WO2008078471A1 - 光電変換装置及びその製造方法 - Google Patents
光電変換装置及びその製造方法 Download PDFInfo
- Publication number
- WO2008078471A1 WO2008078471A1 PCT/JP2007/072208 JP2007072208W WO2008078471A1 WO 2008078471 A1 WO2008078471 A1 WO 2008078471A1 JP 2007072208 W JP2007072208 W JP 2007072208W WO 2008078471 A1 WO2008078471 A1 WO 2008078471A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type layer
- photoelectric converter
- fabricating
- same
- photoelectric
- Prior art date
Links
- 238000002425 crystallisation Methods 0.000 abstract 2
- 230000008025 crystallization Effects 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/520,918 US8288647B2 (en) | 2006-12-25 | 2007-11-15 | Photoelectric conversion device and method of producing the same |
KR1020097013316A KR101087351B1 (ko) | 2006-12-25 | 2007-11-15 | 광전변환 장치 및 그 제조 방법 |
CN2007800475244A CN101569017B (zh) | 2006-12-25 | 2007-11-15 | 光电转换装置及其制造方法 |
EP07831938.1A EP2099076A4 (en) | 2006-12-25 | 2007-11-15 | PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREFOR |
JP2008550993A JPWO2008078471A1 (ja) | 2006-12-25 | 2007-11-15 | 光電変換装置及びその製造方法 |
US13/613,438 US20130017645A1 (en) | 2006-12-25 | 2012-09-13 | Photoelectric conversion device and method of producing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-347896 | 2006-12-25 | ||
JP2006347896 | 2006-12-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/613,438 Division US20130017645A1 (en) | 2006-12-25 | 2012-09-13 | Photoelectric conversion device and method of producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008078471A1 true WO2008078471A1 (ja) | 2008-07-03 |
Family
ID=39562264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/072208 WO2008078471A1 (ja) | 2006-12-25 | 2007-11-15 | 光電変換装置及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8288647B2 (ja) |
EP (1) | EP2099076A4 (ja) |
JP (1) | JPWO2008078471A1 (ja) |
KR (1) | KR101087351B1 (ja) |
CN (1) | CN101569017B (ja) |
WO (1) | WO2008078471A1 (ja) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010034411A (ja) * | 2008-07-30 | 2010-02-12 | Mitsubishi Electric Corp | 薄膜太陽電池およびその製造方法 |
WO2010050034A1 (ja) * | 2008-10-30 | 2010-05-06 | 三菱重工業株式会社 | 光電変換装置及び光電変換装置の製造方法 |
US20100275996A1 (en) * | 2007-11-30 | 2010-11-04 | Kaneka Corporation | Silicon-based thin-film photoelectric conversion device |
CN101924149A (zh) * | 2009-06-12 | 2010-12-22 | 韩国铁钢株式会社 | 光电装置及其制造方法 |
WO2011114551A1 (ja) * | 2010-03-18 | 2011-09-22 | 富士電機ホールディングス株式会社 | 太陽電池及びその製造方法 |
WO2011125251A1 (ja) * | 2010-04-09 | 2011-10-13 | 三菱電機株式会社 | 薄膜シリコン太陽電池の製造方法および製造装置 |
WO2012066941A1 (ja) * | 2010-11-16 | 2012-05-24 | シャープ株式会社 | 半導体装置の製造方法 |
JP2012523714A (ja) * | 2009-09-02 | 2012-10-04 | エルジー エレクトロニクス インコーポレイティド | 太陽電池 |
WO2012144420A1 (ja) * | 2011-04-22 | 2012-10-26 | 国立大学法人東京工業大学 | シリコン太陽電池およびその製造方法 |
