JP5593308B2 - 促進された導電性を有する非パンチスルー半導体チャネルを備えた半導体素子及び製法 - Google Patents

促進された導電性を有する非パンチスルー半導体チャネルを備えた半導体素子及び製法 Download PDF

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JP5593308B2
JP5593308B2 JP2011508627A JP2011508627A JP5593308B2 JP 5593308 B2 JP5593308 B2 JP 5593308B2 JP 2011508627 A JP2011508627 A JP 2011508627A JP 2011508627 A JP2011508627 A JP 2011508627A JP 5593308 B2 JP5593308 B2 JP 5593308B2
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semiconductor material
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JP2011521446A (ja
JP2011521446A5 (enExample
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イゴー サンキン
デイビッド シー． シェリダン
ジョセフ ニール メレット
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パワー・インテグレーションズ・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2011508627A 2008-05-08 2009-05-06 促進された導電性を有する非パンチスルー半導体チャネルを備えた半導体素子及び製法 Expired - Fee Related JP5593308B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/117,121 2008-05-08
US12/117,121 US7977713B2 (en) 2008-05-08 2008-05-08 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
PCT/US2009/042983 WO2009137578A2 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Publications (3)

Publication Number Publication Date
JP2011521446A JP2011521446A (ja) 2011-07-21
JP2011521446A5 JP2011521446A5 (enExample) 2012-06-21
JP5593308B2 true JP5593308B2 (ja) 2014-09-17

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JP2011508627A Expired - Fee Related JP5593308B2 (ja) 2008-05-08 2009-05-06 促進された導電性を有する非パンチスルー半導体チャネルを備えた半導体素子及び製法

Country Status (9)

Country Link
US (2) US7977713B2 (enExample)
EP (1) EP2289103A4 (enExample)
JP (1) JP5593308B2 (enExample)
KR (1) KR20110018891A (enExample)
CN (1) CN102084484B (enExample)
AU (1) AU2009244273A1 (enExample)
CA (1) CA2722942A1 (enExample)
TW (1) TWI415258B (enExample)
WO (1) WO2009137578A2 (enExample)

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CN109791951B (zh) * 2016-09-09 2023-08-01 美国联合碳化硅公司 具有改进的阈值电压控制的沟槽垂直jfet
JP6787367B2 (ja) 2017-07-26 2020-11-18 株式会社デンソー 半導体装置
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Also Published As

Publication number Publication date
TWI415258B (zh) 2013-11-11
CN102084484B (zh) 2013-06-05
TW200952175A (en) 2009-12-16
US7977713B2 (en) 2011-07-12
EP2289103A4 (en) 2013-07-31
EP2289103A2 (en) 2011-03-02
US8507335B2 (en) 2013-08-13
US20110217829A1 (en) 2011-09-08
JP2011521446A (ja) 2011-07-21
CN102084484A (zh) 2011-06-01
WO2009137578A3 (en) 2010-03-04
WO2009137578A2 (en) 2009-11-12
US20090278177A1 (en) 2009-11-12
KR20110018891A (ko) 2011-02-24
AU2009244273A1 (en) 2009-11-12
CA2722942A1 (en) 2009-11-12

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