CN104272473A - Silicon-based solar cells with improved resistance to light-induced degradation - Google Patents

Silicon-based solar cells with improved resistance to light-induced degradation Download PDF

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Publication number
CN104272473A
CN104272473A CN201380024285.6A CN201380024285A CN104272473A CN 104272473 A CN104272473 A CN 104272473A CN 201380024285 A CN201380024285 A CN 201380024285A CN 104272473 A CN104272473 A CN 104272473A
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doped
semiconductor layer
layer
band gap
silicon
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沙维尔·马尔顿
丹尼尔·博雷洛
斯特凡诺·贝纳利
约翰内斯·迈耶
乌尔里希·克罗尔
玛丽安娜·费乔鲁-莫拉留
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TEL Solar AG
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TEL Solar AG
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/548—Amorphous silicon PV cells

Abstract

Solar devices with high resistance to light-induced degradation are described. A wide optical bandgap interface layer positioned between a p-doped semiconductor layer and an intrinsic semiconductor layer is made resistant to light-induced degradation through treatment with a hydrogen-containing plasma. In one embodiment, a p-i-n structure is formed with the interface layer at the p/i interface. Optionally, an additional interface layer treated with a hydrogen-containing plasma is formed between the intrinsic layer and the n-doped layer. Alternatively, a hydrogen-containing plasma is used to treat an upper portion of the intrinsic layer prior to deposition of the n-doped semiconductor layer. The interface layer is also applicable to-multi-junction solar cells with plural p-i-n structures. The p-doped and n-doped layers can optionally include sublayers of different compositions and different morphologies (e.g., microcrystalline or amorphous). The overall structure shows both an increased stability with respect to light-induced degradation and an improved performance level.

Description

There is the silica-based solar cell of the anti-light-induced degradation of raising
The cross reference of related application
This application claims the priority of No. 61/645121st, the U.S. Provisional Patent Application that on May 10th, 2012 submits to, by introducing, its disclosure being incorporated to herein.
Technical field
The present invention relates to the solar cell of improvement, more specifically, relate to the thin wide optical band gap interfacial film owing to being arranged on one or more position in solar battery structure and there is the solar cell of the improvement of the anti-light-induced degradation of enhancing.
Background technology
In order to manufacture High-efficiency silicon based thin film solar cell, be starved of high open circuit voltage (Voc), the high magnitude of current and long-time stability.In these solar cells, one or more p-i-n (or, alternately, n-i-p) structure is formed and makes the photon from incident light source be converted to the basis of electromotive force.But long-time stability are continued to be exposed to this incident light source to be affected.A result of this exposure is the light-induced degradation of solar cell.Decline can be measured by the fill factor, curve factor (fill factor) such as reduced, and above-mentioned fill factor, curve factor is the maximum ratio obtaining power and open circuit voltage and short circuit current product.
Attempt by inserting during device manufacture especially for make the dopant between the doped layer of p-i-n junction structure and undoped layer spread light-induced degradation that minimized barrier layer reduces solar cell.United States Patent (USP) the 8th, 252, No. 624 barrier layers (a-SiC:H) manufactured between p doped silicon layer and intrinsic silicon layer containing non-crystal silicon carbon.Particularly, the material with Si-C key is described to catch boron atom with the adjacent intrinsic silicon layer of preventing pollution.Although but a-SiC:H buffer body is functional, these layers stand light-induced degradation (Staebler-Wronski effect, SWE).This is the metastable defects of the enhancing caused by combined carbon.Decline/the level of stability of a-SiC:H layer is directly related with the concentration of carbon.
Propose while maintaining long-time stability and improved V oCother replacement schemes.No. 2011/0308583rd, U.S. Patent Publication describes the floor being formed between amorphous p doped silicon layer and intrinsic silicon layer and contain nanocrystal silicon.This layer can by depositing nano crystal layer or by a part for amorphous p doped silicon layer is transformed into nanocrystalline material to be formed.Although disclosed application describes each layer to V oCimpact, but it does not solve the problem of long-time stability/light-induced degradation.
