TW201029208A - Microcrystalline silicon alloys for thin film and wafer based solar applications - Google Patents

Abstract

A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as light-trapping enhancement layers and charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap and high conductivity.

Description

201029208 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION Embodiments of the present invention generally relate to solar cells and methods of forming the same. In particular, embodiments of the invention relate to wavelength selective reflective layers formed on thin films and crystalline solar cells. [Prior Art] Crystalline germanium solar cells and thin film solar cells are two types of solar cells. Crystalline germanium solar cells generally employ a single crystal substrate (i.e., a pure germanium single crystal substrate) or a polycrystalline substrate (i.e., polycrystalline or polycrystalline). Additional layers are deposited on the substrate to enhance light yield, form circuits and protect the device. Thin film solar cells use a thin layer of material that is deposited on a suitable substrate to form one or more p-n junction regions. Suitable substrates include glass, metal and polymer substrates. In order to expand the economic use of solar cells, efficiency must be improved. Solar cell efficiency is related to the ratio of incident light converted to useful power. In order to be used in more applications, solar cell efficiency must be higher than the current best performance of about 15. As energy costs increase, there is a need for improved thin film solar cells and methods and apparatus for forming them in a factory environment. SUMMARY OF THE INVENTION Embodiments of the present invention provide methods of forming solar cells. Some embodiments provide a method of fabricating a solar cell comprising forming a conductive layer 201029208 onto a substrate and forming a p-type crystalline semiconductor alloy layer onto the conductive layer. Some embodiments of the invention also include amorphous or intrinsic semiconductor layers, n-type doped amorphous or crystalline layers, buffer layers, denatured doped layers, and conductive layers. The second conductive layer may be formed on the n-type crystalline layer. An alternative embodiment provides a method of forming a solar cell comprising forming a conductive layer onto a substrate, forming a first doped crystalline semiconductor alloy layer onto the conductive layer, and forming a second doped crystalline semiconductor alloy layer to the first doped crystalline semiconductor On the alloy layer. Some embodiments also include undoped non-Ba or crystalline semiconducting layers, buffer layers, denatured layers, and conductive layers. Some embodiments further include the third and fourth doped crystalline semiconductor alloy layers in a tandem joint structure. Still other embodiments provide a method of forming a solar cell comprising forming a reflective layer onto a semiconductor substrate and forming a crystalline bonding surface onto the reflective layer wherein the reflective layer comprises one or more crystalline semiconductor alloy layers.

Embodiments of the present invention further provide an optoelectronic device including a reflective layer disposed in a first P_i_n junction region and a second pin junction region and having a plurality of perforations, wherein each of the plurality of perforations is by a second The pin bonding region is formed in front of the reflective layer and is formed by removing a portion of the material of the reflective layer. Embodiments of the present invention further provide a method of forming a solar cell device, comprising forming a first pin bond region on a surface of a substrate to form a first reflective layer onto a first pin bond region, wherein the first reflective layer selectively has a wavelength of about 550 Light from nanometers (nm) to about 800 nm is reflected back to the first pin bond region, and a second pin bond region is formed onto the first reflective layer. Embodiments of the present invention further provide a kinetic and integrated system for forming a solar cell from 4 201029208 comprising a first deposition chamber suitable for depositing a p-type smectic layer to a surface of the substrate, suitable for depositing an intrinsic yttrium-containing layer And a second deposition chamber containing an n-type germanium layer to the surface of the substrate, a second deposition chamber adapted to deposit the n-type reflective layer to the surface of the substrate, and a round chamber adapted to form a plurality of perforations in the n-type reflective layer a chamber, and an automated delivery device adapted to transport the substrate between the first deposition chamber, the second deposition chamber, the third deposition chamber, and the patterning chamber. An embodiment of the present invention further provides an automation and integration system for forming a solar cell, comprising a first cluster tool and a second cluster tool, the first cluster tool comprising at least one suitable for depositing a p-type germanium-containing layer to a substrate surface a processing chamber, at least one processing chamber adapted to deposit an intrinsic germanium containing layer to the surface of the substrate, and at least one processing chamber adapted to deposit an n-type germanium containing layer to the surface of the substrate, the second cluster tool comprising at least one suitable And a processing chamber for depositing the n-type reflective layer to the surface of the substrate and an automated transport device adapted to transfer the substrate between the first and first cluster tools. [Embodiment] Thin film solar cells are generally composed of a plurality of films or layers placed together in many different ways. Most of the membranes used in this apparatus contain a semiconductor element containing ruthenium, rhodium, carbon, boron, phosphorus, nitrogen, oxygen, hydrogen, and the like. Different film characteristics include crystallinity, dopant type, dopant concentration, film refractive index, film extinction coefficient, film transparency, film absorption rate, and electrical conductivity. In general, most of these films are formed using a chemical vapor deposition process, and package 5 201029208 includes several degrees of ionization or plasma formation. Films for solar cells During the optoelectronic process, charges are generally generated by a bulk semiconductor layer such as a germanium containing layer. The bulk layer is sometimes referred to as the intrinsic layer to distinguish it from the various miscellaneous layers in the solar cell. The intrinsic layer can have any predetermined degree of crystallinity which will affect its light absorption characteristics. For example, amorphous intrinsic layers (e.g., amorphous germanium) typically absorb light of different wavelengths from intrinsic layers of different crystallinity, such as microcrystalline germanium. For this reason, most solar cells use two layers to produce the widest absorbable characteristics. In some instances, the intrinsic layer acts as a buffer between two different layers, causing a linear transition between the optical properties or electrical properties of the two layers.

Tantalum and other semiconductors can form solids of different crystallinity. The essence of the knotless crystal solid is amorphous, and the nickname with a slight degree of crystallinity is called amorphous 矽. The complete crystal nickname is crystalline, polycrystalline or single crystal germanium. Polycrystalline germanium is a crystalline germanium that forms a plurality of grains separated by grain boundaries. Single crystal ruthenium is a single crystal of ruthenium. A solid having a partial crystallinity having a crystallization fraction of about 5% to about % by weight, which is called nanocrystal or crystallite, generally refers to a crystallite size suspended in an amorphous phase. Solids with large grains are called crystallites, and solids with small grains are called nanocrystals. It should be noted that the term "crystalline 矽" may refer to a hair having any crystal phase type including both early crystals and nanocrystalline crystals. The first circle is a schematic view of one embodiment of a multi-joint surface solar cell 1' The light source or the solar radiation is 1. The solar cell 1 includes a substrate 102, such as a glass substrate, a polymer substrate, a metal substrate or other suitable substrate, and has a thin film formed thereon. The solar cell ι〇〇201029208 further comprises a formation A first transparent conductive oxide (TCO) layer 104 on the substrate 102, a first p_i_n junction region 126 formed on the first TCO layer 1〇4. In one configuration, a wavelength selective reflection (WSR) layer 112 Formed on the first pin bond region 126. A second pin bond region 128 is formed on the first pin bond region 126 'a second TCO layer 122 is formed on the second pin bond region 128' and a metal back layer 124 Formed on the second TC0 layer 122. In one embodiment, the WSR layer 112 is disposed between the first φ P-i_n junction region I26 and the second pin junction region US and is configured to have film properties that improve light scattering. And the solar power formed The current is generated in 1 。. In addition, the WSR layer 112 also provides a good p_n wear-through interface 'having a high electrical conductivity and a suitable band gap range that affects its penetration and reflection properties' to enhance the formation of solar cells. Conversion efficiency. The WSR layer 112 will be described in further detail. To improve light absorption by enhancing light trapping, fish, plasma, ion and/or mechanical treatment can be used to selectively texture the substrate and/or form it. One or more layers of film. For example, in the embodiment shown in Figure j, the first TC0 layer 104 is textured, and the subsequently deposited film substantially follows the topography of the underlying surface. The first TC0 layer 104 and The third TC layer 122 each comprises an oxidized kick, zinc oxide, indium tin oxide, cadmium stannate, combinations thereof, or other suitable materials. It should be understood that the TCO material may also include additional handles and ingredients. For example, zinc oxide also includes blends. Qualities, such as !g, gallium 1 and other suitable dopants. Oxidation preferably comprises 5 atomic % or less of dopant, more preferably 2.5 atomic % or less. In some examples, substrate 1 〇 2 is made of glass. Business introduction 201029208 The first TCO layer 104 is formed and formed. The first pin bonding region 126 includes a p-type amorphous germanium layer 1〇6, an intrinsic amorphous germanium layer 1〇8 formed on the P-type amorphous germanium layer 106, and . % of the n-type microcrystalline germanium layer 11 on the intrinsic amorphous germanium layer 124. • In some embodiments, the p-type amorphous germanium layer 1〇6 is formed to a thickness of about 60 angstroms (Å) to about 300 Å. In some embodiments, the intrinsic amorphous germanium layer 108 is formed to a thickness of from about 15 Å to about 35 Å. In some embodiments, the η-type microcrystalline layer uo is formed to a thickness of About 100 Α to about 40 〇Α. The WSR layer 112 is disposed between the first ρ·ί_η junction region 126 and the second p-i-n junction region 128 to have some predetermined film properties. In this configuration, the WSR layer 112 actively acts as an intermediate reflector having a predetermined index of refraction or refractive index to reflect light received from the incident side of the solar cell 1. The WSR layer 112 also acts as a junction layer that increases the absorption of the short-wavelength to intermediate-wavelength light (eg, 28 〇 nm to 8 〇〇 nm) by the first p-sm junction region 126 and improves the short-circuit current, thereby improving quantum and Conversion efficiency. The wsr layer 2 further has a high film transmittance for intermediate wavelengths to long wavelength light (e.g., 5 Å to U 〇〇 nm) to assist light penetration into the layer formed in the land 128. In addition, the normal-stage WSR layer 112 does not absorb light as much as possible, but reflects the light of the pre-twist wavelength (such as a short wavelength) back to the layers of the first p_i_n junction region I%, and allows the predetermined wavelength of light (such as long wavelength) to penetrate. The second pi_n is the layers of the land 128. In addition, the WSR layer 112 can have a predetermined energy band gap and high film conductivity 'to effectively conduct the generated current and allow electrons to flow from the first pin junction region 126 to the second p-i_n junction region 128, and avoid blocking. The current. The WSR layer 112 reflects the short wavelength light back to the 8 201029208 first P_i_n junction region 126 while allowing substantially all of the long wavelength light to pass through the first pM-n junction region 128. The overall solar cell conversion efficiency can be improved by forming a |8-foot layer 112 having a high film transmittance, a low film light absorptivity, a predetermined band gap property (such as a wide band gap range), and a high conductivity for a predetermined wavelength. In one embodiment, the WSR layer 112 is a microcrystalline layer having an n-type or p-type dopant disposed in the WSR layer 112. In an exemplary embodiment, the 'WSR layer 112 is an n-type microcrystalline germanium alloy having an n-type dopant disposed in the boundary 8' layer η2. The different dopants disposed in the WSR layer U2 also affect the film optical properties and electrical properties of the WSR layer, such as band gap, crystallization fraction, conductivity, transparency, film refractive index, extinction coefficient, and the like. In some examples, one or more dopants may be doped into different regions of the WSR layer 112 to effectively control and adjust the film bandgap, work function, conductivity, transparency, and the like. In one embodiment, the WSR layer 112 is controlled to have a refractive index of from about 1.4 to about 4, an energy band gap of at least about 2 electron volts (eV), and a conductivity of about 0.3 S/cm. In one embodiment, the WSR layer 112 comprises an n-type doped bismuth alloy layer, such as yttrium oxide (SiOx, SiO 2 ), tantalum carbide (SiC), hafnium oxynitride (SiON), tantalum nitride (SiN), nitrided. Carbonium (SicN), cerium oxide (SiOC), carbon oxynitride (..., etc. In an exemplary embodiment, 'WSR layer 112 is an n-type siON or SiC layer. The second Pin junction 128 contains p The microcrystalline germanium layer 114, and in some cases comprises a selective p_i buffered intrinsic amorphous germanium (piB) layer 116' formed on the p-type microcrystalline germanium layer 114. Next, an intrinsic micro 9 201029208 spar A layer 11 8 is formed on the p-type microcrystalline germanium layer 14 and an n-type amorphous germanium layer 120 is formed on the intrinsic microcrystalline germanium layer 118. In some embodiments, the p-type microcrystalline germanium layer 4 The formed thickness is from about i〇〇a to about 400 A. In certain embodiments, the p_i buffered intrinsic amorphous germanium (piB) layer 116 is formed to a thickness of from about 5 Å to about 500 Å. In some embodiments The intrinsic microcrystalline germanium layer 118 is formed to a thickness of from about 1 〇〇〇〇A to about 30,000 A. In some embodiments, the n-type amorphous germanium layer 12 is formed to a thickness of about ιοοΑ 5〇oA. The metal back layer 124 comprises a material selected from the group consisting of Ming (A1), silver (Ag), zi (Ti), chromium (Cr), gold (Au), copper (Cu), and (Pt), alloys thereof and The materials of the group of compositions are 'but are not limited thereto. Other processes may be performed to form the solar cell 100, such as a laser cutting process. Other films, materials, substrates, and/or packages may be disposed on the metal back layer 124. The solar cell device is completed. The formed solar cells can be interconnected into modules that are in turn connected in an array. Solar radiation 101 is primarily absorbed by the intrinsic layers 108, 118 of the pin junction regions 126, 128 and converted into pairs of electron holes. An electric field extending across the intrinsic layers 108, 118 between the p-type layers 、6, 114 and the π-type layers 110, 120 causes electrons to flow toward the n-type layers 110, 120' and the holes flow toward the p-type layers 1 〇 6, 114, The current is thus generated. Since the amorphous germanium and the microcrystalline germanium absorb solar radiation 101 of different wavelengths, the first pin bonding region 126 includes the intrinsic amorphous germanium layer 108' and the second pin bonding region 128 includes the intrinsic microcrystalline dream layer. 11 8 » So, the formation of the solar cell 1 will capture more Part of the solar radiation spectrum is more efficient. Since the amorphous bandgap 201029208 is larger than the microcrystals, the solar radiation 101 is irradiated onto the intrinsic amorphous layer 108 and passes through the WSR layer 112. The intrinsic layers ι〇8, 118 of the amorphous germanium and the intrinsic microcrystalline layer are stacked in such a manner as to illuminate the intrinsic microcrystalline germanium layer 118. The solar radiation not absorbed by the first p_i_n junction region 126 continues through the WSR layer 112' and continues to travel. To the second p_j_n junction area 128.

