CN112689902B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN112689902B
CN112689902B CN201980059059.9A CN201980059059A CN112689902B CN 112689902 B CN112689902 B CN 112689902B CN 201980059059 A CN201980059059 A CN 201980059059A CN 112689902 B CN112689902 B CN 112689902B
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China
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layer
collector
collector layer
carrier concentration
drift
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CN201980059059.9A
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English (en)
Chinese (zh)
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CN112689902A (zh
Inventor
宫田征典
米田秀司
药师川裕贵
妹尾贤
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

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  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CN201980059059.9A 2018-09-13 2019-08-29 半导体装置 Active CN112689902B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018171732A JP7010184B2 (ja) 2018-09-13 2018-09-13 半導体装置
JP2018-171732 2018-09-13
PCT/JP2019/033934 WO2020054446A1 (ja) 2018-09-13 2019-08-29 半導体装置

Publications (2)

Publication Number Publication Date
CN112689902A CN112689902A (zh) 2021-04-20
CN112689902B true CN112689902B (zh) 2024-09-27

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ID=69778270

Family Applications (1)

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CN201980059059.9A Active CN112689902B (zh) 2018-09-13 2019-08-29 半导体装置

Country Status (4)

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US (2) US20210217845A1 (enExample)
JP (1) JP7010184B2 (enExample)
CN (1) CN112689902B (enExample)
WO (1) WO2020054446A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113644123B (zh) * 2021-06-28 2024-09-06 华为技术有限公司 半导体器件及相关芯片和制备方法
CN117836952A (zh) * 2022-02-17 2024-04-05 富士电机株式会社 半导体装置及其制造方法
JP2024064037A (ja) * 2022-10-27 2024-05-14 株式会社デンソー 半導体装置
JP2024080317A (ja) * 2022-12-02 2024-06-13 株式会社デンソー 半導体装置とその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763915A (en) * 1996-02-27 1998-06-09 Magemos Corporation DMOS transistors having trenched gate oxide
DE10055446B4 (de) * 1999-11-26 2012-08-23 Fuji Electric Co., Ltd. Halbleiterbauelement und Verfahren zu seiner Herstellung
US7538412B2 (en) 2006-06-30 2009-05-26 Infineon Technologies Austria Ag Semiconductor device with a field stop zone
JP2011166034A (ja) * 2010-02-12 2011-08-25 Fuji Electric Co Ltd 半導体装置の製造方法
DE112010005443B4 (de) * 2010-04-02 2019-03-14 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung mit einem Halbleitersubstrat mit einem Diodenbereich und einem IGBT-Bereich sowie Verfahren zu dessen Herstellung
CN104157648B (zh) * 2010-07-27 2017-05-17 株式会社电装 具有开关元件和续流二极管的半导体装置及其控制方法
JP5621621B2 (ja) * 2011-01-24 2014-11-12 三菱電機株式会社 半導体装置と半導体装置の製造方法
JP2012204636A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
JP5874723B2 (ja) * 2011-05-18 2016-03-02 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2013235891A (ja) * 2012-05-07 2013-11-21 Denso Corp 半導体装置
JP6277814B2 (ja) * 2014-03-25 2018-02-14 株式会社デンソー 半導体装置
JP6720569B2 (ja) * 2015-02-25 2020-07-08 株式会社デンソー 半導体装置
CN112490281B (zh) * 2015-06-17 2025-02-25 富士电机株式会社 半导体装置
JP6443267B2 (ja) * 2015-08-28 2018-12-26 株式会社デンソー 半導体装置
JP2017208413A (ja) * 2016-05-17 2017-11-24 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
CN112689902A (zh) 2021-04-20
JP7010184B2 (ja) 2022-01-26
US20210217845A1 (en) 2021-07-15
US20250294826A1 (en) 2025-09-18
JP2020043301A (ja) 2020-03-19
WO2020054446A1 (ja) 2020-03-19

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