CN101884107B - 异质结构倒t场效晶体管 - Google Patents

异质结构倒t场效晶体管 Download PDF

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Publication number
CN101884107B
CN101884107B CN2008801156452A CN200880115645A CN101884107B CN 101884107 B CN101884107 B CN 101884107B CN 2008801156452 A CN2008801156452 A CN 2008801156452A CN 200880115645 A CN200880115645 A CN 200880115645A CN 101884107 B CN101884107 B CN 101884107B
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layer
semiconductor material
mobility
forming
feature
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CN101884107A (zh
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H·阿迪卡里
R·哈里斯
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2008801156452A 2007-11-30 2008-11-21 异质结构倒t场效晶体管 Active CN101884107B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/948,235 US8288756B2 (en) 2007-11-30 2007-11-30 Hetero-structured, inverted-T field effect transistor
US11/948,235 2007-11-30
PCT/US2008/013041 WO2009070252A1 (en) 2007-11-30 2008-11-21 A hetero-structured, inverted-t field effect transistor

Publications (2)

Publication Number Publication Date
CN101884107A CN101884107A (zh) 2010-11-10
CN101884107B true CN101884107B (zh) 2013-02-13

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CN2008801156452A Active CN101884107B (zh) 2007-11-30 2008-11-21 异质结构倒t场效晶体管

Country Status (7)

Country Link
US (2) US8288756B2 (enExample)
EP (1) EP2220686A1 (enExample)
JP (1) JP5498394B2 (enExample)
KR (1) KR101392436B1 (enExample)
CN (1) CN101884107B (enExample)
TW (1) TWI450339B (enExample)
WO (1) WO2009070252A1 (enExample)

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US8101486B2 (en) * 2009-10-07 2012-01-24 Globalfoundries Inc. Methods for forming isolated fin structures on bulk semiconductor material
US8815677B2 (en) * 2011-06-14 2014-08-26 Intermolecular, Inc. Method of processing MIM capacitors to reduce leakage current
CN102956686A (zh) * 2011-08-18 2013-03-06 中国科学院微电子研究所 一种硅基锗纳米结构衬底及其制备方法
FR2982421A1 (fr) * 2011-11-09 2013-05-10 Soitec Silicon On Insulator Finfet a trois grilles sur seoi avec modulation de tension de seuil
US9583398B2 (en) 2012-06-29 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having FinFETS with different fin profiles
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
CN103871885B (zh) * 2012-12-18 2016-08-10 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的制作方法
CN104103506B (zh) * 2013-04-11 2018-02-13 中国科学院微电子研究所 半导体器件制造方法
US20170309623A1 (en) * 2016-04-21 2017-10-26 Globalfoundries Inc. Method, apparatus, and system for increasing drive current of finfet device
CN111383917B (zh) * 2018-12-29 2023-02-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN118213404B (zh) * 2024-03-06 2025-10-03 西安电子科技大学广州研究院 一种增强型p沟道氮化镓场效应晶体管及其制备方法

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FR2861501A1 (fr) * 2003-10-22 2005-04-29 Commissariat Energie Atomique Dispositif microelectronique a effet de champ apte a former un ou plusiseurs canaux de transistors

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US6855583B1 (en) * 2003-08-05 2005-02-15 Advanced Micro Devices, Inc. Method for forming tri-gate FinFET with mesa isolation
FR2861501A1 (fr) * 2003-10-22 2005-04-29 Commissariat Energie Atomique Dispositif microelectronique a effet de champ apte a former un ou plusiseurs canaux de transistors

Also Published As

Publication number Publication date
US8815658B2 (en) 2014-08-26
US20090140294A1 (en) 2009-06-04
EP2220686A1 (en) 2010-08-25
JP2011505697A (ja) 2011-02-24
KR20100098516A (ko) 2010-09-07
JP5498394B2 (ja) 2014-05-21
US20120309141A1 (en) 2012-12-06
TW200937535A (en) 2009-09-01
KR101392436B1 (ko) 2014-05-07
TWI450339B (zh) 2014-08-21
WO2009070252A1 (en) 2009-06-04
US8288756B2 (en) 2012-10-16
CN101884107A (zh) 2010-11-10

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