CN104272473A - 具有提高的抗光致衰退性的硅基太阳能电池 - Google Patents
具有提高的抗光致衰退性的硅基太阳能电池 Download PDFInfo
- Publication number
- CN104272473A CN104272473A CN201380024285.6A CN201380024285A CN104272473A CN 104272473 A CN104272473 A CN 104272473A CN 201380024285 A CN201380024285 A CN 201380024285A CN 104272473 A CN104272473 A CN 104272473A
- Authority
- CN
- China
- Prior art keywords
- doped
- semiconductor layer
- layer
- band gap
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015556 catabolic process Effects 0.000 title claims abstract description 26
- 238000006731 degradation reaction Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 20
- 229910052710 silicon Inorganic materials 0.000 title claims description 20
- 239000010703 silicon Substances 0.000 title claims description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 11
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 239000013081 microcrystal Substances 0.000 claims description 5
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 40
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KCFIHQSTJSCCBR-UHFFFAOYSA-N [C].[Ge] Chemical compound [C].[Ge] KCFIHQSTJSCCBR-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002707 nanocrystalline material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table including AIVBIV compounds or alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明描述了一种具有高的抗光致衰退性的太阳能装置。设置在p掺杂半导体层与本征半导体层之间的宽光学带隙界面层通过含氢等离子体处理而成为抗光致衰退的。在一个实施方案中,p-i-n结构形成为在p/i界面处具有界面层。可选地,在本征层与n掺杂层之间形成有经含氢等离子体处理的另外的界面层。可替代地,在沉积n掺杂半导体层之前使用含氢等离子体处理本征层的上部。界面层还可应用于具有多个p-i-n结构的多结太阳能电池。p掺杂层和n掺杂层可选地可以包括不同组成和不同形态(例如,微晶或非晶)的子层。整体结构既表现出对于光致衰退的增加的稳定性又表现出提高的性能水平。
Description
相关申请的交叉引用
本申请要求2012年5月10日提交的美国临时专利申请第61/645121号的优先权,通过引入将其公开内容并入本文。
技术领域
本发明涉及改进的太阳能电池,更具体地,涉及由于设置在太阳能电池结构内的一个或更多个位置处的薄的宽光学带隙界面膜而具有增强的抗光致衰退性的改进的太阳能电池。
背景技术
为了制造高效率硅基薄膜太阳能电池,非常需要高开路电压(Voc)、高电流量和长期稳定性。在这些太阳能电池中,一个或更多个p-i-n(或者,可替代地,n-i-p)结构形成使来自入射光源的光子转换为电动势的基础。然而,长期稳定性受持续暴露于该入射光源影响。该暴露的一个结果是太阳能电池的光致衰退。衰退可以通过例如减小的填充因子(fill factor)来度量,上述填充因子为最大可获得功率与开路电压和短路电流乘积的比。