The intrinsic amorphous tantalum layer 108 can be deposited by providing a mixed gas of hydrogen gas and a xenon gas ratio of about 20:1 or less. The supply of decane gas has a flow rate of about 〇.5 per minute from standard milliliters per liter (sccm/L) to about 7 sccm/L. The supply flow rate of helium is from about 5 sccm/L to about 6 〇 sccm/L. A radio frequency (RF) power of about 15 mW/cm 2 (mW/cm 2 ) to about 25 〇 mW/cm 2 is supplied to the shower head. The chamber pressure is maintained between about 0.1 Torr and about 20 Torr, such as from about 5 Torr to about 5 Torr. The deposition rate of the intrinsic amorphous germanium layer 108 is about 1 Å/min (A/min) or more. In an exemplary embodiment, the intrinsic amorphous tantalum layer 1〇8 is deposited at a hydrogen to burn ratio of about 12 5:!. The P-1 buffered intrinsic amorphous germanium (PIB) layer 116 can be deposited by providing a mixed gas of hydrogen and decane gas at a ratio of about 50··1 or less, for example, less than about 30: for example, about 2〇:1 to Approximately 3:1, such as a supply flow rate of the gas is about G 5seem/L to about 5 seem/L, for example about 2.3 sCCm/L. The hydrogen supply flow rate is from about 5 sccm/L to about 8 〇 SCCm/L, for example from about 2 〇 SCCm/L to about 65 sccm/L, such as 57 sCCm/L. About l5mW/cm2 to about (10) read / one power about Μ - 2) supply sprinkler. The chamber force is maintained at about (MTorr to about 2. between the ears, preferably about 5 Torr to about 5 Torr, for example: 201029208 3 Torr "The deposition rate of the PIB layer is about i〇 〇A / min or above. The intrinsic microcrystalline layer 118 can be obtained by providing a mixed gas of hydrogen to decane gas ratio of about 2 〇 1 to about 200 : i. The supply flow rate of the decane gas is about 〇. 5 sccm / L to about 5 sccm / L. The supply flow rate of hydrogen is from about 4 〇 sccm / L to about 4 〇〇 sccm / L. In some embodiments, the decane flow rate rises from the first flow rate to the second flow rate during deposition In certain embodiments, the hydrogen flow rate decreases from the first flow rate to the second flow rate during deposition. Preferably, from about 1 Torr to about 20 Torr at a chamber pressure of from about 1 Torr to about 1 Torr. Preferably, the ear, more preferably from about 4 to about 12 Torr, applies an RF power of about 300 mW/cm2 or more (preferably 6 〇〇mW/cm2 or more), typically at a speed of about 20 〇A/min or more ( Preferably, about 5 A/min) is deposited with an intrinsic type of microcrystalline layer having a crystallization fraction of from about 20% to about 80%, preferably from about 55% to about 75%. In some embodiments, during deposition Will It is advantageous to increase the power density of the RF power from the first power density to the second power density. / In another embodiment, the intrinsic microcrystalline layer 118 can be deposited in multiple steps, each having a different crystallization fraction. In one embodiment, for example, the ratio of hydrogen to decane is reduced from 1 〇〇: i to 95: t, 9 〇: i and 85: i in four steps. In the embodiment, the supply flow rate of the money is From about 0.1 cmcm/L to about 5 sccm/L, for example about 97. The supply flow rate of hydrogen is from about i〇sccm/L to about 200 sccm/L, for example about 8 (^ coffee to about U) 5 SCCm/L. In an exemplary embodiment having multiple steps of deposition (e.g., four steps), the hydrogen flow rate of the first step may be about 97 SCCm/L first and then gradually reduced to about 12 201029208 92 sccm/L, 88 sccm in subsequent processing steps. /L and 83 sccm/L. Under a chamber pressure of from about 1 Torr to about 1 Torr (e.g., from about 3 Torr to about 2 Torr, for example from about 4 Torr to about 12 Torr), for example 9 Torr), applying an RF power of about 3 〇〇 niW/cm 2 or more (eg, about 49 〇mW/cm 2 ) will be about 2 〇〇 A/min or more (eg, about 40 〇 A/min). An intrinsic type of microcrystalline germanium layer. Charge collection is generally provided by a doped semiconductor layer, for example, a doped layered dopant of a p-type or n-type dopant is usually a steroidal element such as a butterfly or aluminum. The mass is usually a group ν element such as phosphorus, arsenic or. In most embodiments, 'boron is a p-type dopant and phosphorus is a n-type dopant. By incorporating a rotten or contained compound into the reaction mixture. The dopants may be added to the above-described p-type and n-type layers 1〇6, 110, 114, 120. Suitable boron and phosphorus compounds generally comprise saturated and unsaturated lower borane and phosphine oligomers. Some suitable boron compounds include trimethylboron (B(CH3)3 or TMB), diborane (B2H6), boron trifluoride (BF3), and triethylboron (B(C2H5)3 or TEB). Phosphines are the most common lining compounds. The dopant is typically accompanied by a supply of carrier gas such as hydrogen, helium, argon and other suitable gases. If hydrogen is used as the carrier gas, it increases the total amount of hydrogen in the reaction mixture, so the hydrogen ratio includes hydrogen for the carrier gas of the dopant. The dopant is typically mixed as a dilute diluent gas, for example, providing about 0.5 °/ in the carrier gas. Molar or volume concentration of dopant. If a 0.5% by volume dopant is to be supplied in a 1.0 sccm/L carrier gas, the resulting dopant flow rate is 0.005 sccm/L. The flow rate of the dopant supplied to the reaction chamber is from about 0.0002 sccm/L to about 0.1 sccm/L, depending on the predetermined degree of doping. Generally, the dopant concentration is maintained between about 1 〇 18 atoms/cm 3 to about 13 201029208 ι〇 2 ΰ atoms/cm 3 . In one embodiment, the D 刑 i i i i 可 可 可 可 可 可 可 可 可 可 可 可 可 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 114 : : : : : To about 800:1, another = about 601:1 or about am., 401.1. The supply flow rate of decane gas is

