JP5012286B2 - 酸化膜電界効果トランジスタ - Google Patents
酸化膜電界効果トランジスタ Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims description 44
- 239000012535 impurity Substances 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 50
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 12
- 239000003870 refractory metal Substances 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 168
- 229910010271 silicon carbide Inorganic materials 0.000 description 157
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 116
- 238000004519 manufacturing process Methods 0.000 description 36
- 238000000137 annealing Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 25
- 238000005468 ion implantation Methods 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000010936 titanium Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
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- 230000015556 catabolic process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
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- 229910052721 tungsten Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
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- 238000000151 deposition Methods 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Ceramic Engineering (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
S.M.Sze、"Physics of Semiconductor Devices"、John Wiley & Sons,Inc、1981年、p.489−490 四戸孝、「SiCパワーデバイス」、東芝レビュー、株式会社東芝、2004年、Vol.59、No.2、p49−53
図1は、本発明の一実施の形態である実施の形態1におけるDMOS構造を有するSiC系MOSFETを示す概略断面図である。図1を参照して、実施の形態1におけるDMOS構造を有するSiC系MOSFET(酸化膜電界効果トランジスタ)について説明する。
次に、本発明の実施の形態2について説明する。図13は、本発明の一実施の形態である実施の形態2におけるDMOS構造を有するSiC系MOSFETを示す概略断面図である。
次に、本発明の実施の形態3について説明する。図14は、本発明の一実施の形態である実施の形態3におけるDMOS構造を有するSiC系MOSFETを示す概略断面図である。
Claims (5)
- 第1導電型のSiC基板と、
前記SiC基板上に形成された前記第1導電型のSiC層と、
前記SiC層において、前記SiC基板側の主面である第1の主面とは反対側の主面である第2の主面を含むように形成された、前記第1導電型とは導電型の異なる第2導電型の第2導電型領域と、
前記SiC層において、前記第2の主面を含むように、前記第2導電型領域とは離れて形成された前記第2導電型の他の第2導電型領域と、
前記SiC層の前記第2の主面を含む領域に形成され、前記SiC層よりも高濃度の前記第1導電型の不純物を含む複数の高濃度第1導電型領域と、
前記第2の主面に接触するように前記SiC層上に形成され、絶縁体からなる絶縁層とを備え、
前記第2導電型領域においては、前記複数の高濃度第1導電型領域のうちの一対の組であって、前記第2導電型領域の中に配置される前記組のうちの一方の高濃度第1導電型領域と、前記第2導電型領域の内部から前記第2導電型領域の外部にまで延在する前記組のうちの他方の高濃度第1導電型領域とが、前記第2導電型領域の内部に位置するチャネル領域を挟んで互いに対向するように配置され、
前記他の第2導電型領域においては、前記複数の高濃度第1導電型領域のうちの、一対の前記組を構成する領域と異なる領域を少なくとも1つ含む一対の他の組であって、前記他の第2導電型領域の中に配置される前記他の組のうちの一方の高濃度第1導電型領域と、前記他の第2導電型領域の内部から前記他の第2導電型領域の外部にまで延在する前記他の組のうちの他方の高濃度第1導電型領域とが、前記他の第2導電型領域の内部に位置する他のチャネル領域を挟んで互いに対向するように配置され、
前記絶縁層は、前記チャネル領域上および前記他のチャネル領域上から前記第2導電型領域と前記他の第2導電型領域とに挟まれた領域であるウインドウ領域上にまで延在し、
前記絶縁層の厚みは、前記チャネル領域上および前記他のチャネル領域上よりも、前記ウインドウ領域上において大きくなっており、
