JP4322199B2 - 太陽電池セル、太陽電池セルユニットの製造方法および太陽電池モジュール - Google Patents
太陽電池セル、太陽電池セルユニットの製造方法および太陽電池モジュール Download PDFInfo
- Publication number
- JP4322199B2 JP4322199B2 JP2004308575A JP2004308575A JP4322199B2 JP 4322199 B2 JP4322199 B2 JP 4322199B2 JP 2004308575 A JP2004308575 A JP 2004308575A JP 2004308575 A JP2004308575 A JP 2004308575A JP 4322199 B2 JP4322199 B2 JP 4322199B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- bus bar
- finger
- portions
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title description 17
- 239000000758 substrate Substances 0.000 claims description 79
- 239000012535 impurity Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
- 229910052710 silicon Inorganic materials 0.000 description 51
- 239000010703 silicon Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 16
- 238000002161 passivation Methods 0.000 description 12
- 230000007547 defect Effects 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229960004592 isopropanol Drugs 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (6)
- 半導体基板と、
前記半導体基板の主表面上に形成された電極部とを備え、
前記電極部は、第1母線部と、
前記半導体基板の主表面上において前記第1母線部と隣り合う位置に間隔を空けて形成された第2母線部と、
前記第1母線部から前記第2母線部に向けて延びる複数の第1フィンガー部と、
前記第2母線部から前記第1母線部に向けて延び、前記第1フィンガー部と交互に並び、かつ、前記第1フィンガー部の近傍に達する複数の第2フィンガー部とを有し、
前記第1と第2母線部の少なくとも一方に断線部が形成された太陽電池セル。 - 前記第1と第2母線部の延在方向における中央部に前記断線部が形成される、請求項1に記載の太陽電池セル。
- 半導体基板と、
前記半導体基板の主表面上に形成された複数の電極部とを備え、
前記電極部は、第1母線部と、
前記半導体基板の主表面上において前記第1母線部と隣り合う位置に間隔を空けて形成された第2母線部と、
前記第1母線部から前記第2母線部に向けて延びる複数の第1フィンガー部と、
前記第2母線部から前記第1母線部に向けて延び、前記第1フィンガー部と交互に並び、かつ、前記第1フィンガー部の近傍に達する複数の第2フィンガー部とを有し、
複数の前記電極部が該第1と第2母線部の延在方向に並ぶように形成された太陽電池セル。 - 複数の前記電極部における前記第1と第2母線部間の間隔が等しい、請求項3に記載の太陽電池セル。
- 半導体基板の主表面上に第1導電型の第1不純物領域と第2導電型の第2不純物領域と
を交互に並ぶように形成する工程と、
前記第1と第2不純物領域上にそれぞれ形成される第1と第2フィンガー部と、該第1と第2フィンガー部と交差する方向に延在し、断線部を有し、前記第1と第2フィンガー部がそれぞれ接続される第1と第2母線部とを含む電極部を形成する工程と、
前記電極部が形成された前記半導体基板を前記断線部において第1と第2半導体基板に分断する工程と、
分断された前記第1と第2半導体基板上にそれぞれ形成された電極部どうしを電気的に接続する工程とを備えた太陽電池セルユニットの製造方法。 - 請求項1から請求項4のいずれかに記載の太陽電池セルを含む太陽電池モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004308575A JP4322199B2 (ja) | 2004-10-22 | 2004-10-22 | 太陽電池セル、太陽電池セルユニットの製造方法および太陽電池モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004308575A JP4322199B2 (ja) | 2004-10-22 | 2004-10-22 | 太陽電池セル、太陽電池セルユニットの製造方法および太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006120944A JP2006120944A (ja) | 2006-05-11 |
JP4322199B2 true JP4322199B2 (ja) | 2009-08-26 |
Family
ID=36538523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004308575A Expired - Fee Related JP4322199B2 (ja) | 2004-10-22 | 2004-10-22 | 太陽電池セル、太陽電池セルユニットの製造方法および太陽電池モジュール |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4322199B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9209332B2 (en) | 2008-03-31 | 2015-12-08 | Kyocera Corporation | Solar cell element and solar cell module |
KR101578356B1 (ko) * | 2009-02-25 | 2015-12-17 | 엘지전자 주식회사 | 후면전극형 태양전지 및 그 제조방법 |
KR101600628B1 (ko) * | 2009-10-30 | 2016-03-07 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US9515214B2 (en) | 2010-07-02 | 2016-12-06 | Mitsubishi Electric Corporation | Solar battery module and manufacturing method thereof |
CN102544127B (zh) * | 2011-12-27 | 2014-04-23 | 鸿富锦精密工业(深圳)有限公司 | 太阳能供电装置及其太阳能电池 |
JP5714080B2 (ja) * | 2013-11-21 | 2015-05-07 | 三菱電機株式会社 | 太陽電池モジュール |
CN106158990B (zh) * | 2016-07-21 | 2017-08-08 | 英利能源(中国)有限公司 | Ibc电池、电池组及制备方法 |
US11908958B2 (en) * | 2016-12-30 | 2024-02-20 | Maxeon Solar Pte. Ltd. | Metallization structures for solar cells |
-
2004
- 2004-10-22 JP JP2004308575A patent/JP4322199B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006120944A (ja) | 2006-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4334455B2 (ja) | 太陽電池モジュール | |
US9142706B2 (en) | Method of manufacturing solar cell | |
EP2993703B1 (en) | Solar cell and method for manufacturing the same | |
JP5879515B2 (ja) | 太陽電池の製造方法 | |
EP2212920B1 (en) | Solar cell, method of manufacturing the same, and solar cell module | |
JP5220197B2 (ja) | 太陽電池セルおよびその製造方法 | |
JPWO2008090718A1 (ja) | 太陽電池セル、太陽電池アレイおよび太陽電池モジュール | |
US9997650B2 (en) | Solar cell, manufacturing method thereof, and solar cell module | |
JP6410951B2 (ja) | 太陽電池セルおよび太陽電池セルの製造方法 | |
US20230420581A1 (en) | Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency | |
JP2006303230A (ja) | 太陽電池 | |
US9997647B2 (en) | Solar cells and manufacturing method thereof | |
JP5927027B2 (ja) | 光電変換装置 | |
US20160233353A1 (en) | Solar cell, manufacturing method thereof, and solar cell module | |
JP6395941B2 (ja) | 太陽電池セルおよび太陽電池セルの製造方法 | |
JP6021392B2 (ja) | 光電変換装置の製造方法 | |
JP4322199B2 (ja) | 太陽電池セル、太陽電池セルユニットの製造方法および太陽電池モジュール | |
JP6164939B2 (ja) | 太陽電池およびその製造方法、ならびに太陽電池モジュール | |
KR101714779B1 (ko) | 태양전지 및 이의 제조 방법 | |
TWI668880B (zh) | Solar battery unit and solar battery module | |
JP2005260157A (ja) | 太陽電池セルおよび太陽電池モジュール | |
JP4467337B2 (ja) | 太陽電池モジュール | |
JP2010283052A (ja) | 配線シート、裏面電極型太陽電池セル、配線シート付き太陽電池セルおよび太陽電池モジュール | |
JP5029921B2 (ja) | 太陽電池セルの製造方法 | |
US20120085405A1 (en) | Back electrode type solar cell, solar cell with interconnection sheet, and solar cell module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070302 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081006 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081014 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090409 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090526 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090602 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120612 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120612 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130612 Year of fee payment: 4 |
|
LAPS | Cancellation because of no payment of annual fees |