CN103887357A (zh) * | 2012-12-21 | 2014-06-25 | Lg电子株式会社 | 太阳能电池及其制造方法 |
US8859889B2 (en) | 2010-04-20 | 2014-10-14 | Kyocera Corporation | Solar cell elements and solar cell module using same |
CN102473776B (zh) * | 2009-08-19 | 2014-12-03 | Lg电子株式会社 | 太阳能电池 |
EP2219230A3 (en) * | 2009-02-17 | 2014-12-31 | Korean Institute of Industrial Technology | Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition |
CN106784037A (zh) * | 2016-12-29 | 2017-05-31 | 官成钢 | 一种GaAs材料的纵向多结单色光电池及其电池阵列 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI373851B (en) * | 2008-11-25 | 2012-10-01 | Nexpower Technology Corp | Stacked-layered thin film solar cell and manufacturing method thereof |
JP4902779B2 (ja) * | 2009-11-30 | 2012-03-21 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
JP4940290B2 (ja) * | 2009-12-15 | 2012-05-30 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
EP2541614A4 (en) * | 2010-02-24 | 2015-11-04 | Kaneka Corp | THIN-FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING THE SAME |
KR101084984B1 (ko) * | 2010-03-15 | 2011-11-21 | 한국철강 주식회사 | 플렉서블 기판 또는 인플렉서블 기판을 포함하는 광기전력 장치의 제조 방법 |
DE102010053382A1 (de) * | 2010-12-03 | 2012-06-06 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer Solarzelle und eine Solarzelle |
TWI488322B (zh) * | 2010-12-27 | 2015-06-11 | Nexpower Technology Corp | 薄膜太陽能電池堆疊製造方法及其薄膜太陽能電池 |
US20120211069A1 (en) * | 2011-02-23 | 2012-08-23 | Electronics And Telecommunications Research Institute | Thin-film solar cells and methods of fabricating the same |
JP5927027B2 (ja) | 2011-10-05 | 2016-05-25 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
KR101453967B1 (ko) * | 2012-02-20 | 2014-10-29 | 고려대학교 산학협력단 | 다중 밴드갭 적층형 태양전지 및 다중 밴드갭 적층형 태양전지 형성 방법 |
US20140020743A1 (en) * | 2012-07-23 | 2014-01-23 | E I Du Pont De Nemours And Company | Solar cell and manufacturing method thereof |
KR102032449B1 (ko) * | 2013-01-07 | 2019-10-15 | 삼성전자주식회사 | 이미지 표시 방법 및 휴대 단말 |
CN105679863A (zh) * | 2016-04-08 | 2016-06-15 | 陈立新 | 一种基于硅纳米结构的光伏电池 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62170478A (ja) * | 1986-01-22 | 1987-07-27 | Fujitsu Ltd | アモルフアスシリコン膜の製造方法 |
JPS63289968A (ja) * | 1987-05-22 | 1988-11-28 | Hitachi Ltd | 非晶質太陽電池の製造方法 |
JPS6471182A (en) * | 1987-08-19 | 1989-03-16 | Energy Conversion Devices Inc | Thin film solar cell containing spatially modulated intrinthic layer |
JPH04188774A (ja) * | 1990-11-22 | 1992-07-07 | Canon Inc | 光起電力素子 |
JPH07183562A (ja) * | 1993-12-24 | 1995-07-21 | Canon Inc | 非単結晶半導体薄膜の製造方法及び半導体装置 |
JPH10125944A (ja) * | 1996-08-28 | 1998-05-15 | Canon Inc | 光起電力素子 |
JPH10294484A (ja) * | 1997-02-19 | 1998-11-04 | Canon Inc | 光起電力素子、光電変換素子、光起電力素子の製造方法及び光電変換素子の製造方法 |
JPH1187742A (ja) | 1997-09-01 | 1999-03-30 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置 |