Ok pool to about 8.8sccm/L, for example about 2sccm/L to about

〇.38SCCm/L. The hydrogen supply flow rate is from about 6 〇 SCCm/L to about 500 sccm/L, for example, young, /τ such as about 143 SCCm/L. The supply flow rate of ruthenium is from about _2.2 SCCm/L to about 0.0016 sccm/L, for example about 0.0 (m5 sccm/L. If 〇5% or volume of TMB is supplied in the carrier gas, the dopant/carrier gas mixture is The supply flow rate is from about q"4seem/L to about 3232 SCCm/L, for example about 23.23 sCCm/L. Between about 1 Torr to about 1 Torr of the cavity to pressure, preferably about 3 Torr. Up to about 2 Torr, more preferably about 4 Torr to about 12 Torr, for example about 7 Torr or about 9 Torr, applying an RF power of about 50 mW/cm2 to about 700 mW/cm2, such as about 29 〇mW/ From cm2 to about 44〇〇mW/cm2, which will have a rate of about 10 OA/min or more (e.g., about /min or more)> has a crystallite fraction of about 20% to about 80% (preferably about 5). 〇% to about 7〇%) of the p-type microcrystalline germanium layer. In an embodiment, the 'P-type amorphous germanium layer 106 can be deposited by providing a mixed gas of hydrogen gas and decane gas ratio of about 20:1 or less. The supply flow rate of the argon gas is from about lsccm/L to about l〇sccm/L. The supply flow rate of hydrogen is from about 5 sccm/L to about 60 sccm/L. The supply flow rate of the triterpene butterfly is about 〇.〇〇5 sccm/ L to about 〇.〇5sccm/L. If you want to use it in the carrier gas At a concentration of 0.5% molar or volumetric trimethylboron, the supply flow rate of the dopant/carrier gas mixture 201029208 is from about 1 sccm/L to about 1 〇 sccm/L. In about 托 [Torr to about 20 Torr The cavity is preferably 'about 柁' to about 4 Torr, and an rf power of about 15 mW/cm 2 to about 2 〇〇 mW/cm 2 is applied to deposit a p-type non at a rate of about 1 OOA/min or more. In the embodiment, the n-type microcrystalline germanium layer 11 can be deposited by, for example, about 500: i or less by providing a mixed gas of hydrogen gas and a second firing gas ratio of about 100: Torr or more, for example, for example, Approximately 15 〇: i to about 4 〇〇: 丨, such as about 3 〇 4: 1 or about 2 〇 3 : 1. The supply flow rate of the decane gas is about 〇is_/L to about 〇.8 Sccm/L, for example about 0. 32 sccm / L to about 咖 45 coffee city, such as about 35.35Sccm / L. The hydrogen supply flow rate is about 3 〇 sccm / L to about 25 〇 SCCm / L, such as about 68sccm / L to about 143sccm / L, such as 71-43sCCm/L. The supply flow rate of phosphine is about sc5sccm/L to about

〇.〇〇6SCCm/L, for example, about 〇〇.〇〇25 sccm/L to about 〇 〇i5 sccm/L, such as about 0.005 SCCm/L. In other words, if a 5% molar or volume concentration of phosphine is to be supplied to the carrier gas, the feed rate of the dopant/carrier gas is from about 0.1 sccm/L to about 5 sccm/L, for example, about 55 sccm/L. About 3 sccm / L, such as about 9.9sccm / L to about l_ 〇〇 8sccm / L. At a chamber pressure of from about 1 Torr to about 100 Torr, preferably from about 3 Torr to about 2 Torr, more preferably from about 4 Torr to about 12 Torr, such as about 6 Torr or about 9 Torr. The ear's application of an rf power of about 10 〇 mW/cm 2 to about 900 mW/cm 2 (eg, about 370 mW/cm 2 ) will have a crystallization at a rate of about 5 A/min or more (eg, about 15 A/min or more). The rate is about 2〇. /〇 to about 8〇% (preferably about 50% to about 70%) of the n-type microcrystalline germanium layer. In one embodiment, the n-type amorphous germanium layer 120 can be deposited by providing a mixed gas of hydrogen gas 15 201029208 with a decane gas ratio of about 20:1 or less, for example, about 5.5.1 or 7.8:1 «> The gas supply flow rate is about (13 (; (; 111 /] ^ to about 10 sccm / L ' for example about iscem / L to about i 〇 sccm / L, about l.lsccm / L to about 5sccm / L, or about 〇 From 5 sccm / L to about 3 sccm / L, such as about 1.42 sccm / L or 5.5 sccm / L. The supply flow rate of hydrogen is from about 1 sccm / L to about 40 sccm / L, for example from about 4 sccm / L to about 40 sccm / L, or about Lsccm/L to about 10 sccm/L, such as about 6.42 sccm/L or 27 sccm/L. The supply flow rate of phosphine is about sc5 sccm/L to about

0.075 sccm/L, for example about 〇〇〇.〇〇〇5 sccm/L to about 〇〇.〇〇i5 sccm/L, or about 0.015 sccm/L to about 〇.〇3 sccm/L, such as about 〇.〇〇95 sccm/L or 0.023 sccm/L). If a 5% molar or volume concentration of phosphine is supplied in the carrier gas, the supply flow rate of the dopant/carrier gas mixture is from about sc1 sccm/L to about 15 sccm/L, for example from about l.1 sccm/L to about 3 sccm. /L, from about 2 sccm/L to about 15 sccm/L, or from about 3 sccm/L to about 6 sccm/L, such as from about 1.9 sccm/L to about 4.71 sccm/L. RF power of from about 25 mW/cm2 to about 250 mW/cm2 is applied at a chamber pressure of from about 0.1 Torr to about 2 Torr, preferably from about 0.5 Torr to about 4 Torr, such as about 1.5 Torr. About 60 mW/cm 2 or about 80 mW/cm 2 ) will deposit an n-type amorphous rock eve at a speed of about ιοοΑ/min or more, such as about 200 A/min or more, for example, about 30 A/min or about 600 A/min. Layers In some embodiments, the dopant compound can be supplied via a high speed to reinforce the hetero or denatured layers, for example at the upper limit of the above formulation. Variable doping is believed to provide a low resistance contact interface to improve charge collection, and denaturing doping is also believed to improve the conductance of certain layers (such as amorphous layers).

In some embodiments, Shi Xi and other elements (such as oxygen, carbon, nitrogen, wind and wrong) can be used. gold. These additional X elements can be added to the ruthenium membrane by replenishing each source via the reaction mixture. Niobium alloys can be used in any type of tantalum layer, including P-n, pIB, WSR or intrinsic seconds. For example, carbon can be added to a dream film by adding a carbon source such as a terracotta to a mixed gas. In general, CVC4 hydrocarbons are mostly used as carbon sources. Alternatively, an organic ruthenium compound well known in the art can be used as a source of ruthenium and a carbon source such as organic alkane, organic oxane, organic oxalate, and the like. Compounds such as mis-fired and organic decane and compounds containing ruthenium and osmium (such as decyl decane or decyl decane) can be used as a source of ruthenium. Oxygen (02) can be used as an oxygen source. Other sources of oxygen include nitrogen oxides (nitrogen monoxide (N2〇), nitric oxide (N0), dinitrogen trioxide (N2〇3), nitrogen dioxide (N〇2), and dinitrogen tetroxide (ν2〇). 4), nitrous oxide (Νζ〇5) and nitrogen trioxide (Ν〇3)), hydrogen peroxide (Η2〇2), carbon monoxide (CO) or carbon dioxide (C〇2), ozone (〇3), Oxygen atoms, oxygen radicals, and alcohols (ROH 'where R is any organic or hetero-organic radical), but not limited thereto. Nitrogen sources include nitrogen (N2), ammonia (NH3), hydrazine (N2H2), amines (RXNR'3_X, where X is 0-3, R and R' are each organic or isomeric organic radicals), guanamine ((RCO)xNR'3-x, where X is 0-3, R and R' are each of any organic or isomeric organic radical), decylene (RCONCOR, where R and R' are individually any organic or different Organic radicals), enamines, in which RrRs are individually any organic or hetero-organic radicals, and ruthenium atoms and free radicals. It should be noted that in many embodiments, a pre-wash process can be used to prepare the substrate and / 17 201029208 or the reaction chamber for upper layer deposition. A hydrogen or argon plasma pretreatment process can be performed 'by supplying about 1 〇 sccm / L to about 45 sccm / L of hydrogen or chlorine to the processing chamber, for example, about 15 sccm / L to about 40 sccm / L, such as about 20 scem / L Up to about 36 sccm/L to remove contaminants from the substrate and/or chamber walls. In one example, the supply of hydrogen is about 21 SCcm/L, or the supply of argon is about 36 sccm/L. The treatment can be accomplished by applying an RF power of from about 1 〇Inw/cm 2 to about 250 mW/cm 2 (e.g., from about 25 mW/cm 2 to about 25 〇mW/cm 2 ), for example, for a hydrogen treatment of about 60 mW/cm 2 or about 80 mW/ Cm 2 ' is used for argon treatment to be about 25 mW/cm 2 . It is advantageous in many embodiments to perform a hydrogen plasma pretreatment process prior to depositing a p-type amorphous germanium layer prior to performing an argon plasma pretreatment process and depositing other types of layers.

In one embodiment, the WSR layer 112 is an n-type crystalline germanium alloy layer formed on the n-type microcrystalline germanium layer 110. The n-type crystalline bismuth alloy layer of the 8-foot layer 112 may be microcrystalline, nanocrystalline or polycrystalline. Η-type crystalline niobium alloy WSR • I U2 contains alloying elements such as carbon, oxygen, nitrogen or any combination thereof. It can be deposited as a single-homogeneous layer, a single layer with one or more graded features, or a layer stack structure. Gradient characteristics include crystallinity, dopant concentration (e.g., phosphorus), alloy material (e.g., carbon, oxygen, nitrogen), or other characteristics such as dielectric constant, refractive index, electrical conductivity, or band gap. The type U2 alloy layer U2 includes an n-type carbonized dream layer, an n-type oxidized stone layer, an n-type nitride layer, an n-type yttria layer, an n-type yttria layer, or an n-type oxynitride layer. Carbide layer. The minor component of the n-type crystalline dream alloy read layer 112 may deviate somewhat from the chemical 18 201029208 ratio. For example, the n-type tantalum carbide layer may contain from about 1 atom% to about 5 atom% of carbon. Similarly, the n-type tantalum nitride layer may contain from about 5% to about 50% by atom of nitrogen. The n-type yttrium oxide layer can contain about! From about one atom to about five atomic percent oxygen. The content of the minor component in the alloy containing more than one secondary component may be from about i atom% to about 5 atom%, and the cerium content may be from about 50 atom% to about 99 atom% β by adjusting the precursor in the processing chamber. The ratio 'adjusts the amount of minor components. The ratio can be adjusted step by step to form a layered structure, or continuously adjusted to form a graded single layer.

