JP2002500825A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法Info
- Publication number
- JP2002500825A JP2002500825A JP50002799A JP50002799A JP2002500825A JP 2002500825 A JP2002500825 A JP 2002500825A JP 50002799 A JP50002799 A JP 50002799A JP 50002799 A JP50002799 A JP 50002799A JP 2002500825 A JP2002500825 A JP 2002500825A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- region
- front surface
- cell according
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 230000005855 radiation Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 73
- 239000002184 metal Substances 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 239000007858 starting material Substances 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims description 2
- 230000037361 pathway Effects 0.000 claims description 2
- 239000005360 phosphosilicate glass Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000001568 sexual effect Effects 0.000 claims description 2
- 239000005368 silicate glass Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 description 86
- 239000000969 carrier Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- CMWTZPSULFXXJA-VIFPVBQESA-N naproxen Chemical compound C1=C([C@H](C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-VIFPVBQESA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.半導体基板内に放射線を受取る前面と第2面とを少なくとも有する太陽電池 であって、 前記基板が第1型導電性の第1領域と前記第1型とは反対型の第2型導電性の 第2領域からなり、 前記第2領域が前記前面に隣接して配置されている第1部分と前記第2面と 隣接して配置されている第2部分とを少なくとも有し、 前記前面が、前記第2領域との導電性接点を有しており、 前記第2面が、前記第1領域と前記第2領域の第2部分とに分れた導電性接点 を有しており、 前記第2面上の前記第2領域との前記接点が、前記前面上の前記接点と有限数 のバイアを介して接続していることよりなる太陽電池。 2.前記第2面は、前記第1領域と前記第2領域とに分れている外部接点が作製 されている背面として特徴付けられていることよりなる請求項1に記載の太陽電 池。 3.前記基板の前記第1領域がp型導電性であるのに対して前記第2領域がn型 導電性であることよりなる請求項1又は2のいずれかに記載の太陽電池。 4.前記基板の前記第1領域がn型導電性であるのに対して前記第2領域がp型 導電性であることよりなる請求項1又は2のいずれかに記載の太陽電池。 5.前記バイアが前記前面から前記基板の前記第2面まで延在していることより なる請求項1から4までのいずれか一項に記載の太陽電池。 6.前記バイアが円錐形状又は円柱形状のいずれかであることよりなる請求項1 から5までのいずれか一項に記載の太陽電池。 7.前記前面上にある前記導電性接点が多数の狭い金属フィンガーからなると共 に、前記金属フィンガーである導電性経路の各部分が前記前面上の開口部を経由 して前記導電性経路の部分の少なくとも一つに向っていることよりなる請求項1 から6までのいずれか一項に記載の太陽電池。 8.前記前面上の前記導電性接点が多数の狭い金属フィンガーからなるととも に、前記金属フィンガーの総数が前記バイアの一つの列内のバイア数よりも多い ことよりなる請求項7に記載の太陽電池。 9.前記前面上の前記導電性接点が多数の並列に配置された金属フィンガーから なるとともに、前記金属フィンガーの総数が前記バイアの一つの列内のバイア数 とちょうど一致することよりなる請求項8に記載の太陽電池。 10.前記電池が約10cm×10cmよりも小さい面積を有するものであって 、前記バイアの数が電池当り100以下であることよりなる請求項1から9まで のいずれか一項に記載の太陽電池。 11.前記前面上に反射防止被覆層が積層されていることよりなる請求項1から 10までのいずれか一項に記載の太陽電池。 12.第1型導電性の第1領域と前記第1型とは反対型の第2型導電性の第2領 域とを有する半導体基板内に本質的に設けられた太陽電池であって、前記基板が 放射線を受取ることとなっている前面及び前記第1領域と前記第2領域との各接 点を設けることとなっている第2面とによって形成されるものである太陽電池の 少なくとも以下のステップからなる実現方法: 前記基板を貫いて多数のバイアを機械的に作製する; 前記バイアを化学的にエッチング処理する; 前記バイアの壁を含めた前記基板内にリン又はその他のドーパンドを導入して 前記第2領域を作製する; 前記太陽電池の前記第1領域及び前記第2領域のそれぞれに接点を設けるもの であり、前記接点が少なくとも前記前面上の前記第2領域との接点からなると共 に、外部接点を前記第2面上に設ける; 前記バイアをある程度金属化して、前記金属化によって前記前面上の前記第2 領域との前記接点と前記第2面上の前記外部接点の少なくとも一つとの間に導電 性の経路を形成する。 