JP2011505697A5 - - Google Patents

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JP2011505697A5
JP2011505697A5 JP2010535978A JP2010535978A JP2011505697A5 JP 2011505697 A5 JP2011505697 A5 JP 2011505697A5 JP 2010535978 A JP2010535978 A JP 2010535978A JP 2010535978 A JP2010535978 A JP 2010535978A JP 2011505697 A5 JP2011505697 A5 JP 2011505697A5
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JP2010535978A
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JP5498394B2 (ja
JP2011505697A (ja
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Priority claimed from US11/948,235 external-priority patent/US8288756B2/en
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JP2010535978A 2007-11-30 2008-11-21 トランジスタ及びその形成方法 Active JP5498394B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/948,235 2007-11-30
US11/948,235 US8288756B2 (en) 2007-11-30 2007-11-30 Hetero-structured, inverted-T field effect transistor
PCT/US2008/013041 WO2009070252A1 (en) 2007-11-30 2008-11-21 A hetero-structured, inverted-t field effect transistor

Publications (3)

Publication Number Publication Date
JP2011505697A JP2011505697A (ja) 2011-02-24
JP2011505697A5 true JP2011505697A5 (enExample) 2011-06-23
JP5498394B2 JP5498394B2 (ja) 2014-05-21

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JP2010535978A Active JP5498394B2 (ja) 2007-11-30 2008-11-21 トランジスタ及びその形成方法

Country Status (7)

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US (2) US8288756B2 (enExample)
EP (1) EP2220686A1 (enExample)
JP (1) JP5498394B2 (enExample)
KR (1) KR101392436B1 (enExample)
CN (1) CN101884107B (enExample)
TW (1) TWI450339B (enExample)
WO (1) WO2009070252A1 (enExample)

Families Citing this family (12)

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JP5285947B2 (ja) * 2008-04-11 2013-09-11 株式会社東芝 半導体装置、およびその製造方法
US8101486B2 (en) * 2009-10-07 2012-01-24 Globalfoundries Inc. Methods for forming isolated fin structures on bulk semiconductor material
US8815677B2 (en) * 2011-06-14 2014-08-26 Intermolecular, Inc. Method of processing MIM capacitors to reduce leakage current
CN102956686A (zh) * 2011-08-18 2013-03-06 中国科学院微电子研究所 一种硅基锗纳米结构衬底及其制备方法
FR2982421A1 (fr) * 2011-11-09 2013-05-10 Soitec Silicon On Insulator Finfet a trois grilles sur seoi avec modulation de tension de seuil
US9583398B2 (en) 2012-06-29 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having FinFETS with different fin profiles
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
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CN104103506B (zh) * 2013-04-11 2018-02-13 中国科学院微电子研究所 半导体器件制造方法
US20170309623A1 (en) * 2016-04-21 2017-10-26 Globalfoundries Inc. Method, apparatus, and system for increasing drive current of finfet device
CN111383917B (zh) * 2018-12-29 2023-02-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN118213404B (zh) * 2024-03-06 2025-10-03 西安电子科技大学广州研究院 一种增强型p沟道氮化镓场效应晶体管及其制备方法

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