JP2017208413A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2017208413A
JP2017208413A JP2016098875A JP2016098875A JP2017208413A JP 2017208413 A JP2017208413 A JP 2017208413A JP 2016098875 A JP2016098875 A JP 2016098875A JP 2016098875 A JP2016098875 A JP 2016098875A JP 2017208413 A JP2017208413 A JP 2017208413A
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JP
Japan
Prior art keywords
layer
carrier injection
drift
injection layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016098875A
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English (en)
Japanese (ja)
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JP2017208413A5 (enExample
Inventor
拓 水上
Taku MIZUKAMI
拓 水上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2016098875A priority Critical patent/JP2017208413A/ja
Priority to PCT/JP2017/015874 priority patent/WO2017199679A1/ja
Priority to CN201780029794.6A priority patent/CN109155334B/zh
Publication of JP2017208413A publication Critical patent/JP2017208413A/ja
Publication of JP2017208413A5 publication Critical patent/JP2017208413A5/ja
Priority to US16/188,533 priority patent/US11217580B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10D62/138—Pedestal collectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016098875A 2016-05-17 2016-05-17 半導体装置 Pending JP2017208413A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016098875A JP2017208413A (ja) 2016-05-17 2016-05-17 半導体装置
PCT/JP2017/015874 WO2017199679A1 (ja) 2016-05-17 2017-04-20 半導体装置
CN201780029794.6A CN109155334B (zh) 2016-05-17 2017-04-20 半导体装置
US16/188,533 US11217580B2 (en) 2016-05-17 2018-11-13 Semiconductor device including insulated gate bipolar transistor element and freewheeling diode element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016098875A JP2017208413A (ja) 2016-05-17 2016-05-17 半導体装置

Publications (2)

Publication Number Publication Date
JP2017208413A true JP2017208413A (ja) 2017-11-24
JP2017208413A5 JP2017208413A5 (enExample) 2018-08-30

Family

ID=60325161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016098875A Pending JP2017208413A (ja) 2016-05-17 2016-05-17 半導体装置

Country Status (4)

Country Link
US (1) US11217580B2 (enExample)
JP (1) JP2017208413A (enExample)
CN (1) CN109155334B (enExample)
WO (1) WO2017199679A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112689902A (zh) * 2018-09-13 2021-04-20 株式会社电装 半导体装置
CN114203828A (zh) * 2020-09-17 2022-03-18 株式会社东芝 半导体装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6935731B2 (ja) 2017-11-16 2021-09-15 株式会社デンソー 半導体装置
CN110137249A (zh) 2018-02-09 2019-08-16 苏州东微半导体有限公司 Igbt功率器件及其制造方法
WO2020174799A1 (ja) 2019-02-27 2020-09-03 富士電機株式会社 半導体装置
WO2020208995A1 (ja) * 2019-04-08 2020-10-15 住友電気工業株式会社 半導体装置
GB2584698B (en) * 2019-06-12 2022-09-14 Mqsemi Ag Non-punch-through reverse-conducting power semiconductor device and method for producing same
CN110797403B (zh) * 2019-10-18 2023-08-01 上海睿驱微电子科技有限公司 一种rc-igbt半导体装置
CN110797404B (zh) * 2019-10-18 2023-11-28 上海睿驱微电子科技有限公司 一种rc-igbt半导体器件
DE102020123847B4 (de) * 2020-09-14 2025-11-20 Infineon Technologies Ag Feldstoppgebiet enthaltende leistungs-halbleiterdiode und verfahren
DE102021115971A1 (de) * 2021-06-21 2022-12-22 Infineon Technologies Ag Feldstoppgebiet enthaltende halbleitervorrichtung
CN117650165B (zh) * 2023-10-31 2024-05-31 海信家电集团股份有限公司 半导体装置
CN116632053B (zh) * 2023-07-25 2024-01-30 深圳市美浦森半导体有限公司 一种rc-igbt器件的控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013021142A (ja) * 2011-07-12 2013-01-31 Toyota Central R&D Labs Inc 半導体装置
JP2013080796A (ja) * 2011-10-03 2013-05-02 Toyota Central R&D Labs Inc 半導体装置
JP2014103376A (ja) * 2012-09-24 2014-06-05 Toshiba Corp 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5157201B2 (ja) 2006-03-22 2013-03-06 株式会社デンソー 半導体装置
JP5678469B2 (ja) 2010-05-07 2015-03-04 株式会社デンソー 半導体装置
JP5582102B2 (ja) * 2010-07-01 2014-09-03 株式会社デンソー 半導体装置
JP5321669B2 (ja) 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
JP2013235891A (ja) 2012-05-07 2013-11-21 Denso Corp 半導体装置
JP5981859B2 (ja) 2013-02-15 2016-08-31 株式会社豊田中央研究所 ダイオード及びダイオードを内蔵する半導体装置
JP6158123B2 (ja) * 2014-03-14 2017-07-05 株式会社東芝 半導体装置
JP6269860B2 (ja) * 2014-12-17 2018-01-31 三菱電機株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013021142A (ja) * 2011-07-12 2013-01-31 Toyota Central R&D Labs Inc 半導体装置
JP2013080796A (ja) * 2011-10-03 2013-05-02 Toyota Central R&D Labs Inc 半導体装置
JP2014103376A (ja) * 2012-09-24 2014-06-05 Toshiba Corp 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112689902A (zh) * 2018-09-13 2021-04-20 株式会社电装 半导体装置
CN114203828A (zh) * 2020-09-17 2022-03-18 株式会社东芝 半导体装置
US12336267B2 (en) 2020-09-17 2025-06-17 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
CN109155334B (zh) 2021-11-05
US11217580B2 (en) 2022-01-04
WO2017199679A1 (ja) 2017-11-23
US20190081163A1 (en) 2019-03-14
CN109155334A (zh) 2019-01-04

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