In the paper of R.Platz, the mechanism utilizing barrier layer to strengthen Voc " for the band inclined (band – offset) at the conduction band edge place between broad-band gap resilient coating and intrinsic layer (i layer) prevents electrons spread to be back to p layer and carries out compound, but makes electron drift to n layer." the paper suggestion of Platz be used in highly diluted condition under the thin amorphous silicon layer (a-Si:H) that deposits between p doped layer and intrinsic layer improve the V of resulting device oC.But amorphous silicon hydride also stands light-induced degradation (SWE) and the amorphous silicon layer of advising can not be increased in performance during whole solar battery life.
Thus need the material of the improvement of anti-light-induced degradation in the art, thus guarantee the solar cell properties of raising.
Summary of the invention
The invention provides a kind of solar energy equipment with more high resistance light-induced degradation, ensure that augmented performance level.The invention provides a kind of new molded breadth optical band gap interfacial film by hydrogen-plasma treatment with the anti-light-induced degradation of raising.
In one embodiment, a kind of method that manufacture has the solar cell of the anti-light-induced degradation of raising is described.One or more p doping semiconductor layer is deposited on transparency carrier and electrode.The sublayer that described p doped layer comprises following material by least one forms: p doped amorphous silicon, p doped amorphous silicon carbon, p doped amorphous silicon oxygen, p doped microcrystalline silicon, p doped microcrystalline silane, p doped microcrystalline silicon-carbon or p doped microcrystalline silica.
On described p doped layer, form wide optical band gap interfacial film.This wide optical ribbon gap layer is made up of intrinsic hydrogenated amorphous silicon film in fact.With this film of hydrogen plasma process, produce anti-light-induced degradation film.
Siliceous intrinsic semiconductor layer is deposited on wide optical band gap interfacial film.One or more n doping semiconductor layer is deposited on intrinsic semiconductor layer.The sublayer that described n doped layer comprises following material by least one forms: n doped amorphous silicon, n doped amorphous silicon carbon, n doped amorphous silicon oxygen, n doped microcrystalline silicon, n doped microcrystalline silane, n doped microcrystalline silicon-carbon or n doped microcrystalline silica.
At least another electrode layer is formed on described n doped layer.
The present invention find in the series connection with multiple p-i-n junction structure or multijunction solar cell other application, some solar cells in above-mentioned solar cell based on amorphous semiconductor other solar cells based on crystallite semiconductor.
Accompanying drawing explanation
Fig. 1 schematically shows the cross-sectional view of the amorphous silicon based solar battery according to one embodiment of the invention.
Fig. 2 schematically shows the cross-sectional view with the series-connected solar cells of multiple p-i-n junction structure according to another embodiment of the present invention.
Fig. 3 is amorphous silicon, figure through the amorphous silicon of hydrogen process and the optical band gap of non-crystal silicon carbon mixture.
Fig. 4 illustrates the absorption coefficient-band-gap energy of wide optical band gap material through hydrogen process and undressed wide optical band gap material.
Embodiment
Definition
" process " in meaning of the present invention comprises any chemical action, physical action or the mechanism that act on substrate.
" substrate " in meaning of the present invention is component, parts or workpiece pending in processing.Substrate includes but not limited to have rectangle, square or round-shaped smooth, panel component.In preferred embodiments, the present invention processes size >1m in fact 2planar substrates, such as thin glass plate.
" vacuum processing or vacuum flush system or equipment " comprises at least for the shell for the treatment of substrate under lower than the pressure of environment atmospheric pressure.
" CVD " chemical vapour deposition (CVD) is the known technology making it possible to sedimentary deposit on heated substrates.Conventional liquid or gaseous precursor material are supplied to treatment system, and described in above-mentioned treatment system, the thermal response of precursor causes the deposition of described layer.
" TCO " represents transparent conductive oxide, and thus " tco layer " is transparency conducting layer.
In this disclosure term " layer ", " coating ", " deposit " and " film " can mutually alternatively for the film of deposition in vacuum treatment equipment, above-mentioned vacuum treatment equipment can be CVD, LPCVD, plasma enhanced CVD (PECVD) or PVD (physical vapour deposition (PVD)).
" solar cell " or " photovoltaic cell (PV battery) " is electric components, light (being sunlight substantially) can be made directly to change electric energy into by means of photoelectric effect.
" thin-film solar cells " is being included at least one p-i-n junction be clipped in the middle of two electrodes or electrode layer on supporting substrates in general sense, and this p-i-n junction is set up by thin film deposition semiconducting compound.P-i-n junction or film photoelectric converting unit comprise the intrinsic semiconductor compound layer be clipped between p doped semiconductor compound layer and n doped semiconductor compound layer.Layer mentioned by term " film " represents is deposited as thin layer or film by the technique of such as PECVD, CVD, PVD or sputtering.It is 10 μm or less layer that thin layer means in fact thickness.
