JP2017073560A5 - - Google Patents

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Publication number
JP2017073560A5
JP2017073560A5 JP2016239334A JP2016239334A JP2017073560A5 JP 2017073560 A5 JP2017073560 A5 JP 2017073560A5 JP 2016239334 A JP2016239334 A JP 2016239334A JP 2016239334 A JP2016239334 A JP 2016239334A JP 2017073560 A5 JP2017073560 A5 JP 2017073560A5
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JP
Japan
Prior art keywords
silicon via
wafer substrate
conductive
wafer
active circuit
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JP2016239334A
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English (en)
Japanese (ja)
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JP6412091B2 (ja
JP2017073560A (ja
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Priority claimed from US12/716,902 external-priority patent/US10181454B2/en
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JP2016239334A 2010-03-03 2016-12-09 プロセス均一性及び熱消散を改善するダミーｔｓｖ（スルーシリコンビア） Active JP6412091B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/716,902 2010-03-03
US12/716,902 US10181454B2 (en) 2010-03-03 2010-03-03 Dummy TSV to improve process uniformity and heat dissipation

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2012556238A Division JP2013521661A (ja) 2010-03-03 2011-03-03 プロセス均一性及び熱消散を改善するダミーｔｓｖ（スルーシリコンビア）

Publications (3)

Publication Number Publication Date
JP2017073560A JP2017073560A (ja) 2017-04-13
JP2017073560A5 true JP2017073560A5 (enExample) 2017-09-28
JP6412091B2 JP6412091B2 (ja) 2018-10-24

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JP2012556238A Pending JP2013521661A (ja) 2010-03-03 2011-03-03 プロセス均一性及び熱消散を改善するダミーｔｓｖ（スルーシリコンビア）
JP2016239334A Active JP6412091B2 (ja) 2010-03-03 2016-12-09 プロセス均一性及び熱消散を改善するダミーｔｓｖ（スルーシリコンビア）

Family Applications Before (1)

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JP2012556238A Pending JP2013521661A (ja) 2010-03-03 2011-03-03 プロセス均一性及び熱消散を改善するダミーｔｓｖ（スルーシリコンビア）

Country Status (7)

