JP2012151506A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012151506A5 JP2012151506A5 JP2012089512A JP2012089512A JP2012151506A5 JP 2012151506 A5 JP2012151506 A5 JP 2012151506A5 JP 2012089512 A JP2012089512 A JP 2012089512A JP 2012089512 A JP2012089512 A JP 2012089512A JP 2012151506 A5 JP2012151506 A5 JP 2012151506A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- silicon
- photoelectric conversion
- type semiconductor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000010790 dilution Methods 0.000 claims description 5
- 239000012895 dilution Substances 0.000 claims description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 238000001069 Raman spectroscopy Methods 0.000 claims description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 125000004437 phosphorous atom Chemical group 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012089512A JP2012151506A (ja) | 2005-10-03 | 2012-04-10 | シリコン系薄膜光電変換装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005290191 | 2005-10-03 | ||
| JP2005290191 | 2005-10-03 | ||
| JP2012089512A JP2012151506A (ja) | 2005-10-03 | 2012-04-10 | シリコン系薄膜光電変換装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007538747A Division JP5259189B2 (ja) | 2005-10-03 | 2006-09-29 | シリコン系薄膜光電変換装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012151506A JP2012151506A (ja) | 2012-08-09 |
| JP2012151506A5 true JP2012151506A5 (enExample) | 2013-05-30 |
Family
ID=37906224
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007538747A Expired - Fee Related JP5259189B2 (ja) | 2005-10-03 | 2006-09-29 | シリコン系薄膜光電変換装置の製造方法 |
| JP2012089512A Pending JP2012151506A (ja) | 2005-10-03 | 2012-04-10 | シリコン系薄膜光電変換装置の製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007538747A Expired - Fee Related JP5259189B2 (ja) | 2005-10-03 | 2006-09-29 | シリコン系薄膜光電変換装置の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20100147379A1 (enExample) |
| EP (1) | EP1933388A1 (enExample) |
| JP (2) | JP5259189B2 (enExample) |
| KR (1) | KR101057208B1 (enExample) |
| CN (2) | CN101283455B (enExample) |
| TW (1) | TW200721520A (enExample) |
| WO (1) | WO2007040183A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100216278A1 (en) * | 2007-10-29 | 2010-08-26 | Atomic Energy Council - Institute Of Nuclear Energy Research | Method for making multi-cystalline film of solar cell |
| JP4531833B2 (ja) | 2007-12-05 | 2010-08-25 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びクリーニング方法 |
| JP5148536B2 (ja) * | 2007-12-05 | 2013-02-20 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置の運用方法及び基板処理装置 |
| CN102187471B (zh) * | 2008-10-14 | 2013-07-31 | 株式会社钟化 | 混合硅系薄膜太阳能电池及其制造方法 |
| KR101531700B1 (ko) * | 2008-12-01 | 2015-06-25 | 주성엔지니어링(주) | 박막형 태양전지의 제조방법 |
| JP2010129971A (ja) * | 2008-12-01 | 2010-06-10 | Sharp Corp | シリコン系薄膜光電変換装置およびその製造方法 |
| DE102008063737A1 (de) * | 2008-12-18 | 2010-06-24 | Forschungszentrum Jülich GmbH | Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat |
| KR101086074B1 (ko) * | 2009-02-18 | 2011-11-23 | 한국생산기술연구원 | 실리콘 나노 와이어 제조 방법, 실리콘 나노 와이어를 포함하는 태양전지 및 태양전지의 제조 방법 |
| TW201041158A (en) * | 2009-05-12 | 2010-11-16 | Chin-Yao Tsai | Thin film solar cell and manufacturing method thereof |
| KR101106480B1 (ko) * | 2009-06-12 | 2012-01-20 | 한국철강 주식회사 | 광기전력 장치의 제조 방법 |
| CN101894871B (zh) * | 2009-11-18 | 2012-09-05 | 湖南共创光伏科技有限公司 | 高转化率硅晶及薄膜复合型单结pin太阳能电池及其制造方法 |
| CN102108494B (zh) * | 2009-12-23 | 2013-01-16 | 财团法人工业技术研究院 | 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置 |
| JP4775869B1 (ja) * | 2010-05-27 | 2011-09-21 | シャープ株式会社 | 光電変換装置 |
