JP2005260158A - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP2005260158A JP2005260158A JP2004072965A JP2004072965A JP2005260158A JP 2005260158 A JP2005260158 A JP 2005260158A JP 2004072965 A JP2004072965 A JP 2004072965A JP 2004072965 A JP2004072965 A JP 2004072965A JP 2005260158 A JP2005260158 A JP 2005260158A
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- 239000000758 substrate Substances 0.000 claims description 84
- 239000004020 conductor Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 52
- 229910052710 silicon Inorganic materials 0.000 description 52
- 239000010703 silicon Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 14
- 238000002161 passivation Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
【解決手段】 電気的に接続されている複数の太陽電池セル20、21、22を含む太陽電池モジュールであって、太陽電池セル20、21、22の裏面にp+層とn+層とが形成されており、p+層上に形成されているフィンガーp電極11に交差するバスバーp電極13とn+層上に形成されているフィンガーn電極12に交差するバスバーn電極14とからなるバスバー電極のうち少なくとも1本が太陽電池セル20、21、22の裏面の内部に形成されている太陽電池モジュールである。
【選択図】 図15
Description
Claims (5)
- 電気的に接続されている複数の太陽電池セルを含む太陽電池モジュールであって、前記太陽電池セルのうち少なくとも1つの裏面にp+層とn+層とが形成されており、前記p+層上に形成されているフィンガーp電極に交差するバスバーp電極と前記n+層上に形成されているフィンガーn電極に交差するバスバーn電極とからなるバスバー電極のうち少なくとも1本が前記裏面の内部に形成されていることを特徴とする、太陽電池モジュール。
- 電気的に接続されている複数の太陽電池セルを含む太陽電池モジュールであって、前記太陽電池セルのすべての裏面にp+層とn+層とが形成されており、前記p+層上に形成されているフィンガーp電極に交差するバスバーp電極と前記n+層上に形成されているフィンガーn電極に交差するバスバーn電極とからなるバスバー電極のうち少なくとも1本が前記太陽電池セルのそれぞれの裏面の内部に形成されていることを特徴とする、太陽電池モジュール。
- 複数の孔が形成されている絶縁体と前記絶縁体の孔上に形成されている導電体とを含むサブストレートが前記太陽電池セルの前記バスバー電極上に設置されており、前記バスバー電極と前記導電体とが前記孔を介して電気的に接続され、1つの太陽電池セルのバスバーp電極と他の太陽電池セルのバスバーn電極とが前記導電体により電気的に接続されていることを特徴とする、請求項1または2に記載の太陽電池モジュール。
- 前記導電体上に絶縁性基板が設置されていることを特徴とする、請求項3に記載の太陽電池モジュール。
- 前記太陽電池セルが一対の対向する基板間において透明樹脂により封止されていることを特徴とする、請求項1から4のいずれかに記載の太陽電池モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004072965A JP4467337B2 (ja) | 2004-03-15 | 2004-03-15 | 太陽電池モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004072965A JP4467337B2 (ja) | 2004-03-15 | 2004-03-15 | 太陽電池モジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009001896A Division JP2009071340A (ja) | 2009-01-07 | 2009-01-07 | 太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005260158A true JP2005260158A (ja) | 2005-09-22 |
JP4467337B2 JP4467337B2 (ja) | 2010-05-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004072965A Expired - Fee Related JP4467337B2 (ja) | 2004-03-15 | 2004-03-15 | 太陽電池モジュール |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103434A (ja) * | 2005-09-30 | 2007-04-19 | Sharp Corp | 太陽電池素子 |
WO2007099955A1 (ja) * | 2006-03-01 | 2007-09-07 | Sanyo Electric Co., Ltd. | 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール |
WO2008113741A3 (de) * | 2007-03-19 | 2009-01-15 | Q Cells Ag | Solarzellenvorrichtung, solarzellenmodul und verbindungsanordnung |