JPH11266030A (ja) * | 1998-03-17 | 1999-09-28 | Canon Inc | 半導体素子、及び半導体素子の製造方法 |
JPH11274530A (ja) * | 1998-01-23 | 1999-10-08 | Canon Inc | 光起電力素子 |
JP2000188413A (ja) * | 1998-12-22 | 2000-07-04 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置とその製造方法 |
JP2000349321A (ja) * | 1999-06-09 | 2000-12-15 | Fuji Electric Co Ltd | 薄膜太陽電池とその製造方法 |
JP2001332749A (ja) * | 2000-05-23 | 2001-11-30 | Canon Inc | 半導体薄膜の形成方法およびアモルファスシリコン太陽電池素子 |
JP2002198551A (ja) * | 2000-12-27 | 2002-07-12 | Mitsubishi Heavy Ind Ltd | 光電変換素子とそれを用いた光電変換装置及び光電変換素子の製造方法 |
JP2005142358A (ja) | 2003-11-06 | 2005-06-02 | Sharp Corp | 太陽電池 |
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US4471155A (en) * | 1983-04-15 | 1984-09-11 | Energy Conversion Devices, Inc. | Narrow band gap photovoltaic devices with enhanced open circuit voltage |
JP4208281B2 (ja) * | 1998-02-26 | 2009-01-14 | キヤノン株式会社 | 積層型光起電力素子 |
JP2001028453A (ja) * | 1999-07-14 | 2001-01-30 | Canon Inc | 光起電力素子及びその製造方法、建築材料並びに発電装置 |
JP2001267611A (ja) * | 2000-01-13 | 2001-09-28 | Sharp Corp | 薄膜太陽電池及びその製造方法 |
JP2004165394A (ja) * | 2002-11-13 | 2004-06-10 | Canon Inc | 積層型光起電力素子 |
US7902049B2 (en) * | 2004-01-27 | 2011-03-08 | United Solar Ovonic Llc | Method for depositing high-quality microcrystalline semiconductor materials |
US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
-
2007
- 2007-11-15 JP JP2008550993A patent/JPWO2008078471A1/ja active Pending
- 2007-11-15 KR KR1020097013316A patent/KR101087351B1/ko not_active IP Right Cessation
- 2007-11-15 WO PCT/JP2007/072208 patent/WO2008078471A1/ja active Application Filing
- 2007-11-15 EP EP07831938.1A patent/EP2099076A4/en not_active Withdrawn
- 2007-11-15 CN CN2007800475244A patent/CN101569017B/zh not_active Expired - Fee Related
- 2007-11-15 US US12/520,918 patent/US8288647B2/en not_active Expired - Fee Related
-
2012
- 2012-09-13 US US13/613,438 patent/US20130017645A1/en not_active Abandoned
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS62170478A (ja) * | 1986-01-22 | 1987-07-27 | Fujitsu Ltd | アモルフアスシリコン膜の製造方法 |
JPS63289968A (ja) * | 1987-05-22 | 1988-11-28 | Hitachi Ltd | 非晶質太陽電池の製造方法 |
JPS6471182A (en) * | 1987-08-19 | 1989-03-16 | Energy Conversion Devices Inc | Thin film solar cell containing spatially modulated intrinthic layer |
JPH04188774A (ja) * | 1990-11-22 | 1992-07-07 | Canon Inc | 光起電力素子 |
JPH07183562A (ja) * | 1993-12-24 | 1995-07-21 | Canon Inc | 非単結晶半導体薄膜の製造方法及び半導体装置 |
JPH10125944A (ja) * | 1996-08-28 | 1998-05-15 | Canon Inc | 光起電力素子 |
JPH10294484A (ja) * | 1997-02-19 | 1998-11-04 | Canon Inc | 光起電力素子、光電変換素子、光起電力素子の製造方法及び光電変換素子の製造方法 |
JPH1187742A (ja) | 1997-09-01 | 1999-03-30 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置 |
JPH11274530A (ja) * | 1998-01-23 | 1999-10-08 | Canon Inc | 光起電力素子 |
