JPWO2014050304A1 - 光電変換素子とその製造方法 - Google Patents
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 140
- 230000007423 decrease Effects 0.000 claims abstract description 12
- 230000003247 decreasing effect Effects 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 abstract description 114
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 40
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 40
- 239000011574 phosphorus Substances 0.000 abstract description 40
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052796 boron Inorganic materials 0.000 abstract description 15
- 238000009826 distribution Methods 0.000 description 32
- 238000000034 method Methods 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 4
- 238000004050 hot filament vapor deposition Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021425 protocrystalline silicon Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
- 結晶性半導体層の受光面側に形成される真性非晶質半導体層と、
前記真性非晶質半導体層上に形成され結晶性半導体層と同じ導電型の不純物を含む導電性非晶質半導体層と、
前記導電性非晶質半導体層上に形成される透明導電膜層と、
を含み、
前記導電性非晶質半導体層は、前記真性非晶質半導体層を挟み前記結晶性半導体層側の位置で前記不純物の濃度がピークとなり、その位置よりも透明導電膜層側の位置で不純物の濃度がピーク濃度よりも低下する、光電変換素子。 - 結晶性半導体層上に形成される真性非晶質半導体層と、
前記真性非晶質半導体層上に形成されるp型非晶質半導体層と、
前記p型非晶質半導体層上に形成される透明導電膜層と、
を含み、
前記p型非晶質半導体層は、前記透明導電膜層との界面の位置よりも前記真性非晶質半導体層側にアクセプタ濃度がピークとなる位置を有する、光電変換素子。 - 請求項2に記載の光電変換素子において、
前記アクセプタ濃度は、前記ピークとなる位置から前記透明導電膜層との界面の位置に向かって階段状に減少する、光電変換素子。 - 請求項2または3に記載の光電変換素子において、
前記p型非晶質半導体層は、第2のp型非晶質半導体層と、前記第2のp型非晶質半導体層の前記真性非晶質半導体層が設けられる側と反対側に設けられる第3のp型非晶質半導体層と、を備え、
前記第2のp型非晶質半導体層においてアクセプタ濃度がピークとなる、光電変換素子。 - 請求項4に記載の光電変換素子において、
前記第2のp型非晶質半導体層の前記真性非晶質半導体層が設けられる側に設けられる第1のp型非晶質半導体層を、さらに備え、
前記第1のp型非晶質半導体層のアクセプタ濃度は、前記第3のp型非晶質半導体層のアクセプタ濃度より低い、光電変換素子。 - 結晶性半導体をトレイに配置し、
前記結晶性半導体上に真性非晶質半導体層を形成し、
前記真性非晶質半導体層上にp型非晶質半導体層を形成し、
前記結晶性半導体上に前記真性非晶質半導体層と前記p型非晶質半導体層を形成した積層体を搬出し、
同じ前記トレイを用いて次の前記結晶性半導体を配置して上記工程を繰り返す、光電変換素子の製造方法であって、
前記p型非晶質半導体層の形成は、予め定めたピーク濃度のアクセプタ濃度で形成した後、そのピーク濃度からアクセプタ濃度を減少させて形成して、前記p型非晶質半導体層の形成が終了する、光電変換素子の製造方法。 - 請求項2から5のいずれか1に記載の光電変換素子において、
前記真性非晶質半導体層と前記p型半導体層と前記透明導電膜層は、裏面側に設けられる、光電変換素子。 - 請求項1に記載される光電変換素子において、
前記結晶性半導体層は、前記導電型がn型であり、
前記導電性非晶質半導体層は、前記導電型がn型である、光電変換素子。 - 請求項1または8に記載の光電変換素子において、
前記不純物の濃度は、前記ピークとなる位置から前記透明導電膜層との界面の位置に向かって階段状に減少する、光電変換素子。 - 請求項1または8に記載の光電変換素子において、
前記導電性非晶質半導体層は、第1の導電性非晶質半導体層と、前記第1の導電性非晶質半導体層の前記真性非晶質半導体層が設けられる側と反対側に設けられる第2の導電性非晶質半導体層と、を備え、
前記第1の導電性非晶質半導体層において前記不純物の濃度がピークとなる、光電変換素子。
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PCT/JP2013/070938 WO2014050304A1 (ja) | 2012-09-27 | 2013-08-01 | 光電変換素子とその製造方法 |
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Families Citing this family (7)
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CN106062973B (zh) * | 2014-04-11 | 2018-05-04 | 夏普株式会社 | 光电转换装置 |
WO2018116782A1 (ja) * | 2016-12-21 | 2018-06-28 | パナソニックIpマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
CN110998869B (zh) * | 2017-08-09 | 2022-12-27 | 株式会社钟化 | 光电转换元件的制造方法 |
JP6994866B2 (ja) * | 2017-08-09 | 2022-01-14 | 株式会社カネカ | 光電変換素子の製造方法 |
JP6994867B2 (ja) * | 2017-08-09 | 2022-01-14 | 株式会社カネカ | 光電変換素子の製造方法 |
JP6899731B2 (ja) * | 2017-08-09 | 2021-07-07 | 株式会社カネカ | 光電変換素子の製造方法 |
JP2020161551A (ja) * | 2019-03-25 | 2020-10-01 | パナソニック株式会社 | 太陽電池セル及び太陽電池モジュール |
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JPS5892218A (ja) * | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPH0260172A (ja) * | 1988-08-25 | 1990-02-28 | Sharp Corp | 太陽電池の製造方法 |
JPH02119126A (ja) * | 1989-08-25 | 1990-05-07 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JP2003282458A (ja) * | 2002-03-26 | 2003-10-03 | Sanyo Electric Co Ltd | 半導体素子及びその製造方法 |
JP2003324209A (ja) * | 2001-11-29 | 2003-11-14 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
JP2005101239A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
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JP2012009685A (ja) * | 2010-06-25 | 2012-01-12 | Kaneka Corp | 積層型光電変換装置の製造方法 |
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-
2013
- 2013-08-01 JP JP2014538252A patent/JPWO2014050304A1/ja active Pending
- 2013-08-01 WO PCT/JP2013/070938 patent/WO2014050304A1/ja active Application Filing
Patent Citations (10)
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JPS5892218A (ja) * | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPH0260172A (ja) * | 1988-08-25 | 1990-02-28 | Sharp Corp | 太陽電池の製造方法 |
JPH02119126A (ja) * | 1989-08-25 | 1990-05-07 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JP2003324209A (ja) * | 2001-11-29 | 2003-11-14 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
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JP2005101239A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2012151506A (ja) * | 2005-10-03 | 2012-08-09 | Sharp Corp | シリコン系薄膜光電変換装置の製造方法 |
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