Optical band gap: optical band gap (E_Tauc) is the band gap using optical transmission and reflection and Tauc curve to record.Optical band gap represents with electronvolt usually, wherein marks Tauc and represents that optical band gap is recorded by optical technology.
" wide optical band gap boundary material " according to the present invention is greater than the semiconductor layer of the optical band gap of the intrinsic noncrystal semiconductor layer in identical solar battery apparatus for optical band gap.For the amorphous silicon boundary material by hydrogen plasma process of the present invention, wide optical band gap (E_Tauc) is greater than about 1.75eV, and is more particularly greater than about 1.78eV.Notice that the intrinsic amorphous silicon being used for solar cell of the present invention has the optical band gap (E_Tauc) of magnitude at 1.7eV, and intrinsic crystal silicon have the optical band gap (E_Tauc) of magnitude at 1.1eV.
Get back to accompanying drawing particularly, Fig. 1 illustrates the cross-sectional view according to solar cell 100 of the present invention.The transparency carrier 10 with TCO electrode layer 20 arranges or is formed in vacuum flush system.Usual TCO electrode layer comprises SnO 2and/or ZnO or other known transparent conductive oxides such as indium tin oxide.
Usually p doping semiconductor layer 30 is deposited by a kind of chemical vapour deposition (CVD) (such as plasma activated chemical vapour deposition) on TCO electrode layer 20.As used in this article, term " on " when refer to the second layer be arranged on ground floor " on " time comprise the following two kinds situation: the situation that ground floor and the second layer directly contact and be provided with the situation in one or more intermediate layer between ground floor and the second layer.In addition, although Fig. 1 illustrates the p-i-n junction structure that the wherein p doped layer usually on opaque substrate first deposits, the present invention can be applicable to the n-i-p structure that wherein n doped layer first deposits equally.
In an exemplary embodiment, p doping semiconductor layer 30 is siliceous amorphous layer at least partially.But, in p doping semiconductor layer 30, other also can be used to contain silicon semiconductor layer.These include but not limited to p doped silicon germanium mixture, amorphous Si:C, amorphous SiOx, Germanium carbon mixture containing silicon semiconductor layer and are used in other the known silica-base materials in solar cell application.P dopant is generally boron, although can select other dopants based on the expectation electrical property of layer.
P doped layer needs not be single composition or single form.That is, p doping semiconductor layer can comprise the sublayer of one or more different composition and form.Particularly, can deposit the first sublayer of other p doped microcrystalline layers comprising p doped microcrystalline silicon (μ c-Si) or p doped microcrystalline silane (μ c-Si:H) or comprise silicon, be one or more p doped layer comprising amorphous silicon (comprising amorphous Si:C as above, amorphous SiOx, Germanium carbon mixture etc.) subsequently.
Wide optical band gap interfacial film 40 is deposited on p doping semiconductor layer 30.Interfacial film is formed by the intrinsic hydrogenated amorphous silicon of thin layer of 5 nanometer to 20 nanometer scale.May be used for forming wide optical band gap interfacial film from the plasma enhanced chemical vapor deposition carried out containing silicon precursor example (such as silane) and hydrogen.Plasma enhanced chemical vapor deposition is used to be favourable in following: sedimentary condition can be controlled with selective hydrogenation level, and the optical property of selective membrane therefrom.Note carbon not being included in wide optical band gap interfacial film 40 because carbon demonstrates Staebler-Wronski effect.Except amorphous silicon, the wide optical property of optical band gap interfacial film 40 of not appreciable impact and the other materials of barrier properties can also be comprised alternatively.Particularly, when not affecting material monolithic character, material can doped with boron slightly alternatively.Also considering to add oxygen makes film stronger and show wide optical band gap to the decline resistance based on light.Particularly, being deposited on of wide optical band gap interfacial film does not use any carbonaceous gas (such as CH 4or other hydrocarbon gas) when carries out.Therefore, wide optical band gap interfacial film 40 not carbon containing in fact.As used in this article, term " in fact not carbon containing " means any level of carbon level lower than the optical property or electrical property that can affect layer.
