JP2011135053A5 - - Google Patents

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Publication number
JP2011135053A5
JP2011135053A5 JP2010253550A JP2010253550A JP2011135053A5 JP 2011135053 A5 JP2011135053 A5 JP 2011135053A5 JP 2010253550 A JP2010253550 A JP 2010253550A JP 2010253550 A JP2010253550 A JP 2010253550A JP 2011135053 A5 JP2011135053 A5 JP 2011135053A5
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JP
Japan
Prior art keywords
layer
microcrystalline silicon
silicon layer
photoelectric conversion
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010253550A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011135053A (ja
JP4902779B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2010253550A external-priority patent/JP4902779B2/ja
Priority to JP2010253550A priority Critical patent/JP4902779B2/ja
Priority to CN2010800358789A priority patent/CN102473759A/zh
Priority to US13/391,570 priority patent/US20120145239A1/en
Priority to EP10833189.3A priority patent/EP2458644A4/en
Priority to KR1020127002699A priority patent/KR20120042894A/ko
Priority to PCT/JP2010/070853 priority patent/WO2011065343A1/ja
Publication of JP2011135053A publication Critical patent/JP2011135053A/ja
Publication of JP2011135053A5 publication Critical patent/JP2011135053A5/ja
Publication of JP4902779B2 publication Critical patent/JP4902779B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010253550A 2009-11-30 2010-11-12 光電変換装置及びその製造方法 Expired - Fee Related JP4902779B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010253550A JP4902779B2 (ja) 2009-11-30 2010-11-12 光電変換装置及びその製造方法
KR1020127002699A KR20120042894A (ko) 2009-11-30 2010-11-24 광전 변환 장치 및 그 제조 방법
US13/391,570 US20120145239A1 (en) 2009-11-30 2010-11-24 Photoelectric converter and method for producing same
EP10833189.3A EP2458644A4 (en) 2009-11-30 2010-11-24 PHOTOELECTRIC CONVERTER AND METHOD FOR THE PRODUCTION THEREOF
CN2010800358789A CN102473759A (zh) 2009-11-30 2010-11-24 光电转换装置和其制造方法
PCT/JP2010/070853 WO2011065343A1 (ja) 2009-11-30 2010-11-24 光電変換装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009272011 2009-11-30
JP2009272011 2009-11-30
JP2010253550A JP4902779B2 (ja) 2009-11-30 2010-11-12 光電変換装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2011135053A JP2011135053A (ja) 2011-07-07
JP2011135053A5 true JP2011135053A5 (enExample) 2011-12-01
JP4902779B2 JP4902779B2 (ja) 2012-03-21

Family

ID=44066448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010253550A Expired - Fee Related JP4902779B2 (ja) 2009-11-30 2010-11-12 光電変換装置及びその製造方法

Country Status (6)

Country Link
US (1) US20120145239A1 (enExample)
EP (1) EP2458644A4 (enExample)
JP (1) JP4902779B2 (enExample)
KR (1) KR20120042894A (enExample)
CN (1) CN102473759A (enExample)
WO (1) WO2011065343A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2743992B1 (en) * 2011-08-11 2020-07-08 Kaneka Corp METHOD FOR MANUFACTURING A STACKED PHOTOELECTRIC CONVERSION DEVICE
KR101770266B1 (ko) * 2011-09-15 2017-08-22 엘지전자 주식회사 박막 태양전지 모듈
KR101770267B1 (ko) * 2011-10-04 2017-08-22 엘지전자 주식회사 박막 태양전지 모듈
WO2013065538A1 (ja) * 2011-11-03 2013-05-10 三洋電機株式会社 光電変換装置
WO2013080803A1 (ja) * 2011-11-30 2013-06-06 三洋電機株式会社 光起電力装置
KR101302373B1 (ko) 2011-12-21 2013-09-06 주식회사 테스 태양전지 제조방법
KR101453967B1 (ko) * 2012-02-20 2014-10-29 고려대학교 산학협력단 다중 밴드갭 적층형 태양전지 및 다중 밴드갭 적층형 태양전지 형성 방법
TWI469380B (zh) * 2013-11-08 2015-01-11 Ind Tech Res Inst 異質接面太陽電池結構
WO2017195722A1 (ja) * 2016-05-09 2017-11-16 株式会社カネカ 積層型光電変換装置およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2984537B2 (ja) * 1994-03-25 1999-11-29 キヤノン株式会社 光起電力素子
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JPH11251612A (ja) * 1998-03-03 1999-09-17 Canon Inc 光起電力素子の製造方法
JP4488550B2 (ja) * 1999-06-09 2010-06-23 富士電機システムズ株式会社 薄膜太陽電池とその製造方法
JP2004165394A (ja) * 2002-11-13 2004-06-10 Canon Inc 積層型光起電力素子
JP4780929B2 (ja) * 2003-05-13 2011-09-28 京セラ株式会社 光電変換装置およびこれを用いた光発電装置
DE102004061360A1 (de) * 2004-12-21 2006-07-13 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer Dünnschichtsolarzelle mit mikrokristallinem Silizium sowie Schichtfolge
JP5309426B2 (ja) * 2006-03-29 2013-10-09 株式会社Ｉｈｉ 微結晶シリコン膜形成方法及び太陽電池
JP5473187B2 (ja) * 2006-09-04 2014-04-16 三菱重工業株式会社 製膜条件設定方法、光電変換装置の製造方法及び検査方法
WO2008078471A1 (ja) * 2006-12-25 2008-07-03 Sharp Kabushiki Kaisha 光電変換装置及びその製造方法
JP5330723B2 (ja) * 2008-03-28 2013-10-30 三菱重工業株式会社 光電変換装置

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