A carbon-containing gas such as methane (CH4) may be added to the reaction mixture of the n-type microcrystalline germanium layer to form an n-type microcrystalline niobium carbide WSR layer U2. In one embodiment, the ratio of the carbonaceous gas flow rate to the decane flow rate is from about 〇 to about ,5, such as from about 0.20 to about 35.35, such as about 〇25. The carbon content of the deposited film can be adjusted by varying the ratio of carbonaceous gas to decane in the feed. The WSR layer ι 2 can be deposited in multiple layers each having a different carbon content, or the carbon content throughout the deposited WSR layer 112 can be continuously adjusted. Furthermore, the carbon and dopant content of the wsr layer U2 can be simultaneously adjusted and gradually changed. The advantage of depositing the WSR layer 112 into a plurality of stacked layers is that in the formed plurality of layers, the layers can have different refractive indices while allowing the multilayer stacked structure to operate as a Bragg reflector, effectively increasing the WSR layer 112 at a predetermined wavelength. The reflectance of the range, such as short wavelength to intermediate wavelength. As described above, the n-type crystalline niobium alloy WSR layer 112 has several advantages. For example, the η plastic crystalline germanium alloy wsr layer 112 may be provided at at least three locations of the solar cell, for example as a semi-reflective intermediate reflective layer, a second WSR reflection (e.g., 6B circle element symbol 512) or as a junction layer. Η-type crystal 矽 19 201029208 The alloy wSR layer 112 acts as a junction layer to promote the first-...bonding zone... absorption of short-wavelength light and improvement of short-circuit current, thereby improving quantum switching efficiency. In addition, the n-type crystal cut alloy layer u2 has predictive and electrical film properties such as high electrical conductivity, energy band gap and refractive index to obtain a predetermined reflectance and transmittance. For example, the microcrystalline carbonized niobium has an oyster fraction greater than (4), the band gap width is greater than 2 electron volts (ev), and the conduction = rate is higher than 0.CH Siemens/cm (s/cm). Further, the deposition speed may be about 15 〇 2 〇〇 A/min or more, and the thickness difference may be less than (10). The bandgap and refractive index can be adjusted by varying the ratio of carbonaceous gas to money in the reaction mixture. Adjusting the refractive index can form a reflective layer having a high electrical conductivity and a wide band gap' thus improving the current produced. Figure 2 is a side elevational view of a single bonded face film solar cell 200 in accordance with another embodiment of the present invention. The second embodiment differs from the first embodiment in that a P-type crystallized alloy layer 206 is provided between the p-type amorphous germanium layer 106 and the first TC layer 1〇4. Alternatively, the p-type crystallization alloy layer 206 is a denatured exchange layer having a P-type dopant of the heavily alloyed layer 2〇6. Thus, the embodiment of Fig. 2 includes a substrate 2〇1 on which a conductive layer 2, for example, a TC0 layer similar to the first TCO layer 104 of Fig. 1 is formed. The 卩-type crystalline bismuth alloy layer 206 is formed on the conductive layer 204 as described above. P... SB $ σ gold layer 2G6 has an improved band gap due to less doping, a smaller index of refraction than a denatured doped layer, a high electrical conductivity, and is resistant to oxygen attack by including an alloy composition. By forming a Ρ-type amorphous ruthenium layer 208, a ruthenium layer 210, an intrinsic amorphous ruthenium layer 212, and a ^-type amorphous dream layer 214', a smear junction region 20 is formed on the p-type crystallization alloy layer 2〇6. 201029208 220. That is, the second generation solar cell 200' is similar to the foregoing embodiment, the n-type crystalline germanium alloy layer 216 similar to the WSR layer 2 of FIG. 1, and the like

The solid conductive layers 122, 124 may be a flute-embedded first conductive layer 218 of a metal or metal/TCO stack structure. The first circle is a side view of a tandem junction surface solar cell according to still another embodiment of the present invention. The difference between the embodiment of Fig. 3 and the embodiment of Fig. 1 lies in the sentence

The first p-type crystalline bismuth alloy layer 3 06 is set on the first conductive layer 3〇4~nflilju

Dan p-type amorphous niobium alloy layer 308. Or, the first P-type crystal dream I

The σ f increase 306 may also be a p-type dopant in the amorphous-type fractured layer formed by the denatured doped p-type amorphous 矽. In an embodiment t, as shown in Fig. 3, a substrate similar to the previous embodiment, substrate 301. The conductive layer 304, the 帛-P type crystalline yttrium alloy layer 306, the p-type amorphous gold layer 308 and the first piB layer 31 are formed on the upper first piB layer 3 10 to be selectively formed. In the example, by forming an intrinsic amorphous layer 312, an n-type amorphous layer 314 on the conductive | 304, the -P-type alum alloy layer 306 and the P-type amorphous tantalum layer 308, The p-in junction region 328 is completed between the first pin junction region 328 and the second p+n interface region 330. The p-n small n-bonding region 33 is then formed on the wsr layer 316 and includes a second p-type crystalline germanium alloy layer Mg, a second pm layer 320, an intrinsic crystalline germanium layer 322, and an n-type crystalline germanium alloy layer 324. The second p-i'n junction region is similar to the p-1 -th junction region 128 of the solar cell 100 of Fig. 1. Similarly, the first ^ X X ^ * VV oiv yy 316 is an n-type crystal dream alloy, and the vertical j is also formed in the first ρ-ι-η junction area 328 21 201029208. The second contact layer 326 is added to the second n-type crystalline germanium alloy layer 324 to complete the solar cell 30. As described above, the second contact layer 326 may be a metal layer or a metal/TCO stacked layer. A side view of a crystalline solar cell 400 in accordance with yet another embodiment of the present invention. The fourth embodiment includes a semiconductor substrate 402 on which a crystalline germanium alloy layer 404 is formed. The crystalline germanium alloy layer 404 can be formed in accordance with any of the embodiments and formulations described. And may be a single alloy layer or a multilayer alloy layer stack structure. As described above, the crystalline germanium alloy layer 404 has an adjustable low refractive index 'and can be constructed to extract south reflectance' while allowing the crystalline dream alloy layer 404 to be formed. The back reflective layer of the crystalline solar cell 4〇6 thereon. In the embodiment of Fig. 4, the crystalline germanium alloy layer 4〇4 can be formed to any thickness of this view layer structure. The thickness of the single layer embodiment is about 5 intrusion to about 5 oo A, for example about ιοοο Α to about 200 〇 a, such as about 15 〇〇 A. The multilayer structure is characterized by a multilayer β having a thickness of about 1 〇〇A to about 1, the fifth diagram is according to the invention Tandem joint film of another embodiment A side view of the solar cell 500. The fifth embodiment is similar to the t-th structure 'including the pin-bonding regions 508, 510 formed by the first-TCO layers 1 and 4 disposed on the substrate 102. The WSR layer 112 is placed A p_i n junction region 508 is interposed between the second pin junction region. In one embodiment, the WSR layer 112 is an n-type doped germanium alloy layer, such as germanium dioxide (si〇2), tantalum carbide (sic), Niobium oxynitride (si0N), tantalum nitride (SiN), niobium carbonitride (SiCN), niobium carbon oxide (Si〇c), carbonitride, etc. In the exemplary embodiment, the WSR layer 112 is 1 In addition, a second WSR layer 5 12 (eg, or referred to as a back reflective layer) is also disposed between the second pin bond region 510 and the second TCO layer 122 or metal back layer 124. The film properties of the second WSR layer 512 are similar to those of the first WSR layer 112. Just as the first WSR layer 112 reflects short-wavelength light back to the first pin bond region 508' and allows long-wavelength light to pass through the second p_i_n junction region 510, The second WSR layer 512 reflects the long wavelength light back to the second pin bond region 5 10 and has a low resistance to facilitate current flow to the second WSR layer 512. In one embodiment, the second WSR layer 512 has a high film conductivity and a low refractive index for high film reflectivity and a low contact resistance with the second TCO layer 122. Therefore, the formation has low contact with adjacent layers. a second WSR layer 512 having a low refractive index and a high reflectivity. In this embodiment, the second WSR layer 512 comprises a carbon-doped n-type germanium alloy layer (SiC). The η-type yttrium oxynitride (Si〇N) layer is high. In some cases, the first WSR layer 112 or the second WSR layer 512 is composed of an n-type SiON layer. 'The refractive index of the n-type Si〇N layer is generally lower than that of the n-type SiC layer. In one embodiment, the first JI layer U2 has a refractive index period of from about 14 to about 4, such as about 2'. The second WSR layer 512 has a refractive index period of about! From 4 to about 4, for example, the conductivity period of the first WSR layer 112 is about 10-9 S/cm, and the conductivity period of the second WSR layer 5丨2 is about HT4 S/cm. Similar to the first round first pin junction region 126, the first p small n junction region 508 includes a p-type amorphous germanium layer 106, an intrinsic amorphous germanium layer 1〇8, and an n-type microcrystalline germanium layer 110. 3, a degenerately doped p 23 201029208 type amorphous germanium layer 502 (a heavily doped P-type amorphous germanium layer) is formed on the conductive layer 104. Further, an n-type amorphous germanium buffer layer 5?4 is formed between the intrinsic amorphous germanium layer 1?8 and the ?-type microcrystalline germanium layer. The n-type amorphous crucible buffer layer 504 is formed to a thickness of about 1 to about 2 Å. The η-type amorphous shih buffer layer 504 helps to bridge the band gap deviation between the intrinsic amorphous ruthenium layer 108 and the 11-type microcrystalline ruthenium layer 11. Therefore, the addition of the n-type amorphous hair buffer layer 504 enhances current collection, so that the battery efficiency can be improved. Similar to the second pin bonding region 128 of FIG. 1, the second pin bonding region 510 includes a p-type microcrystalline germanium layer 114 and a selective pi buffer type intrinsic amorphous germanium layer formed on the p-type microcrystalline germanium layer ι14. 116. In general, the intrinsic microcrystalline germanium layer 11 is formed on a selective p_i buffer type intrinsic amorphous germanium (PIB) layer 116, and the n-type amorphous germanium layer 120 is formed on the intrinsic type microcrystalline layer 118. Alternatively, the denatured doped n-type amorphous hair layer 406 can be formed primarily as a heavily doped n-type amorphous germanium layer to improve ohmic contact with the second TCO layer 122. In one embodiment, the heavily doped n-type amorphous germanium layer 406 has a dopant concentration of from about 1 〇 2 〇 atoms/cm 3 to about 1 〇 21 atoms/cm 3 . Figure 5 is a cross-sectional view showing a first WSR layer 112 and a second WSR layer 512 formed on a tandem junction thin film solar cell 500, in accordance with another embodiment of the present invention. In one embodiment, the first wsr layer 112 and the second WSR layer 512 are each composed of a plurality of deposited layers, such as layers 112a, 112b and layers 512a, 512b, to adjust light reflection and/or penetration to different wavelengths. Different portions of the solar cell 500 are formed. Example 24 201029208