WO2010048677A1 (en) * | 2008-10-31 | 2010-05-06 | Chromasun Pty Ltd | Photovoltaic receiver |
JP2011528174A (ja) * | 2008-07-17 | 2011-11-10 | フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー.ファオ. | 太陽電池および太陽電池製造方法 |
JP2014127553A (ja) * | 2012-12-26 | 2014-07-07 | Sharp Corp | 太陽電池及び太陽電池の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03165578A (ja) * | 1989-11-24 | 1991-07-17 | Hitachi Ltd | 太陽電池 |
JPH10117004A (ja) * | 1996-10-09 | 1998-05-06 | Toyota Motor Corp | 集光型太陽電池素子 |
JPH10178192A (ja) * | 1996-12-17 | 1998-06-30 | Mitsubishi Electric Corp | 太陽電池セル特性評価装置、太陽電池セル特性評価方法および太陽電池モジュール |
JP2001332753A (ja) * | 2000-05-22 | 2001-11-30 | Boeing Co:The | 軽量の太陽電池モジュールおよびその製造方法 |
JP2002500825A (ja) * | 1997-05-30 | 2002-01-08 | アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ | 太陽電池及びその製造方法 |
JP2005260157A (ja) * | 2004-03-15 | 2005-09-22 | Sharp Corp | 太陽電池セルおよび太陽電池モジュール |
-
2004
- 2004-03-15 JP JP2004072965A patent/JP4467337B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03165578A (ja) * | 1989-11-24 | 1991-07-17 | Hitachi Ltd | 太陽電池 |
JPH10117004A (ja) * | 1996-10-09 | 1998-05-06 | Toyota Motor Corp | 集光型太陽電池素子 |
JPH10178192A (ja) * | 1996-12-17 | 1998-06-30 | Mitsubishi Electric Corp | 太陽電池セル特性評価装置、太陽電池セル特性評価方法および太陽電池モジュール |
JP2002500825A (ja) * | 1997-05-30 | 2002-01-08 | アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ | 太陽電池及びその製造方法 |
JP2001332753A (ja) * | 2000-05-22 | 2001-11-30 | Boeing Co:The | 軽量の太陽電池モジュールおよびその製造方法 |
JP2005260157A (ja) * | 2004-03-15 | 2005-09-22 | Sharp Corp | 太陽電池セルおよび太陽電池モジュール |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103434A (ja) * | 2005-09-30 | 2007-04-19 | Sharp Corp | 太陽電池素子 |
JP4679323B2 (ja) * | 2005-09-30 | 2011-04-27 | シャープ株式会社 | 太陽電池素子 |
WO2007099955A1 (ja) * | 2006-03-01 | 2007-09-07 | Sanyo Electric Co., Ltd. | 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール |
US8049099B2 (en) | 2006-03-01 | 2011-11-01 | Sanyo Electric Co., Ltd. | Solar cell and solar cell module including the same |
JP5142980B2 (ja) * | 2006-03-01 | 2013-02-13 | 三洋電機株式会社 | 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール |
KR101260094B1 (ko) | 2006-03-01 | 2013-05-02 | 산요덴키가부시키가이샤 | 태양 전지 셀, 및, 이 태양 전지 셀을 이용한 태양 전지 모듈 |
WO2008113741A3 (de) * | 2007-03-19 | 2009-01-15 | Q Cells Ag | Solarzellenvorrichtung, solarzellenmodul und verbindungsanordnung |
JP2011528174A (ja) * | 2008-07-17 | 2011-11-10 | フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー.ファオ. | 太陽電池および太陽電池製造方法 |
WO2010048677A1 (en) * | 2008-10-31 | 2010-05-06 | Chromasun Pty Ltd | Photovoltaic receiver |
CN102203957A (zh) * | 2008-10-31 | 2011-09-28 | 科罗马逊私人有限公司 | 光伏接收器 |
JP2014127553A (ja) * | 2012-12-26 | 2014-07-07 | Sharp Corp | 太陽電池及び太陽電池の製造方法 |
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