| WO2012043070A1 (ja) * | 2010-09-27 | 2012-04-05 | 富士フイルム株式会社 | 光電変換素子の製造方法、固体撮像素子、撮像装置 |
| US8513046B2 (en) * | 2010-10-07 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| WO2012056774A1 (ja) * | 2010-10-29 | 2012-05-03 | リンテック株式会社 | 透明導電性フィルム、電子デバイス及び電子デバイスの製造方法 |
| US20130224937A1 (en) * | 2010-11-16 | 2013-08-29 | Sharp Kabushiki Kaisha | Method for manufacturing semiconductor device |
| CN102479863A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 高光电转换效率的三层型太阳能电池 |
| CN102479873A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 高光电转换效率的压合型太阳能电池及其制造方法 |
| KR20120064364A (ko) * | 2010-12-09 | 2012-06-19 | 삼성전자주식회사 | 태양 전지의 제조 방법 |
| JP5792101B2 (ja) * | 2012-03-15 | 2015-10-07 | 東京エレクトロン株式会社 | 積層半導体膜の成膜方法 |
| JPWO2014002353A1 (ja) * | 2012-06-27 | 2016-05-30 | パナソニックＩｐマネジメント株式会社 | 固体撮像素子及びその製造方法 |
| US20140004648A1 (en) * | 2012-06-28 | 2014-01-02 | International Business Machines Corporation | Transparent conductive electrode for three dimensional photovoltaic device |
| JPWO2014050304A1 (ja) * | 2012-09-27 | 2016-08-22 | パナソニックＩｐマネジメント株式会社 | 光電変換素子とその製造方法 |
| EP2740817A1 (en) * | 2012-12-05 | 2014-06-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Microcrystalline silicon thin film PECVD using hydrogen and silanes mixtures |
| KR102195003B1 (ko) | 2014-06-18 | 2020-12-24 | 삼성전자주식회사 | 반도체 다이오드, 가변 저항 메모리 장치 및 가변 저항 메모리 장치의 제조 방법 |
| US20150372160A1 (en) * | 2014-06-20 | 2015-12-24 | Nanyang Technological University | P-type dopant and method for p-type doping of a semiconductor |
| CN109913858B (zh) * | 2019-03-13 | 2021-03-23 | Tcl华星光电技术有限公司 | 化学气相沉积非晶硅镀膜均匀性的改善方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5289030A (en) * | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
| JP3146112B2 (ja) * | 1993-12-24 | 2001-03-12 | シャープ株式会社 | プラズマｃｖｄ装置 |
| US6239463B1 (en) * | 1997-08-28 | 2001-05-29 | Siliconix Incorporated | Low resistance power MOSFET or other device containing silicon-germanium layer |
| US6337224B1 (en) * | 1997-11-10 | 2002-01-08 | Kaneka Corporation | Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method |
| US6262465B1 (en) * | 1998-09-25 | 2001-07-17 | Picometrix, Inc. | Highly-doped P-type contact for high-speed, front-side illuminated photodiode |
| JP3589581B2 (ja) * | 1999-02-26 | 2004-11-17 | 株式会社カネカ | タンデム型の薄膜光電変換装置の製造方法 |
| JP4358343B2 (ja) * | 1999-02-26 | 2009-11-04 | 株式会社カネカ | シリコン系薄膜光電変換装置の製造方法 |
| EP1032052B1 (en) * | 1999-02-26 | 2010-07-21 | Kaneka Corporation | Method of manufacturing silicon based thin film photoelectric conversion device |
| JP2001267611A (ja) * | 2000-01-13 | 2001-09-28 | Sharp Corp | 薄膜太陽電池及びその製造方法 |
| US6436488B1 (en) * | 2000-06-12 | 2002-08-20 | Agilent Technologies, Inc. | Chemical vapor deposition method for amorphous silicon and resulting film |
| JP3576094B2 (ja) * | 2000-12-07 | 2004-10-13 | シャープ株式会社 | 薄膜製造方法 |
| US6815736B2 (en) * | 2001-02-09 | 2004-11-09 | Midwest Research Institute | Isoelectronic co-doping |
| US6552371B2 (en) * | 2001-02-16 | 2003-04-22 | Teraburst Networks Inc. | Telecommunications switch array with thyristor addressing |
| JP2002280584A (ja) * | 2001-03-19 | 2002-09-27 | Kanegafuchi Chem Ind Co Ltd | ハイブリッド型薄膜光電変換装置とその製造方法 |
| JP4560245B2 (ja) * | 2001-06-29 | 2010-10-13 | キヤノン株式会社 | 光起電力素子 |
| JP2003068659A (ja) * | 2001-08-29 | 2003-03-07 | Sharp Corp | プラズマ処理装置及びプラズマ処理方法、それらを用いて作製した薄膜、基板、半導体装置 |
| CA2396325C (en) * | 2001-09-06 | 2010-03-30 | Sumitomo Electric Industries, Ltd. | Zn1-xmgxsyse1-y pin photodiode and zn1-xmgxsyse1-y avalanche-photodiode |