已经尝试通过特别地在装置制造期间插入用于使p-i-n结构的掺杂层和未掺杂层之间的掺杂剂扩散最小化的阻挡层来减小太阳能电池的光致衰退。美国专利第8,252,624号在p掺杂硅层与本征硅层之间制造了含非晶硅碳的阻挡层(a-SiC:H)。具体地,具有Si-C键的材料被描述为捕获硼原子以防止污染相邻本征硅层。然而尽管a-SiC:H缓冲体性能良好,但是这些层经受光致衰退(Staebler-Wronski效应,SWE)。这是由于被结合的碳所引起的增强的亚稳缺陷。a-SiC:H层的衰退性/稳定性水平与碳的浓度直接相关。
已经提出了维持长期稳定性的同时提高VOC的其他替代方案。美国专利公开第2011/0308583号描述了在非晶p掺杂硅层与本征硅层之间形成含纳米晶硅的层。该层可以通过沉积纳米晶层或者通过将非晶p掺杂硅层的一部分转变成纳米晶材料来形成。尽管所公开的申请描述了各层对VOC的影响,但是其没有解决长期稳定性/光致衰退的问题。
在R.Platz的论文中,利用阻挡层增强Voc的机理“为宽带隙缓冲层与本征层(i层)之间的导带边缘处的带偏(band–offset)防止了电子扩散返回至p层并进行复合,而是使电子漂移至n层。”Platz的论文建议使用在高氢稀释条件下在p掺杂层与本征层之间沉积的薄非晶硅层(a-Si:H)来提高最终装置的VOC。然而,氢化非晶硅也经受光致衰退(SWE)而且所建议的非晶硅层将不会增加在整个太阳能电池寿命期间的性能。
因而在本领域中需要抗光致衰退的改进的材料,从而确保提高的太阳能电池性能。
发明内容
本发明提供了一种具有更高抗光致衰退性的太阳能装置,确保了提高的性能水平。本发明提供了一种通过含氢等离子处理而具有提高的抗光致衰退性的新型宽光学带隙界面膜。
在一个实施方案中,描述了一种制造具有提高的抗光致衰退性的太阳能电池的方法。在透明基板和电极之上沉积一个或更多个p掺杂半导体层。所述p掺杂层由至少一个包含如下物质的子层组成:p掺杂非晶硅、p掺杂非晶硅碳、p掺杂非晶硅氧、p掺杂微晶硅、p掺杂微晶氢化硅、p掺杂微晶硅碳或p掺杂微晶硅氧。
在所述p掺杂层之上,形成宽光学带隙界面膜。该宽光学带隙层实质上由本征氢化非晶硅膜组成。用氢等离子体处理该膜,产生抗光致衰退膜。
在宽光学带隙界面膜之上沉积含硅的本征半导体层。在本征半导体层之上沉积一个或更多个n掺杂半导体层。所述n掺杂层由至少一个包含如下物质的子层组成:n掺杂非晶硅、n掺杂非晶硅碳、n掺杂非晶硅氧、n掺杂微晶硅、n掺杂微晶氢化硅、n掺杂微晶硅碳或n掺杂微晶硅氧。
在所述n掺杂层之上形成至少又一电极层。
本发明发现在具有多个p-i-n结构的串联或多结太阳能电池中的其他应用,上述太阳能电池中的一些太阳能电池基于非晶半导体而其他太阳能电池基于微晶半导体。
附图说明
图1示意性示出根据本发明的一个实施方案的非晶硅基太阳能电池的横截面图。
图2示意性示出根据本发明的另一实施方案的具有多个p-i-n结构的串联太阳能电池的横截面图。
图3为非晶硅、经氢处理的非晶硅以及非晶硅碳混合物的光学带隙的图。
图4示出经氢处理的宽光学带隙材料和未经处理的宽光学带隙材料的吸收系数-带隙能量。
具体实施方式
定义
本发明意义上的“处理”包括作用于基板上的任意化学作用、物理作用或机械作用。
本发明意义上的“基板”为在处理设备中待处理的构件、部件或工件。基板包括但不限于具有矩形、正方形或圆形形状的平坦、板型部件。在优选实施方案中,本发明实质上处理尺寸>1m2的平面基板,例如薄玻璃板。
“真空加工或真空处理系统或设备”包括至少用于在低于环境大气压力的压力下处理基板的外壳。
“CVD”化学气相沉积为使得能够在加热基板上沉积层的公知技术。将常规液态或气态前体材料供应至处理系统,在上述处理系统中所述前体的热反应导致所述层的沉积。
“TCO”表示透明导电氧化物,因而“TCO层”为透明导电层。
在本公开内容中术语“层”、“涂层”、“沉积物”和“膜”可相互替代地用于在真空处理装备中沉积的膜,上述真空处理装备可以为CVD、LPCVD、等离子体增强CVD(PECVD)或PVD(物理气相沉积)。
“太阳能电池”或“光伏电池(PV电池)”为电构件,能够借助于光电效应使光(基本为太阳光)直接转变为电能。
“薄膜太阳能电池”在一般意义上包括在支承基板上的夹在两个电极或电极层中间的至少一个p-i-n结,该p-i-n结通过薄膜沉积半导体化合物来建立。p-i-n结或薄膜光电转换单元包括夹在p掺杂半导体化合物层和n掺杂半导体化合物层之间的本征半导体化合物层。术语“薄膜”表示所提及的层通过例如PECVD、CVD、PVD或溅射的工艺被沉积成薄层或膜。薄层实质上意指厚度为10μm或更小的层。
