JP2019531601A - 改善された閾値電圧制御を有するトレンチ垂直jfet - Google Patents
改善された閾値電圧制御を有するトレンチ垂直jfet Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 9
- 238000002513 implantation Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 46
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000012792 core layer Substances 0.000 description 9
- 239000007943 implant Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
Description
1e15*1μm=1e11cm−2
2*1e17cm−3*0.2μm=4e12cm−2
(実施例)
Claims (17)
- トレンチJFETであって、
裏面ドレイン領域と上面ドリフト領域とを有する基板であって、前記裏面ドレイン領域及び前記上面ドリフト領域は第1のドーピング型を有するものである、前記基板と、
前記上面ドリフト領域から延伸するアクティブセルのメサであって、前記アクティブセルのメサは前記上面ドリフト領域内へのトレンチの切り込みによって分離されているものである、前記アクティブセルのメサと、
前記メサの頂部にあるソース領域であって、前記第1のドーピング型を有しているものである、前記ソース領域と、
前記トレンチ表面上のゲート領域であって、第2のドーピング型を有するものであり、この第2のドーピング型は前記第1のドーピング型と反対である、前記ゲート領域と、
垂直チャネル領域であって、この垂直チャネル領域は、実質的に前記メサの高さを延伸し、前記第1のドーピング型を有するものである、前記垂直チャネル領域と、
メサコア領域であって、このメサコア領域は、前記第1のドーピング型を有し、前記メサの中心から延伸しているものであり、当該メサコア領域の中心でのドーピング濃度が前記上面ドリフト領域のドーピング濃度よりも少なくとも10倍低いものである、前記メサコア領域と
を有し、
前記垂直チャネル領域は、前記トレンチの垂直壁上の前記ゲート領域の部分と前記メサコア領域との間側方に、前記垂直チャネル領域を、延伸し、前記垂直チャネル領域のピークドーピング濃度はメサコア領域の中心のドーピングレベルよりも少なくとも10倍高いものである、
トレンチJFET。 - 請求項1に記載のトレンチJFETにおいて、前記基板はさらに、炭化ケイ素を含有するものである、トレンチJFET。
- 請求項1に記載のトレンチJFETにおいて、前記基板はさらに窒化ガリウムを含有するものである、トレンチJFET。
- 請求項1に記載のトレンチJFETにおいて、前記第1のドーピング型はn型であり、且つ、前記第2のドーピング型はp型である、トレンチJFET。
- 請求項1に記載のトレンチJFETにおいて、前記垂直チャネル領域の前記ピークドーピング濃度は、メサコア領域の中心のドーピングレベルよりも少なくとも20倍高いものである、トレンチJFET。
- 請求項1に記載のトレンチJFETにおいて、前記垂直チャネル領域の前記ピークドーピング濃度は、メサコア領域の中心のドーピングレベルよりも少なくとも50倍高いものである、トレンチJFET。
- 請求項1に記載のトレンチJFETにおいて、前記垂直チャネル領域は、前記メサの底部を越えて前記ゲート領域部分の下に前記トレンチの水平方向中央に向かって延伸するものである、トレンチJFET。
- 請求項7に記載のトレンチJFETにおいて、前記基板はさらに、炭化ケイ素を含むものである、トレンチJFET。
- 請求項7に記載のトレンチJFETにおいて、前記基板が炭化ケイ素をさらに含む、トレンチJFET。
- 請求項7に記載のトレンチJFETにおいて、前記基板はさらに、窒化ガリウムを含むものである、トレンチJFET。
- 請求項7に記載のトレンチJFETにおいて、前記第1のドーピング型はn型であり、前記第2のドーピング型はp型である、トレンチJFET。
- 請求項7に記載のトレンチJFETにおいて、前記垂直チャネル領域の前記ピークドーピング濃度は、メサコア領域の中心のドーピングレベルより少なくとも20倍高いものである、トレンチJFET。
- 請求項7に記載のトレンチJFETにおいて、前記垂直チャネル領域の前記ピークドーピング濃度は、メサコア領域の中心のドーピングレベルより少なくとも50倍高いものである、トレンチJFET。
- 請求項1に記載のトレンチJFETにおいて、前記垂直チャネル領域は、前記メサの底部を越え、前記ゲート領域の下に前記トレンチの底部に沿って横方向に延伸するものである、トレンチJFET。
- 請求項14に記載のトレンチJFETにおいて、前記基板はさらに、炭化ケイ素を含むものである、トレンチJFET。
- 請求項14に記載のトレンチJFETにおいて、前記基板はさらに、窒化ガリウムを含むものである、トレンチJFET。
- 請求項14に記載のトレンチJFETにおいて、前記第1のドーピング型はn型であり、前記第2のドーピング型はp型である、トレンチJFET。
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US15/260,548 | 2016-09-09 | ||
US15/260,548 US10396215B2 (en) | 2015-03-10 | 2016-09-09 | Trench vertical JFET with improved threshold voltage control |
PCT/US2017/050384 WO2018048972A1 (en) | 2016-09-09 | 2017-09-07 | Trench vertical jfet with improved threshold voltage control |
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JP (1) | JP7118050B2 (ja) |
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EP4228009A1 (en) * | 2022-02-11 | 2023-08-16 | Infineon Technologies Austria AG | Trench junction field effect transistor comprising a mesa region |
Citations (6)
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US20070187715A1 (en) * | 2003-09-25 | 2007-08-16 | Zhao Jian H | Power junction field effect power transistor with highly vertical channel and uniform channel opening |
US20090278177A1 (en) * | 2008-05-08 | 2009-11-12 | Semisouth Laboratories, Inc. | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
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CN109791951A (zh) | 2019-05-21 |
CN116705861A (zh) | 2023-09-05 |
CN109791951B (zh) | 2023-08-01 |
WO2018048972A1 (en) | 2018-03-15 |
JP7118050B2 (ja) | 2022-08-15 |
EP3510637A1 (en) | 2019-07-17 |
EP3510637A4 (en) | 2020-04-15 |
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