Country Link
US (2) US10181454B2 (enExample)
EP (1) EP2543067B1 (enExample)
JP (2) JP2013521661A (enExample)
KR (1) KR101870931B1 (enExample)
CN (1) CN102782841B (enExample)
TW (1) TWI562277B (enExample)
WO (1) WO2011109595A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8563365B2 (en) * 2011-03-09 2013-10-22 Georgia Tech Research Corporation Air-gap C4 fluidic I/O interconnects and methods of fabricating same
US8618647B2 (en) * 2011-08-01 2013-12-31 Tessera, Inc. Packaged microelectronic elements having blind vias for heat dissipation
US9633149B2 (en) * 2012-03-14 2017-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for modeling through silicon via
US9147610B2 (en) 2012-06-22 2015-09-29 Infineon Technologies Ag Monitor structures and methods of formation thereof
US9343393B2 (en) 2012-08-15 2016-05-17 Industrial Technology Research Institute Semiconductor substrate assembly with embedded resistance element
TWI497661B (zh) 2012-08-15 2015-08-21 Ind Tech Res Inst 半導體基板
KR20140023707A (ko) * 2012-08-17 2014-02-27 에스케이하이닉스 주식회사 얼라인 키 구조물을 포함한 반도체 메모리 장치
CN103633039B (zh) * 2012-08-29 2017-02-08 中芯国际集成电路制造(上海)有限公司 半导体散热结构及其形成方法、半导体芯片
US9058460B2 (en) 2013-03-01 2015-06-16 International Business Machines Corporation Thermally-optimized metal fill for stacked chip systems
CN103236420B (zh) * 2013-04-28 2015-12-23 华进半导体封装先导技术研发中心有限公司 三维封装中散热通道与地线通道共用的封装结构
KR101428754B1 (ko) * 2013-05-14 2014-08-11 (주)실리콘화일 방열 특성이 개선된 반도체 장치
KR102144734B1 (ko) * 2013-10-25 2020-08-14 삼성전자 주식회사 반도체 장치 제조 방법
US9627341B2 (en) * 2013-10-28 2017-04-18 Infineon Technologies Dresden Gmbh Wafer arrangement, a method for testing a wafer, and a method for processing a wafer
KR20150094135A (ko) * 2014-02-10 2015-08-19 삼성전자주식회사 반도체 패키지 및 이의 제조방법
US9368479B2 (en) 2014-03-07 2016-06-14 Invensas Corporation Thermal vias disposed in a substrate proximate to a well thereof
US9178495B2 (en) 2014-03-21 2015-11-03 Globalfoundries U.S. 2 Llc Establishing a thermal profile across a semiconductor chip
KR20150118638A (ko) 2014-04-14 2015-10-23 에스케이하이닉스 주식회사 이미지 센서 및 그 제조 방법
US9831214B2 (en) * 2014-06-18 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device packages, packaging methods, and packaged semiconductor devices
US10177032B2 (en) * 2014-06-18 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Devices, packaging devices, and methods of packaging semiconductor devices
US9646918B2 (en) * 2014-08-14 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
KR102352677B1 (ko) 2014-08-27 2022-01-17 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN106033754B (zh) * 2015-03-11 2019-04-12 联华电子股份有限公司 具有纳米孔隙的半导体元件及其制造方法
CN104966693B (zh) * 2015-06-03 2017-03-15 贵州大学 一种内嵌式复合散热结构的三维集成功率系统及制备方法
US9960150B2 (en) * 2016-06-13 2018-05-01 Micron Technology, Inc. Semiconductor device assembly with through-mold cooling channel formed in encapsulant
US10296698B2 (en) * 2016-12-14 2019-05-21 Globalfoundries Inc. Forming multi-sized through-silicon-via (TSV) structures
EP4016718A1 (en) 2017-02-10 2022-06-22 Sony Group Corporation Battery and connection apparatus
WO2018173764A1 (ja) 2017-03-21 2018-09-27 富士フイルム株式会社 積層デバイス、積層体および積層デバイスの製造方法
US10290676B2 (en) 2017-08-15 2019-05-14 Northrop Grumman Systems Corporation Superconducting device with thermally conductive heat sink
CN107731839B (zh) * 2017-08-23 2019-03-19 长江存储科技有限责任公司 一种3d nand闪存结构及其制作方法
US10461014B2 (en) 2017-08-31 2019-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Heat spreading device and method
US10229864B1 (en) * 2017-09-14 2019-03-12 Northrop Grumman Systems Corporation Cryogenic integrated circuit having a heat sink coupled to separate ground planes through differently sized thermal vias
US10629535B2 (en) * 2017-10-31 2020-04-21 Northrop Grumman Systems Corporation Thermally isolated ground planes with a superconducting electrical coupler
US10685905B2 (en) 2018-01-24 2020-06-16 Toyota Motor Engineering & Manufacturing North America, Inc. Multi-layer cooling structure including through-silicon vias through a plurality of directly-bonded substrates and methods of making the same
US10157817B1 (en) 2018-01-26 2018-12-18 Toyota Motor Engineering & Manufacturing North America, Inc. Chip-scale cooling device having through-silicon vias and flow directing features
US10510629B2 (en) * 2018-05-18 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit package and method of forming same
US10867962B2 (en) * 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging process and manufacturing method
US11205620B2 (en) 2018-09-18 2021-12-21 International Business Machines Corporation Method and apparatus for supplying power to VLSI silicon chips
JP7030666B2 (ja) 2018-09-20 2022-03-07 株式会社東芝 半導体装置
CN109300902B (zh) * 2018-09-28 2024-08-20 长江存储科技有限责任公司 3d存储器件
US11004763B2 (en) * 2018-12-20 2021-05-11 Northrop Grumman Systems Corporation Superconducting device with multiple thermal sinks
CN110299348A (zh) * 2019-07-02 2019-10-01 贵州大学 一种大功率同步整流器结构的三维集成方法
US11275111B2 (en) * 2019-09-20 2022-03-15 Micron Technology, Inc. Plurality of edge through-silicon vias and related systems, methods, and devices
