WO2011091967A3 - Photovoltaische mehrfach-dünnschichtsolarzelle - Google Patents

Photovoltaische mehrfach-dünnschichtsolarzelle Download PDF

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Publication number
WO2011091967A3
WO2011091967A3 PCT/EP2011/000245 EP2011000245W WO2011091967A3 WO 2011091967 A3 WO2011091967 A3 WO 2011091967A3 EP 2011000245 W EP2011000245 W EP 2011000245W WO 2011091967 A3 WO2011091967 A3 WO 2011091967A3
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WO
WIPO (PCT)
Prior art keywords
layer
cell
film solar
solar cell
sub
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PCT/EP2011/000245
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English (en)
French (fr)
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WO2011091967A2 (de
Inventor
Clemens Feser
Jürgen LACOMBE
Karsten Von Maydell
Carsten Agert
Original Assignee
Ewe-Forschungszentrum Für Energietechnologie E. V.
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Publication date
Application filed by Ewe-Forschungszentrum Für Energietechnologie E. V. filed Critical Ewe-Forschungszentrum Für Energietechnologie E. V.
Publication of WO2011091967A2 publication Critical patent/WO2011091967A2/de
Publication of WO2011091967A3 publication Critical patent/WO2011091967A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03687—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline AIVBIV alloys, e.g. uc-SiGe, uc-SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft eine photovoltaische Mehrfach-Dünnschichtsolarzelle, umfassend ein Trägersubstrat (1) sowie zumindest eine obere und eine untere Teilzelle, die jeweils als pin-Struktur, welche eine p-leitende Schicht (p-Schicht), eine n-leitende Schicht (n-Schicht) und eine zwischen p- und n-Schicht angeordnete intrinsische Schicht (i-Schicht) umfasst, ausgebildet sind, wobei ausgehend von einer für den Lichteinfall ausgebildeten Vorderseite der Dünnschichtsolarzelle, auf dem Trägersubstrat und/oder auf einer oder mehreren weiteren Schichten, zunächst die obere Teilzelle (3) angeordnet ist, bei der die i-Schicht aus hydrogenisiertem amorphem Silizium ausgebildet ist und weiterhin unterhalb der oberen Teilzelle, gegebenenfalls auf einer oder mehreren weiteren Zwischenschichten, die untere Teilzelle (5) angeordnet ist und wobei bei jeder Teilzelle jeweils die p-leitende Schicht auf der der Vorderseite zugewandten Seite angeordnet ist. Wesentlich ist, dass bei der unteren Teilzelle die i-Schicht aus mikrokristallinem Germanium ausgebildet ist.
PCT/EP2011/000245 2010-01-29 2011-01-21 Photovoltaische mehrfach-dünnschichtsolarzelle WO2011091967A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201010006314 DE102010006314A1 (de) 2010-01-29 2010-01-29 Photovoltaische Mehrfach-Dünnschichtsolarzelle
DE102010006314.2 2010-01-29

Publications (2)

Publication Number Publication Date
WO2011091967A2 WO2011091967A2 (de) 2011-08-04
WO2011091967A3 true WO2011091967A3 (de) 2011-12-22

Family

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Family Applications (1)

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PCT/EP2011/000245 WO2011091967A2 (de) 2010-01-29 2011-01-21 Photovoltaische mehrfach-dünnschichtsolarzelle

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DE (1) DE102010006314A1 (de)
WO (1) WO2011091967A2 (de)

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DE102011115340A1 (de) * 2011-10-07 2013-04-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement im Mehrschichtaufbau und hieraus gebildetes Modul
AU2014280332B2 (en) 2013-06-13 2017-09-07 Basf Se Detector for optically detecting at least one object
AU2014280335B2 (en) 2013-06-13 2018-03-22 Basf Se Detector for optically detecting an orientation of at least one object
CN103625920B (zh) * 2013-11-22 2016-06-22 中国科学院深圳先进技术研究院 工件自动输送及组装生产系统及生产方法
EP3167304A4 (de) 2014-07-08 2018-02-21 Basf Se Detektor zur bestimmung der position mindestens eines objekts
US11125880B2 (en) 2014-12-09 2021-09-21 Basf Se Optical detector
JP6841769B2 (ja) 2015-01-30 2021-03-10 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 少なくとも１個の物体を光学的に検出する検出器
WO2017012986A1 (en) 2015-07-17 2017-01-26 Trinamix Gmbh Detector for optically detecting at least one object
JP6755316B2 (ja) 2015-09-14 2020-09-16 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 少なくとも１つの物体の少なくとも１つの画像を記録するカメラ
US20190140129A1 (en) 2016-04-06 2019-05-09 Trinamix Gmbh Detector for an optical detection of at least one object
KR102492134B1 (ko) 2016-07-29 2023-01-27 트리나미엑스 게엠베하 광학 센서 및 광학적 검출용 검출기
KR102431355B1 (ko) 2016-10-25 2022-08-10 트리나미엑스 게엠베하 적어도 하나의 대상체의 광학적 검출을 위한 검출기
US10890491B2 (en) 2016-10-25 2021-01-12 Trinamix Gmbh Optical detector for an optical detection
JP6979068B2 (ja) 2016-11-17 2021-12-08 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 少なくとも１つの物体を光学的に検出するための検出器
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
WO2018115073A1 (en) 2016-12-21 2018-06-28 Trinamix Gmbh Detector for an optical detection
EP3612805A1 (de) 2017-04-20 2020-02-26 trinamiX GmbH Optischer detektor
KR102568462B1 (ko) 2017-06-26 2023-08-21 트리나미엑스 게엠베하 적어도 하나의 대상체의 위치를 결정하는 검출기

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DE102010006314A1 (de) 2011-08-04
WO2011091967A2 (de) 2011-08-04

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