JP6736531B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6736531B2
JP6736531B2 JP2017176263A JP2017176263A JP6736531B2 JP 6736531 B2 JP6736531 B2 JP 6736531B2 JP 2017176263 A JP2017176263 A JP 2017176263A JP 2017176263 A JP2017176263 A JP 2017176263A JP 6736531 B2 JP6736531 B2 JP 6736531B2
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JP
Japan
Prior art keywords
region
trench
igbt
type
diode
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Application number
JP2017176263A
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English (en)
Japanese (ja)
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JP2019054070A5 (enExample
JP2019054070A (ja
Inventor
亮平 下條
亮平 下條
中村　和敏
和敏 中村
紀夫 安原
紀夫 安原
朋宏 玉城
朋宏 玉城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2017176263A priority Critical patent/JP6736531B2/ja
Priority to US15/912,600 priority patent/US10418470B2/en
Priority to CN201810181594.9A priority patent/CN109509789B/zh
Publication of JP2019054070A publication Critical patent/JP2019054070A/ja
Publication of JP2019054070A5 publication Critical patent/JP2019054070A5/ja
Application granted granted Critical
Publication of JP6736531B2 publication Critical patent/JP6736531B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2017176263A 2017-09-14 2017-09-14 半導体装置 Active JP6736531B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017176263A JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置
US15/912,600 US10418470B2 (en) 2017-09-14 2018-03-06 Semiconductor device having IGBT portion and diode portion
CN201810181594.9A CN109509789B (zh) 2017-09-14 2018-03-06 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017176263A JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2019054070A JP2019054070A (ja) 2019-04-04
JP2019054070A5 JP2019054070A5 (enExample) 2019-09-19
JP6736531B2 true JP6736531B2 (ja) 2020-08-05

Family

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Family Applications (1)

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JP2017176263A Active JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置

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US (1) US10418470B2 (enExample)
JP (1) JP6736531B2 (enExample)
CN (1) CN109509789B (enExample)

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JP7061983B2 (ja) * 2019-04-26 2022-05-02 三菱電機株式会社 半導体装置
EP3748851B1 (en) * 2019-06-07 2023-03-15 Infineon Technologies AG Semiconductor device and semiconductor arrangement comprising semiconductor devices
DE102019133030B4 (de) * 2019-12-04 2023-05-04 Infineon Technologies Austria Ag Bipolartransistor mit isoliertem gate enthaltende halbleitervorrichtung und herstellungsverfahren
DE102019135545A1 (de) * 2019-12-20 2021-06-24 Infineon Technologies Ag Leistungshalbleitervorrichtung
CN111211167B (zh) * 2020-01-09 2022-04-01 杭州电子科技大学 一种消除负阻效应的rc-igbt器件结构
JP7198236B2 (ja) * 2020-03-13 2022-12-28 株式会社東芝 半導体装置
JP7488778B2 (ja) 2021-01-29 2024-05-22 株式会社東芝 半導体装置
JP7770122B2 (ja) * 2021-07-05 2025-11-14 三菱電機株式会社 半導体装置
JP2024024822A (ja) * 2022-08-10 2024-02-26 株式会社東芝 半導体パッケージ

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DE10122364B4 (de) * 2001-05-09 2006-10-19 Infineon Technologies Ag Kompensationsbauelement, Schaltungsanordnung und Verfahren
GB0122120D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Edge termination in MOS transistors
JP5103830B2 (ja) * 2006-08-28 2012-12-19 三菱電機株式会社 絶縁ゲート型半導体装置
JP5206541B2 (ja) * 2008-04-01 2013-06-12 株式会社デンソー 半導体装置およびその製造方法
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JP2016167539A (ja) * 2015-03-10 2016-09-15 株式会社東芝 半導体装置
DE102015104723B4 (de) * 2015-03-27 2017-09-21 Infineon Technologies Ag Verfahren zum Herstellen von ersten und zweiten dotierten Gebieten und von Rekombinationsgebieten in einem Halbleiterkörper
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DE102016125879B3 (de) * 2016-12-29 2018-06-21 Infineon Technologies Ag Halbleitervorrichtung mit einer IGBT-Region und einer nicht schaltbaren Diodenregion
JP6652515B2 (ja) * 2017-02-09 2020-02-26 株式会社東芝 半導体装置
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JP6891560B2 (ja) * 2017-03-15 2021-06-18 富士電機株式会社 半導体装置
JP2018160594A (ja) * 2017-03-23 2018-10-11 株式会社東芝 半導体装置
JP2018182254A (ja) * 2017-04-21 2018-11-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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JP7143575B2 (ja) * 2017-07-18 2022-09-29 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20190081162A1 (en) 2019-03-14
CN109509789A (zh) 2019-03-22
JP2019054070A (ja) 2019-04-04
CN109509789B (zh) 2021-08-17
US10418470B2 (en) 2019-09-17

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