For example, the layers 112a-b of the first WSR layer 112 may have different refractive indices to effectively reflect one or more predetermined wavelengths of light (eg, short wavelength to intermediate wavelength) and allow other wavelengths to penetrate (eg, intermediate wavelength to long wavelength). ). The wavelength that penetrates each of the layers 112a-b can then be reflected back to the second p_i_n junction region 510 by the second WSR layer 512. By selectively adjusting the refractive indices of the layers of the wsr layers 112 and 512, respectively, the light of different wavelengths can be selectively reflected or penetrated, so that the incident light of the predetermined area of the solar cell is absorbed to a maximum value to improve current generation and solar cells. effectiveness. Although the 5B diagram shows that the WSR layers 112, 512 each comprise a two-layer configuration, this configuration is not intended to limit the scope of the invention described herein, and is merely used to generally refer to a configuration in which the WSR layer comprises two or more stacks. Figure 6A depicts the construction of two or more stacked layers, which will be further described below. In one embodiment, adjacent layers of layers 112a-b, 5 12a-b are configured with high refractive index contrast and different thicknesses. Included in layer U2a b, "high refractive index contrast and different thicknesses of the various layers of xanthene help to adjust the optical properties of the formed layers U2a-b, 512a_b. In one embodiment, layers U2a-b, 512a_b are arranged for phase The adjacent layers (such as the n-type layer ιι, the p-type layer 114, and the second butyl layer 122) also have a high refractive index contrast. In general, the 'refractive index (four) map describes the degree of the difference between the adjacent layers (four) Usually expressed as a refractive index ratio, the low refractive index contrast means that the difference in refractive index between adjacent layers is small, and the high refractive index contrast represents a large difference in refractive index of adjacent materials. In the example - the optical arrangement of 'configuration layer 112', 5 (10) Nature to reflect and penetrate different wavelengths of light. The layers ma-b, 512a_b are arranged in an embodiment to reflect light having a wavelength of from about 55 Gnm to about (iv) 25 201029208. In one embodiment, the first WSR layer 112 is configured to reflect light having a wavelength of from about 550 nm to about 800 nm while the second WSR layer 512 is configured.

