CA2722942A1 - Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making - Google Patents

Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making Download PDF

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Publication number
CA2722942A1
CA2722942A1 CA2722942A CA2722942A CA2722942A1 CA 2722942 A1 CA2722942 A1 CA 2722942A1 CA 2722942 A CA2722942 A CA 2722942A CA 2722942 A CA2722942 A CA 2722942A CA 2722942 A1 CA2722942 A1 CA 2722942A1
Authority
CA
Canada
Prior art keywords
layer
dopant concentration
raised region
semiconductor material
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2722942A
Other languages
English (en)
French (fr)
Inventor
Igor Sankin
David C. Sheridan
Joseph Neil Merrett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Semisouth Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Laboratories Inc filed Critical Semisouth Laboratories Inc
Publication of CA2722942A1 publication Critical patent/CA2722942A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CA2722942A 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making Abandoned CA2722942A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/117,121 2008-05-08
US12/117,121 US7977713B2 (en) 2008-05-08 2008-05-08 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
PCT/US2009/042983 WO2009137578A2 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Publications (1)

Publication Number Publication Date
CA2722942A1 true CA2722942A1 (en) 2009-11-12

Family

ID=41265372

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2722942A Abandoned CA2722942A1 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Country Status (9)

Country Link
US (2) US7977713B2 (enExample)
EP (1) EP2289103A4 (enExample)
JP (1) JP5593308B2 (enExample)
KR (1) KR20110018891A (enExample)
CN (1) CN102084484B (enExample)
AU (1) AU2009244273A1 (enExample)
CA (1) CA2722942A1 (enExample)
TW (1) TWI415258B (enExample)
WO (1) WO2009137578A2 (enExample)

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CN109791951B (zh) * 2016-09-09 2023-08-01 美国联合碳化硅公司 具有改进的阈值电压控制的沟槽垂直jfet
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Also Published As

Publication number Publication date
TWI415258B (zh) 2013-11-11
CN102084484B (zh) 2013-06-05
TW200952175A (en) 2009-12-16
JP5593308B2 (ja) 2014-09-17
US7977713B2 (en) 2011-07-12
EP2289103A4 (en) 2013-07-31
EP2289103A2 (en) 2011-03-02
US8507335B2 (en) 2013-08-13
US20110217829A1 (en) 2011-09-08
JP2011521446A (ja) 2011-07-21
CN102084484A (zh) 2011-06-01
WO2009137578A3 (en) 2010-03-04
WO2009137578A2 (en) 2009-11-12
US20090278177A1 (en) 2009-11-12
KR20110018891A (ko) 2011-02-24
AU2009244273A1 (en) 2009-11-12

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EEER Examination request

Effective date: 20140227

FZDE Discontinued

Effective date: 20150506