| US6734462B1 (en) * | 2001-12-07 | 2004-05-11 | The United States Of America As Represented By The Secretary Of The Army | Silicon carbide power devices having increased voltage blocking capabilities |
| JP3960792B2 (ja) * | 2001-12-21 | 2007-08-15 | シャープ株式会社 | プラズマｃｖｄ装置、非晶質シリコン系薄膜の製造方法 |
| US6794734B2 (en) * | 2002-05-03 | 2004-09-21 | Mia-Com | Heterojunction P-I-N diode and method of making the same |
| JP2004006537A (ja) * | 2002-05-31 | 2004-01-08 | Ishikawajima Harima Heavy Ind Co Ltd | 薄膜形成方法及び装置並びに太陽電池の製造方法並びに太陽電池 |
| JP2004128110A (ja) * | 2002-10-01 | 2004-04-22 | Fuji Electric Holdings Co Ltd | 薄膜太陽電池の製造方法 |
| JP2004165394A (ja) * | 2002-11-13 | 2004-06-10 | Canon Inc | 積層型光起電力素子 |
| JP2004289091A (ja) * | 2003-03-25 | 2004-10-14 | Canon Inc | 光起電力素子 |
| US6841806B1 (en) * | 2003-06-24 | 2005-01-11 | The University Of Connecticut | Heterojunction thyristor-based amplifier |
| JP4068043B2 (ja) * | 2003-10-28 | 2008-03-26 | 株式会社カネカ | 積層型光電変換装置 |
| JP2005123466A (ja) * | 2003-10-17 | 2005-05-12 | Sharp Corp | シリコン系薄膜光電変換装置の製造方法およびその方法により製造されたシリコン系薄膜光電変換装置 |
-
2006
- 2006-09-29 WO PCT/JP2006/319510 patent/WO2007040183A1/ja not_active Ceased
- 2006-09-29 CN CN2006800369804A patent/CN101283455B/zh not_active Expired - Fee Related
- 2006-09-29 JP JP2007538747A patent/JP5259189B2/ja not_active Expired - Fee Related
- 2006-09-29 KR KR1020087010677A patent/KR101057208B1/ko not_active Expired - Fee Related
- 2006-09-29 US US12/088,482 patent/US20100147379A1/en not_active Abandoned
- 2006-09-29 CN CN2010101095091A patent/CN101771098B/zh not_active Expired - Fee Related
- 2006-09-29 EP EP06810890A patent/EP1933388A1/en not_active Withdrawn
- 2006-10-03 TW TW095136792A patent/TW200721520A/zh not_active IP Right Cessation
-
2012
- 2012-04-10 JP JP2012089512A patent/JP2012151506A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012151506A5 (enExample) | ||
| JP2009152566A5 (enExample) | ||
| JP2009283923A5 (enExample) | ||
| JP2008177539A5 (enExample) | ||
| WO2011133965A3 (en) | Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells | |
| JP2009283916A5 (enExample) | ||
| WO2011130017A3 (en) | Multi-layer sin for functional and optical graded arc layers on crystalline solar cells | |
| JP2009295970A5 (enExample) | ||
| WO2010080446A3 (en) | Microcrystalline silicon alloys for thin film and wafer based solar applications | |
| CN101708471A (zh) | 氧化锌/氧化亚铜纳米异质结光催化材料及其制备方法 | |
| JP4902779B2 (ja) | 光電変換装置及びその製造方法 | |
| JP2011135053A5 (enExample) | ||
| Shin et al. | Radio frequency plasma deposited boron doped high conductivity p-type nano crystalline silicon oxide thin film for solar cell window layer | |
| CN104037244A (zh) | 一种晶硅太阳能电池钝化材料Al2O3浓度梯度掺杂ZnO薄膜及制备方法 | |
| CN101235492A (zh) | 使得非晶硅电池变得更稳定的化学退火办法 | |
| Rohde et al. | Plasma enhanced chemical vapor deposition process optimization for thin film silicon tandem junction solar cells | |
| CN103137770A (zh) | 一种石墨烯/Si p-n 双结太阳能电池及其制备方法 | |
| Bhardwaj et al. | Work function tuning of directly grown multi-layer graphene on silicon by PECVD and fabrication of Ag/ITO/Gr/n-Si/Ag solar cell | |
| EP2549544A1 (en) | Solar cell and method for manufacturing same | |
| CN102157594A (zh) | nc-Si:H/SiNx超晶格量子阱太阳电池 | |
| Kim et al. | Crystallization behavior of microcrystalline silicon germanium | |
| TW201145539A (en) | Methods of forming a thin-film solar energy device | |
| Yi et al. | Interfacial electronic structures between fullerene and multilayer graphene for n-type organic semiconducting devices | |
| JP2013125884A5 (enExample) | ||
| TWI511309B (zh) | 具有雙層電池結構之串聯式薄膜矽太陽能電池 |