To reflect light having a wavelength of about 700 nm to about ΐι〇〇ηη. In one embodiment, the first layer 112a is configured with a low index of refraction and the second layer U2b is configured with a high index of refraction. For example, the material selected for the first layer 112a (e.g., SiC, Si〇x, Six〇yNz) has a lower refractive index than the material selected for the second layer U2b (e.g., si). The thickness of the first layer ma is configured to be thicker than the second layer 1121). In one embodiment, the refractive index ratio (second layer index / first layer index of refraction) of the second layer 112b to the first layer 112a is controlled to be greater than about 12, such as greater than about 1.5. In one embodiment, the refractive index of the first layer 112a is from about 1 4 to about 2.5, and the refractive index of the second layer i12b is from about 3 to about 4. The thickness ratio (first layer thickness / second layer thickness) of the first layer 112a to the second layer 112b is controlled to be greater than about 1 · 2 ', for example, greater than about 1.5. In one embodiment, the first layer 112a is an n-type microcrystalline bismuth alloy layer having a thickness of from about 75 A to about 75 Å, and the second layer U2b is an n-type microcrystalline layer having a thickness of from about 5 Å to about 500 Å. However, other techniques can be used to change the optical properties of the layer (ie, except that the thicknesses of the alternating first layer 112 & and second layer 112b are changed to λ/4η (Μ) and X/4n (Si alloy), respectively). By forming the first layer 112a and the second layer 112b, or a series of repeating interfaces at which the refractive index is discontinuous, the first layer and the second layer can change the optical properties of the overall layer structure, thereby forming a high reflectance and an acceptable absorption loss. Periodic structure. In the embodiment, H ma is an n-type microcrystalline germanium alloy layer (e.g., Sic or layer) having a thickness of about 450 A, and the second layer 112b is a germanium-type microcrystalline dream layer having a thickness of about 300 Å. Likewise, the second wsr 26 201029208 layer 512 can be similarly configured such that the first layer 512 & and the second layer 51 have a refractive index contrast and a different thickness. As can be understood, the second wsr layer 512 can also be configured similar to the first WSR layer 112, so the second WSR layer 5 1 2 ' will not be described herein to simplify the description. Figure 5B shows only a pair of bilayers, such as a first layer 112& and a second layer 112b. Note that the first layer U2a and the second layer are repeatedly formed a plurality of times to form a first multilayer stacked structure which constitutes the WSR layer 112 as shown in Fig. 6A. In one embodiment, the first WSR layer ι2 includes a plurality of pairs of first layers 112al, 12a2, 112a3 and second layers 112b1, U2b2, 112b3. In one embodiment, Figure 6A shows that the three pairs of first and second layers, each of the first layer 112al-3 and the second layer 112b 1-3, may have different refractive indices and different thicknesses. For example, the refractive index ratio of the second layer 112b1 of the first pair of layers 112al, 112b1 to the first layer 112al is greater than about i2, such as greater than about 1.5. In contrast, the first pair of layers U2al, 112A may have a thickness ratio of the first layer 112al to the second layer ii2b1 greater than about 丨2, such as greater than about 1.5. The refractive index ratio of the second pair of layers 112a2, U2b2 may be higher or lower than the first pair of layers 112al, 112bl to assist the first WSR layer 112 in reflecting light. Further, the refractive index comparison of the third pair of layers 112a3, 112b3 may be lower or lower than the first pair of layers 112al, 112b1 and the second pair of layers U2a2, U2b2. In an embodiment, the first WSR layer 112 can have three pairs of layers U2a, 112b formed therein. In another embodiment, the first WSR layer 具η has up to five pairs of layers 112a, 112b. In yet another embodiment, the first WSR layer 112 has more than five pairs of layers U2a, 112b as desired. Alternatively, the first 27 201029208 pair of layers 112al, 112bl, the second pair of layers U2a2, U2b2, and the third pair of layers 112a3, 112b3 may comprise pairs of repeating pairs having similar refractive index contrast and thickness variations. By adjusting the period and refractive index ratios, the reflection of a particular wavelength can be optimized to produce a predetermined wavelength selective reflector. In one embodiment, the first layer 112al of the first pair of layers has a refractive index of about 2.5 and a thickness of about 15 Å, and the second layer has a refractive index of about 3.8 and a thickness of about 100 Å. The first layer 112a2 of the second pair of layers has a refractive index of about ❹2.5 and a thickness of about i5〇A, and the second layer of the second pair of layers U2b2 has a refractive index of about 3.8 and a thickness of about ΐοοΑ. The first layer U2a3 of the third pair of layers has a refractive index of about 2.5 and a thickness of about 150 A. The second layer mb3 of the third pair of layers has a refractive index of about 3.8 and a thickness of about 100 A. In one example, the first WSR layer 112 The total thickness is controlled to be about 75 〇A. Figure 6B illustrates another configuration of the WSR layer 112 that can be used to improve light reflection, current collection, and light transmission. In this particular embodiment, the wsr layer 112 comprises one or more insulating layers, such as layers having a low refractive index as shown in Figure 6B, such as Si, Si 〇 2, SiON, SiN, and the like. The dopant or alloying elements used to form the WSR layer 112 improve the film conductivity, but do not increase the absorption loss, thereby reducing the light reflectivity and transmittance between the different bonding faces forming the solar cell. Therefore, in an embodiment, the vias 6〇2 or the array of features, trenches or patterned regions are formed in the WSR layer 112 to allow a subsequent layer of higher conductivity (such as the component symbol 114) to form a series of The shunt path 6〇28 passes through the |811 layer 112, which carries most of the generated current. The WSR layer 112 and a series of formed shunt paths 602A - and used to weigh the predetermined optical properties of the WSR layer 112 - also reduce the series resistance across the WSR layer (e.g., traverse layer thickness) using the formed shunt path 6 〇 2A. This configuration is beneficial in the case where U2 contains one or more high resistance layers or dielectric materials, which are primarily required for optical properties (e.g., reflection and/or transmission). ❿ In one example, the WSR layer comprises an insulating layer having a low refractive index, such as less than two. Next, the insulating buy 8-foot layer 112 is patterned to form an array of holes, trenches, slits or other shaped openings in the insulating wsr layer 112. In general, the array of perforations 602 has sufficient density and size (e.g., diameter) to reduce the average resistance across the WSR layer 112 to a predetermined value while the read WSR layer maintains its predetermined optical properties. The patterning process and the patterning chamber suitable for the patterning process will be detailed later in conjunction with Figure 9. In one example, the vias 602 are filled with a P-type microcrystalline germanium layer 114 deposited on the insulating layer 112 to form a shunt path 6〇8. In this configuration, one or more layers of optical properties within the job layer 112 can be obtained by selecting the job layer ι2 having a low refractive index. At the same time, by filling the formed vias with the p-type microcrystalline layer 114, the average resistance across the layer 112 can be reduced, thereby improving the optical properties of the average patterned layer 112: and the average electrical and efficiency of the solar cell device. . In the 'insulated WSR layer 112 is an in-layer. In the embodiment, the tandem and/or triple joint faces are of the type of alloy material. For example, in the embodiment, each layer of the one or two junction regions may use carbon as an alloy material; and each layer of the 1 junction region includes a coffin containing '-p, and the junction is in the first, 5A-B diagram 29 201029208 In the example, the crystalline alloy WSR layer 112 comprises an alloy of stone and carbon, and the layers of the first and second pin junctions 126, 128, 5, 8, 51 are comprised of tantalum and recorded alloys, and vice versa. Finally, the first and fifth A-B embodiment examples also include variations of the intrinsic layer non-alloy layer. For example, in an alternative embodiment of Figures 1, 5 A_B, 'layers 1, 8 and 118 are intrinsic microcrystalline layers, rather than alloy layers. This variation expands the absorption characteristics of the battery and enhances its charge separation capability. EXAMPLES A single junction solar cell constructing a 280-type n-type microcrystalline niobium carbide layer exhibits a short circuit current (Jsc) of 13.6 mA/cm 2 (eg, a quantum efficiency (QE) measurement of 13.4 mA/cm 2 ) The fill factor (ff) was 73.9% and the conversion efficiency (CE) was 9.4%. In comparison, a similar battery using microcrystalline stone was used to exhibit Jsc of 13.2 mA/cm2 (e.g., QE measurement was 13.0 mA/cm2), FF was 73.6%, and CE was 9.0%. In a further comparison, a similar cell using a 280A n-type amorphous tantalum layer (80A of which is denatured) exhibits a Jsc of 13.1 mA/cm2 (as measured by QE of 12.7 mA/cm2), an FF of 74.7%, and a CE of 9.0. %. The tandem junction solar cell was constructed to have an n-type bottom cell layer comprising 270A of microcrystalline niobium carbide and an n-type top cell layer comprising n-type amorphous fractures of ιοοΑ and n-type microcrystalline niobium carbide of 250 Å. The bottom cell exhibited a Jsc of 9.69 mA/cm2 and a qe of 58% at a wavelength of 700 nm. The top cell exhibited a Jsc of 10.82 mA/cm2 and a QE of 78% at a wavelength of 500 nm. Another tandem solar cell is constructed with an n-type bottom cell layer comprising a 270A n-type microcrystalline carbonization dream, and an n-type top comprising a 5 η n-type amorphous 30 201029208 dream and 250A n-type microcrystalline niobium carbide Battery layer. The bottom cell exhibited a Jsc of 9.62 mA/cm2 and a QE of 58% at a wavelength of 700 nm. The top cell exhibited a Jsc of i〇.86niA/Cm2 and a QE of 78% at a wavelength of 50 〇 nm. In contrast, the tandem junction solar cell is constructed with an n-type bottom cell layer containing 27 Åa » of n-type microcrystalline niobium carbide, and a denaturing doping of η-type amorphous yttrium containing 90 〇〇A and 90 ( ( N-type) amorphous n-type top cell layer. The bottom cell exhibited a φ Jse of 9.00 mA/cm 2 and a QE of 53% at a wavelength of 700 nm. The top cell exhibited a Jsc of 10.69 mA/cm2 and a QE of 6% at 5 〇 Onm wavelength. The use of tantalum carbide improves the absorption of the secondary battery, especially the bottom battery. System and Apparatus Construction Figure 7 is a cross-sectional view of one embodiment of a plasma enhanced chemical vapor deposition (PECVD) chamber 700. One or more layers of films used to deposit thin film solar cells (e.g., solar cells of Figures 1 - 4). Suitable plasma enhanced chemical vapor deposition chambers are available from Applied Materials, Inc., located in Santa Clara, California. It should be understood that other deposition chambers, including those provided by other manufacturers, may also be used to practice the invention. The chamber 700 generally includes a wall 702, a bottom 7〇4, a showerhead 710, and a substrate support 73 0' defining a custom path volume 706. The process volume can be accessed via valve 708 to transfer substrate into and out of chamber 7〇〇. The substrate support member 73 includes a substrate receiving surface 732 for supporting the substrate and a handle shielding ring 733 coupled to the lifting and lowering system 736 for lifting and lowering the substrate member 73 选择性 selectively placed over the periphery of the substrate 1〇2. The lift pins 8 are movable through the substrate support 730, thereby moving the substrate into and out of the substrate receiving surface 31 201029208 732. The substrate support 73 further includes heating and/or cooling elements to maintain the substrate support 730 at a predetermined temperature. The substrate support 73A also includes a grounding strip 731' to provide rf grounding around the substrate support 73A. The showerhead 710 is coupled to the periphery of the backing plate 712 by a suspension device 714. The showerhead 710 also couples the backing plate with one or more central supports 716 to prevent cornering and/or control the trueness/curvature of the showerhead 710. The gas source 720 is coupled to the backing plate 712' to provide gas through the backing plate 712 and through the showerhead 710 to the substrate receiving surface 732. The vacuum pump 709 is coupled to the chamber 700 to control the process volume 7 〇 6 to a predetermined pressure. The RF power source 722 is coupled to the backplane 712 and/or the showerhead 71A to provide the power of the showerhead 71〇rf, and an electric field is generated between the showerhead and the substrate support 73, such that the gas will be in the showerhead. A plasma is generated between the 71 turns and the substrate support 730. Various RF frequencies can be used, for example, about 3 megahertz (MHz) to about 2 〇〇 MHz. In one embodiment, the RF power source is used at a frequency of 13 56 MHz. A remote plasma source 724, such as an inductively coupled remote plasma source, can also be coupled to the helium source and the backplate to provide a clean gas to the remote source 724' to generate remote power. The slurry is used to clean the chamber components. The RF power source 722 supplied to the showerhead further energizes the cleaning gas. Suitable cleaning gases include, but are not limited to, nitrogen trifluoride (Νί?3), fluorine (1?2), and sulfur hexafluoride (SF0). The method of depositing one or more layers (e.g., one or more layers of Figure 4) includes the deposition parameters of the chamber or other suitable chamber as described in Figure 6 below. A substrate having a surface area of 10000 cm 2 or more (preferably 4 〇〇〇〇 cm 2 or more, more preferably 55 〇〇〇 Cm 2 or more) is supplied to the chamber. When understood, the base 32 201029208 plate can be cut into smaller solar cells. In one embodiment, the heating and/or cooling element 739 is configured to provide a substrate support temperature of about 400 〇 c or less, preferably from about 1 ° C to about 400 ° C, more preferably about 150. (: to about 3 〇〇〇 c, for example about 2 〇〇 t: During deposition, the distance between the top surface of the substrate placed on the substrate receiving surface 732 and the shower head 710 is about 4 mils to about 12 Preferably, the mil is from about 400 mils to about 800 mils. Φ Figure 8 is a top plan view of one embodiment of a processing system 8 having a plurality of processing chambers 83 1-837, such as the PECVD chamber of Figure 7. The chamber 7 or other chamber beta processing system 8 that is suitable for depositing the diaphragm includes a transfer chamber 820' which is lightly coupled to the load lock chamber and handles the chamber load lock to 810 to allow the substrate to be external to the system and to the transfer chamber 82〇 is transferred between the vacuum chambers within the processing chambers 831-83. The load lock chamber 810 includes one or more evacuation regions to support one or more substrates. When the substrate is introduced into the system 80, evacuation is performed. The area is vented when the substrate is output from the system 800. The transfer chamber 82 is provided with at least one vacuum robot 822' adapted to transfer the substrate between the load lock chamber 810 and the processing chambers 831-837. Although Figure 8 shows seven Processing chamber, however, this configuration does not limit the scope of the invention 'system can be set Any suitable number of processing chambers. In some embodiments of the invention, system 8 is configured to deposit a first pin bond region (e.g., component symbols 126, 328, 508) of a plurality of bonded surface solar cells. Wherein one of the processing chambers 831-837 is configured to deposit a p-type layer of the first p_i-n junction region while the respective configuration 33 201029208 remaining processing chamber 831·837 μ is integrated with the f-type layer and the n-type layer. — The intrinsic layer and the n-type layer of the pi-n junction region do not require any passivation process between the deposition steps of the same-chamber deposition. Therefore, in the configuration, the substrate is locked by the load 81Λ * ^ rail collar The system enters the system by 810, and then the vacuum robot transmits (4) (4) the core (4) Ρ (4) W processing chamber. After forming the p-type layer, the vacuum robot then transfers the substrate to the remaining processing chambers configured to deposit the intrinsic layer and the n-type layer. One of the chambers. After forming the intrinsic layer and the n-type layer, the jade vacuum robot 822 transfers the substrate back to the load lock to 81 G. In some embodiments, the processing chamber processes the substrate to form a crucible. Type of layer The time between forming the intrinsic layer and the n-type layer is about 4 times or more, preferably 6 times or more faster than a single chamber. Therefore, in some system examples in which the first Ρ-"η junction region is deposited, Ρ The ratio of the chamber to the i/n chamber is 1:4 or above, preferably 1:6 or above. The system yield including the plasma cleaning processing chamber time is about ι 基板 substrate / hour or more. Preferably, 20 substrates per hour. In some embodiments of the invention, the system 800 is configured to deposit a plurality of junction regions of the plurality of junction solar cells (e.g., component symbols 128 330, 51A). In an embodiment, One of the processing chambers 831-837 is configured to deposit a P-type layer of the second bonding region while the remaining processing chambers 831-837 are each configured to deposit the present f-type layer and the n-type layer. The intrinsic layer and the n-type layer of the second ... junction region may be subjected to no passivation process between the deposition steps of the same chamber. In some embodiments the processing chamber is processed to the substrate to form? The time of the layer is approximately four times or more faster than the time at which the single chamber forms the intrinsic layer and the n-type layer. Thus, 34 201029208 In certain embodiments of the system for depositing the p-i-n junction, the ratio of the p-chamber to the i/n chamber is 1:4 or more, preferably 1:6 or more. Including the provision of electric excitation: the system yield of the process chamber is about 3 substrates / small

