JP2011040445A5 - - Google Patents
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- Publication number
- JP2011040445A5 JP2011040445A5 JP2009184003A JP2009184003A JP2011040445A5 JP 2011040445 A5 JP2011040445 A5 JP 2011040445A5 JP 2009184003 A JP2009184003 A JP 2009184003A JP 2009184003 A JP2009184003 A JP 2009184003A JP 2011040445 A5 JP2011040445 A5 JP 2011040445A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- receiving device
- conductivity type
- epitaxially growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 64
- 239000000758 substrate Substances 0.000 claims 7
- 229910052732 germanium Inorganic materials 0.000 claims 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 6
- 230000003321 amplification Effects 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009184003A JP5401203B2 (ja) | 2009-08-07 | 2009-08-07 | 半導体受光装置及びその製造方法 |
| US12/838,444 US8350301B2 (en) | 2009-08-07 | 2010-07-17 | Semiconductor photodiode device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009184003A JP5401203B2 (ja) | 2009-08-07 | 2009-08-07 | 半導体受光装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011040445A JP2011040445A (ja) | 2011-02-24 |
| JP2011040445A5 true JP2011040445A5 (enExample) | 2012-04-19 |
| JP5401203B2 JP5401203B2 (ja) | 2014-01-29 |
Family
ID=43534174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009184003A Expired - Fee Related JP5401203B2 (ja) | 2009-08-07 | 2009-08-07 | 半導体受光装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8350301B2 (enExample) |
| JP (1) | JP5401203B2 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2316848C1 (ru) * | 2006-06-01 | 2008-02-10 | Садыгов Зираддин Якуб-оглы | Микроканальный лавинный фотодиод |
| JP5414415B2 (ja) * | 2009-08-06 | 2014-02-12 | 株式会社日立製作所 | 半導体受光素子及びその製造方法 |
| JP2013168605A (ja) * | 2012-02-17 | 2013-08-29 | Sharp Corp | 太陽電池の製造方法 |
| WO2013133005A1 (ja) * | 2012-03-08 | 2013-09-12 | 三洋電機株式会社 | 半導体装置の製造方法 |
| US9397243B2 (en) * | 2013-07-23 | 2016-07-19 | Sifotonics Technologies Co., Ltd. | Ge—Si avalanche photodiode with silicon carrier-energy-relaxation layer and edge electric field buffer region |
| US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
| KR102284657B1 (ko) * | 2015-01-05 | 2021-08-02 | 삼성전자 주식회사 | 포토 다이오드 및 이를 포함하는 광통신 시스템 |
| JP5957102B2 (ja) * | 2015-01-21 | 2016-07-27 | シャープ株式会社 | 太陽電池の製造方法 |
| CN108352393B (zh) | 2015-07-23 | 2022-09-16 | 光程研创股份有限公司 | 高效宽光谱传感器 |
| US10707260B2 (en) | 2015-08-04 | 2020-07-07 | Artilux, Inc. | Circuit for operating a multi-gate VIS/IR photodiode |
| EP3370259B1 (en) | 2015-08-04 | 2020-03-11 | Artilux Inc. | Germanium-silicon light sensing apparatus |
| US10761599B2 (en) | 2015-08-04 | 2020-09-01 | Artilux, Inc. | Eye gesture tracking |
| US10861888B2 (en) | 2015-08-04 | 2020-12-08 | Artilux, Inc. | Silicon germanium imager with photodiode in trench |
| WO2017035447A1 (en) | 2015-08-27 | 2017-03-02 | Artilux Corporation | Wide spectrum optical sensor |
| US10418407B2 (en) | 2015-11-06 | 2019-09-17 | Artilux, Inc. | High-speed light sensing apparatus III |
| US10741598B2 (en) | 2015-11-06 | 2020-08-11 | Atrilux, Inc. | High-speed light sensing apparatus II |
| US10739443B2 (en) | 2015-11-06 | 2020-08-11 | Artilux, Inc. | High-speed light sensing apparatus II |
| US10254389B2 (en) | 2015-11-06 | 2019-04-09 | Artilux Corporation | High-speed light sensing apparatus |
| US10886309B2 (en) | 2015-11-06 | 2021-01-05 | Artilux, Inc. | High-speed light sensing apparatus II |