光学带隙:光学带隙(E_Tauc)为使用光学透射和反射即Tauc曲线测得的带隙。光学带隙通常以电子伏表示,其中标记Tauc表示光学带隙通过光学技术测得。
根据本发明的“宽光学带隙界面材料”为光学带隙大于在相同太阳能电池装置中的本征非晶半导体层的光学带隙的半导体层。对于通过本发明的氢等离子体处理的非晶硅界面材料,宽光学带隙(E_Tauc)大于约1.75eV,并且更特别地大于约1.78eV。注意用于本发明的太阳能电池的本征非晶硅具有量级在1.7eV的光学带隙(E_Tauc),而本征晶体硅具有量级在1.1eV的光学带隙(E_Tauc)。
具体地回到附图,图1示出根据本发明的太阳能电池100的横截面图。具有TCO电极层20的透明基板10设置或形成在真空处理系统中。通常TCO电极层包括SnO2和/或ZnO或者其他公知的透明导电氧化物例如铟锡氧化物。
在TCO电极层20之上通常通过一种化学气相沉积(例如等离子体化学气相沉积)而沉积有p掺杂半导体层30。如在本文中所使用的,术语“之上”当指代第二层设置在第一层“之上”时包括如下两种情况:第一层和第二层直接接触的情况以及在第一层和第二层之间设置有一个或更多个中间层的情况。此外,尽管图1示出通常在不透明基板上的其中p掺杂层先沉积的p-i-n结构,但是本发明等同地可应用于其中n掺杂层先沉积的n-i-p结构。
在一个示例性实施方案中,p掺杂半导体层30的至少一部分为含硅的非晶层。然而,在p掺杂半导体层30中也可以使用其他含硅半导体层。这些含硅半导体层包括但不限于p掺杂硅锗混合物、非晶Si:C、非晶SiOx、硅锗碳混合物以及用在太阳能电池应用中的其他已知硅基材料。p掺杂剂通常为硼,虽然基于层的期望电性质可以选择其他掺杂剂。
p掺杂层不需要是单一组成或单一形态。也就是说,p掺杂半导体层可以包括一个或更多个不同组成和形态的子层。具体地,可以沉积包括p掺杂微晶硅(μc-Si)或p掺杂微晶氢化硅(μc-Si:H)或者包含硅的其他p掺杂微晶层的第一子层,随后是包括非晶硅(包括如上所述的非晶Si:C、非晶SiOx、硅锗碳混合物等)的一个或更多个p掺杂层。
在p掺杂半导体层30之上沉积有宽光学带隙界面膜40。界面膜由5纳米至20纳米量级的薄层本征氢化非晶硅形成。从含硅前体实例(例如硅烷)和氢气进行的等离子体增强化学气相沉积可以用于形成宽光学带隙界面膜。使用等离子体增强化学气相沉积在如下方面是有利的:可以控制沉积条件以选择氢化水平,并由此而选择膜的光学性质。注意由于碳显示出光致衰退效应而不将碳包括在宽光学带隙界面膜40中。除非晶硅以外,还可以可选地包括不显著影响宽光学带隙界面膜40的光学性质和阻挡性质的其他材料。具体地,在不影响材料整体性质的情况下材料可以可选地略微掺杂硼。还考虑添加氧使得膜对基于光的衰退抗性更强并且还展现出宽光学带隙。具体地,宽光学带隙界面膜的沉积在没有使用任何含碳气体(例如CH4或其他碳氢化合物气体)的情况下进行。因此,宽光学带隙界面膜40实质上不含碳。如在本文中所使用的,术语“实质上不含碳”意指碳水平低于可以影响层的光学性质或电性质的任何水平。
为了显著增加宽光学带隙界面膜40的抗光致衰退性,在所沉积的膜上进行含氢等离子体处理。该处理通常进行大约120秒至600秒的时间段。在不受理论限定的情况下,假定宽带隙a-Si:H主要表现出较少的缺陷(与含碳的层相比)和对于SWE的提高的稳定性,以及假定氢等离子体处理改变了层的带隙。在层的视觉研究中,如在示出经氢处理的宽光学带隙材料和未经处理的宽光学带隙材料的吸收系数-带隙能量的图4中可以看到的,氢等离子体处理使层的颜色变亮。
在宽光学带隙界面膜40之上沉积有非晶半导体材料的本征层50。与p掺杂半导体层30一样,本征层50可以为硅基的并且通过化学气相沉积或等离子增强化学气相沉积来沉积。可选地在本征层50之上可以形成具有等离子体处理的另一层宽光学带隙界面膜40。可替代地,可以用如上所述的氢等离子体处理来处理本征层50的上表面。在一些实施方案中可能有利的是,在本征层50内插入多个宽光学带隙界面膜40以提高整个装置的抗光致衰退性。
在本征层50(以及可选的另外的界面层)之上形成有n掺杂半导体层60。与p掺杂层一样,n掺杂层可以包括一个或更多个不同组成和/或形态的子层。具体地,可以形成包括n掺杂非晶硅、n掺杂非晶Si:C、n掺杂非晶SiOx、n掺杂硅锗碳混合物或其它包含非晶硅的其他n掺杂层的第一子层。在该第一子层之上可选地沉积n掺杂微晶硅(μc-Si)或n掺杂微晶氢化硅(μc-Si:H)或者其他包含硅的n掺杂微晶层。虽然通常选择磷为n掺杂剂,但是基于期望的电性质可以选择其他掺杂材料。
