JP2009123761A5 - - Google Patents

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Publication number
JP2009123761A5
JP2009123761A5 JP2007293350A JP2007293350A JP2009123761A5 JP 2009123761 A5 JP2009123761 A5 JP 2009123761A5 JP 2007293350 A JP2007293350 A JP 2007293350A JP 2007293350 A JP2007293350 A JP 2007293350A JP 2009123761 A5 JP2009123761 A5 JP 2009123761A5
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JP
Japan
Prior art keywords
substrate
electrode
hole
insulating film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007293350A
Other languages
English (en)
Japanese (ja)
Other versions
JP5111063B2 (ja
JP2009123761A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007293350A priority Critical patent/JP5111063B2/ja
Priority claimed from JP2007293350A external-priority patent/JP5111063B2/ja
Priority to PCT/JP2008/069768 priority patent/WO2009063754A1/ja
Priority to EP08849482A priority patent/EP2214214A1/en
Priority to US12/742,319 priority patent/US8338903B2/en
Publication of JP2009123761A publication Critical patent/JP2009123761A/ja
Publication of JP2009123761A5 publication Critical patent/JP2009123761A5/ja
Application granted granted Critical
Publication of JP5111063B2 publication Critical patent/JP5111063B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007293350A 2007-11-12 2007-11-12 光電変換素子及びその製造方法 Expired - Fee Related JP5111063B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007293350A JP5111063B2 (ja) 2007-11-12 2007-11-12 光電変換素子及びその製造方法
PCT/JP2008/069768 WO2009063754A1 (ja) 2007-11-12 2008-10-30 光電変換素子及びその製造方法
EP08849482A EP2214214A1 (en) 2007-11-12 2008-10-30 Photoelectric conversion element and method for manufacturing the same
US12/742,319 US8338903B2 (en) 2007-11-12 2008-10-30 Photoelectric transducer and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007293350A JP5111063B2 (ja) 2007-11-12 2007-11-12 光電変換素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2009123761A JP2009123761A (ja) 2009-06-04
JP2009123761A5 true JP2009123761A5 (enExample) 2010-04-02
JP5111063B2 JP5111063B2 (ja) 2012-12-26

Family

ID=40638606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007293350A Expired - Fee Related JP5111063B2 (ja) 2007-11-12 2007-11-12 光電変換素子及びその製造方法

Country Status (4)

Country Link
US (1) US8338903B2 (enExample)
EP (1) EP2214214A1 (enExample)
JP (1) JP5111063B2 (enExample)
WO (1) WO2009063754A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101072543B1 (ko) * 2009-04-28 2011-10-11 현대중공업 주식회사 태양 전지의 제조 방법
KR101544216B1 (ko) 2009-09-04 2015-08-12 엘지전자 주식회사 태양 전지 및 그 제조방법
KR101597831B1 (ko) 2009-10-08 2016-02-25 엘지전자 주식회사 태양 전지 및 태양 전지 모듈
NL2004310C2 (en) * 2010-02-26 2011-08-30 Stichting Energie Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method.
JP2011210802A (ja) * 2010-03-29 2011-10-20 Napura:Kk 太陽電池
JP5213188B2 (ja) * 2010-04-27 2013-06-19 シャープ株式会社 裏面電極型太陽電池、および裏面電極型太陽電池の製造方法
KR101125435B1 (ko) 2010-05-07 2012-03-27 현대중공업 주식회사 Ｍｗｔ형 태양전지
KR101164918B1 (ko) 2010-05-27 2012-07-19 대덕지디에스 주식회사 태양전지모듈 및 그 제조방법
DE102010026960A1 (de) * 2010-07-12 2012-01-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle und Verfahren zur Herstellung einer photovoltaischen Solarzelle
CN102386254A (zh) * 2010-09-06 2012-03-21 无锡尚德太阳能电力有限公司 金属绕穿型背接触太阳电池、制备方法及其组件
TWI397190B (zh) * 2010-09-30 2013-05-21 Ind Tech Res Inst 金屬貫穿式太陽電池的製造方法
IT1403828B1 (it) * 2010-12-02 2013-10-31 Applied Materials Italia Srl Procedimento per la stampa di un substrato
US20130074916A1 (en) * 2011-03-24 2013-03-28 E. I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
US20130074917A1 (en) * 2011-03-24 2013-03-28 E. I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
KR101563412B1 (ko) * 2011-04-04 2015-10-26 미쓰비시덴키 가부시키가이샤 태양전지 및 그 제조 방법, 태양전지 모듈
CN102760777A (zh) * 2011-04-29 2012-10-31 无锡尚德太阳能电力有限公司 太阳电池、太阳电池组件及其制备方法
CN102403404A (zh) * 2011-11-22 2012-04-04 苏州阿特斯阳光电力科技有限公司 一种背接触式光伏电池的制备方法
CN102683496B (zh) * 2012-05-27 2014-10-15 苏州阿特斯阳光电力科技有限公司 一种n型双面背接触太阳能电池的制备方法
CN102683494A (zh) * 2012-05-27 2012-09-19 苏州阿特斯阳光电力科技有限公司 双面背接触太阳能电池的制备方法
CN102709389B (zh) * 2012-05-27 2015-04-22 苏州阿特斯阳光电力科技有限公司 一种双面背接触太阳能电池的制备方法
US9331631B2 (en) * 2012-08-31 2016-05-03 First Solar, Inc. Direct connection of lead bar to conductive ribbon in a thin film photovoltaic device
CN103367550B (zh) * 2013-07-24 2016-07-06 苏州阿特斯阳光电力科技有限公司 一种背接触太阳电池及其制备方法
KR101680037B1 (ko) 2015-07-28 2016-12-12 엘지전자 주식회사 태양 전지 및 이를 포함하는 태양 전지 패널
KR102403698B1 (ko) * 2016-06-22 2022-05-30 현대에너지솔루션(주) 태양전지 및 그 제조방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110122A (en) * 1976-05-26 1978-08-29 Massachusetts Institute Of Technology High-intensity, solid-state-solar cell device
JPH0251282A (ja) * 1988-08-12 1990-02-21 Sharp Corp 光電変換装置
JP2824882B2 (ja) * 1992-07-15 1998-11-18 株式会社 オプトテクノ 太陽電池装置
EP0881694A1 (en) * 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solar cell and process of manufacturing the same
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication

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