WO2010080446A3 - Microcrystalline silicon alloys for thin film and wafer based solar applications - Google Patents

Microcrystalline silicon alloys for thin film and wafer based solar applications Download PDF

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Publication number
WO2010080446A3
WO2010080446A3 PCT/US2009/068305 US2009068305W WO2010080446A3 WO 2010080446 A3 WO2010080446 A3 WO 2010080446A3 US 2009068305 W US2009068305 W US 2009068305W WO 2010080446 A3 WO2010080446 A3 WO 2010080446A3
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WO
WIPO (PCT)
Prior art keywords
thin film
microcrystalline silicon
based solar
layers
wafer based
Prior art date
Application number
PCT/US2009/068305
Other languages
French (fr)
Other versions
WO2010080446A2 (en
Inventor
Shuran Sheng
Yongkee Chae
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2011542409A priority Critical patent/JP2012513125A/en
Priority to EP09837898.7A priority patent/EP2359411A4/en
Priority to CN2009801512659A priority patent/CN102272950A/en
Publication of WO2010080446A2 publication Critical patent/WO2010080446A2/en
Publication of WO2010080446A3 publication Critical patent/WO2010080446A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as light-trapping enhancement layers and charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap and high conductivity.
PCT/US2009/068305 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin film and wafer based solar applications WO2010080446A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011542409A JP2012513125A (en) 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin film and wafer based solar applications
EP09837898.7A EP2359411A4 (en) 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin film and wafer based solar applications
CN2009801512659A CN102272950A (en) 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin film and wafer based solar applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13939008P 2008-12-19 2008-12-19
US61/139,390 2008-12-19

Publications (2)

Publication Number Publication Date
WO2010080446A2 WO2010080446A2 (en) 2010-07-15
WO2010080446A3 true WO2010080446A3 (en) 2010-10-28

Family

ID=42317062

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/068305 WO2010080446A2 (en) 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin film and wafer based solar applications

Country Status (6)

Country Link
EP (1) EP2359411A4 (en)
JP (1) JP2012513125A (en)
KR (1) KR20110106889A (en)
CN (1) CN102272950A (en)
TW (1) TW201029208A (en)
WO (1) WO2010080446A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2426737A1 (en) * 2010-09-03 2012-03-07 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
EP2439792A1 (en) * 2010-10-05 2012-04-11 Applied Materials, Inc. Thin-film solar cell fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
JP2012114296A (en) * 2010-11-25 2012-06-14 Mitsubishi Electric Corp Thin-film solar cell and method of manufacturing the same
US8088990B1 (en) * 2011-05-27 2012-01-03 Auria Solar Co., Ltd. Color building-integrated photovoltaic (BIPV) panel
TWI473281B (en) * 2011-04-01 2015-02-11 Nexpower Technology Corp Thin film solar cell structure
TW201246588A (en) * 2011-05-06 2012-11-16 Auria Solar Co Ltd Solar cell module and manufacturing method thereof
EP2533318A1 (en) * 2011-06-08 2012-12-12 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Thin film solar cell module and greenhouse provided with the same
DE102011081655A1 (en) * 2011-08-26 2013-02-28 Robert Bosch Gmbh Thin film solar cell
WO2013106439A1 (en) * 2012-01-13 2013-07-18 Applied Materials, Inc. High work-function buffer layers for silicon-based photovoltaic devices
CN104272473A (en) * 2012-05-10 2015-01-07 Tel太阳能公司 Silicon-based solar cells with improved resistance to light-induced degradation
TWI484076B (en) * 2012-07-20 2015-05-11 Sino American Silicon Prod Inc Improved process for solar wafer and solar wafer
KR20150078549A (en) * 2013-12-31 2015-07-08 한국과학기술원 Apparatus for manufacturing integrated thin film solar cell
US10192717B2 (en) * 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
JP2017143103A (en) * 2016-02-08 2017-08-17 本田技研工業株式会社 Power generation battery
CN112018207B (en) * 2020-08-14 2023-02-03 隆基绿能科技股份有限公司 Laminated solar cell and preparation method thereof

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2005045129A (en) * 2003-07-24 2005-02-17 Kaneka Corp Stacked photoelectric converter device and its manufacturing method
JP2008060605A (en) * 2007-11-06 2008-03-13 Kaneka Corp Stacked photoelectric converter
JP2008181965A (en) * 2007-01-23 2008-08-07 Sharp Corp Laminated optoelectric converter and its fabrication process

Family Cites Families (2)

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Publication number Priority date Publication date Assignee Title
US7189917B2 (en) * 2003-03-26 2007-03-13 Canon Kabushiki Kaisha Stacked photovoltaic device
JP2009231505A (en) * 2008-03-21 2009-10-08 Sanyo Electric Co Ltd Solar battery

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045129A (en) * 2003-07-24 2005-02-17 Kaneka Corp Stacked photoelectric converter device and its manufacturing method
JP2008181965A (en) * 2007-01-23 2008-08-07 Sharp Corp Laminated optoelectric converter and its fabrication process
JP2008060605A (en) * 2007-11-06 2008-03-13 Kaneka Corp Stacked photoelectric converter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2359411A4 *

Also Published As

Publication number Publication date
WO2010080446A2 (en) 2010-07-15
TW201029208A (en) 2010-08-01
EP2359411A4 (en) 2013-07-10
CN102272950A (en) 2011-12-07
JP2012513125A (en) 2012-06-07
EP2359411A2 (en) 2011-08-24
KR20110106889A (en) 2011-09-29

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