在n掺杂层之上形成电极层70和反射性基板电极80或者将电极层70和反射性基板电极80接合至n掺杂层。
图2示出具有两个p-i-n结构的串联太阳能电池结构。顶p-i-n结构基本上类似于图1中所示的装置。在第一p-i-n结构与第二p-i-n结构之间设置有波长选择性反射器200以使入射光的一部分选择性反射回到非晶p-i-n结构中。注意对入射光的被反射回第一p-i-n结构中的部分进行的选择将受界面层40所施加的增加的稳定性的影响。如果非晶p-i-n结构具有提高的光致稳定性,则连同波长选择性反射器200的厚度,串联装置可以适用于进一步提高稳定效率。
在第二p-i-n结构中,层230、层250和层260分别为通过等离子体增强CVD沉积的p掺杂微晶硅、本征微晶硅和n掺杂微晶硅。
为第二p-i-n结构设置电极层270和反射器/反射性电极280。注意图2的结构有时称为“非晶/微晶堆叠(micromorph)”结构,原因是该结构结合了微晶硅基p-i-n和非晶硅基p-i-n两者。因为微晶硅和非晶硅吸收入射光光谱的不同区域,所以通过利用可用光谱的较大部分使串联p-i-n结构增加了装置的整体效率。
当然要理解的是,新型宽光学带隙界面膜可以用在包括各种层构造的各种太阳能电池中,并且以上装置仅是示例性构造而非限制性实施方案。这样的太阳能电池包括各种层厚和形态的多结太阳能电池、串联电池、单结电池。
实施例
1.光学带隙的测量:
为了表征本发明的发明的界面膜,制备了多层堆叠体,该多层有6个薄的约12nm的界面膜。在沉积多层中的各个12nm厚的膜之后施加氢等离子体。约70nm的多层比单独的薄的15nm至20nm的单层更适合于可靠的表征。
研究了用于层的如下工艺条件:
CH4=50→有CH4的情况下的a-SiC:H层,沉积之后无H2等离子体;
CH4=0→没有CH4的情况下的a-Si:H层,沉积之后无H2等离子体;
H2.v1→没有CH4的情况下的a-Si:H层,0.8毫巴下100秒的H2等离子体;
H2.v2→没有CH4的情况下的a-Si:H层,2.5毫巴下100秒的H2等离子体。
结果示出在图3中,图3示出根据各种组成和处理条件的光学带隙。与a-SiC:H层相比,没有CH4的情况下的层具有较低的光学带隙能量(较低的E_Tauc),但具有非常好的材料质量(低的R因子)。在沉积之后施加氢等离子体的情况下,带隙能量E_Tauc增加至类似于对于有CH4的情况下的层得到的带隙能量值的值。同时,与没有CH4的情况下的层相比,层质量劣化(即,R因子增加),但是与有CH4的情况下的层相比其仍然显著较好(例如,对于H2.v2)。
2.使用宽光学带隙膜的情况下的装置特性测量
a.单个p-i-n结构
在表1中总结了发明的宽光学带隙界面膜制造参数(典型的气体流量、厚度、压力、功率密度、H2等离子体处理)。真空系统为PECVD R&DKAI M反应器。界面膜与通过等离子体增强化学气相沉积所沉积的非晶硅/碳(a-SiC:H)的阻挡层进行对比。
表1:在基板尺寸为约3000cm2的40.68MHz PECVD反应器中的典型制造参数。
对于初始状态和光致衰减后的a-Si:H单结太阳能电池,通过使用发明的宽光学带隙材料对填充因子和各种其他太阳能电池参数的有益影响示出在表2中(系列1和系列2)。
表2:a-Si:H单结p-i-n中在氢等离子体的情况下的a-Si:H界面膜-a-SiC:H界面膜(系列1和系列2)
b.多个p-i-n结构
对于串结太阳能电池,表3中示出的参数对应于如下串联结构:
a-Si:H p-i-n结构: 250nm
波长选择性镜: 70nm
微晶Si:H p-i-n: 2000nm
串结太阳能电池沉积在纹理化的康宁(Corning)玻璃上的LPCVDZnO(约1200nm)上并且为底部限制型。硅/碳层与设置在p/i界面和i/n界面之间的发明的氢等离子体处理界面层进行对比。两个太阳能电池分别以相同的方式沉积、操作、测量和衰减。
表3示出用于串联非晶/微晶太阳能电池的发明的膜的情况下的太阳能电池参数。两个电池均清楚地示出:对于结合在太阳能电池中的新型宽光学带隙界面膜(宽带隙a-Si:H且暴露于氢等离子体),经过衰减的填充因子值较好。由于VOC和JSC具有相同的等级,所以发明的膜使太阳能电池效率的稳定性得到提高。
表3:串结p-i-n太阳能电池中在氢等离子体的情况下的a-Si:H界面膜-a-SiC:H界面膜(系列1)
3.形成宽光学带隙膜的工艺参数上的变化