In order to significantly increase the anti-light-induced degradation of wide optical band gap interfacial film 40, deposited film carries out hydrogeneous plasma treatment.The time period of about 120 seconds to 600 seconds is carried out in this process usually.When not by theoretical restriction, assuming that broad-band gap a-Si:H main manifestations goes out less defect (compared with the layer of carbon containing) and the stability of the raising for SWE, and the process of supposition hydrogen plasma changes the band gap of layer.In the vision research of layer, as seen in Fig. 4 of the wide optical band gap material of hydrogen process and the absorption coefficient-band-gap energy of undressed wide optical band gap material illustrating, hydrogen plasma process makes the bright color of layer.
The intrinsic layer 50 of amorphous semiconductor material is deposited on wide optical band gap interfacial film 40.The same with p doping semiconductor layer 30, intrinsic layer 50 can for silica-based and deposited by chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition.Another layer wide optical band gap interfacial film 40 with plasma treatment can be formed alternatively on intrinsic layer 50.Alternately, the upper surface of intrinsic layer 50 can be processed with hydrogen plasma process as above.In some embodiments maybe advantageously, in intrinsic layer 50, multiple wide optical band gap interfacial film 40 is inserted to improve the anti-light-induced degradation of whole device.
N doping semiconductor layer 60 is formed on intrinsic layer 50 (and optionally other boundary layer).The same with p doped layer, n doped layer can comprise the sublayer of one or more different composition and/or form.Particularly, can be formed comprise n doped amorphous silicon, n adulterate amorphous Si:C, n adulterate amorphous SiOx, n doped silicon germanium carbon mix or other comprise the first sublayer of other n doped layers of amorphous silicon.The n doped microcrystalline layer that n doped microcrystalline silicon (μ c-Si) or n doped microcrystalline silane (μ c-Si:H) or other comprise silicon is deposited alternatively on this first sublayer.Although usually select phosphorus to be n dopant, other dopant materials can be selected based on the electrical property expected.
On n doped layer, form electrode layer 70 and reflective substrate electrode 80 or electrode layer 70 and reflective substrate electrode 80 are engaged to n doped layer.
Fig. 2 illustrates the series-connected solar cells structure with two p-i-n junction structures.Top p-i-n junction structure is substantially similar to the device shown in Fig. 1.Between the first p-i-n junction structure and the second p-i-n junction structure, be provided with wavelength selective reflectors 200 get back in amorphous p-i-n junction structure to make a part of selective reflecting of incident light.Note being reflected back toward on incident light the impact of the stability of increase that selection that the part in the first p-i-n junction structure carries out will apply by boundary layer 40.If amorphous p-i-n junction structure has the photic stability of raising, then together with the thickness of wavelength selective reflectors 200, tandem arrangement goes for improving stabilization efficiency further.
In the second p-i-n junction structure, layer 230, layer 250 and layer 260 are respectively the p doped microcrystalline silicon, intrinsic micro crystal silicon and the n doped microcrystalline silicon that are deposited by plasma enhanced CVD.
Be that the second p-i-n junction structure arranges electrode layer 270 and reflector/reflection electrode 280.Notice that the structure of Fig. 2 is sometimes referred to as " amorphous/crystallite stacking (micromorph) " structure, reason is that this structure combines microcrystalline silicon p-i-n and the silica-based p-i-n of amorphous.Because microcrystal silicon and amorphous silicon absorb the zones of different of incident light spectrum, so by utilizing the major part of available spectrum to make series connection p-i-n junction structure add the whole efficiency of device.
Certainly it being understood that new molded breadth optical band gap interfacial film can be used in the various solar cells comprising various layer structure, and above device is only representative configuration and non-limiting embodiments.Such solar cell comprises multijunction solar cell, series-connected cell, the single junction cell of various thickness and form.
Embodiment
1. the measurement of optical band gap:
In order to characterize the interfacial film of invention of the present invention, prepared multiple stack, this multilayer has the interfacial film of 6 thin about 12nm.The after-applied hydrogen plasma of the film that each 12nm in deposit multilayer is thick.The multilayer of about 70nm is more suitable for reliable sign than the individual layer of independent thin 15nm to 20nm.
