KR20060111650A - 반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트 - Google Patents

반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트 Download PDF

Info

Publication number
KR20060111650A
KR20060111650A KR1020067013210A KR20067013210A KR20060111650A KR 20060111650 A KR20060111650 A KR 20060111650A KR 1020067013210 A KR1020067013210 A KR 1020067013210A KR 20067013210 A KR20067013210 A KR 20067013210A KR 20060111650 A KR20060111650 A KR 20060111650A
Authority
KR
South Korea
Prior art keywords
region
forming
semiconductor
trench
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067013210A
Other languages
English (en)
Korean (ko)
Inventor
제임스 에이. 키르치게스너
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20060111650A publication Critical patent/KR20060111650A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
KR1020067013210A 2003-12-31 2004-11-18 반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트 Ceased KR20060111650A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/750,125 2003-12-31
US10/750,125 US7084485B2 (en) 2003-12-31 2003-12-31 Method of manufacturing a semiconductor component, and semiconductor component formed thereby

Publications (1)

Publication Number Publication Date
KR20060111650A true KR20060111650A (ko) 2006-10-27

Family

ID=34711212

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067013210A Ceased KR20060111650A (ko) 2003-12-31 2004-11-18 반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트

Country Status (7)

Country Link
US (1) US7084485B2 (enExample)
EP (1) EP1702349A4 (enExample)
JP (1) JP2007525831A (enExample)
KR (1) KR20060111650A (enExample)
CN (1) CN101263600B (enExample)
TW (1) TWI370520B (enExample)
WO (1) WO2005065089A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7358545B2 (en) * 2005-08-10 2008-04-15 United Microelectronics Corp. Bipolar junction transistor
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US8405127B2 (en) * 2008-02-20 2013-03-26 International Business Machines Corporation Method and apparatus for fabricating a heterojunction bipolar transistor
JP2011528187A (ja) * 2008-07-14 2011-11-10 エヌエックスピー ビー ヴィ トランジスタデバイス及びその製造方法
US8053866B2 (en) * 2009-08-06 2011-11-08 Freescale Semiconductor, Inc. Varactor structures
CN102403343B (zh) * 2010-09-08 2013-07-24 上海华虹Nec电子有限公司 BiCMOS工艺中的垂直寄生型PNP器件及制造方法
CN102544081B (zh) * 2010-12-16 2014-10-08 上海华虹宏力半导体制造有限公司 锗硅异质结npn三极管及制造方法
CN102412274B (zh) * 2011-01-13 2014-02-26 上海华虹宏力半导体制造有限公司 锗硅hbt工艺中垂直寄生型pnp器件及制造方法
CN102655170B (zh) * 2011-03-04 2014-08-13 上海华虹宏力半导体制造有限公司 锗硅异质结双极晶体管工艺中可变电容及制造方法
CN102956480A (zh) * 2011-08-31 2013-03-06 上海华虹Nec电子有限公司 有赝埋层的锗硅hbt降低集电极电阻的制造方法及器件
CN102412275B (zh) * 2011-09-22 2013-06-12 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中纵向PNP器件及制作方法
CN102412287B (zh) * 2011-11-08 2013-07-24 上海华虹Nec电子有限公司 锗硅hbt器件及其制造方法
CN103050518B (zh) * 2012-01-06 2015-04-08 上海华虹宏力半导体制造有限公司 锗硅异质结双极型晶体管及其制造方法
US10431654B2 (en) * 2015-06-25 2019-10-01 International Business Machines Corporation Extrinsic base doping for bipolar junction transistors

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132052A (en) * 1979-03-31 1980-10-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
US4674173A (en) * 1985-06-28 1987-06-23 Texas Instruments Incorporated Method for fabricating bipolar transistor
JPH02283028A (ja) * 1988-12-23 1990-11-20 Fujitsu Ltd 半導体装置及びその製造方法
GB2243717B (en) * 1990-05-01 1994-06-15 Stc Plc Bipolar transistor device
US5061646A (en) 1990-06-29 1991-10-29 Motorola, Inc. Method for forming a self-aligned bipolar transistor
JP2746499B2 (ja) * 1992-05-15 1998-05-06 三菱電機株式会社 半導体装置及びその製造方法
WO1995005679A1 (en) * 1993-08-17 1995-02-23 Peter Fred Blomley Bipolar transistors and method of making the same
US5465006A (en) * 1994-07-15 1995-11-07 Hewlett-Packard Company Bipolar stripe transistor structure
US5569613A (en) * 1995-02-01 1996-10-29 United Microelectronics Corp. Method of making bipolar junction transistor
JP3186691B2 (ja) * 1998-04-07 2001-07-11 日本電気株式会社 半導体装置及びその形成方法
JPH11312687A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 半導体装置およびその製造方法
US6239477B1 (en) * 1998-10-07 2001-05-29 Texas Instruments Incorporated Self-aligned transistor contact for epitaxial layers
JP2000252294A (ja) * 1999-03-01 2000-09-14 Nec Corp 半導体装置及びその製造方法
JP3322239B2 (ja) * 1999-04-30 2002-09-09 日本電気株式会社 半導体装置の製造方法
WO2001004960A1 (en) * 1999-07-07 2001-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for the same manufacturing
JP3748744B2 (ja) * 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2002141476A (ja) * 2000-11-07 2002-05-17 Hitachi Ltd ＢｉＣＭＯＳ半導体集積回路装置およびその製造方法
JP3621359B2 (ja) * 2001-05-25 2005-02-16 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP2003007713A (ja) * 2001-06-22 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
FR2829288A1 (fr) * 2001-09-06 2003-03-07 St Microelectronics Sa Structure de contact sur une region profonde formee dans un substrat semiconducteur
JP3761162B2 (ja) * 2002-03-27 2006-03-29 ローム株式会社 バイポーラトランジスタ及びこれを用いた半導体装置