在表4中给出用于制造宽光学带隙界面膜的各种PECVD工艺参数。施加的RF功率在250瓦特至600瓦特变化,同时压力也在0.5毫巴至4.0毫巴变化。与参考层相比,在较高处理压力(即,2.5毫巴而非0.8毫巴)下进行H2等离子体处理或者进行H2等离子体处理较短的处理时间(50秒而非100秒)会得到提高的材料质量以及相似或较低的带隙能量。制备缓冲层期间RF功率上的降低引起相同带隙能量下显著提高的材料质量。此外缓冲层沉积期间较低的RF功率和较高处理压力下的H2等离子体的组合会得到良好的单层结果。
表4:用于形成宽光学带隙界面膜的工艺参数
虽然已经相对于各种实施方案描述了前述发明,但是实施方案不是限制性的。本领域普通技术人员将理解大量变化方案和修改方案。认为这样的变化方案和修改方案包括在所附权利要求的范围内。
Claims (15)
1.一种形成具有提高的抗光致衰退性的太阳能电池的方法,所述方法包括:
提供透明基板,在所述透明基板上形成有透明导电的第一电极层;
在所述透明基板和电极之上沉积一个或更多个p掺杂半导体层,所述一个或更多个p掺杂层包括至少一个包含如下物质的子层:p掺杂非晶硅、p掺杂非晶硅碳、p掺杂非晶硅氧、p掺杂微晶硅、p掺杂微晶氢化硅、p掺杂微晶硅碳或p掺杂微晶硅氧;
在所述p掺杂半导体层上沉积实质上由本征氢化非晶硅膜组成的宽光学带隙界面膜;
用氢等离子体处理所述宽光学带隙界面膜;
在所述宽光学带隙界面膜之上沉积含硅的本征半导体层;
在所述本征半导体层之上沉积一个或更多个n掺杂半导体层,所述一个或更多个n掺杂半导体层包括至少一个包含如下物质的子层:n掺杂非晶硅、n掺杂非晶硅碳、n掺杂非晶硅氧、n掺杂微晶硅、n掺杂微晶氢化硅、n掺杂微晶硅碳或n掺杂微晶硅氧;
在所述n掺杂半导体层之上形成第二电极。
2.根据权利要求1所述的形成具有提高的抗光致衰退性的太阳能电池的方法,还包括在所述本征半导体层上沉积实质上由本征非晶硅膜组成的第二宽光学带隙界面膜;以及
用氢等离子体处理所述第二宽光学带隙界面膜。
3.根据权利要求1或2所述的形成具有提高的抗光致衰退性的太阳能电池的方法,还包括在沉积所述n掺杂半导体层之前用氢等离子体处理所沉积的本征半导体层。
4.根据前述权利要求中之一所述的形成具有提高的抗光致衰退性的太阳能电池的方法,还包括:
在所述n掺杂半导体层之上形成波长选择性反射器;
在所述波长选择性反射器之上形成p-i-n半导体结构;
在所述p-i-n半导体结构之上形成所述第二电极。
5.根据权利要求4所述的形成具有提高的抗光致衰退性的太阳能电池的方法,其中形成所述p-i-n半导体结构包括:
形成含微晶硅的p掺杂微晶半导体层;
在所述p掺杂微晶半导体层之上形成含微晶硅的本征微晶半导体层;
在所述本征微晶半导体层之上形成含微晶硅的n掺杂微晶半导体层。
6.根据权利要求5所述的形成具有提高的抗光致衰退性的太阳能电池的方法,还包括在所述p掺杂微晶层上沉积实质上由本征非晶硅膜组成的宽光学带隙界面膜;
用氢等离子体处理沉积在所述p掺杂微晶层上的所述宽光学带隙界面膜。
7.根据前述权利要求中之一所述的方法,其中,使用所述氢等离子体的所述处理进行足以产生1.75eV或更大的光学Tauc带隙的时间。
8.根据前述权利要求中之一所述的方法,其中,在没有使用任何含碳气体的情况下进行所述宽光学带隙界面膜的沉积。
9.根据前述权利要求中之一所述的方法,其中,所述p掺杂半导体层包括p掺杂微晶硅子层和p掺杂非晶硅子层。
10.根据前述权利要求中之一所述的方法,其中,所述n掺杂半导体层包括n掺杂微晶硅子层和n掺杂非晶硅子层。
11.根据前述权利要求中之一所述的方法,还包括在所述本征半导体层内沉积宽光学带隙界面膜。
12.一种根据前述权利要求中之一所述的方法形成的具有提高的抗光致衰退性的太阳能电池。
13.根据权利要求12所述的具有提高的抗光致衰退性的太阳能电池,其中,所述宽光学带隙界面膜实质上不含碳。
14.一种具有至少一个p-i-n结构的硅基太阳能电池,所述至少一个p-i-n结构的一部分包括非晶硅,所述电池包括实质上由光学Tauc带隙为1.75eV或更大的经氢等离子体处理的非晶硅组成的宽光学带隙界面膜。
15.根据权利要求14所述的硅基太阳能电池,其中,所述宽光学带隙界面膜实质上不含碳。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261645121P | 2012-05-10 | 2012-05-10 | |
US61/645,121 | 2012-05-10 | ||
PCT/EP2013/001393 WO2013167282A1 (en) | 2012-05-10 | 2013-05-10 | Silicon-based solar cells with improved resistance to light-induced degradation |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104272473A true CN104272473A (zh) | 2015-01-07 |