CN113035801A (zh) * 2019-12-25 2021-06-25 台湾积体电路制造股份有限公司 存储器装置及其制造方法
US11522118B2 (en) 2020-01-09 2022-12-06 Northrop Grumman Systems Corporation Superconductor structure with normal metal connection to a resistor and method of making the same
CN113113367A (zh) * 2020-01-13 2021-07-13 华为技术有限公司 芯片、芯片的制造方法和电子设备
US11004833B1 (en) * 2020-02-17 2021-05-11 Xilinx, Inc. Multi-chip stacked devices
US11043469B1 (en) * 2020-02-19 2021-06-22 Nanya Technology Corporation Method of forming three dimensional semiconductor structure
KR102802189B1 (ko) 2020-05-04 2025-04-30 삼성전자주식회사 반도체 패키지
US11923150B2 (en) 2020-05-27 2024-03-05 Intel Corporation Decoupling capacitors based on dummy through-silicon-vias
CN112435559B (zh) * 2020-11-15 2022-07-15 北京航空航天大学 一种内嵌可拉伸电路的暖体假人制作方法及暖体假人
WO2022126017A2 (en) * 2020-12-11 2022-06-16 Qorvo Us, Inc. 3d packaging with silicon die as thermal sink for high- power low thermal conductivity dies
US11574891B2 (en) * 2021-01-26 2023-02-07 Nanya Technology Corporation Semiconductor device with heat dissipation unit and method for fabricating the same
US12402331B2 (en) 2021-02-09 2025-08-26 Intel Corporation Decoupling capacitors based on dummy through-silicon-via plates
WO2022181064A1 (ja) * 2021-02-25 2022-09-01 ソニーセミコンダクタソリューションズ株式会社 半導体装置、撮像装置、製造方法
US11984376B2 (en) * 2021-04-22 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device including a cooling structure
CN114093810A (zh) * 2021-10-19 2022-02-25 芯盟科技有限公司 芯片及其设计方法
US20230260896A1 (en) * 2022-02-17 2023-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit package and method
US12456630B2 (en) * 2022-07-05 2025-10-28 Nanya Technology Corporation Method of manufacturing semiconductor structure having heat dissipation structure
US12315774B2 (en) * 2022-07-05 2025-05-27 Nanya Technology Corporation Semiconductor structure having heat dissipation structure
TWI880636B (zh) * 2024-02-17 2025-04-11 力晶積成電子製造股份有限公司 具有矽穿孔的散熱結構及其製作方法
US20250364349A1 (en) * 2024-05-23 2025-11-27 Applied Materials, Inc. Dummy features for dissipating heat in packages including advanced semiconductor chips
TWI880774B (zh) * 2024-06-07 2025-04-11 華邦電子股份有限公司 半導體裝置及其檢測方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295455A (ja) 1988-05-24 1989-11-29 Matsushita Electric Ind Co Ltd 半導体積層集積回路素子
JP3309907B2 (ja) 1999-04-20 2002-07-29 日本電気株式会社 半導体装置及びその製造方法
US20020163072A1 (en) * 2001-05-01 2002-11-07 Subhash Gupta Method for bonding wafers to produce stacked integrated circuits
JP3817453B2 (ja) * 2001-09-25 2006-09-06 新光電気工業株式会社 半導体装置
JP4869546B2 (ja) * 2003-05-23 2012-02-08 ルネサスエレクトロニクス株式会社 半導体装置
JP4342866B2 (ja) 2003-08-08 2009-10-14 竹本油脂株式会社 積層フィルム
JP4556454B2 (ja) 2004-03-15 2010-10-06 パナソニック電工株式会社 半導体装置の製造方法
US7202419B2 (en) 2004-07-20 2007-04-10 Dragonwave Inc. Multi-layer integrated RF/IF circuit board including a central non-conductive layer
JP4688526B2 (ja) 2005-03-03 2011-05-25 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
US20060220227A1 (en) 2005-04-04 2006-10-05 Data Device Corporation High density integrated circuit having multiple chips and employing a ball grid array (BGA) and method for making same
US7432592B2 (en) 2005-10-13 2008-10-07 Intel Corporation Integrated micro-channels for 3D through silicon architectures
KR100874910B1 (ko) * 2006-10-30 2008-12-19 삼성전자주식회사 수직형 열방출 통로를 갖는 적층형 반도체 패키지 및 그제조방법
JP4750724B2 (ja) 2007-01-25 2011-08-17 東京応化工業株式会社 重ね合わせユニット及び貼り合わせ装置
JPWO2008108334A1 (ja) 2007-03-06 2010-06-17 株式会社ニコン 半導体装置及び該半導体装置の製造方法
US7598523B2 (en) 2007-03-19 2009-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Test structures for stacking dies having through-silicon vias
KR101348748B1 (ko) * 2007-08-24 2014-01-08 삼성전자주식회사 재배선 기판을 이용한 반도체 패키지 제조방법
US7592697B2 (en) 2007-08-27 2009-09-22 Intel Corporation Microelectronic package and method of cooling same
US7738249B2 (en) 2007-10-25 2010-06-15 Endicott Interconnect Technologies, Inc. Circuitized substrate with internal cooling structure and electrical assembly utilizing same
US20090160531A1 (en) 2007-12-20 2009-06-25 Ati Technologies Ulc Multi-threshold voltage-biased circuits
KR101420817B1 (ko) 2008-01-15 2014-07-21 삼성전자주식회사 3 차원의 직렬 및 병렬 회로들을 가지고 차례로 적층된집적회로 모듈들을 전기적으로 접속하는 반도체 집적회로장치 및 그 장치의 형성방법
JP2009246258A (ja) 2008-03-31 2009-10-22 Nikon Corp 半導体装置および製造方法
JP2010021451A (ja) 2008-07-14 2010-01-28 Panasonic Corp 固体撮像装置およびその製造方法
US7893529B2 (en) * 2009-01-12 2011-02-22 International Business Machines Corporation Thermoelectric 3D cooling
US8314483B2 (en) * 2009-01-26 2012-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. On-chip heat spreader
US8526186B2 (en) * 2011-07-11 2013-09-03 Texas Instruments Incorporated Electronic assembly including die on substrate with heat spreader having an open window on the die
US9472483B2 (en) * 2014-12-17 2016-10-18 International Business Machines Corporation Integrated circuit cooling apparatus
WO2020000005A1 (de) 2018-06-26 2020-01-02 Pankowski Irina Teleskopartig zusammenschiebbares trinkgefäss sowie hand- und transportschutz für das trinkgefäss

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