JP5111063B2 - 光電変換素子及びその製造方法 - Google Patents

光電変換素子及びその製造方法 Download PDF

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Publication number
JP5111063B2
JP5111063B2 JP2007293350A JP2007293350A JP5111063B2 JP 5111063 B2 JP5111063 B2 JP 5111063B2 JP 2007293350 A JP2007293350 A JP 2007293350A JP 2007293350 A JP2007293350 A JP 2007293350A JP 5111063 B2 JP5111063 B2 JP 5111063B2
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JP
Japan
Prior art keywords
substrate
electrode
hole
insulating film
conductive layer
Prior art date
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Expired - Fee Related
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JP2007293350A
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English (en)
Japanese (ja)
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JP2009123761A (ja
JP2009123761A5 (enExample
Inventor
努 山崎
諭 岡本
純平 井本
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Sharp Corp
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Sharp Corp
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Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2007293350A priority Critical patent/JP5111063B2/ja
Priority to PCT/JP2008/069768 priority patent/WO2009063754A1/ja
Priority to EP08849482A priority patent/EP2214214A1/en
Priority to US12/742,319 priority patent/US8338903B2/en
Publication of JP2009123761A publication Critical patent/JP2009123761A/ja
Publication of JP2009123761A5 publication Critical patent/JP2009123761A5/ja
Application granted granted Critical
Publication of JP5111063B2 publication Critical patent/JP5111063B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
JP2007293350A 2007-11-12 2007-11-12 光電変換素子及びその製造方法 Expired - Fee Related JP5111063B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007293350A JP5111063B2 (ja) 2007-11-12 2007-11-12 光電変換素子及びその製造方法
PCT/JP2008/069768 WO2009063754A1 (ja) 2007-11-12 2008-10-30 光電変換素子及びその製造方法
EP08849482A EP2214214A1 (en) 2007-11-12 2008-10-30 Photoelectric conversion element and method for manufacturing the same
US12/742,319 US8338903B2 (en) 2007-11-12 2008-10-30 Photoelectric transducer and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007293350A JP5111063B2 (ja) 2007-11-12 2007-11-12 光電変換素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2009123761A JP2009123761A (ja) 2009-06-04
JP2009123761A5 JP2009123761A5 (enExample) 2010-04-02
JP5111063B2 true JP5111063B2 (ja) 2012-12-26

Family

ID=40638606

Family Applications (1)

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JP2007293350A Expired - Fee Related JP5111063B2 (ja) 2007-11-12 2007-11-12 光電変換素子及びその製造方法

Country Status (4)

Country Link
US (1) US8338903B2 (enExample)
EP (1) EP2214214A1 (enExample)
JP (1) JP5111063B2 (enExample)
WO (1) WO2009063754A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180000156A (ko) * 2016-06-22 2018-01-02 현대중공업그린에너지 주식회사 태양전지 및 그 제조방법

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101072543B1 (ko) * 2009-04-28 2011-10-11 현대중공업 주식회사 태양 전지의 제조 방법
KR101544216B1 (ko) 2009-09-04 2015-08-12 엘지전자 주식회사 태양 전지 및 그 제조방법
KR101597831B1 (ko) 2009-10-08 2016-02-25 엘지전자 주식회사 태양 전지 및 태양 전지 모듈
NL2004310C2 (en) * 2010-02-26 2011-08-30 Stichting Energie Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method.
JP2011210802A (ja) * 2010-03-29 2011-10-20 Napura:Kk 太陽電池
JP5213188B2 (ja) * 2010-04-27 2013-06-19 シャープ株式会社 裏面電極型太陽電池、および裏面電極型太陽電池の製造方法
KR101125435B1 (ko) 2010-05-07 2012-03-27 현대중공업 주식회사 Ｍｗｔ형 태양전지
KR101164918B1 (ko) 2010-05-27 2012-07-19 대덕지디에스 주식회사 태양전지모듈 및 그 제조방법
DE102010026960A1 (de) * 2010-07-12 2012-01-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle und Verfahren zur Herstellung einer photovoltaischen Solarzelle
CN102386254A (zh) * 2010-09-06 2012-03-21 无锡尚德太阳能电力有限公司 金属绕穿型背接触太阳电池、制备方法及其组件
TWI397190B (zh) * 2010-09-30 2013-05-21 Ind Tech Res Inst 金屬貫穿式太陽電池的製造方法
IT1403828B1 (it) * 2010-12-02 2013-10-31 Applied Materials Italia Srl Procedimento per la stampa di un substrato
US20130074916A1 (en) * 2011-03-24 2013-03-28 E. I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
US20130074917A1 (en) * 2011-03-24 2013-03-28 E. I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
KR101563412B1 (ko) * 2011-04-04 2015-10-26 미쓰비시덴키 가부시키가이샤 태양전지 및 그 제조 방법, 태양전지 모듈
CN102760777A (zh) * 2011-04-29 2012-10-31 无锡尚德太阳能电力有限公司 太阳电池、太阳电池组件及其制备方法
CN102403404A (zh) * 2011-11-22 2012-04-04 苏州阿特斯阳光电力科技有限公司 一种背接触式光伏电池的制备方法
CN102683496B (zh) * 2012-05-27 2014-10-15 苏州阿特斯阳光电力科技有限公司 一种n型双面背接触太阳能电池的制备方法
CN102683494A (zh) * 2012-05-27 2012-09-19 苏州阿特斯阳光电力科技有限公司 双面背接触太阳能电池的制备方法
CN102709389B (zh) * 2012-05-27 2015-04-22 苏州阿特斯阳光电力科技有限公司 一种双面背接触太阳能电池的制备方法
US9331631B2 (en) * 2012-08-31 2016-05-03 First Solar, Inc. Direct connection of lead bar to conductive ribbon in a thin film photovoltaic device
CN103367550B (zh) * 2013-07-24 2016-07-06 苏州阿特斯阳光电力科技有限公司 一种背接触太阳电池及其制备方法
KR101680037B1 (ko) 2015-07-28 2016-12-12 엘지전자 주식회사 태양 전지 및 이를 포함하는 태양 전지 패널

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110122A (en) * 1976-05-26 1978-08-29 Massachusetts Institute Of Technology High-intensity, solid-state-solar cell device
JPH0251282A (ja) * 1988-08-12 1990-02-21 Sharp Corp 光電変換装置
JP2824882B2 (ja) * 1992-07-15 1998-11-18 株式会社 オプトテクノ 太陽電池装置
EP0881694A1 (en) * 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solar cell and process of manufacturing the same
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180000156A (ko) * 2016-06-22 2018-01-02 현대중공업그린에너지 주식회사 태양전지 및 그 제조방법
KR102403698B1 (ko) * 2016-06-22 2022-05-30 현대에너지솔루션(주) 태양전지 및 그 제조방법

Also Published As

Publication number Publication date
JP2009123761A (ja) 2009-06-04
WO2009063754A1 (ja) 2009-05-22
US20100252903A1 (en) 2010-10-07
EP2214214A1 (en) 2010-08-04
US8338903B2 (en) 2012-12-25

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