Family
ID=48520887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380024285.6A Pending CN104272473A (zh) | 2012-05-10 | 2013-05-10 | 具有提高的抗光致衰退性的硅基太阳能电池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150136210A1 (zh) |
CN (1) | CN104272473A (zh) |
TW (1) | TW201403852A (zh) |
WO (1) | WO2013167282A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105489669A (zh) * | 2015-11-26 | 2016-04-13 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池及其界面处理方法 |
CN110707182A (zh) * | 2019-10-18 | 2020-01-17 | 苏州联诺太阳能科技有限公司 | 一种异质结电池制备方法 |
CN114171631A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
CN114171630A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9214577B2 (en) | 2012-02-28 | 2015-12-15 | International Business Machines Corporation | Reduced light degradation due to low power deposition of buffer layer |
US20140217408A1 (en) * | 2013-02-06 | 2014-08-07 | International Business Machines Corporaton | Buffer layer for high performing and low light degraded solar cells |
CN104505427B (zh) * | 2014-10-24 | 2016-07-13 | 横店集团东磁股份有限公司 | 改善晶体硅太阳能电池片lid和pid的方法及装置 |
CN107017317B (zh) * | 2017-06-06 | 2019-01-29 | 浙江晶科能源有限公司 | 一种太阳能电池及其制备方法 |
CN108922937B (zh) * | 2018-07-29 | 2024-04-05 | 江苏润阳悦达光伏科技有限公司 | Hit太阳电池的硼掺杂发射极结构与制备方法 |
CN118281090B (zh) * | 2024-05-24 | 2024-10-11 | 通威太阳能(安徽)有限公司 | 太阳电池及其制备方法、生产设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635408A (en) * | 1994-04-28 | 1997-06-03 | Canon Kabushiki Kaisha | Method of producing a semiconductor device |
US6379994B1 (en) * | 1995-09-25 | 2002-04-30 | Canon Kabushiki Kaisha | Method for manufacturing photovoltaic element |
CN101542745A (zh) * | 2007-07-24 | 2009-09-23 | 应用材料股份有限公司 | 多接面太阳能电池及其形成方法与设备 |
CN102272950A (zh) * | 2008-12-19 | 2011-12-07 | 应用材料股份有限公司 | 用于薄膜与晶圆基太阳能应用的微晶硅合金 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100269896A1 (en) * | 2008-09-11 | 2010-10-28 | Applied Materials, Inc. | Microcrystalline silicon alloys for thin film and wafer based solar applications |
