WO2009063754A1 - 光電変換素子及びその製造方法 - Google Patents

光電変換素子及びその製造方法 Download PDF

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Publication number
WO2009063754A1
WO2009063754A1 PCT/JP2008/069768 JP2008069768W WO2009063754A1 WO 2009063754 A1 WO2009063754 A1 WO 2009063754A1 JP 2008069768 W JP2008069768 W JP 2008069768W WO 2009063754 A1 WO2009063754 A1 WO 2009063754A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion element
electrode
rear surface
separating section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/069768
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Tsutomu Yamazaki
Satoshi Okamoto
Jumpei Imoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to EP08849482A priority Critical patent/EP2214214A1/en
Priority to US12/742,319 priority patent/US8338903B2/en
Publication of WO2009063754A1 publication Critical patent/WO2009063754A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215Geometries of grid contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
PCT/JP2008/069768 2007-11-12 2008-10-30 光電変換素子及びその製造方法 Ceased WO2009063754A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08849482A EP2214214A1 (en) 2007-11-12 2008-10-30 Photoelectric conversion element and method for manufacturing the same
US12/742,319 US8338903B2 (en) 2007-11-12 2008-10-30 Photoelectric transducer and manufacturing method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-293350 2007-11-12
JP2007293350A JP5111063B2 (ja) 2007-11-12 2007-11-12 光電変換素子及びその製造方法

Publications (1)

Publication Number Publication Date
WO2009063754A1 true WO2009063754A1 (ja) 2009-05-22

Family

ID=40638606

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069768 Ceased WO2009063754A1 (ja) 2007-11-12 2008-10-30 光電変換素子及びその製造方法

Country Status (4)

Country Link
US (1) US8338903B2 (enExample)
EP (1) EP2214214A1 (enExample)
JP (1) JP5111063B2 (enExample)
WO (1) WO2009063754A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2004310C2 (en) * 2010-02-26 2011-08-30 Stichting Energie Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method.
KR101125435B1 (ko) 2010-05-07 2012-03-27 현대중공업 주식회사 Mwt형 태양전지
CN102403404A (zh) * 2011-11-22 2012-04-04 苏州阿特斯阳光电力科技有限公司 一种背接触式光伏电池的制备方法
WO2012007143A3 (de) * 2010-07-12 2012-09-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische solarzelle und verfahren zur herstellung einer photovoltaischen solarzelle
WO2012137291A1 (ja) * 2011-04-04 2012-10-11 三菱電機株式会社 太陽電池およびその製造方法、太陽電池モジュール