Hour or above, I A is preferably 5 substrates/hour. In the present invention, in some embodiments, the system 8 is configured to deposit the WSR layers U2, 5i2 of Figures 1 and B, which may be placed in the first and second p-sm junction regions or 篦- . ,

Between the coin-P-n junction and the second TCO layer. In one embodiment, one of the processing chambers 83 1-837 is configured to deposit one or more WSR layers, and another processing chamber 83 1-837 is configured to deposit a P-type layer of the second pin-to-zero region, while The remaining processing chambers 831-837 are each configured to 'integrate the intrinsic layer and the n-type layer. The number of chambers configured to deposit the WSR layer is similarly configured to deposit the number of chambers of the ruthenium layer. Additionally, the WSR layer can be deposited in the same chamber configured to deposit the intrinsic layer and the n-type layer. In certain embodiments, the throughput of the system 8〇〇 configured to deposit a first pin junction region comprising an intrinsic amorphous germanium layer is a system 800 for depositing a second pin junction region comprising an intrinsic microcrystalline germanium layer This is twice the yield due to the difference in thickness between the intrinsic microcrystalline layer and the intrinsic amorphous layer. Thus, a single system 800 suitable for depositing a first pin junction region comprising an intrinsic amorphous germanium layer can be matched to two or more systems suitable for depositing a second p-i_n junction region comprising an intrinsic microcrystalline germanium layer. . Thus, the WSR layer deposition process can be performed in a system suitable for depositing the first ρ·1·η junction region to effectively control throughput. Once the first ρ·ί_η junction region is formed in a system, the substrate can be exposed to the surrounding environment (i.e., vacuum) and transferred to the first system to form a second p-i-n junction. First System Deposition - 35 201029208 A wet or dry cleaning substrate is required between the p-i-n junction and the second p-i-n junction. In one embodiment, the WSR layer deposition process is deposited in individual systems. Figure 9 illustrates a configuration of a portion of a production line 900 having a plurality of deposition systems 904, 905, 906 or cluster tools that are transferred by an automation device 902. In one configuration, as shown in Figure 9, line 900 includes a plurality of deposition systems 904, 905, 906 for forming one or more layers, forming a p-i-n junction or forming a complete solar cell device onto substrate 102. The systems 904, 905, 906 are similar to the system 800 of Figure 8, but are generally configured to deposit different layers or landings onto the substrate 102. In general, systems 904, 905, 906 are each provided with load locks 904F, 905F, 906F that are similar to load lock chamber 810 and are each coupled to automation device 902. During processing, the substrate is typically transferred from system automation device 902 to one of systems 904, 905, 906. In one embodiment, system 906 is provided with a plurality of chambers 906A-906H each configured to deposit or process one or more layers that form a first pin junction, and system 905 having a plurality of chambers 905A-905H Configuring to deposit one or more WSR layers, system 904 having a plurality of chambers 904A-904H configured to deposit or process one or more layers that make up the second pin junction. Note that the number of systems and the number of chambers in each system configured to deposit layers can be varied to meet different process requirements and configurations. In one embodiment, the WSR layer deposition processing chamber and the p-type, intrinsic or n-type layer deposition chamber are separated or isolated to avoid one or more layers of cross-contamination of the solar cell device or subsequently formed solar cell device. In configurations where the WSR layer comprises a carbon or oxygen containing layer, avoiding the contamination of the enamel layer that constitutes the junction zone and/or preventing the formation of oxygen or 4 deposits on other chamber components of the shielding or processing chamber. The stress of the material layer causes the problem of particle generation to be substantially important. The automation device 902 typically includes a machine or conveyor adapted to: • move and position the substrate. In one example, the automation device 902 is a series of conventional substrate conveyors (eg, roller conveyors) and/or machine devices (eg, 6 pumping robots, horizontal articulated robots (SCARA)) configured to Φ Requires moving and positioning the substrate on the 90-inch production line. In one embodiment, the one or more automation devices 9〇2 further comprise one or more substrate lifting members or suspension bridges for allowing the substrate upstream of the predetermined system to pass through the substrate that blocks its movement against the other of the production line 900. a predetermined location. As such, substrate movement of different systems will not be hindered by other substrates to be transferred to another system. In one embodiment of the production line 900, the patterning chamber 95 is coupled to one or more automated devices 902 and configured to perform a patterning process to form one or more layers of the WSR layer. In one example, the patterning chamber 950 advantageously provides one or more layers of the patterned process wsr layer by conventional means. The patterning process is used to form a patterned region of the WSR layer, such as hole 6 〇 2 formed in insulating WSR layer 112 in Figure 6B. It is also understood that the patterning process can also be used to etch one or more regions of a previously formed layer during the solar cell device formation process. Typical processes for forming the vias 602 include lithographic patterning and dry etching techniques, laser lift-off techniques, patterning and wet etching techniques, or other similar processes used to form predetermined patterns in the WSR layer 112, but not Limited to 37 201029208. The array of perforations 6〇2 formed in the WSR layer 112 typically provides regions to electrically connect the layers formed on the WSR layer 112 to the layers formed under the layers. Although the configuration of the patterning chamber 950 is generally described for the surname process, this configuration does not limit the scope of the present invention. In one embodiment, the @案化 cavity 950 is used to remove - Or one or more regions of the plurality of formed layers, and/or one or more layers of material (e.g., containing a dopant material) to one or more of the layers formed on the surface of the substrate. In one embodiment, the vias 6〇2 are etched into the WSR layer 112 using a deposition pattern etch process. The deposition pattern etch process generally deposits a predetermined pattern of silver etched material onto the surface of the substrate 102 to match the predetermined configuration of the vias 602 formed in the WSR layer 112. In an embodiment, in the patterning chamber 950, the etching material is selectively deposited onto the wsr layer π 2 using conventional ink jet printing apparatus, offset printing apparatus, or the like. In one embodiment, the etch material comprises ammonium fluoride (NH4F), a solvent that forms a homogeneous mixture with ammonium fluoride, a pH adjuster (such as oxide etch buffer (BOE), hydrofluoric acid (HF)), and an interface. Active agent / humectant. In one example, the etch material comprises 20 grams of ammonium fluoride (mixed with 5 milliliters (m) of dimethylamine) and 25 grams of glycerol, which is then heated to 1 ° C until the mixture The pH reaches about 7 and forms a homogeneous mixture. The advantage of using an alkaline chemical is that it does not generate volatile HF vapor before it begins to drive out ammonia after subsequent heating, so there is no need for expensive and complicated ventilation and treatment systems before the heating process. After depositing the etching material of the predetermined round, then in the patterning chamber 95〇38 201029208, 'using a conventional infrared (IR) heating element or an Ir lamp to heat the substrate up to about 200 C -3 00 ° C 'in the residual material The chemical is surnamed WSR layer 112 to form perforations 602. As shown in Fig. 6B, the via 602 serves as an opening of the WSR layer 112, whereby the layer formed under the WSR layer 112 is in contact with the layer deposited on the WSR layer 112. In one embodiment, the perforations 6〇2 of the surface of the substrate have a diameter of from about 5 microns (μηι) to about 2 μm. After a period of treatment at a predetermined temperature (e.g., about 2 minutes), the volatile φ etch product will be removed leaving a clean surface in the via 602, thus forming a reliable electrical contact in these regions. In one aspect, the process and etchant formulation can form vias 602 in the WSR layer 112 without any post-cleaning process, which removes the etch products and residual etch materials by volatilization, leaving A clean surface is provided for the second pin land 510, 128 to be formed thereon. In some cases, the wet processing step is avoided to avoid increasing the time required to rinse and dry the substrate, increasing the cost of ownership associated with performing the seating process, and increasing the chance of oxidizing or contaminating the through hole 602. In an embodiment, the patterning chamber 950 or other attachment processing chamber is adapted to perform a selective cleaning process to remove any improper residue, and/or in the second p_i_n junction 51, 128 Formed on the front to form a passivated surface. In one embodiment, the cleaning process is performed by wetting the substrate with a cleaning solution. Wetting can be achieved by spraying, submerging, dipping or other suitable technique. An example of a process for forming a pattern of etched material for forming one or more perforations 602 is described in more detail in the application for co-transfer and U.S. Patent Application Serial No. 12/274,023 (Attorney Docket No. APPM 12974.02), PCT 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The scope is subject to the definition of the scope of the patent application attached. For example, Figure 7 handles the cavity until the display is horizontal. It should be understood that in other embodiments of the invention, the processing weave may be in any non-horizontal position, such as vertical. Embodiments of the present invention have been described with reference to the multiple processing chamber clustering tools of Figures 8 and 9, but an in-line system and a hybrid in-line/cluster system may also be employed. Embodiments of the present invention have referenced a first system configured to form a first pin bond zone, a second system configured to form a WSR layer, and a third system configured to form a second p-i_n junction zone, but A p-n junction region, a WSR layer, and a second pin junction region can also be formed in a single system. Embodiments of the present invention have been described with reference to a processing chamber suitable for depositing a WSR layer intrinsic layer and an n-type layer, although individual chambers are also suitable for depositing an intrinsic layer, an n-type layer, and a WSR layer, and a single processing chamber is also Suitable for deposition of ® P-type layers, WSR layers and intrinsic layers. Finally, the embodiments are p_i_n configurations that are commonly applied to transparent substrates such as glass, but this is encompassed by other embodiments in which the nip junction, single or multiple stacked structures are constructed in an opposite deposition sequence on an opaque substrate (such as stainless steel or [beta] on the polymer thus proposes an apparatus and method for forming a WSR layer of a solar cell device. The method facilitates the fabrication of a WSR layer placed between the joint faces, which has high transparency and low refractive index to enhance light capture of the battery. In addition, the WSR layer provides an adjustable bandgap that effectively reflects or absorbs light of different wavelengths compared to conventional methods, thereby increasing the photoelectric conversion of PV solar cells. 201029208 Efficiency and performance. While the present invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Φ In order to make the above-described features of the present invention more obvious and understandable, it can be explained in conjunction with the reference embodiment. 1 is a side view of a tandem junction surface thin film solar cell having a wavelength selective reflective layer interposed between bonding surfaces according to an embodiment of the present invention; and FIG. 2 is a single bonding surface thin film solar cell according to an embodiment of the present invention. FIG. 3 is a side view of a tandem junction surface thin film solar cell having a wavelength selective reflective layer interposed between bonding faces; FIG. 4 is a view of another embodiment of the present invention. Side view of a tandem junction surface thin film solar cell; FIG. 5-5 is a side view of a tandem junction surface thin film solar cell having a wavelength selective reflective layer interposed between bonding faces, according to an embodiment of the present invention, 6 is an enlarged view of a wavelength selective reflection layer disposed between joint surfaces according to an embodiment of the present invention; FIG. 7 is a cross-sectional circle of the apparatus according to an embodiment of the present invention; 201029208 FIG. 8 is another diagram according to the present invention A plan view of an apparatus of an embodiment; and a ninth drawing of a plan view of a portion of a production line according to an embodiment of the present invention. To facilitate understanding, the same component symbols in the various figures represent similar components as much as possible. It is to be understood that the elements and features of a particular embodiment can be incorporated in other embodiments and are not described in detail herein. Φ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 example. [Main component symbol description] 100 solar cell 101 solar light 102 substrate 104, 122 TCO layer 106, 108, 110, 114, 118, 120' 124 Dream layer 112 WSR layer 112a-b, 112al-3, 112bl-3 layer 116 PIB layer 124 Back layer 126, 128 Bonding area 201 Substrate 204, 218 Conductive layer 206 Alloy layer 208 '212 ' 214 矽 layer 210 PIB layer 220 Bonding area 300 Solar cell 301 Substrate 304 Conductive layer 42 201029208

