JP2006512774A5 - - Google Patents

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JP2006512774A5
JP2006512774A5 JP2004565751A JP2004565751A JP2006512774A5 JP 2006512774 A5 JP2006512774 A5 JP 2006512774A5 JP 2004565751 A JP2004565751 A JP 2004565751A JP 2004565751 A JP2004565751 A JP 2004565751A JP 2006512774 A5 JP2006512774 A5 JP 2006512774A5
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region
well region
semiconductor device
well
conductive
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JP2004565751A
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JP4688501B2 (ja
JP2006512774A (ja
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Priority claimed from US10/334,272 external-priority patent/US6936898B2/en
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JP2004565751A 2002-12-31 2003-12-29 半導体デバイスのウェル領域 Expired - Fee Related JP4688501B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/334,272 US6936898B2 (en) 2002-12-31 2002-12-31 Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US10/334,272 2002-12-31
PCT/US2003/041402 WO2004061967A2 (en) 2002-12-31 2003-12-29 Well regions of semiconductor devices

Publications (3)

Publication Number Publication Date
JP2006512774A JP2006512774A (ja) 2006-04-13
JP2006512774A5 true JP2006512774A5 (enExample) 2007-02-15
JP4688501B2 JP4688501B2 (ja) 2011-05-25

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JP2004565751A Expired - Fee Related JP4688501B2 (ja) 2002-12-31 2003-12-29 半導体デバイスのウェル領域

Country Status (5)

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US (9) US6936898B2 (enExample)
JP (1) JP4688501B2 (enExample)
CN (2) CN101604663B (enExample)
AU (1) AU2003300399A1 (enExample)
WO (1) WO2004061967A2 (enExample)

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