. Varactor structures
CN102403343B (zh) * 2010-09-08 2013-07-24 上海华虹Nec电子有限公司 BiCMOS工艺中的垂直寄生型PNP器件及制造方法
CN102544081B (zh) * 2010-12-16 2014-10-08 上海华虹宏力半导体制造有限公司 锗硅异质结npn三极管及制造方法
CN102412274B (zh) * 2011-01-13 2014-02-26 上海华虹宏力半导体制造有限公司 锗硅hbt工艺中垂直寄生型pnp器件及制造方法
CN102655170B (zh) * 2011-03-04 2014-08-13 上海华虹宏力半导体制造有限公司 锗硅异质结双极晶体管工艺中可变电容及制造方法
CN102956480A (zh) * 2011-08-31 2013-03-06 上海华虹Nec电子有限公司 有赝埋层的锗硅hbt降低集电极电阻的制造方法及器件
CN102412275B (zh) * 2011-09-22 2013-06-12 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中纵向PNP器件及制作方法
CN102412287B (zh) * 2011-11-08 2013-07-24 上海华虹Nec电子有限公司 锗硅hbt器件及其制造方法
CN103050518B (zh) * 2012-01-06 2015-04-08 上海华虹宏力半导体制造有限公司 锗硅异质结双极型晶体管及其制造方法
US10431654B2 (en) * 2015-06-25 2019-10-01 International Business Machines Corporation Extrinsic base doping for bipolar junction transistors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1231506A (zh) * 1998-04-07 1999-10-13 日本电气株式会社 高速和低寄生电容的半导体器件及其制造方法
US6472753B2 (en) * 2000-11-07 2002-10-29 Hitachi, Ltd. BICMOS semiconductor integrated circuit device and fabrication process thereof
CN1447442A (zh) * 2002-03-27 2003-10-08 罗姆股份有限公司 一种双极型晶体管及应用它的半导体装置

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JPS55132052A (en) * 1979-03-31 1980-10-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
US4674173A (en) * 1985-06-28 1987-06-23 Texas Instruments Incorporated Method for fabricating bipolar transistor
JPH02283028A (ja) * 1988-12-23 1990-11-20 Fujitsu Ltd 半導体装置及びその製造方法
GB2243717B (en) * 1990-05-01 1994-06-15 Stc Plc Bipolar transistor device
US5061646A (en) 1990-06-29 1991-10-29 Motorola, Inc. Method for forming a self-aligned bipolar transistor
JP2746499B2 (ja) * 1992-05-15 1998-05-06 三菱電機株式会社 半導体装置及びその製造方法
WO1995005679A1 (en) * 1993-08-17 1995-02-23 Peter Fred Blomley Bipolar transistors and method of making the same
US5465006A (en) * 1994-07-15 1995-11-07 Hewlett-Packard Company Bipolar stripe transistor structure
US5569613A (en) * 1995-02-01 1996-10-29 United Microelectronics Corp. Method of making bipolar junction transistor
JPH11312687A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 半導体装置およびその製造方法
US6239477B1 (en) * 1998-10-07 2001-05-29 Texas Instruments Incorporated Self-aligned transistor contact for epitaxial layers
JP2000252294A (ja) * 1999-03-01 2000-09-14 Nec Corp 半導体装置及びその製造方法
JP3322239B2 (ja) * 1999-04-30 2002-09-09 日本電気株式会社 半導体装置の製造方法
WO2001004960A1 (en) * 1999-07-07 2001-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for the same manufacturing
JP3748744B2 (ja) * 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP3621359B2 (ja) * 2001-05-25 2005-02-16 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP2003007713A (ja) * 2001-06-22 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
FR2829288A1 (fr) * 2001-09-06 2003-03-07 St Microelectronics Sa Structure de contact sur une region profonde formee dans un substrat semiconducteur

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CN1231506A (zh) * 1998-04-07 1999-10-13 日本电气株式会社 高速和低寄生电容的半导体器件及其制造方法
US6472753B2 (en) * 2000-11-07 2002-10-29 Hitachi, Ltd. BICMOS semiconductor integrated circuit device and fabrication process thereof
CN1447442A (zh) * 2002-03-27 2003-10-08 罗姆股份有限公司 一种双极型晶体管及应用它的半导体装置

Also Published As

Publication number Publication date
JP2007525831A (ja) 2007-09-06
TWI370520B (en) 2012-08-11
WO2005065089A3 (en) 2007-12-06
US7084485B2 (en) 2006-08-01
TW200525701A (en) 2005-08-01
KR20060111650A (ko) 2006-10-27
EP1702349A2 (en) 2006-09-20
CN101263600A (zh) 2008-09-10
EP1702349A4 (en) 2010-09-15
US20050145951A1 (en) 2005-07-07
WO2005065089A2 (en) 2005-07-21

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