Also Published As

Publication number Publication date
JP2007525831A (ja) 2007-09-06
TWI370520B (en) 2012-08-11
WO2005065089A3 (en) 2007-12-06
CN101263600B (zh) 2010-10-27
US7084485B2 (en) 2006-08-01
TW200525701A (en) 2005-08-01
EP1702349A2 (en) 2006-09-20
CN101263600A (zh) 2008-09-10
EP1702349A4 (en) 2010-09-15
US20050145951A1 (en) 2005-07-07
WO2005065089A2 (en) 2005-07-21

Similar Documents

Publication Publication Date Title
US6838348B2 (en) Integrated process for high voltage and high performance silicon-on-insulator bipolar devices
US7932541B2 (en) High performance collector-up bipolar transistor
JP3301062B2 (ja) 隆起したソース及びドレインを有する高性能ｍｏｓｆｅｔ素子及びその形成方法
US7022578B2 (en) Heterojunction bipolar transistor using reverse emitter window
US9059138B2 (en) Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure
US8026146B2 (en) Method of manufacturing a bipolar transistor
US6927428B2 (en) Lateral heterojunction bipolar transistor
US10825922B2 (en) Semiconductor device and method of manufacturing a semiconductor device
US6724066B2 (en) High breakdown voltage transistor and method
KR20050004874A (ko) 반도체 디바이스 제조 방법
KR20060111650A (ko) 반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트
US6180442B1 (en) Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method
KR100455829B1 (ko) 초자기정렬 이종접합 바이폴라 소자 및 그 제조방법
JP2005510867A (ja) 半導体デバイスおよび該半導体デバイスの製造方法
US6864542B2 (en) Bipolar transistor manufacturing method
JP2001319936A (ja) バイポーラトランジスタ及びその製造方法
US20130099288A1 (en) SiGe HBT and Manufacturing Method Thereof
US8907453B2 (en) Parasitic lateral PNP transistor and manufacturing method thereof
KR100263790B1 (ko) 반도체 장치 및 그 제조방법
US20090212394A1 (en) Bipolar transistor and method of fabricating the same
US7115465B2 (en) Method for manufacturing a bipolar transistor
US20030042574A1 (en) Contact structure on a deep region formed in a semiconductor substrate
JPH0758123A (ja) ラテラルバイポーラトランジスタの製造方法
JP2003188179A (ja) 高速バイポーラ型半導体装置及びその製造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20060630

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20091117

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20110411

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20111229

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20110411

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20120201

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20111229

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20130902

Appeal identifier: 2012101001173

Request date: 20120201

PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20120201

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20120201

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20110613

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20091117

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

Comment text: Report of Result of Re-examination before a Trial

Patent event code: PB06011S01D

Patent event date: 20120405

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20120201

Effective date: 20130902

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20130902

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20120201

Decision date: 20130902

Appeal identifier: 2012101001173

PS0901 Examination by remand of revocation
S901 Examination by remand of revocation
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20130904

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140310

Patent event code: PE09021S01D

PS0601 Decision to reject again after remand of revocation

Patent event date: 20140520

Comment text: Decision to Refuse Application

Patent event code: PS06013S01D

Patent event date: 20140310

Comment text: Notification of reason for refusal

Patent event code: PS06012S01I

Patent event date: 20130904

Comment text: Notification of reason for refusal

Patent event code: PS06012S01I

Patent event date: 20130903

Comment text: Notice of Trial Decision (Remand of Revocation)

Patent event code: PS06011S01I

Patent event date: 20110411

Comment text: Notification of reason for refusal

Patent event code: PS06012S01I

S601 Decision to reject again after remand of revocation