JP2012049517A5 - - Google Patents

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Publication number
JP2012049517A5
JP2012049517A5 JP2011159982A JP2011159982A JP2012049517A5 JP 2012049517 A5 JP2012049517 A5 JP 2012049517A5 JP 2011159982 A JP2011159982 A JP 2011159982A JP 2011159982 A JP2011159982 A JP 2011159982A JP 2012049517 A5 JP2012049517 A5 JP 2012049517A5
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Japan
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deposition gas
semiconductor film
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JP2011159982A
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Japanese (ja)
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JP2012049517A (ja
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Publication of JP2012049517A5 publication Critical patent/JP2012049517A5/ja
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JP2011159982A 2010-07-26 2011-07-21 微結晶半導体膜の作製方法、及び半導体装置の作製方法 Withdrawn JP2012049517A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011159982A JP2012049517A (ja) 2010-07-26 2011-07-21 微結晶半導体膜の作製方法、及び半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010167574 2010-07-26
JP2010167574 2010-07-26
JP2011159982A JP2012049517A (ja) 2010-07-26 2011-07-21 微結晶半導体膜の作製方法、及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2012049517A JP2012049517A (ja) 2012-03-08
JP2012049517A5 true JP2012049517A5 (enExample) 2014-07-31

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ID=45493973

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JP2011159982A Withdrawn JP2012049517A (ja) 2010-07-26 2011-07-21 微結晶半導体膜の作製方法、及び半導体装置の作製方法

Country Status (5)

Country Link
US (1) US8916425B2 (enExample)
JP (1) JP2012049517A (enExample)
KR (1) KR20120022568A (enExample)
CN (1) CN102345115B (enExample)
TW (1) TWI562201B (enExample)

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JP5785770B2 (ja) 2010-05-14 2015-09-30 株式会社半導体エネルギー研究所 微結晶半導体膜の作製方法、及び半導体装置の作製方法
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102386072B (zh) 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
US8450158B2 (en) * 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
WO2013021416A1 (ja) * 2011-08-09 2013-02-14 パナソニック株式会社 薄膜半導体装置及び薄膜半導体装置の製造方法
JP5918572B2 (ja) 2012-03-06 2016-05-18 株式会社神戸製鋼所 チタン鋳塊およびチタン合金鋳塊の連続鋳造装置および連続鋳造方法
US9484199B2 (en) * 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
CN104103583B (zh) * 2014-06-24 2017-02-15 京东方科技集团股份有限公司 阵列基板及其制作方法和显示面板
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
CN108155152B (zh) * 2017-12-19 2019-09-06 长鑫存储技术有限公司 导体结构、电容器阵列结构及制备方法
KR20240025048A (ko) * 2019-06-17 2024-02-26 어플라이드 머티어리얼스, 인코포레이티드 디스플레이를 위한 고밀도 플라즈마 cvd 미정질 또는 비정질 si 막
US11198606B2 (en) * 2019-09-23 2021-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
TWI834972B (zh) * 2020-05-29 2024-03-11 日商國際電氣股份有限公司 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式
US11562902B2 (en) * 2020-07-19 2023-01-24 Applied Materials, Inc. Hydrogen management in plasma deposited films
CN119813549B (zh) * 2024-12-25 2025-08-29 湖南创化低碳环保科技有限公司 一种微晶半导体蓄电池

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JPH07131030A (ja) 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
FR2719416B1 (fr) * 1994-04-29 1996-07-05 Thomson Lcd Procédé de passivation des flancs d'un composant semiconducteur à couches minces.
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US8450158B2 (en) * 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device

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