JP2020043301A5 - - Google Patents

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Publication number
JP2020043301A5
JP2020043301A5 JP2018171732A JP2018171732A JP2020043301A5 JP 2020043301 A5 JP2020043301 A5 JP 2020043301A5 JP 2018171732 A JP2018171732 A JP 2018171732A JP 2018171732 A JP2018171732 A JP 2018171732A JP 2020043301 A5 JP2020043301 A5 JP 2020043301A5
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JP
Japan
Prior art keywords
layer
field stop
collector
maximum
drift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018171732A
Other languages
English (en)
Japanese (ja)
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JP7010184B2 (ja
JP2020043301A (ja
Filing date
Publication date
Priority claimed from JP2018171732A external-priority patent/JP7010184B2/ja
Priority to JP2018171732A priority Critical patent/JP7010184B2/ja
Application filed filed Critical
Priority to PCT/JP2019/033934 priority patent/WO2020054446A1/ja
Priority to CN201980059059.9A priority patent/CN112689902B/zh
Publication of JP2020043301A publication Critical patent/JP2020043301A/ja
Publication of JP2020043301A5 publication Critical patent/JP2020043301A5/ja
Priority to US17/198,807 priority patent/US20210217845A1/en
Publication of JP7010184B2 publication Critical patent/JP7010184B2/ja
Application granted granted Critical
Priority to US19/224,607 priority patent/US20250294826A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2018171732A 2018-09-13 2018-09-13 半導体装置 Active JP7010184B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018171732A JP7010184B2 (ja) 2018-09-13 2018-09-13 半導体装置
PCT/JP2019/033934 WO2020054446A1 (ja) 2018-09-13 2019-08-29 半導体装置
CN201980059059.9A CN112689902B (zh) 2018-09-13 2019-08-29 半导体装置
US17/198,807 US20210217845A1 (en) 2018-09-13 2021-03-11 Semiconductor device
US19/224,607 US20250294826A1 (en) 2018-09-13 2025-05-30 Igbt including field stop layer formed between collector layer and drift layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018171732A JP7010184B2 (ja) 2018-09-13 2018-09-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2020043301A JP2020043301A (ja) 2020-03-19
JP2020043301A5 true JP2020043301A5 (enExample) 2021-01-28
JP7010184B2 JP7010184B2 (ja) 2022-01-26

Family

ID=69778270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018171732A Active JP7010184B2 (ja) 2018-09-13 2018-09-13 半導体装置

Country Status (4)

Country Link
US (2) US20210217845A1 (enExample)
JP (1) JP7010184B2 (enExample)
CN (1) CN112689902B (enExample)
WO (1) WO2020054446A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113644123B (zh) * 2021-06-28 2024-09-06 华为技术有限公司 半导体器件及相关芯片和制备方法
CN117836952A (zh) * 2022-02-17 2024-04-05 富士电机株式会社 半导体装置及其制造方法
JP2024064037A (ja) * 2022-10-27 2024-05-14 株式会社デンソー 半導体装置
JP2024080317A (ja) * 2022-12-02 2024-06-13 株式会社デンソー 半導体装置とその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763915A (en) * 1996-02-27 1998-06-09 Magemos Corporation DMOS transistors having trenched gate oxide
DE10055446B4 (de) * 1999-11-26 2012-08-23 Fuji Electric Co., Ltd. Halbleiterbauelement und Verfahren zu seiner Herstellung
US7538412B2 (en) 2006-06-30 2009-05-26 Infineon Technologies Austria Ag Semiconductor device with a field stop zone
JP2011166034A (ja) * 2010-02-12 2011-08-25 Fuji Electric Co Ltd 半導体装置の製造方法
DE112010005443B4 (de) * 2010-04-02 2019-03-14 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung mit einem Halbleitersubstrat mit einem Diodenbereich und einem IGBT-Bereich sowie Verfahren zu dessen Herstellung
CN104157648B (zh) * 2010-07-27 2017-05-17 株式会社电装 具有开关元件和续流二极管的半导体装置及其控制方法
JP5621621B2 (ja) * 2011-01-24 2014-11-12 三菱電機株式会社 半導体装置と半導体装置の製造方法
JP2012204636A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
JP5874723B2 (ja) * 2011-05-18 2016-03-02 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2013235891A (ja) * 2012-05-07 2013-11-21 Denso Corp 半導体装置
JP6277814B2 (ja) * 2014-03-25 2018-02-14 株式会社デンソー 半導体装置
JP6720569B2 (ja) * 2015-02-25 2020-07-08 株式会社デンソー 半導体装置
CN112490281B (zh) * 2015-06-17 2025-02-25 富士电机株式会社 半导体装置
JP6443267B2 (ja) * 2015-08-28 2018-12-26 株式会社デンソー 半導体装置
JP2017208413A (ja) * 2016-05-17 2017-11-24 株式会社デンソー 半導体装置

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