JP4688501B2 - 半導体デバイスのウェル領域 - Google Patents

半導体デバイスのウェル領域 Download PDF

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JP4688501B2
JP4688501B2 JP2004565751A JP2004565751A JP4688501B2 JP 4688501 B2 JP4688501 B2 JP 4688501B2 JP 2004565751 A JP2004565751 A JP 2004565751A JP 2004565751 A JP2004565751 A JP 2004565751A JP 4688501 B2 JP4688501 B2 JP 4688501B2
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region
well
well region
semiconductor device
conductive
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JP2006512774A5 (enExample
JP2006512774A (ja
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ブール，ジェイムズ，ビー．
ペルハム，マイク
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インテレクチュアル ベンチャー ファンディング エルエルシー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0156—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
JP2004565751A 2002-12-31 2003-12-29 半導体デバイスのウェル領域 Expired - Fee Related JP4688501B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/334,272 US6936898B2 (en) 2002-12-31 2002-12-31 Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US10/334,272 2002-12-31
PCT/US2003/041402 WO2004061967A2 (en) 2002-12-31 2003-12-29 Well regions of semiconductor devices

Publications (3)

Publication Number Publication Date
JP2006512774A JP2006512774A (ja) 2006-04-13
JP2006512774A5 JP2006512774A5 (enExample) 2007-02-15
JP4688501B2 true JP4688501B2 (ja) 2011-05-25

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JP2004565751A Expired - Fee Related JP4688501B2 (ja) 2002-12-31 2003-12-29 半導体デバイスのウェル領域

Country Status (5)

Country Link
US (9) US6936898B2 (enExample)
JP (1) JP4688501B2 (enExample)
CN (2) CN101604663B (enExample)
AU (1) AU2003300399A1 (enExample)
WO (1) WO2004061967A2 (enExample)

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US20080136499A1 (en) 2008-06-12
CN100502005C (zh) 2009-06-17
US20170194421A9 (en) 2017-07-06
US7211478B1 (en) 2007-05-01
WO2004061967A2 (en) 2004-07-22
US20080135905A1 (en) 2008-06-12
US9251865B2 (en) 2016-02-02
CN101604663B (zh) 2011-08-03
WO2004061967A3 (en) 2004-09-16
US7332763B1 (en) 2008-02-19
US8415730B2 (en) 2013-04-09
US7863688B2 (en) 2011-01-04
AU2003300399A1 (en) 2004-07-29
US20160163793A1 (en) 2016-06-09
US7645664B1 (en) 2010-01-12
US7098512B1 (en) 2006-08-29
AU2003300399A8 (en) 2004-07-29
CN1732571A (zh) 2006-02-08
US6936898B2 (en) 2005-08-30
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US20040124475A1 (en) 2004-07-01
US20100072575A1 (en) 2010-03-25

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