CN109913858B - 化学气相沉积非晶硅镀膜均匀性的改善方法 - Google Patents
化学气相沉积非晶硅镀膜均匀性的改善方法 Download PDFInfo
- Publication number
- CN109913858B CN109913858B CN201910190768.2A CN201910190768A CN109913858B CN 109913858 B CN109913858 B CN 109913858B CN 201910190768 A CN201910190768 A CN 201910190768A CN 109913858 B CN109913858 B CN 109913858B
- Authority
- CN
- China
- Prior art keywords
- amorphous silicon
- chemical vapor
- vapor deposition
- uniformity
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 105
- 239000011248 coating agent Substances 0.000 title claims abstract description 51
- 238000000576 coating method Methods 0.000 title claims abstract description 51
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 238000013401 experimental design Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000008199 coating composition Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910190768.2A CN109913858B (zh) | 2019-03-13 | 2019-03-13 | 化学气相沉积非晶硅镀膜均匀性的改善方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910190768.2A CN109913858B (zh) | 2019-03-13 | 2019-03-13 | 化学气相沉积非晶硅镀膜均匀性的改善方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109913858A CN109913858A (zh) | 2019-06-21 |
CN109913858B true CN109913858B (zh) | 2021-03-23 |
Family
ID=66964674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910190768.2A Active CN109913858B (zh) | 2019-03-13 | 2019-03-13 | 化学气相沉积非晶硅镀膜均匀性的改善方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109913858B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115376893B (zh) * | 2022-10-24 | 2024-05-14 | 拉普拉斯新能源科技股份有限公司 | 一种掺杂非晶硅层、制备方法、制备装置和太阳能电池 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1933388A1 (en) * | 2005-10-03 | 2008-06-18 | Sharp Kabushiki Kaisha | Silicon-based thin film photoelectric converter, and method and apparatus for manufacturing same |
CN101245447A (zh) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | 纳米晶硅的等离子体沉积方法 |
CN102652186A (zh) * | 2009-12-22 | 2012-08-29 | 应用材料公司 | 利用持续的等离子体的pecvd多重步骤处理 |
-
2019
- 2019-03-13 CN CN201910190768.2A patent/CN109913858B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN109913858A (zh) | 2019-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4018625B2 (ja) | 薄膜トランジスタのための多段階cvd法 | |
US7541229B2 (en) | Thin film transistor and method for fabricating same | |
US7897966B2 (en) | Method for manufacturing flat substrates | |
CN110867458B (zh) | 金属氧化物半导体薄膜晶体管阵列基板及制作方法 | |
JP2007221137A (ja) | シリコン層の形成方法及びそれを用いた表示基板の製造方法 | |
US8299466B2 (en) | Thin film transistors having multiple doped silicon layers | |
CN108700788A (zh) | 用于液晶显示器的高电容电容器的界面工程 | |
JP2008124111A (ja) | プラズマcvd法によるシリコン系薄膜の形成方法 | |
CN109913858B (zh) | 化学气相沉积非晶硅镀膜均匀性的改善方法 | |
CN104037233A (zh) | 薄膜晶体管及其制作方法、oled背板和显示装置 | |
CN110098126A (zh) | 一种薄膜晶体管的制作方法及薄膜晶体管和显示装置 | |
CN102651399A (zh) | 微晶非晶硅复合型薄膜晶体管及其制造方法 | |
JP2002252181A (ja) | 多結晶半導体層の製造方法及びレーザアニール装置 | |
KR20030056828A (ko) | 절연막 형성방법 및 이를 이용한 폴리실리콘박막트랜지스터의 형성방법 | |
CN102842620A (zh) | 薄膜晶体管及其制作方法、阵列基板、显示装置 | |
CN102820224A (zh) | 用于tft干刻工艺中的界面层处理方法 | |
JP3196506U (ja) | ディフューザー及びこれを用いたpecvd装置 | |
US11901420B2 (en) | Manufacturing method for gate electrode and thin film transistor and display panel | |
KR100710801B1 (ko) | 균일한 막질 형성을 위한 스퍼터링 장치 | |
JPH10140332A (ja) | 非晶質ito膜の作製方法 | |
CN108231794A (zh) | 阵列基板的制备方法、阵列基板 | |
Kikuchi | Manufacturing equipment technology for automotive display | |
CN114242338B (zh) | 一种提高ito薄膜电阻值的方法 | |
Bender | Thin‐Film PVD (Rotary Target) | |
KR100811282B1 (ko) | 다결정 실리콘 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210528 Address after: No. 338, Fangzhou Road, Suzhou Industrial Park, Suzhou, Jiangsu 215000 Patentee after: Suzhou Huaxing Optoelectronic Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL Huaxing Photoelectric Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231113 Address after: 9-2 Tangming Avenue, Gongming street, Guangming New District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY Co.,Ltd. Address before: No. 338, Fangzhou Road, Suzhou Industrial Park, Suzhou, Jiangsu 215000 Patentee before: Suzhou Huaxing Optoelectronic Technology Co.,Ltd. |