JP4761322B2 (ja) * | 2009-04-30 | 2011-08-31 | シャープ株式会社 | 半導体膜の成膜方法および光電変換装置の製造方法 |
US8252624B2 (en) | 2010-01-18 | 2012-08-28 | Applied Materials, Inc. | Method of manufacturing thin film solar cells having a high conversion efficiency |
US20110308583A1 (en) | 2010-06-16 | 2011-12-22 | International Business Machines Corporation | Plasma treatment at a p-i junction for increasing open circuit voltage of a photovoltaic device |
TW201246588A (en) * | 2011-05-06 | 2012-11-16 | Auria Solar Co Ltd | Solar cell module and manufacturing method thereof |
-
2013
- 2013-05-10 TW TW102116793A patent/TW201403852A/zh unknown
- 2013-05-10 CN CN201380024285.6A patent/CN104272473A/zh active Pending
- 2013-05-10 US US14/400,095 patent/US20150136210A1/en not_active Abandoned
- 2013-05-10 WO PCT/EP2013/001393 patent/WO2013167282A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635408A (en) * | 1994-04-28 | 1997-06-03 | Canon Kabushiki Kaisha | Method of producing a semiconductor device |
US6379994B1 (en) * | 1995-09-25 | 2002-04-30 | Canon Kabushiki Kaisha | Method for manufacturing photovoltaic element |
CN101542745A (zh) * | 2007-07-24 | 2009-09-23 | 应用材料股份有限公司 | 多接面太阳能电池及其形成方法与设备 |
CN102272950A (zh) * | 2008-12-19 | 2011-12-07 | 应用材料股份有限公司 | 用于薄膜与晶圆基太阳能应用的微晶硅合金 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105489669A (zh) * | 2015-11-26 | 2016-04-13 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池及其界面处理方法 |
CN110707182A (zh) * | 2019-10-18 | 2020-01-17 | 苏州联诺太阳能科技有限公司 | 一种异质结电池制备方法 |
CN110707182B (zh) * | 2019-10-18 | 2022-07-12 | 苏州联诺太阳能科技有限公司 | 一种异质结电池制备方法 |
CN114171631A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
CN114171630A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
Also Published As
Publication number | Publication date |
---|---|
TW201403852A (zh) | 2014-01-16 |
WO2013167282A1 (en) | 2013-11-14 |