13.前記接点を形成するステップと前記バイアを金属化するステップとを実質 的に同時に行なうことよりなる請求項12に記載の太陽電池の実現方法。 14.請求項12又は13のいずれか一項に記載の太陽電池の実現方法であって 、 前記金属接点を焼成するステップと、 ベース接点を形成しようとする前記第2面上の箇所にマスク層を積層するステ ップと、 前記バイアの壁を含めた前記基板の前記マスク層によって被覆されていない面 内にドーパンドを拡散させて、前記第2領域を作製するステップと、 前記基板内への前記ドーパンドの導入ステップ後に前記電池の面上にある被覆 マスク層を除去するステップとをさらに含むことよりなる太陽電池の実現方法。 15.前記バイアが、前記第2面から前記前面まで達していない場合であって、 前記前面から十分な量の物質をエッチングして、前記前面に前記バイアの開口部 を作製することよりなる請求項12から14までのいずれか一項に記載の太陽電 池の実現方法。 16.前記リン拡散が、リン含有ペーストをスクリーン印刷して前記エミッタを 作製すると共に、前記ペーストを乾燥させ、次いで高温炉を使用して形成された リンケイ酸ガラスを前記基板の表面領域内に拡散させることよりなる請求項12 から15までのいずれか一項に記載の太陽電池の実現方法。 17.前記リン拡散が、出発物資としてガス状物質を用いて行なわれ、前記基板 の表面上にリンケイ酸ガラスを作製して表面領域内に拡散させることよりなる請 求項12から16までのいずれか一項に記載の太陽電池の実現方法。 18.前記リン拡散が、スピン−オン又はスプレー−オンデポジション法により 行なわれることよりなる請求項12から17までのいずれか一項に記載の太陽電 池の実現方法。 19.前記リン拡散が、イオン注入法により行なわれることよりなる請求項12 から18までのいずれか一項に記載の太陽電池の実現方法。 20.前記保護マスク層の除去が、前記基板を希薄フッ化水素HF中に浸し、そ の後、酸化剤により酸化させた前記マスク層を希釈させたフッ化水素中で除去す る二段階洗浄の組み合わせにより行なうことよりなる請求項12から19までの いずれか一項に記載の太陽電池の実現方法。 21.前記金属接点の積層をスクリーン印刷法により行なうことよりなる請求 項12から20までのいずれか一項に記載の太陽電池の実現方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97870081A EP0881694A1 (en) | 1997-05-30 | 1997-05-30 | Solar cell and process of manufacturing the same |
EP97870081.3 | 1997-05-30 | ||
PCT/BE1998/000077 WO1998054763A1 (en) | 1997-05-30 | 1998-05-29 | Solar cell and process of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002500825A true JP2002500825A (ja) | 2002-01-08 |
JP4073968B2 JP4073968B2 (ja) | 2008-04-09 |
Family
ID=8231005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50002799A Expired - Lifetime JP4073968B2 (ja) | 1997-05-30 | 1998-05-29 | 太陽電池及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6384317B1 (ja) |
EP (2) | EP0881694A1 (ja) |
JP (1) | JP4073968B2 (ja) |
AU (1) | AU751678B2 (ja) |
DE (1) | DE69837143T2 (ja) |
ES (1) | ES2283057T3 (ja) |
WO (1) | WO1998054763A1 (ja) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005260158A (ja) * | 2004-03-15 | 2005-09-22 | Sharp Corp | 太陽電池モジュール |
JP2008502149A (ja) * | 2004-06-04 | 2008-01-24 | サンパワー コーポレイション | 太陽電池モジュールにおける太陽電池の相互接続 |
WO2008078771A1 (ja) | 2006-12-26 | 2008-07-03 | Kyocera Corporation | 太陽電池素子及び太陽電池素子の製造方法 |
WO2008078741A1 (ja) | 2006-12-26 | 2008-07-03 | Kyocera Corporation | 太陽電池モジュール |
JP2008270743A (ja) * | 2007-03-29 | 2008-11-06 | Kyocera Corp | 太陽電池モジュール |
JP2008282926A (ja) * | 2007-05-09 | 2008-11-20 | Sanyo Electric Co Ltd | 太陽電池モジュール |
WO2009028287A1 (ja) * | 2007-08-31 | 2009-03-05 | Sharp Kabushiki Kaisha | 光電変換素子、光電変換素子接続体および光電変換モジュール |
JP2009076849A (ja) * | 2007-08-24 | 2009-04-09 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池モジュール |
JP2009088406A (ja) * | 2007-10-02 | 2009-04-23 | Sanyo Electric Co Ltd | 太陽電池及びその製造方法 |
