JP2007525831A - 半導体部品の製造方法及びその方法により製造される半導体部品 - Google Patents

半導体部品の製造方法及びその方法により製造される半導体部品 Download PDF

Info

Publication number
JP2007525831A
JP2007525831A JP2006547004A JP2006547004A JP2007525831A JP 2007525831 A JP2007525831 A JP 2007525831A JP 2006547004 A JP2006547004 A JP 2006547004A JP 2006547004 A JP2006547004 A JP 2006547004A JP 2007525831 A JP2007525831 A JP 2007525831A
Authority
JP
Japan
Prior art keywords
forming
region
regions
buried layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006547004A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007525831A5 (enExample
Inventor
エー． キルヒゲスナー、ジェームス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2007525831A publication Critical patent/JP2007525831A/ja
Publication of JP2007525831A5 publication Critical patent/JP2007525831A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP2006547004A 2003-12-31 2004-11-18 半導体部品の製造方法及びその方法により製造される半導体部品 Pending JP2007525831A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/750,125 US7084485B2 (en) 2003-12-31 2003-12-31 Method of manufacturing a semiconductor component, and semiconductor component formed thereby
PCT/US2004/038757 WO2005065089A2 (en) 2003-12-31 2004-11-18 Method of manufacturing a semiconductor component, and semiconductor component formed thereby

Publications (2)

Publication Number Publication Date
JP2007525831A true JP2007525831A (ja) 2007-09-06
JP2007525831A5 JP2007525831A5 (enExample) 2007-12-06

Family

ID=34711212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006547004A Pending JP2007525831A (ja) 2003-12-31 2004-11-18 半導体部品の製造方法及びその方法により製造される半導体部品

Country Status (7)

Country Link
US (1) US7084485B2 (enExample)
EP (1) EP1702349A4 (enExample)
JP (1) JP2007525831A (enExample)
KR (1) KR20060111650A (enExample)
CN (1) CN101263600B (enExample)
TW (1) TWI370520B (enExample)
WO (1) WO2005065089A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011528187A (ja) * 2008-07-14 2011-11-10 エヌエックスピー ビー ヴィ トランジスタデバイス及びその製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7358545B2 (en) * 2005-08-10 2008-04-15 United Microelectronics Corp. Bipolar junction transistor
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US8405127B2 (en) * 2008-02-20 2013-03-26 International Business Machines Corporation Method and apparatus for fabricating a heterojunction bipolar transistor
US8053866B2 (en) * 2009-08-06 2011-11-08 Freescale Semiconductor, Inc. Varactor structures
CN102403343B (zh) * 2010-09-08 2013-07-24 上海华虹Nec电子有限公司 BiCMOS工艺中的垂直寄生型PNP器件及制造方法
CN102544081B (zh) * 2010-12-16 2014-10-08 上海华虹宏力半导体制造有限公司 锗硅异质结npn三极管及制造方法
CN102412274B (zh) * 2011-01-13 2014-02-26 上海华虹宏力半导体制造有限公司 锗硅hbt工艺中垂直寄生型pnp器件及制造方法
CN102655170B (zh) * 2011-03-04 2014-08-13 上海华虹宏力半导体制造有限公司 锗硅异质结双极晶体管工艺中可变电容及制造方法
CN102956480A (zh) * 2011-08-31 2013-03-06 上海华虹Nec电子有限公司 有赝埋层的锗硅hbt降低集电极电阻的制造方法及器件
CN102412275B (zh) * 2011-09-22 2013-06-12 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中纵向PNP器件及制作方法
CN102412287B (zh) * 2011-11-08 2013-07-24 上海华虹Nec电子有限公司 锗硅hbt器件及其制造方法
CN103050518B (zh) * 2012-01-06 2015-04-08 上海华虹宏力半导体制造有限公司 锗硅异质结双极型晶体管及其制造方法
US10431654B2 (en) * 2015-06-25 2019-10-01 International Business Machines Corporation Extrinsic base doping for bipolar junction transistors