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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KR101072543B1 (ko) * 2009-04-28 2011-10-11 현대중공업 주식회사 태양 전지의 제조 방법
KR101544216B1 (ko) 2009-09-04 2015-08-12 엘지전자 주식회사 태양 전지 및 그 제조방법
KR101597831B1 (ko) * 2009-10-08 2016-02-25 엘지전자 주식회사 태양 전지 및 태양 전지 모듈
JP2011210802A (ja) 2010-03-29 2011-10-20 Napura:Kk 太陽電池
JP5213188B2 (ja) * 2010-04-27 2013-06-19 シャープ株式会社 裏面電極型太陽電池、および裏面電極型太陽電池の製造方法
KR101164918B1 (ko) 2010-05-27 2012-07-19 대덕지디에스 주식회사 태양전지모듈 및 그 제조방법
CN102386254A (zh) * 2010-09-06 2012-03-21 无锡尚德太阳能电力有限公司 金属绕穿型背接触太阳电池、制备方法及其组件
TWI397190B (zh) * 2010-09-30 2013-05-21 Ind Tech Res Inst 金屬貫穿式太陽電池的製造方法
IT1403828B1 (it) * 2010-12-02 2013-10-31 Applied Materials Italia Srl Procedimento per la stampa di un substrato
US20130074916A1 (en) * 2011-03-24 2013-03-28 E. I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
US20130074917A1 (en) * 2011-03-24 2013-03-28 E. I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
CN102760777A (zh) * 2011-04-29 2012-10-31 无锡尚德太阳能电力有限公司 太阳电池、太阳电池组件及其制备方法
CN102683496B (zh) * 2012-05-27 2014-10-15 苏州阿特斯阳光电力科技有限公司 一种n型双面背接触太阳能电池的制备方法
CN102709389B (zh) * 2012-05-27 2015-04-22 苏州阿特斯阳光电力科技有限公司 一种双面背接触太阳能电池的制备方法
CN102683494A (zh) * 2012-05-27 2012-09-19 苏州阿特斯阳光电力科技有限公司 双面背接触太阳能电池的制备方法
US9331631B2 (en) * 2012-08-31 2016-05-03 First Solar, Inc. Direct connection of lead bar to conductive ribbon in a thin film photovoltaic device
CN103367550B (zh) * 2013-07-24 2016-07-06 苏州阿特斯阳光电力科技有限公司 一种背接触太阳电池及其制备方法
KR101680037B1 (ko) 2015-07-28 2016-12-12 엘지전자 주식회사 태양 전지 및 이를 포함하는 태양 전지 패널
KR102403698B1 (ko) * 2016-06-22 2022-05-30 현대에너지솔루션(주) 태양전지 및 그 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002500825A (ja) * 1997-05-30 2002-01-08 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 太陽電池及びその製造方法
WO2006029250A2 (en) * 2004-09-07 2006-03-16 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
JP2007521668A (ja) * 2004-02-05 2007-08-02 アドベント ソーラー,インク. バックコンタクト型太陽電池とその製造法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110122A (en) * 1976-05-26 1978-08-29 Massachusetts Institute Of Technology High-intensity, solid-state-solar cell device
JPH0251282A (ja) * 1988-08-12 1990-02-21 Sharp Corp 光電変換装置
JP2824882B2 (ja) * 1992-07-15 1998-11-18 株式会社 オプトテクノ 太陽電池装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002500825A (ja) * 1997-05-30 2002-01-08 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 太陽電池及びその製造方法
JP2007521668A (ja) * 2004-02-05 2007-08-02 アドベント ソーラー,インク. バックコンタクト型太陽電池とその製造法
WO2006029250A2 (en) * 2004-09-07 2006-03-16 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102859709A (zh) * 2010-02-26 2013-01-02 荷兰能源建设基金中心 背面接触光伏电池的制造方法以及由该方法制造的背面接触光伏电池
WO2011105907A1 (en) 2010-02-26 2011-09-01 Stichting Energieonderzoek Centrum Nederland Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method
TWI549313B (zh) * 2010-02-26 2016-09-11 荷蘭史迪克汀艾能吉翁德卓克中心 背接觸光伏特電池的製造方法及藉此製造的背接觸光伏特電池
CN102859709B (zh) * 2010-02-26 2016-03-23 荷兰能源建设基金中心 背面接触光伏电池的制造方法以及由该方法制造的背面接触光伏电池
NL2004310C2 (en) * 2010-02-26 2011-08-30 Stichting Energie Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method.
KR101125435B1 (ko) 2010-05-07 2012-03-27 현대중공업 주식회사 Mwt형 태양전지
US9087940B2 (en) 2010-07-12 2015-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaic solar cell and method for producing a photovoltaic solar cell
CN103003951A (zh) * 2010-07-12 2013-03-27 弗劳恩霍弗实用研究促进协会 光伏太阳能电池和制造光伏太阳能电池的方法
WO2012007143A3 (de) * 2010-07-12 2012-09-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische solarzelle und verfahren zur herstellung einer photovoltaischen solarzelle
JP5596852B2 (ja) * 2011-04-04 2014-09-24 三菱電機株式会社 太陽電池およびその製造方法、太陽電池モジュール
WO2012137291A1 (ja) * 2011-04-04 2012-10-11 三菱電機株式会社 太陽電池およびその製造方法、太陽電池モジュール
US9490375B2 (en) 2011-04-04 2016-11-08 Mitsubishi Electric Corporation Solar cell and method for manufacturing the same, and solar cell module
CN102403404A (zh) * 2011-11-22 2012-04-04 苏州阿特斯阳光电力科技有限公司 一种背接触式光伏电池的制备方法

Also Published As

Publication number Publication date
JP2009123761A (ja) 2009-06-04
JP5111063B2 (ja) 2012-12-26
US20100252903A1 (en) 2010-10-07
EP2214214A1 (en) 2010-08-04
US8338903B2 (en) 2012-12-25

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