WO2009063754A1 (ja) * | 2007-11-12 | 2009-05-22 | Sharp Kabushiki Kaisha | 光電変換素子及びその製造方法 |
JP2009182260A (ja) * | 2008-01-31 | 2009-08-13 | Sanyo Electric Co Ltd | 太陽電池 |
WO2009123149A1 (ja) | 2008-03-31 | 2009-10-08 | 京セラ株式会社 | 太陽電池素子及び太陽電池モジュール |
JP2011003936A (ja) * | 2010-09-30 | 2011-01-06 | Sanyo Electric Co Ltd | 光起電力モジュール及び光起電力素子 |
JP2011512669A (ja) * | 2008-08-01 | 2011-04-21 | エルジー エレクトロニクス インコーポレイティド | 太陽電池、太陽電池の製造方法及び太陽電池モジュール |
JP2011528174A (ja) * | 2008-07-17 | 2011-11-10 | フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー.ファオ. | 太陽電池および太陽電池製造方法 |
JP2012023412A (ja) * | 2011-11-04 | 2012-02-02 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP2013070088A (ja) * | 2012-12-17 | 2013-04-18 | Sharp Corp | 光電変換素子、光電変換素子接続体および光電変換モジュール |
JP2013070089A (ja) * | 2012-12-17 | 2013-04-18 | Sharp Corp | 光電変換素子、光電変換素子接続体および光電変換モジュール |
JP2013516081A (ja) * | 2009-12-28 | 2013-05-09 | ヒュンダイ ヘビー インダストリーズ カンパニー リミテッド | 裏面電極型の太陽電池の製造方法 |
JP2014033239A (ja) * | 2013-11-21 | 2014-02-20 | Sharp Corp | 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール |
KR101367405B1 (ko) | 2012-08-27 | 2014-02-27 | 한화케미칼 주식회사 | 에미터 스루 태양 전지 및 이의 제조 방법 |
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US9515200B2 (en) | 2006-01-24 | 2016-12-06 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaic module |
Families Citing this family (100)
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WO1999048136A2 (de) | 1998-03-13 | 1999-09-23 | Steffen Keller | Solarzellenanordnung |
US7323634B2 (en) * | 1998-10-14 | 2008-01-29 | Patterning Technologies Limited | Method of forming an electronic device |
JP3991622B2 (ja) * | 2001-05-30 | 2007-10-17 | カシオ計算機株式会社 | 液晶表示素子、その反射透過層の製造方法、および携帯型電子機器 |
DE10155346C1 (de) * | 2001-11-10 | 2003-06-12 | Fraunhofer Ges Forschung | Solarzelle sowie Verfahren zu deren Herstellung |
US7217883B2 (en) | 2001-11-26 | 2007-05-15 | Shell Solar Gmbh | Manufacturing a solar cell with backside contacts |
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JP2013070088A (ja) * | 2012-12-17 | 2013-04-18 | Sharp Corp | 光電変換素子、光電変換素子接続体および光電変換モジュール |
JP2014033239A (ja) * | 2013-11-21 | 2014-02-20 | Sharp Corp | 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール |
Also Published As
Publication number | Publication date |
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AU7632098A (en) | 1998-12-30 |
DE69837143T2 (de) | 2007-10-31 |
US6384317B1 (en) | 2002-05-07 |
ES2283057T3 (es) | 2007-10-16 |
DE69837143D1 (de) | 2007-04-05 |
EP0985233A1 (en) | 2000-03-15 |
AU751678B2 (en) | 2002-08-22 |
EP0881694A1 (en) | 1998-12-02 |
JP4073968B2 (ja) | 2008-04-09 |
EP0985233B1 (en) | 2007-02-21 |
WO1998054763A1 (en) | 1998-12-03 |
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