KR101392436B1 - 헤테로 구조의 반전된 ｔ형 전계 효과 트랜지스터 - Google Patents

헤테로 구조의 반전된 ｔ형 전계 효과 트랜지스터 Download PDF

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KR101392436B1
KR101392436B1 KR1020107011883A KR20107011883A KR101392436B1 KR 101392436 B1 KR101392436 B1 KR 101392436B1 KR 1020107011883 A KR1020107011883 A KR 1020107011883A KR 20107011883 A KR20107011883 A KR 20107011883A KR 101392436 B1 KR101392436 B1 KR 101392436B1
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semiconductor material
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KR20100098516A (ko
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헤만트 아드히카리
러스티 해리스
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020107011883A 2007-11-30 2008-11-21 헤테로 구조의 반전된 ｔ형 전계 효과 트랜지스터 Active KR101392436B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/948,235 2007-11-30
US11/948,235 US8288756B2 (en) 2007-11-30 2007-11-30 Hetero-structured, inverted-T field effect transistor

Publications (2)

Publication Number Publication Date
KR20100098516A KR20100098516A (ko) 2010-09-07
KR101392436B1 true KR101392436B1 (ko) 2014-05-07

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KR1020107011883A Active KR101392436B1 (ko) 2007-11-30 2008-11-21 헤테로 구조의 반전된 ｔ형 전계 효과 트랜지스터

Country Status (7)

Country Link
US (2) US8288756B2 (enExample)
EP (1) EP2220686A1 (enExample)
JP (1) JP5498394B2 (enExample)
KR (1) KR101392436B1 (enExample)
CN (1) CN101884107B (enExample)
TW (1) TWI450339B (enExample)
WO (1) WO2009070252A1 (enExample)

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JP5285947B2 (ja) * 2008-04-11 2013-09-11 株式会社東芝 半導体装置、およびその製造方法
US8101486B2 (en) * 2009-10-07 2012-01-24 Globalfoundries Inc. Methods for forming isolated fin structures on bulk semiconductor material
US8815677B2 (en) * 2011-06-14 2014-08-26 Intermolecular, Inc. Method of processing MIM capacitors to reduce leakage current
CN102956686A (zh) * 2011-08-18 2013-03-06 中国科学院微电子研究所 一种硅基锗纳米结构衬底及其制备方法
FR2982421A1 (fr) * 2011-11-09 2013-05-10 Soitec Silicon On Insulator Finfet a trois grilles sur seoi avec modulation de tension de seuil
US9583398B2 (en) * 2012-06-29 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having FinFETS with different fin profiles
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
CN103871885B (zh) * 2012-12-18 2016-08-10 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的制作方法
CN104103506B (zh) * 2013-04-11 2018-02-13 中国科学院微电子研究所 半导体器件制造方法
US20170309623A1 (en) * 2016-04-21 2017-10-26 Globalfoundries Inc. Method, apparatus, and system for increasing drive current of finfet device
CN111383917B (zh) * 2018-12-29 2023-02-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN118213404B (zh) * 2024-03-06 2025-10-03 西安电子科技大学广州研究院 一种增强型p沟道氮化镓场效应晶体管及其制备方法

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JP2007258485A (ja) 2006-03-23 2007-10-04 Toshiba Corp 半導体装置及びその製造方法

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JP2007258485A (ja) 2006-03-23 2007-10-04 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20120309141A1 (en) 2012-12-06
CN101884107A (zh) 2010-11-10
TW200937535A (en) 2009-09-01
US20090140294A1 (en) 2009-06-04
CN101884107B (zh) 2013-02-13
US8815658B2 (en) 2014-08-26
US8288756B2 (en) 2012-10-16
KR20100098516A (ko) 2010-09-07
TWI450339B (zh) 2014-08-21
JP5498394B2 (ja) 2014-05-21
JP2011505697A (ja) 2011-02-24
EP2220686A1 (en) 2010-08-25
WO2009070252A1 (en) 2009-06-04

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