US20150136210A1 (en) | 2015-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104272473A (zh) | 具有提高的抗光致衰退性的硅基太阳能电池 | |
US5646050A (en) | Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition | |
JP2020508570A (ja) | 多接合光起電デバイス | |
US20020046766A1 (en) | Amorphous silicon photovoltaic devices | |
WO2006057160A1 (ja) | 薄膜光電変換装置 | |
US9917220B2 (en) | Buffer layer for high performing and low light degraded solar cells | |
JPWO2005011002A1 (ja) | シリコン系薄膜太陽電池 | |
Kirner et al. | An improved silicon‐oxide‐based intermediate‐reflector for micromorph solar cells | |
EP2541614A1 (en) | Thin film photoelectric conversion device and process for production thereof | |
EP2599127B1 (en) | Multiple-junction photoelectric device and its production process | |
US20110308583A1 (en) | Plasma treatment at a p-i junction for increasing open circuit voltage of a photovoltaic device | |
CN102138220A (zh) | 用于为具有降低的光致衰退的光伏器件淀积非晶硅膜以改进稳定性能的方法 | |
CN103238219A (zh) | 用于a-Si单结和多结薄膜硅太阳能电池的改进的a-Si:H吸收层 | |
CN101350377B (zh) | 硅多结太阳能电池及其制备方法 | |
de Vrijer et al. | Application of metal, metal‐oxide, and silicon‐oxide based intermediate reflective layers for current matching in autonomous high‐voltage multijunction photovoltaic devices | |
US20130291933A1 (en) | SiOx n-LAYER FOR MICROCRYSTALLINE PIN JUNCTION | |
KR101083402B1 (ko) | 박막형 태양전지 및 그 제조방법 | |
Mews | Interfaces in amorphous/crystalline silicon heterojunction solar cells | |
TW201041163A (en) | Thin-film silicon tandem cell | |
Kirner | Development of wide band gap materials for thin film silicon solar cells | |
JP2013536991A (ja) | a−Si単接合および多接合薄膜シリコン太陽電池のための向上したa−Si:H吸収体層 | |
TWI453928B (zh) | 太陽能模組及製造具有串聯半導體層堆疊之太陽能模組之方法 | |
Despeisse et al. | Research and developments in thin-film silicon photovoltaics | |
Krajangsang et al. | Wide‐Gap p‐μc‐Si1− xOx: H Films and Their Application to Amorphous Silicon Solar Cells | |
Qiu et al. | A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150107 |