TWI405344B - 太陽能電池結構 - Google Patents

太陽能電池結構 Download PDF

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TWI405344B
TWI405344B TW099110249A TW99110249A TWI405344B TW I405344 B TWI405344 B TW I405344B TW 099110249 A TW099110249 A TW 099110249A TW 99110249 A TW99110249 A TW 99110249A TW I405344 B TWI405344 B TW I405344B
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solar cell
inclined surface
metal electrode
cell structure
crystal
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TW099110249A
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TW201135946A (en
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Ting Fang
Kang Cheng Lin
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Motech Ind Inc
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Priority to US13/028,466 priority patent/US20110240113A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Description

太陽能電池結構
本發明是有關於一種太陽能電池結構，特別是有關於具有傾斜表面之太陽能電池結構。
目前射極裹覆式背接式太陽能電池雖可避免正面金屬柵極遮光，增加太陽光之入射量，但因正面電流是經由佈滿穿透晶體之孔洞表面射極，集流至電池背面，因此需要大量孔洞作為集流通道。這些穿透晶體之孔洞一般是垂直於晶體表面，因此入射光射入孔洞位置時，會被孔洞底部之金屬幾乎完全反射，造成光學損失，使其光電流提升有限。

請參閱第1圖，其係為習知之太陽能電池結構之示意圖。如第1圖所示，習知之太陽能電池結構係包含：一個被孔洞貫穿之矽晶體10 及一金屬電極30。矽晶體之孔洞中互相面對的表面11、21是相互平行的，並垂直於矽晶體頂面，因此當入射光（如箭頭標示）射入孔洞位置時，會被孔洞底部之金屬電極30幾乎完全反射，造成光學損失，使其光電流提升有限。
有鑑於習知技術之問題，本發明之目的就是在提供一種太陽能電池結構，其特徵為具傾斜角度之晶體表面。

根據本發明之目的，提出一種太陽能電池結構，其包含：一被至少一傾斜孔洞貫穿之矽晶體，矽晶體於孔洞內具有至少一傾斜之表面。此太陽能電池結構更包含射極及一第一金屬電極。其中射極覆蓋矽晶體之頂面、傾斜表面、及底面之一部分。另外本發明更具有一抗反射層，其覆蓋矽晶體頂面、傾斜表面外之射極。第一金屬電極係位於矽晶體之孔洞底部，第一金屬電極並與射極電性連接。