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132052A (en) * 1979-03-31 1980-10-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPH02283028A (ja) * 1988-12-23 1990-11-20 Fujitsu Ltd 半導体装置及びその製造方法
JPH11312687A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 半導体装置およびその製造方法
JP2000252294A (ja) * 1999-03-01 2000-09-14 Nec Corp 半導体装置及びその製造方法
JP2000315742A (ja) * 1999-04-30 2000-11-14 Nec Corp 半導体装置の製造方法
WO2001004960A1 (en) * 1999-07-07 2001-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for the same manufacturing
JP2001118858A (ja) * 1999-10-18 2001-04-27 Nec Corp 半導体装置
JP2002353232A (ja) * 2001-05-25 2002-12-06 Nec Corp 半導体装置及びその製造方法
JP2003007713A (ja) * 2001-06-22 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4674173A (en) * 1985-06-28 1987-06-23 Texas Instruments Incorporated Method for fabricating bipolar transistor
GB2243717B (en) * 1990-05-01 1994-06-15 Stc Plc Bipolar transistor device
US5061646A (en) 1990-06-29 1991-10-29 Motorola, Inc. Method for forming a self-aligned bipolar transistor
JP2746499B2 (ja) * 1992-05-15 1998-05-06 三菱電機株式会社 半導体装置及びその製造方法
WO1995005679A1 (en) * 1993-08-17 1995-02-23 Peter Fred Blomley Bipolar transistors and method of making the same
US5465006A (en) * 1994-07-15 1995-11-07 Hewlett-Packard Company Bipolar stripe transistor structure
US5569613A (en) * 1995-02-01 1996-10-29 United Microelectronics Corp. Method of making bipolar junction transistor
JP3186691B2 (ja) * 1998-04-07 2001-07-11 日本電気株式会社 半導体装置及びその形成方法
US6239477B1 (en) * 1998-10-07 2001-05-29 Texas Instruments Incorporated Self-aligned transistor contact for epitaxial layers
JP2002141476A (ja) * 2000-11-07 2002-05-17 Hitachi Ltd ＢｉＣＭＯＳ半導体集積回路装置およびその製造方法
FR2829288A1 (fr) * 2001-09-06 2003-03-07 St Microelectronics Sa Structure de contact sur une region profonde formee dans un substrat semiconducteur
JP3761162B2 (ja) * 2002-03-27 2006-03-29 ローム株式会社 バイポーラトランジスタ及びこれを用いた半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132052A (en) * 1979-03-31 1980-10-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPH02283028A (ja) * 1988-12-23 1990-11-20 Fujitsu Ltd 半導体装置及びその製造方法
JPH11312687A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 半導体装置およびその製造方法
JP2000252294A (ja) * 1999-03-01 2000-09-14 Nec Corp 半導体装置及びその製造方法
JP2000315742A (ja) * 1999-04-30 2000-11-14 Nec Corp 半導体装置の製造方法
WO2001004960A1 (en) * 1999-07-07 2001-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for the same manufacturing
JP2001118858A (ja) * 1999-10-18 2001-04-27 Nec Corp 半導体装置
JP2002353232A (ja) * 2001-05-25 2002-12-06 Nec Corp 半導体装置及びその製造方法
JP2003007713A (ja) * 2001-06-22 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011528187A (ja) * 2008-07-14 2011-11-10 エヌエックスピー ビー ヴィ トランジスタデバイス及びその製造方法

Also Published As

Publication number Publication date
TWI370520B (en) 2012-08-11
WO2005065089A3 (en) 2007-12-06
CN101263600B (zh) 2010-10-27
US7084485B2 (en) 2006-08-01
TW200525701A (en) 2005-08-01
KR20060111650A (ko) 2006-10-27
EP1702349A2 (en) 2006-09-20
CN101263600A (zh) 2008-09-10
EP1702349A4 (en) 2010-09-15
US20050145951A1 (en) 2005-07-07
WO2005065089A2 (en) 2005-07-21

Similar Documents

Publication Publication Date Title
US8026146B2 (en) Method of manufacturing a bipolar transistor
US7022578B2 (en) Heterojunction bipolar transistor using reverse emitter window
US9059138B2 (en) Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure
US10825922B2 (en) Semiconductor device and method of manufacturing a semiconductor device
US7898061B2 (en) Structure for performance improvement in vertical bipolar transistors
US6156594A (en) Fabrication of bipolar/CMOS integrated circuits and of a capacitor
JP2007525831A (ja) 半導体部品の製造方法及びその方法により製造される半導体部品
US8872237B2 (en) Heterojunction bipolar transistor manufacturing method and integrated circuit comprising a heterojunction bipolar transistor
US6180442B1 (en) Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method
JP4807931B2 (ja) 狭いドーピング・プロファイルを有する高性能半導体デバイスを作成する構造および方法
US6586818B1 (en) Self-aligned silicon germanium heterojunction bipolar transistor device with electrostatic discharge crevice cover for salicide displacement
JP2001319936A (ja) バイポーラトランジスタ及びその製造方法
CN100550384C (zh) 具有npn和pnp双极晶体管的集成电路装置及相应的制造方法
US7939416B2 (en) Method of making bipolar transistor
EP1842229B1 (en) Bipolar transistor and method of fabricating the same
US20050037587A1 (en) Heterojunction bipolar transistor
JPH06318600A (ja) 半導体デバイス
JPH03190139A (ja) 半導体集積回路装置
JPH0758123A (ja) ラテラルバイポーラトランジスタの製造方法
SE527487C2 (sv) En metod för framställning av en kondensator och en monolitiskt integrerad krets innefattande en sådan kondensator
JP2005079518A (ja) 半導体装置及びその製造方法
JP2007173451A (ja) バイポーラトランジスタおよびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071016

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071016

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110715

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110726

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111021

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120222

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120403