Have studied the following process conditions for layer:
CH 4=50 → there is CH 4when a-SiC:H layer, without H after deposition 2plasma;
CH 4=0 → there is no CH 4when a-Si:H layer, without H after deposition 2plasma;
H 2.v1 → there is no CH 4when a-Si:H layer, 0.8 millibar of lower H of 100 seconds 2plasma;
H 2.v2 → there is no CH 4when a-Si:H layer, 2.5 millibars of lower H of 100 seconds 2plasma.
The results are shown in Fig. 3, Fig. 3 illustrates the optical band gap according to various composition and treatment conditions.Compared with a-SiC:H layer, there is no CH 4when layer there is lower optical band gap energy (lower E_Tauc), but there is extraordinary quality of materials (the low R factor).When applying hydrogen plasma after deposition, band-gap energy E_Tauc is increased to and is similar to for there being CH 4when the value of band-gap energy value that obtains of layer.Meanwhile, with there is no CH 4when layer compare, layer quality deterioration (that is, the R factor increase), but with have CH 4when layer compare it still significantly better (such as, for H 2.v2).
2. use equipment energy characteristic when wide optical band gap film to measure
A. single p-i-n junction structure
Summarize wide optical band gap interfacial film Fabrication parameter (typical gas flow, thickness, pressure, power density, the H of invention in Table 1 2plasma treatment).Vacuum system is PECVD R & DKAI M reactor.Interfacial film is contrasted with the barrier layer of the amorphous silicon/carbon (a-SiC:H) deposited by plasma enhanced chemical vapor deposition.
Table 1: be about 3000cm at substrate size 240.68MHz PECVD reactor in typical Fabrication parameter.
For the a-Si:H unijunction solar cell after initial condition and photo attenuation, illustrate in table 2 (series 1 and series 2) by using the beneficial effect of the wide optical band gap material of invention to fill factor, curve factor and other solar cell parameters various.
A-Si:H interfacial film-a-SiC:H interfacial film (series 1 and series 2) in table 2:a-Si:H unijunction p-i-n when hydrogen plasma
B. many p-i-n junction structures
For tandem-junction solar cell, the parameter shown in table 3 corresponds to following cascaded structure:
A-Si:H p-i-n junction structure: 250nm
Wavelength selectivity mirror: 70nm
Crystallite Si:H p-i-n:2000nm
The tandem-junction solar cell LPCVDZnO (about 1200nm) be deposited on healthy and free from worry (Corning) glass of veining goes up and is bottom restricted type.Silicon/carbon-coating and the hydrogen plasma process boundary layer of invention be arranged between p/i interface and i/n interface contrast.Two solar cells deposit in an identical manner respectively, operate, measure and decay.
Table 3 illustrates the solar cell parameter when film for the invention of amorphous of connecting/crystallite solar cell.Two batteries are all clearly shown that: for combining new molded breadth optical band gap interfacial film in solar cells (broad-band gap a-Si:H and be exposed to hydrogen plasma), better through the fill factor, curve factor value of overdamping.Due to V oCand J sCthere is identical grade, so the film of invention makes the stability of solar battery efficiency be improved.
Table 3: the a-Si:H interfacial film-a-SiC:H interfacial film (series 1) in string knot p-i-n solar cell when hydrogen plasma
3. form the change on the technological parameter of wide optical band gap film
Provide the various pecvd process parameters for the manufacture of wide optical band gap interfacial film in table 4.The RF power applied is 250 watts to 600 watts changes, and pressure is also 0.5 millibar to 4.0 millibars change simultaneously.Compared with reference layer, under higher position reason pressure (that is, 2.5 millibars but not 0.8 millibar), carry out H2 plasma treatment or carry out the H2 plasma treatment shorter processing time quality of materials that (50 seconds but not 100 seconds) can be improved and similar or lower band-gap energy.The quality of materials significantly improved under the reduction prepared on resilient coating period RF power causes identical band-gap energy.The combination of the H2 plasma that RF power lower during buffer layer deposition in addition and higher position are managed under pressure can obtain good individual layer result.
Table 4: for the formation of the technological parameter of wide optical band gap interfacial film
Although describe aforementioned invention relative to various embodiment, embodiment is not restrictive.Those skilled in the art will appreciate that a large amount of change programme and modification.Think that such change programme and modification comprise within the scope of the appended claims.