其中，藉由傾斜表面之具傾斜角之設計，增加了入射光在太陽能電池中的光學路徑，因而提高太陽能電池的光電流。

承上所述，依本發明之太陽能電池結構，其可具有一或多個下述優點：
(1) 此太陽能電池結構，可使入射光產生多次反射，而增加入射光在太陽能電池中的光學路徑。
(2) 此太陽能電池結構，藉由矽晶體於傾斜孔洞中之傾斜表面，提高太陽能電池的光電流。
以下將參照相關圖式，說明依本發明之太陽能電池結構之實施例，為使便於理解，下述實施例中之相同元件係以相同之符號標示來說明。
請參閱第2圖及第3圖，其係分別為本發明之太陽能電池結構之第一實施例之剖面示意圖及本發明之太陽能電池結構之第一實施例之俯視示意圖。如第2圖所示，太陽能電池結構係包含：一矽晶體110被至少一傾斜孔洞200貫穿，矽晶體110於孔洞200內具有至少一傾斜表面，此傾斜表面具有之第一區域112及第二區域122。此太陽能電池結構更包含射極113及一第一金屬電極130。其中，射極113覆蓋矽晶體之頂面111、傾斜表面及底面117之一部分。另外本發明更具有一抗反射層114，其覆蓋矽晶體110頂面111及傾斜表面外之射極113。第一金屬電極130係位於矽晶體110之孔洞200底部，第一金屬電極130並與射極113電性連接。如第2圖及第3圖所示，對P型矽晶體而言，第一金屬電極130為負極，第二金屬電極160位於矽晶體110底部，其係正極。第一金屬電極130與第二金屬電極160之間更有一絕緣構造118，此絕緣構造118舉例可為絕緣溝槽、絕緣層、絕緣件或是僅將第二金屬電極160旁之部份射極113去除，以上為舉例性，而非為限制性者。在此特別說明，本實施例僅以一矽晶體110被一孔洞200貫穿舉例之，本發明之矽晶體110可更包含複數個貫穿孔洞200。
上述之傾斜表面之第一區域112為具傾斜角度之表面，所謂的傾斜角度係以矽晶體頂面111之法線116方向為基準，傾斜表面之第一區域112與法線116間具有一第一夾角115，其係大於負90度且小於90度。相同的，以矽晶體之頂面111之法線116方向為基準，傾斜表面之第二區域122與法線116間具有一第二夾角125，其係大於負90度且小於90度。第一夾角115與第二夾角125可相同亦可不同，在此僅為舉例，任何落入本發明所界定之傾斜角度之範圍，皆未脫離本發明之精神與範疇。其中以雷射加工的鑽孔方式製作該傾斜孔洞200，並使得傾斜表面之第一區域112與傾斜表面之第二區域122具有不同的傾斜角度。雷射加工的鑽孔孔洞大小，係介於10微米至200微米間。隨著不同之加工方式，所產生的角度亦或有不同。本實施例所使用之雷射方式加工，僅為舉例性，而非為限制性者。任何未脫離本發明之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。
請參閱第4圖，其係為本發明之太陽能電池結構之第一實施例之使用樣態之剖面示意圖。如第4圖所示，第一入射光140經過五次的反射，其中經過兩次傾斜表面之第一區域112外的抗反射層114、兩次傾斜表面之第二區域122外的抗反射層114及一次金屬電極130的反射；第二入射光150經過四次的反射，其中經過一次傾斜表面之第一區域112外的抗反射層114、一次傾斜表面之第二區域122外的抗反射層114及兩次金屬電極130的反射。因此藉由傾斜表面之第一區域112及傾斜表面之第二區域122之具傾斜角之設計，可使入射光產生多次反射，增加了入射光在太陽能電池中的光學路徑，因而提高太陽能電池的光電流。
上述之太陽能電池係N型或P型之多晶體或單晶體電池，在此實施例中，此太陽能電池結構為射極裹覆型背接式太陽能電池，其用以提高太陽能電池的光電流。
以上所述僅為舉例性，而非為限制性者。任何未脫離本發明之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。
10‧‧‧矽晶體
11、21‧‧‧矽晶體表面
30‧‧‧金屬電極
110‧‧‧矽晶體
111‧‧‧矽晶體頂面
112‧‧‧傾斜表面之第一區域
113‧‧‧射極
114‧‧‧抗反射層
115‧‧‧第一夾角
116‧‧‧法線
117‧‧‧矽晶體底面
118‧‧‧絕緣構造
122‧‧‧傾斜表面之第二區域
125‧‧‧第二夾角
130‧‧‧第一金屬電極
140‧‧‧第一入射光
150‧‧‧第二入射光
160‧‧‧第二金屬電極
200‧‧‧孔洞
第1圖係為習知之太陽能電池結構之剖面示意圖。
第2圖係為本發明之太陽能電池結構之第一實施例之剖面示意圖。
第3圖係為本發明之太陽能電池結構之第一實施例之俯視圖。
第4圖係為本發明之太陽能電池結構之第一實施例之使用樣態之剖面示意圖。
110‧‧‧矽晶體
111‧‧‧矽晶體頂面
112‧‧‧傾斜表面之第一區域
113‧‧‧射極
114‧‧‧抗反射層
115‧‧‧第一夾角
116‧‧‧法線
117‧‧‧矽晶體底面
118‧‧‧絕緣構造
122‧‧‧傾斜表面之第二區域
125‧‧‧第二夾角
130‧‧‧第一金屬電極
160‧‧‧第二金屬電極
200‧‧‧孔洞

Claims (5)

  1. 一種太陽能電池結構，包含：
    一具有至少一貫穿孔洞之矽晶體，該矽晶體於該孔洞內具有至少一傾斜表面，俾使光線於該孔洞內進行至少一次反射；
    一射極，覆蓋該矽晶體及該孔洞中之該傾斜表面；以及

    一第一金屬電極，電性連接該射極且位於該矽晶體之該孔洞底部，其中該光線係至少反射至該第一金屬電極。
  2. 如申請專利範圍第1項所述之太陽能電池結構，其中該傾斜表面與該矽晶體頂面之法線之夾角，係大於負90度且小於90度。
  3. 如申請專利範圍第1項所述之太陽能電池結構，其中該矽晶體係N型或P型之多晶體或單晶體。
  4. 如申請專利範圍第1項所述之太陽能電池結構，更包含一第二金屬電極於該矽晶體底部。
  5. 如申請專利範圍第4項所述之太陽能電池結構，其中該第一金屬電極及該第二金屬電極間更具有一絕緣構造。
TW099110249A 2010-04-01 2010-04-01 太陽能電池結構 TWI405344B (zh)

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US13/028,466 US20110240113A1 (en) 2010-04-01 2011-02-16 Solar cell structure

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384317B1 (en) * 1997-05-30 2002-05-07 Imec Vzw Solar cell and process of manufacturing the same
US20100258178A1 (en) * 2009-05-14 2010-10-14 Daehee Jang Solar cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
CN101562203B (zh) * 2008-04-18 2014-07-09 清华大学 太阳能电池
KR101573934B1 (ko) * 2009-03-02 2015-12-11 엘지전자 주식회사 태양 전지 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384317B1 (en) * 1997-05-30 2002-05-07 Imec Vzw Solar cell and process of manufacturing the same
US20100258178A1 (en) * 2009-05-14 2010-10-14 Daehee Jang Solar cell

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