306 '308, 318, 324 alloy layer 310, 320 PIB layer 312, 314, 322 316 WSR layer 326 contact layer 328 '330 junction area 400 solar power 402 substrate 404 alloy layer 406 layer 500 solar cell 502 layer 504 buffer Layer 508 ' 510 Junction Area 512 WSR Layer 512a-b Layer 602 Perforation 602A Path 700 Chamber 702 Wall 704 Bottom 706 Process Volume 708 Valve 709 Pump 710 Sprinkler 712 Back Plate 714 Suspension Device 716 ' 730 Support 720 Gas Source 722 Power Source 724 Plasma Source 731 Grounding Strip 732 Substrate Receiving Surface 733 Shadowing Ring 734 Handle 736 Lifting System 738 Lifting Pin 739 Heating/Cooling Element 800 System 810 Load Locking Chamber 820 Transfer Chamber 822 Robot 831 -837 Processing Chamber 900 Production Line 902 Automation 904-906 Deposition System 43 201029208 Chambers 904A-H, 905A-H, 906A-H, 950 904F, 905F, 906F Load Lock

44

Claims (1)

201029208 VII. Patent application scope: κ An optoelectronic device comprising: a reflective layer disposed between a first pin junction region and a second pin junction region, wherein the reflective layer comprises: a first layer; and a second A layer 'on the first layer' wherein a ratio of a refractive index of the second layer to the first layer is greater than about 12. 2. The photovoltaic device according to claim 1, wherein: the first pin junction region comprises: a P-type amorphous stellite layer; an intrinsic amorphous ruthenium layer; and an n-type microcrystalline layer And the second pin bonding region comprises: a P-type doped microlithic layer disposed on the second layer; an intrinsic microcrystalline germanium layer; and an n-type doped amorphous germanium layer adjacent to the Intrinsic microcrystalline layer. 3. The photovoltaic device of claim 4, wherein a thickness ratio of the first layer to the second layer is greater than about 1.2. 4. The photoelectric device as described in the scope of the patent application, further comprising: a second pair of layers, comprising: . 45 201029208 Four layers and the first layer are disposed on the second layer, wherein the second layer has a refractive index ratio greater than about 12; and a layer is disposed on the third layer, wherein the refractive index ratio of the first layer is greater than, I.2; and a second pair of layers comprising: a fifth layer 'on the fourth layer, wherein the fifth layer has a refractive index ratio greater than about (1) and the layer L, layer ' is placed on the fifth layer, wherein a ratio of the refractive index of the sixth layer to the first layer is greater than about 1.2. 5' The photovoltaic device of claim 1, wherein a refractive index of the second layer is greater than a refractive index of the first layer. 6. The photovoltaic device of claim 1, wherein the reflective φ layer selectively reflects light having a wavelength of from about 500 nanometers (nm) to about 800 nm. 7. The photovoltaic device of claim 1, wherein the first layer is an n-type microcrystalline germanium alloy layer. 8. The photovoltaic device of claim 1, wherein the second layer is an n-type microcrystalline germanium layer. 9. The photovoltaic device of claim 1, wherein the first layer comprises germanium, oxygen, and an element selected from the group consisting of nitrogen and carbon. The photovoltaic device of claim 1, wherein the first layer has a refractive index of from about 1.4 to about 2.5 and the second layer has a refractive index of from about 3 to about 4. U· An optoelectronic device comprising: „the shot layer is disposed between the first pin junction region and a second pin junction region and includes a plurality of perforations, wherein each of the plurality of perforations passes through the The second p_i_n junction region is formed on the reflective layer to remove a portion of the material of the reflective layer. The photovoltaic device of claim U, wherein at least the second p-i_n junction region is filled The photovoltaic device of claim 11, wherein the first p-i_n junction region comprises: a P-type amorphous germanium layer; an intrinsic amorphous germanium layer; An n-type microcrystalline germanium layer; and the second pin bonding region comprises: a P-type doped microcrystalline dream layer disposed on the reflective layer; an intrinsic microcrystalline germanium layer; and - an n-type doping layer A crystalline germanium layer adjacent to the intrinsic microcrystalline germanium layer. The solar photovoltaic device of claim f, wherein the reflective layer comprises germanium, oxygen, and an element selected from the group consisting of nitrogen and carbon. 15. If the patent application scope is item u The photo-electric layer includes a first layer and a second layer disposed on the first layer, wherein a refractive index ratio of the second layer to the first layer is greater than about 12 16. A method of forming a solar cell device, the method comprising the steps of: forming a first pin bond region onto a surface of a substrate; forming a first reflective layer onto the first p-Un junction region, Wherein the first reflective layer selectively reflects light having a wavelength of about 550 nanometers (nm) to about 8 〇〇 nm back to the first pin bonding region; and forming a second pin bonding region to the first reflective layer The method of claim 16, further comprising the steps of: forming a first reflective layer onto the second pin bonding region; and forming a transparent conductive layer onto the second reflective layer. 18. The method of claim 17, wherein the second reflective layer reflects light having a wavelength of from about 700 nanometers (nm) to about 丨丨〇〇nm back to the second pin junction. 201029208 19. If the application of the patent scope of the 16th layer contains - n-type microcrystalline alloy, wherein the first anti-parameter The refractive index of the radiation layer described in claim 16 of the patent application is from about 14 to about 4. The method, wherein the first anti-21. The method of the patent application scope c ^ 乐 Le 1 & item, wherein the step of forming the reflective layer further comprises the following steps: forming a first layer and - The second layer to the 篦_Λ· _ Α ρ, the junction region, wherein the ratio of the second layer to the first refractive index is greater than about 12. 22. The method described in claim 21 is a a type of microcrystalline bismuth alloy layer, the second layer comprising - a first layer of the first layer of n-type microcrystalline dream layer. 23. The method of claim 21, further comprising: forming a second pair of the first layer and the second layer to the first pair and forming a third pair of the first layer The method of claim 14, wherein the step of forming the first pin bonding region comprises the steps of: forming a p-type amorphous germanium layer; 49 201029208 Forming " an intrinsic amorphous sarcophagus® ZS 4 layer to the P-type amorphous yttrium layer, wherein the intrinsic amorphous stellite layer β 一 一 ρ-1 buffering essential amorphous a germanium layer and a bulk intrinsic amorphous germanium layer; and a < η type microcrystalline germanium layer to the intrinsic amorphous germanium layer, and forming the second pin junction region comprises: r forming a p-type microcrystalline germanium And forming an intrinsic microcrystalline germanium layer onto the p-type microcrystalline germanium layer; and forming an n-type amorphous germanium layer onto the intrinsic microcrystalline germanium layer. 25. The method of claim 16, further comprising the step of: forming a plurality of perforations in the reflective layer, wherein the perforations are formed on the reflective layer before the second pi-n junction region is formed Formed, and each perforation is formed by removing a portion of the reflective layer. Lu 26. An automated and integrated system for forming a solar cell, comprising: a first deposition chamber adapted to deposit a p-type germanium-containing layer onto a surface of a substrate; a second deposition chamber adapted to Depositing an intrinsic germanium-containing layer and an n-type germanium-containing layer onto the surface of the substrate; a third deposition chamber adapted to deposit an n-type reflective layer onto the surface of the substrate; a patterned chamber Suitable for forming a plurality of perforations in the n-type reflective layer on the surface of the substrate; and 50 201029208 an automated transfer device adapted to be in the first deposition chamber, the second deposition chamber to the third The substrate is transferred between the deposition chamber and the patterned chamber. A battery-powered automation and integration system, package 27. for forming a solar-containing: a first cluster tool comprising: at least one processing chamber adapted to deposit a p-type germanium-containing layer onto a surface of a substrate; At least one processing chamber adapted to deposit an intrinsic germanium containing layer onto the surface of the substrate; and at least one processing chamber adapted to deposit an intrinsic germanium containing layer onto the surface of the substrate; A cluster tool comprising: at least one processing chamber adapted to deposit an n-type reflective layer onto a surface of the substrate; and an automated transport device adapted to transfer between the first cluster tool and the first cluster tool A substrate. 28. The automation and integration system of claim 27, further comprising: a third cluster tool comprising: at least one processing chamber adapted to deposit a p-type germanium-containing layer onto the surface of the substrate At least one processing chamber adapted to deposit an intrinsic niobium containing layer onto the surface of the substrate 51 201029208; and at least one processing chamber adapted to deposit an intrinsic niobium containing layer onto the surface of the substrate . 29. The automation and integration system of claim 28, further comprising: a patterned chamber to transfer the first cluster tool, the second cluster tool or the third cluster tool and The automated transport device, wherein the patterning chamber is adapted to remove a portion of the n-type reflective layer to form a plurality of perforations in the n-type reflective layer. Like 52