WO2012115541A3 - Light-emitting nitride semiconductor device comprising substrate having through holes - Google Patents

Light-emitting nitride semiconductor device comprising substrate having through holes Download PDF

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Publication number
WO2012115541A3
WO2012115541A3 PCT/RU2012/000147 RU2012000147W WO2012115541A3 WO 2012115541 A3 WO2012115541 A3 WO 2012115541A3 RU 2012000147 W RU2012000147 W RU 2012000147W WO 2012115541 A3 WO2012115541 A3 WO 2012115541A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
light
layer
holes
semiconductor device
Prior art date
Application number
PCT/RU2012/000147
Other languages
French (fr)
Other versions
WO2012115541A2 (en
Inventor
Yury Georgievich Shreter
Yury Toomasovich Rebane
Aleksey Vladimirovich Mironov
Original Assignee
Yury Georgievich Shreter
Yury Toomasovich Rebane
Aleksey Vladimirovich Mironov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov filed Critical Yury Georgievich Shreter
Publication of WO2012115541A2 publication Critical patent/WO2012115541A2/en
Publication of WO2012115541A3 publication Critical patent/WO2012115541A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention proposes a light-emitting semiconductor device (300) comprising: a substrate (301), a first layer from n-type semiconductor (201) formed on the substrate (301), a second layer from p-type semiconductor (203); an active layer (202) arranged between the first and second layers (201, 203); a conductive layer (204) arranged on the second layer (203), a first contact (302) applied on the substrate (301), a second contact (303) applied on the conductive layer (204), wherein the substrate (301) comprises at least one through hole made in the form of truncated inverted pyramid, wherein the first, second, active and conductive layers (201, 203, 202, 204) are applied both on the horizontal areas of the substrate (301), and on the internal faces of the holes. Using of the truncated pyramids leads to relatively large coefficients of conversion of electrical energy to light, and light extraction.
PCT/RU2012/000147 2011-02-24 2012-02-24 Light-emitting semiconductor device WO2012115541A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2011106966/28A RU2494498C2 (en) 2011-02-24 2011-02-24 Semiconductor light-emitting device
RU2011106966 2011-02-24

Publications (2)

Publication Number Publication Date
WO2012115541A2 WO2012115541A2 (en) 2012-08-30
WO2012115541A3 true WO2012115541A3 (en) 2012-12-27

Family

ID=46489455

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2012/000147 WO2012115541A2 (en) 2011-02-24 2012-02-24 Light-emitting semiconductor device

Country Status (2)

Country Link
RU (1) RU2494498C2 (en)
WO (1) WO2012115541A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2530487C1 (en) * 2013-06-04 2014-10-10 Федеральное государственное бюджетное учреждение науки "Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук" Method of producing nitride light-emitting diode
RU2690036C1 (en) * 2018-07-25 2019-05-30 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Method for production of nitride light-emitting diode
RU2721166C1 (en) * 2019-10-14 2020-05-18 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Method for production of nitride light-emitting diode
CN114914337A (en) * 2021-02-10 2022-08-16 深圳第三代半导体研究院 Light emitting device and method of manufacturing the same
WO2022217539A1 (en) * 2021-04-15 2022-10-20 苏州晶湛半导体有限公司 Semiconductor structure and manufacturing method therefor

Citations (4)

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WO2010011201A1 (en) * 2008-07-21 2010-01-28 Pan Shaoher X Light emitting device
US20100155704A1 (en) * 2008-12-23 2010-06-24 Jeong Tak Oh Nitride semiconductor light emitting device and method of manufacturing the same
US20100207097A1 (en) * 2009-02-17 2010-08-19 Jeong Tak Oh Nitride semiconductor light emitting device and method of manufacturing the same
US20100308300A1 (en) * 2009-06-08 2010-12-09 Siphoton, Inc. Integrated circuit light emission device, module and fabrication process

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US5087949A (en) 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
CN1142598C (en) 1997-07-25 2004-03-17 日亚化学工业株式会社 Nitride semiconductor device
GB9912583D0 (en) 1999-05-28 1999-07-28 Arima Optoelectronics Corp A light emitting diode having a two well system with asymmetric tunneling
RU2200358C1 (en) * 2001-06-05 2003-03-10 Хан Владимир Александрович Semiconductor light-emitting diode
JP3909811B2 (en) * 2001-06-12 2007-04-25 パイオニア株式会社 Nitride semiconductor device and manufacturing method thereof
US7279718B2 (en) 2002-01-28 2007-10-09 Philips Lumileds Lighting Company, Llc LED including photonic crystal structure
DE10260937A1 (en) * 2002-12-20 2004-07-08 Technische Universität Braunschweig Radiation-emitting semiconductor body and method for its production
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7446345B2 (en) 2005-04-29 2008-11-04 Cree, Inc. Light emitting devices with active layers that extend into opened pits
JP2006339534A (en) * 2005-06-03 2006-12-14 Sony Corp Light emitting diode, manufacturing method therefor, light emitting diode back light, light emitting diode lighting device, light emitting diode display and electronic apparatus
KR100833309B1 (en) 2006-04-04 2008-05-28 삼성전기주식회사 Nitride semiconductor light emitting device
CN100585895C (en) * 2008-07-04 2010-01-27 西安电子科技大学 Production method of GaN multi-layer quantum point photoelectric material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010011201A1 (en) * 2008-07-21 2010-01-28 Pan Shaoher X Light emitting device
US20100155704A1 (en) * 2008-12-23 2010-06-24 Jeong Tak Oh Nitride semiconductor light emitting device and method of manufacturing the same
US20100207097A1 (en) * 2009-02-17 2010-08-19 Jeong Tak Oh Nitride semiconductor light emitting device and method of manufacturing the same
US20100308300A1 (en) * 2009-06-08 2010-12-09 Siphoton, Inc. Integrated circuit light emission device, module and fabrication process

Non-Patent Citations (1)

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Title
WUNDERER T ET AL: "Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces", JAPANESE JOURNAL OF APPLIED PHYSICS, THE JAPAN SOCIETY OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO; JP, vol. 48, no. 6, 5 June 2009 (2009-06-05), pages 060201-1 - 060201-3, XP001549634, ISSN: 0021-4922, DOI: 10.1143/JJAP.48.060201 *

Also Published As

Publication number Publication date
WO2012115541A2 (en) 2012-08-30
RU2011106966A (en) 2012-08-27
RU2494498C2 (en) 2013-09-27

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