Claims (15)

1. formation has a method for the solar cell of the anti-light-induced degradation of raising, and described method comprises:
Transparency carrier is provided, described transparency carrier is formed the first electrode layer of electrically conducting transparent;
On described transparency carrier and electrode, deposit one or more p doping semiconductor layer, one or more p doped layer described comprises at least one sublayer comprising following material: p doped amorphous silicon, p doped amorphous silicon carbon, p doped amorphous silicon oxygen, p doped microcrystalline silicon, p doped microcrystalline silane, p doped microcrystalline silicon-carbon or p doped microcrystalline silica;
Described p doping semiconductor layer deposits the wide optical band gap interfacial film be made up of intrinsic hydrogenated amorphous silicon film in fact;
With optical band gap interfacial film wide described in hydrogen plasma process;
Siliceous intrinsic semiconductor layer is deposited on described wide optical band gap interfacial film;
On described intrinsic semiconductor layer, deposit one or more n doping semiconductor layer, one or more n doping semiconductor layer described comprises at least one sublayer comprising following material: n doped amorphous silicon, n doped amorphous silicon carbon, n doped amorphous silicon oxygen, n doped microcrystalline silicon, n doped microcrystalline silane, n doped microcrystalline silicon-carbon or n doped microcrystalline silica;
The second electrode is formed on described n doping semiconductor layer.
2. formation according to claim 1 has the method for the solar cell of the anti-light-induced degradation of raising, is also included in the second wide optical band gap interfacial film described intrinsic semiconductor layer depositing and is made up of intrinsic amorphous silicon film in fact; And
With the second wide optical band gap interfacial film described in hydrogen plasma process.
3. formation according to claim 1 and 2 has the method for the solar cell of the anti-light-induced degradation of raising, the intrinsic semiconductor layer deposited with hydrogen plasma process before being also included in the described n doping semiconductor layer of deposition.
4. there is according to formation described one of in aforementioned claim the method for the solar cell of the anti-light-induced degradation of raising, also comprise:
Wavelength selective reflectors is formed on described n doping semiconductor layer;
P-i-n semiconductor structure is formed on described wavelength selective reflectors;
Described second electrode is formed on described p-i-n semiconductor structure.
5. formation according to claim 4 has the method for the solar cell of the anti-light-induced degradation of raising, wherein forms described p-i-n semiconductor structure and comprises:
Form the p doped microcrystalline semiconductor layer containing microcrystal silicon;
The intrinsic microcrystalline semiconductor layer containing microcrystal silicon is formed on described p doped microcrystalline semiconductor layer;
The n doped microcrystalline semiconductor layer containing microcrystal silicon is formed in described intrinsic microcrystalline semiconductor layer.
6. formation according to claim 5 has the method for the solar cell of the anti-light-induced degradation of raising, is also included in the wide optical band gap interfacial film described p doped microcrystalline layer depositing and is made up of intrinsic amorphous silicon film in fact;
The described wide optical band gap interfacial film on described p doped microcrystalline layer is deposited on hydrogen plasma process.
7. according to method described one of in aforementioned claim, wherein, use the described process of described hydrogen plasma to carry out being enough to the time of the optics Tauc band gap producing 1.75eV or larger.
8., according to method described one of in aforementioned claim, wherein, carry out the deposition of described wide optical band gap interfacial film when not using any carbonaceous gas.
9., according to method described one of in aforementioned claim, wherein, described p doping semiconductor layer comprises p doped microcrystalline silicon sublayer and p doped amorphous silicon sublayer.
10., according to method described one of in aforementioned claim, wherein, described n doping semiconductor layer comprises n doped microcrystalline silicon sublayer and n doped amorphous silicon sublayer.
11. according to method described one of in aforementioned claim, is also included in the wide optical band gap interfacial film of deposition in described intrinsic semiconductor layer.
12. 1 kinds of solar cells with the anti-light-induced degradation of raising formed according to method described one of in aforementioned claim.
13. solar cells with the anti-light-induced degradation of raising according to claim 12, wherein, described wide optical band gap interfacial film not carbon containing in fact.
14. 1 kinds of silica-based solar cells with at least one p-i-n junction structure, a part at least one p-i-n junction structure described comprises amorphous silicon, and described battery is in fact the wide optical band gap interfacial film formed through the amorphous silicon of hydrogen plasma process of 1.75eV or larger by optics Tauc band gap.
15. silica-based solar cells according to claim 14, wherein, described wide optical band gap interfacial film not carbon containing in fact.
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