JP7010184B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7010184B2
JP7010184B2 JP2018171732A JP2018171732A JP7010184B2 JP 7010184 B2 JP7010184 B2 JP 7010184B2 JP 2018171732 A JP2018171732 A JP 2018171732A JP 2018171732 A JP2018171732 A JP 2018171732A JP 7010184 B2 JP7010184 B2 JP 7010184B2
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JP
Japan
Prior art keywords
layer
collector
semiconductor device
carrier concentration
collector layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018171732A
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English (en)
Japanese (ja)
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JP2020043301A5 (enExample
JP2020043301A (ja
Inventor
征典 宮田
秀司 米田
賢 妹尾
裕貴 薬師川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2018171732A priority Critical patent/JP7010184B2/ja
Priority to PCT/JP2019/033934 priority patent/WO2020054446A1/ja
Priority to CN201980059059.9A priority patent/CN112689902B/zh
Publication of JP2020043301A publication Critical patent/JP2020043301A/ja
Publication of JP2020043301A5 publication Critical patent/JP2020043301A5/ja
Priority to US17/198,807 priority patent/US20210217845A1/en
Application granted granted Critical
Publication of JP7010184B2 publication Critical patent/JP7010184B2/ja
Priority to US19/224,607 priority patent/US20250294826A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP2018171732A 2018-09-13 2018-09-13 半導体装置 Active JP7010184B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018171732A JP7010184B2 (ja) 2018-09-13 2018-09-13 半導体装置
PCT/JP2019/033934 WO2020054446A1 (ja) 2018-09-13 2019-08-29 半導体装置
CN201980059059.9A CN112689902B (zh) 2018-09-13 2019-08-29 半导体装置
US17/198,807 US20210217845A1 (en) 2018-09-13 2021-03-11 Semiconductor device
US19/224,607 US20250294826A1 (en) 2018-09-13 2025-05-30 Igbt including field stop layer formed between collector layer and drift layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018171732A JP7010184B2 (ja) 2018-09-13 2018-09-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2020043301A JP2020043301A (ja) 2020-03-19
JP2020043301A5 JP2020043301A5 (enExample) 2021-01-28
JP7010184B2 true JP7010184B2 (ja) 2022-01-26

Family

ID=69778270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018171732A Active JP7010184B2 (ja) 2018-09-13 2018-09-13 半導体装置

Country Status (4)

Country Link
US (2) US20210217845A1 (enExample)
JP (1) JP7010184B2 (enExample)
CN (1) CN112689902B (enExample)
WO (1) WO2020054446A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113644123B (zh) * 2021-06-28 2024-09-06 华为技术有限公司 半导体器件及相关芯片和制备方法
CN117836952A (zh) * 2022-02-17 2024-04-05 富士电机株式会社 半导体装置及其制造方法
JP2024064037A (ja) * 2022-10-27 2024-05-14 株式会社デンソー 半導体装置
JP2024080317A (ja) * 2022-12-02 2024-06-13 株式会社デンソー 半導体装置とその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080001257A1 (en) 2006-06-30 2008-01-03 Infineon Technologies Austria Ag Semiconductor device with a field stop zone
JP2012156207A (ja) 2011-01-24 2012-08-16 Mitsubishi Electric Corp 半導体装置と半導体装置の製造方法
WO2016204126A1 (ja) 2015-06-17 2016-12-22 富士電機株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763915A (en) * 1996-02-27 1998-06-09 Magemos Corporation DMOS transistors having trenched gate oxide
DE10055446B4 (de) * 1999-11-26 2012-08-23 Fuji Electric Co., Ltd. Halbleiterbauelement und Verfahren zu seiner Herstellung
JP2011166034A (ja) * 2010-02-12 2011-08-25 Fuji Electric Co Ltd 半導体装置の製造方法
DE112010005443B4 (de) * 2010-04-02 2019-03-14 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung mit einem Halbleitersubstrat mit einem Diodenbereich und einem IGBT-Bereich sowie Verfahren zu dessen Herstellung
CN104157648B (zh) * 2010-07-27 2017-05-17 株式会社电装 具有开关元件和续流二极管的半导体装置及其控制方法
JP2012204636A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
JP5874723B2 (ja) * 2011-05-18 2016-03-02 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2013235891A (ja) * 2012-05-07 2013-11-21 Denso Corp 半導体装置
JP6277814B2 (ja) * 2014-03-25 2018-02-14 株式会社デンソー 半導体装置
JP6720569B2 (ja) * 2015-02-25 2020-07-08 株式会社デンソー 半導体装置
JP6443267B2 (ja) * 2015-08-28 2018-12-26 株式会社デンソー 半導体装置
JP2017208413A (ja) * 2016-05-17 2017-11-24 株式会社デンソー 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080001257A1 (en) 2006-06-30 2008-01-03 Infineon Technologies Austria Ag Semiconductor device with a field stop zone
JP2012156207A (ja) 2011-01-24 2012-08-16 Mitsubishi Electric Corp 半導体装置と半導体装置の製造方法
WO2016204126A1 (ja) 2015-06-17 2016-12-22 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
CN112689902A (zh) 2021-04-20
CN112689902B (zh) 2024-09-27
US20210217845A1 (en) 2021-07-15
US20250294826A1 (en) 2025-09-18
JP2020043301A (ja) 2020-03-19
WO2020054446A1 (ja) 2020-03-19

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