WO2009028287A1 - 光電変換素子、光電変換素子接続体および光電変換モジュール - Google Patents

光電変換素子、光電変換素子接続体および光電変換モジュール Download PDF

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Publication number
WO2009028287A1
WO2009028287A1 PCT/JP2008/063421 JP2008063421W WO2009028287A1 WO 2009028287 A1 WO2009028287 A1 WO 2009028287A1 JP 2008063421 W JP2008063421 W JP 2008063421W WO 2009028287 A1 WO2009028287 A1 WO 2009028287A1
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WIPO (PCT)
Prior art keywords
semiconductor layer
photoelectric conversion
conversion element
electrode
light receiving
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PCT/JP2008/063421
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English (en)
French (fr)
Inventor
Akiko Tsunemi
Original Assignee
Sharp Kabushiki Kaisha
Okamoto, Satoshi
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Publication date
Application filed by Sharp Kabushiki Kaisha, Okamoto, Satoshi filed Critical Sharp Kabushiki Kaisha
Priority to US12/674,967 priority Critical patent/US8093675B2/en
Priority to EP08791665.6A priority patent/EP2184785A4/en
Publication of WO2009028287A1 publication Critical patent/WO2009028287A1/ja
Priority to US13/313,483 priority patent/US8253213B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

　安価な配線部材を用いて隣接する光電変換素子間の接続が可能な光電変換素子を提供する。 　本発明の光電変換素子は、第１導電型の第１半導体層と、第１半導体層の裏面側に配置され且つ第１半導体層に電気的に接続された第１電極と、第１半導体層に接触し且つ少なくとも一部が第１半導体層の受光面側に配置された第２導電型の第２半導体層と、第２半導体層の受光面側に第２半導体層に電気的に接続されるように設けられた受光面電極と、第１半導体層の裏面側に配置され第１半導体層と電気的に分離され且つ第２半導体層に電気的に接続された第２電極と、第１半導体層を貫通し第１半導体層と電気的に分離され且つ前記受光面電極と第２電極とを電気的に接続する貫通接続部とを備える光電変換素子であって、第１電極と第２電極は、前記光電変換素子の中心を通る中心軸から等距離の位置に配置されることを特徴とする。
PCT/JP2008/063421 2007-08-31 2008-07-25 光電変換素子、光電変換素子接続体および光電変換モジュール WO2009028287A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/674,967 US8093675B2 (en) 2007-08-31 2008-07-25 Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module
EP08791665.6A EP2184785A4 (en) 2007-08-31 2008-07-25 PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT CONNECTION BODY, AND PHOTOELECTRIC CONVERSION MODULE
US13/313,483 US8253213B2 (en) 2007-08-31 2011-12-07 Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007226328A JP5285880B2 (ja) 2007-08-31 2007-08-31 光電変換素子、光電変換素子接続体および光電変換モジュール
JP2007-226328 2007-08-31

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/674,967 A-371-Of-International US8093675B2 (en) 2007-08-31 2008-07-25 Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module
US13/313,483 Division US8253213B2 (en) 2007-08-31 2011-12-07 Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module

Publications (1)

Publication Number Publication Date
WO2009028287A1 true WO2009028287A1 (ja) 2009-03-05

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Country Status (4)

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US (2) US8093675B2 (ja)
EP (1) EP2184785A4 (ja)
JP (1) JP5285880B2 (ja)
WO (1) WO2009028287A1 (ja)

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CN102498579A (zh) * 2009-09-14 2012-06-13 荷兰能源研究中心基金会 太阳能电池及多个太阳能电池的组件
US20120270356A1 (en) * 2009-04-28 2012-10-25 Hyundai Heavy Industries Co., Ltd. Method for manufacturing a solar cell
CN102770968A (zh) * 2009-12-28 2012-11-07 现代重工业株式会社 背面接触太阳能电池的制造方法
US20120279563A1 (en) * 2011-05-02 2012-11-08 Daniel Meier Solderable interconnect apparatus for interconnecting solar cells
US8866002B1 (en) * 2009-11-25 2014-10-21 Amkor Technology, Inc. Through wafer via structures for concentrated photovoltaic cells

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Publication number Priority date Publication date Assignee Title
JP2010050350A (ja) * 2008-08-22 2010-03-04 Sanyo Electric Co Ltd 太陽電池モジュール及び太陽電池
US20120270356A1 (en) * 2009-04-28 2012-10-25 Hyundai Heavy Industries Co., Ltd. Method for manufacturing a solar cell
WO2010131816A1 (en) 2009-05-14 2010-11-18 Lg Electronics Inc. Solar cell
EP2371008A4 (en) * 2009-05-14 2016-08-03 Lg Electronics Inc SOLAR CELL
CN102498579A (zh) * 2009-09-14 2012-06-13 荷兰能源研究中心基金会 太阳能电池及多个太阳能电池的组件
US8866002B1 (en) * 2009-11-25 2014-10-21 Amkor Technology, Inc. Through wafer via structures for concentrated photovoltaic cells
CN102770968A (zh) * 2009-12-28 2012-11-07 现代重工业株式会社 背面接触太阳能电池的制造方法
WO2011080340A3 (de) * 2010-01-04 2011-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Kontaktierte solarzelle sowie verfahren zu deren herstellung
US20120279563A1 (en) * 2011-05-02 2012-11-08 Daniel Meier Solderable interconnect apparatus for interconnecting solar cells

Also Published As

Publication number Publication date
EP2184785A4 (en) 2016-04-27
US20110057283A1 (en) 2011-03-10
US8253213B2 (en) 2012-08-28
EP2184785A1 (en) 2010-05-12
US8093675B2 (en) 2012-01-10
JP2009059921A (ja) 2009-03-19
JP5285880B2 (ja) 2013-09-11
US20120133015A1 (en) 2012-05-31

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