前記絶縁層の厚みは、前記チャネル領域および前記他のチャネル領域の端部上において、前記チャネル領域上および前記他のチャネル領域上から前記ウインドウ領域上および前記ウインドウ領域とは反対側の領域上に向けて、前記SiC層側および前記SiC層とは反対側の両側に厚みを増すように徐々に大きくなっている、酸化膜電界効果トランジスタ。 - 前記チャネル領域および前記他のチャネル領域上の前記絶縁層上に、前記絶縁層に接触するように形成され、導電体からなる電極をさらに備え、
前記電極は、高融点金属または高融点金属の珪化物からなっている、請求項1に記載の酸化膜電界効果トランジスタ。 - 前記チャネル領域および前記他のチャネル領域上の前記絶縁層上に、前記絶縁層に接触するように形成され、導電体からなる電極をさらに備え、
前記電極は、
ポリシリコンからなるポリシリコン層と、
高融点金属からなる高融点金属層とを有している、請求項1に記載の酸化膜電界効果トランジスタ。 - 前記チャネル領域上の電極と、前記他のチャネル領域上の電極とは、分離して形成されている、請求項2または3に記載の酸化膜電界効果トランジスタ。
- 前記複数の高濃度第1導電型領域は、前記第1導電型の不純物としてヒ素およびリンの少なくともいずれか一方を含んでいる、請求項1〜4のいずれか1項に記載の酸化膜電界効果トランジスタ。
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JP5679821B2 (ja) * | 2008-12-23 | 2015-03-04 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP5616665B2 (ja) * | 2010-03-30 | 2014-10-29 | ローム株式会社 | 半導体装置 |
US8674439B2 (en) | 2010-08-02 | 2014-03-18 | Microsemi Corporation | Low loss SiC MOSFET |
JP5574923B2 (ja) | 2010-11-10 | 2014-08-20 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US9123798B2 (en) * | 2012-12-12 | 2015-09-01 | General Electric Company | Insulating gate field effect transistor device and method for providing the same |
JP2014236120A (ja) * | 2013-06-03 | 2014-12-15 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
WO2014204491A1 (en) * | 2013-06-21 | 2014-12-24 | Microsemi Corporation | Low loss sic mosfet |
WO2016013182A1 (ja) * | 2014-07-24 | 2016-01-28 | パナソニックIpマネジメント株式会社 | 炭化珪素半導体素子およびその製造方法 |
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JP2017139292A (ja) * | 2016-02-02 | 2017-08-10 | 富士電機株式会社 | 半導体装置及びその製造方法 |
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JP2020036045A (ja) * | 2019-11-29 | 2020-03-05 | ローム株式会社 | 半導体装置 |
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---|---|---|---|---|
JPS645070A (en) * | 1987-06-26 | 1989-01-10 | Nec Corp | Vertical insulated gate field effect transistor |
JPH03132042A (ja) * | 1989-10-18 | 1991-06-05 | Sanyo Electric Co Ltd | 縦型mosfetの製造方法 |
US5273922A (en) * | 1992-09-11 | 1993-12-28 | Motorola, Inc. | High speed, low gate/drain capacitance DMOS device |
JPH0799312A (ja) * | 1993-02-22 | 1995-04-11 | Texas Instr Inc <Ti> | 半導体装置とその製法 |
JP4488668B2 (ja) * | 1995-04-11 | 2010-06-23 | 株式会社東芝 | 電力用半導体装置 |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
JP4450122B2 (ja) * | 1999-11-17 | 2010-04-14 | 株式会社デンソー | 炭化珪素半導体装置 |
JP4750933B2 (ja) * | 2000-09-28 | 2011-08-17 | 株式会社東芝 | 薄型パンチスルー型パワーデバイス |
JP3939583B2 (ja) * | 2002-04-24 | 2007-07-04 | 日産自動車株式会社 | 電界効果トランジスタの製造方法 |
JP4188637B2 (ja) * | 2002-08-05 | 2008-11-26 | 独立行政法人産業技術総合研究所 | 半導体装置 |
JP4304332B2 (ja) * | 2003-10-03 | 2009-07-29 | 独立行政法人産業技術総合研究所 | 炭化ケイ素半導体装置 |
JP4986408B2 (ja) * | 2005-04-22 | 2012-07-25 | ローム株式会社 | 半導体装置およびその製造方法 |
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