JPH11266030A (ja) * | 1998-03-17 | 1999-09-28 | Canon Inc | 半導体素子、及び半導体素子の製造方法 |
JP2000188413A (ja) * | 1998-12-22 | 2000-07-04 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置とその製造方法 |
JP2000349321A (ja) * | 1999-06-09 | 2000-12-15 | Fuji Electric Co Ltd | 薄膜太陽電池とその製造方法 |
JP2001332749A (ja) * | 2000-05-23 | 2001-11-30 | Canon Inc | 半導体薄膜の形成方法およびアモルファスシリコン太陽電池素子 |
JP2002198551A (ja) * | 2000-12-27 | 2002-07-12 | Mitsubishi Heavy Ind Ltd | 光電変換素子とそれを用いた光電変換装置及び光電変換素子の製造方法 |
JP2005142358A (ja) | 2003-11-06 | 2005-06-02 | Sharp Corp | 太陽電池 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2099076A4 * |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100275996A1 (en) * | 2007-11-30 | 2010-11-04 | Kaneka Corporation | Silicon-based thin-film photoelectric conversion device |
JP2010034411A (ja) * | 2008-07-30 | 2010-02-12 | Mitsubishi Electric Corp | 薄膜太陽電池およびその製造方法 |
JP5174179B2 (ja) * | 2008-10-30 | 2013-04-03 | 三菱重工業株式会社 | 光電変換装置の製造方法 |
WO2010050034A1 (ja) * | 2008-10-30 | 2010-05-06 | 三菱重工業株式会社 | 光電変換装置及び光電変換装置の製造方法 |
EP2219230A3 (en) * | 2009-02-17 | 2014-12-31 | Korean Institute of Industrial Technology | Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition |
CN101924149A (zh) * | 2009-06-12 | 2010-12-22 | 韩国铁钢株式会社 | 光电装置及其制造方法 |
US8642115B2 (en) | 2009-06-12 | 2014-02-04 | Kisco | Photovoltaic device and manufacturing method thereof |
CN102473776B (zh) * | 2009-08-19 | 2014-12-03 | Lg电子株式会社 | 太阳能电池 |
JP2012523714A (ja) * | 2009-09-02 | 2012-10-04 | エルジー エレクトロニクス インコーポレイティド | 太陽電池 |
WO2011114551A1 (ja) * | 2010-03-18 | 2011-09-22 | 富士電機ホールディングス株式会社 | 太陽電池及びその製造方法 |
JPWO2011114551A1 (ja) * | 2010-03-18 | 2013-06-27 | 富士電機株式会社 | 太陽電池及びその製造方法 |
JP5220239B2 (ja) * | 2010-04-09 | 2013-06-26 | 三菱電機株式会社 | 薄膜シリコン太陽電池の製造方法および製造装置 |
WO2011125251A1 (ja) * | 2010-04-09 | 2011-10-13 | 三菱電機株式会社 | 薄膜シリコン太陽電池の製造方法および製造装置 |
US8859889B2 (en) | 2010-04-20 | 2014-10-14 | Kyocera Corporation | Solar cell elements and solar cell module using same |
WO2012066941A1 (ja) * | 2010-11-16 | 2012-05-24 | シャープ株式会社 | 半導体装置の製造方法 |
WO2012144420A1 (ja) * | 2011-04-22 | 2012-10-26 | 国立大学法人東京工業大学 | シリコン太陽電池およびその製造方法 |
CN103887357A (zh) * | 2012-12-21 | 2014-06-25 | Lg电子株式会社 | 太阳能电池及其制造方法 |
CN106784037A (zh) * | 2016-12-29 | 2017-05-31 | 官成钢 | 一种GaAs材料的纵向多结单色光电池及其电池阵列 |
Also Published As
Publication number | Publication date |
---|---|
US8288647B2 (en) | 2012-10-16 |
US20130017645A1 (en) | 2013-01-17 |
CN101569017A (zh) | 2009-10-28 |
KR101087351B1 (ko) | 2011-11-25 |
JPWO2008078471A1 (ja) | 2010-04-15 |
US20100024878A1 (en) | 2010-02-04 |
EP2099076A4 (en) | 2013-07-03 |
CN101569017B (zh) | 2011-11-30 |
KR20090085132A (ko) | 2009-08-06 |
EP2099076A1 (en) | 2009-09-09 |
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