| US9659989B1 (en) * | 2016-04-19 | 2017-05-23 | Omnivision Technologies, Inc. | Image sensor with semiconductor trench isolation |
| WO2018102468A1 (en) | 2016-11-29 | 2018-06-07 | Sanger Jeremy | Hot water pressure washer |
| CN108110081B (zh) * | 2018-02-01 | 2023-12-08 | 北京一径科技有限公司 | 异质结雪崩光电二极管 |
| US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
| CN113540142B (zh) | 2018-02-23 | 2024-07-30 | 奥特逻科公司 | 光检测装置 |
| US11482553B2 (en) | 2018-02-23 | 2022-10-25 | Artilux, Inc. | Photo-detecting apparatus with subpixels |
| TWI780007B (zh) | 2018-04-08 | 2022-10-01 | 美商光程研創股份有限公司 | 光偵測裝置及其系統 |
| US10854770B2 (en) | 2018-05-07 | 2020-12-01 | Artilux, Inc. | Avalanche photo-transistor |
| US10969877B2 (en) | 2018-05-08 | 2021-04-06 | Artilux, Inc. | Display apparatus |
| US11574942B2 (en) | 2018-12-12 | 2023-02-07 | Artilux, Inc. | Semiconductor device with low dark noise |
| US12278252B2 (en) | 2019-08-28 | 2025-04-15 | Artilux, Inc. | Photo-detecting apparatus with low dark current |
| TWI836135B (zh) | 2019-08-28 | 2024-03-21 | 美商光程研創股份有限公司 | 具低暗電流之光偵測裝置 |
| US12477856B2 (en) | 2019-08-28 | 2025-11-18 | Artilux, Inc. | Photo-detecting apparatus with low dark current |
| US11749762B2 (en) * | 2019-10-31 | 2023-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device comprising a photodetector with reduced dark current |
| CN112750847B (zh) * | 2019-10-31 | 2024-10-18 | 台湾积体电路制造股份有限公司 | 半导体装置及其形成方法 |
| US11742451B2 (en) * | 2020-11-24 | 2023-08-29 | Cisco Technology, Inc. | Integrate stressor with Ge photodiode using a substrate removal process |
| WO2022169501A1 (en) | 2021-02-03 | 2022-08-11 | Chowdhury Asif Jahangir | Silicon nitride waveguide coupled photodiode |
| US12457823B2 (en) | 2022-08-19 | 2025-10-28 | Globalfoundries U.S. Inc. | Photodetector structure with air gap and related methods |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513924A (en) * | 1978-07-14 | 1980-01-31 | Semiconductor Res Found | Semiconductor photoelectronic conversion device |
| JPS57207383A (en) | 1981-06-15 | 1982-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Phototransistor |
| JPH077844B2 (ja) * | 1981-11-30 | 1995-01-30 | 財団法人半導体研究振興会 | 静電誘導型半導体光電変換装置 |
| JPS5895877A (ja) * | 1981-12-01 | 1983-06-07 | Semiconductor Res Found | 半導体光電変換装置 |
| JPS63122285A (ja) * | 1986-11-12 | 1988-05-26 | Tokuzo Sukegawa | 半導体受光素子用材料 |
| US5686734A (en) * | 1993-01-22 | 1997-11-11 | Canon Kabushiki Kaisha | Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device |
| JPH09181349A (ja) * | 1995-12-27 | 1997-07-11 | Mitsubishi Electric Corp | 半導体デバイスの製造方法 |
| EP0818829A1 (en) * | 1996-07-12 | 1998-01-14 | Hitachi, Ltd. | Bipolar transistor and method of fabricating it |
| JP2001077400A (ja) * | 1999-08-31 | 2001-03-23 | Tokai Rika Co Ltd | 半導体フォトデバイス |
| US7138697B2 (en) | 2004-02-24 | 2006-11-21 | International Business Machines Corporation | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
| US7638842B2 (en) * | 2005-09-07 | 2009-12-29 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures on insulators |
| JP2009033043A (ja) * | 2007-07-30 | 2009-02-12 | Panasonic Corp | 光半導体装置 |
| JP2009218457A (ja) * | 2008-03-12 | 2009-09-24 | Panasonic Corp | 光半導体装置 |
-
2009
- 2009-08-07 JP JP2009184003A patent/JP5401203B2/ja not_active Expired - Fee Related
-
2010
- 2010-07-17 US US12/838,444 patent/US8350301B2/en not_active Expired - Fee Related
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