TW201041167A - High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells - Google Patents

Abstract

A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.

Description

201041167 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION Embodiments of the present invention generally relate to a solar cell and a method of forming the same. More particularly, the embodiments of the present invention relate to interfacial layers formed in thin films and crystalline dream solar cells. [Prior Art] 矽 Crystalline solar cells and thin film solar cells are two types of solar cells. Crystalline germanium solar cells typically use a single crystalline germanium substrate (ie, a single crystalline pure germanium substrate) or a plurality of crystalline germanium substrates (ie, polycrystalline germanium or polycrystalline germanium substrates). The substrate is modified to improve the light extraction characteristics from the circuit and to protect the element. The thin film solar cell uses a plurality of thin layers of material deposited on a suitable substrate to form one or more pn junctions. Suitable substrates include Glass, metal and polymer substrates. ❹ In order to expand the economical use of solar cells, efficiency must be improved. Solar cell performance is related to the ratio of incident radiation converted into useful energy. In order to be used in more applications, solar energy must be improved. The battery performance exceeds about 15% of the current best performance. As energy costs rise, there is an urgent need for improved thin film solar cells' and methods and devices for forming such improved thin film solar cells in a factory environment. Contents] 3 201041167 Yang Mingzhi's example provides a method for forming solar cells. Some = one form an interface layer in transparent conductive oxygen Method (TCO) between the eight IW battery junctions. The implementation of the volt-receiving element comprises: a first - called its setting on the - ke; a second (10) layer, which is disposed on the _TCO layer; And a p-type hard-containing layer formed on the second TCO layer. In another embodiment, a photovoltaic element comprises: a -TCO layer disposed on a substrate; an interface layer; And disposed on the TCO layer, wherein the interface layer is a carbon-containing P-type layer; and a -p_ type containing a layer is disposed on the interface layer. In still another embodiment, forming A method of photovoltaic element comprising the steps of: forming a first TCO layer on a substrate; forming a second TCO layer on the first TC0 layer; and forming a first "tapping surface" on the second TCO [Embodiment] Thin film solar cells are usually formed of a film or layer of many types and placed together in many different ways. Most of the films used in such elements contain a semiconductor element containing germanium. , bismuth, carbon, boron, phosphorus, nitrogen, oxygen, hydrogen, and the like. Characteristics of different membranes Including crystallinity, dopant type, dopant concentration, film refractive index, extinction coefficient, film transmittance, film absorbability and conductivity. Most of these films can be processed by chemical vapor deposition. (It may be formed by some proprietary ionization or plasma formation in 201041167.) During the photovoltaic process, charge generation is generally provided by a bulk semiconductor layer, such as a germanium containing layer. Also known as the intrinsic layer is distinguished from the various doped layers present in the solar cell. The essence a can have any desired degree of crystallinity, wherein the degree of crystallinity will affect the light absorption properties of the intrinsic layer. For example, an amorphous An intrinsic layer, such as an amorphous germanium, will substantially absorb light of a different wavelength than an intrinsic layer of different crystallinity, such as micro or nanocrystalline. Based on this, it is advantageous to use two types of layers to produce a wide range of possible absorption characteristics. Tantalum and other semiconductors can be formed into solids having various crystallinities. A solid which is substantially free of crystals is amorphous, and has a negligible, 〇 ia Eia lanthanide called amorphous yttrium. The fully crystalline lanthanide is called crystalline, polycrystalline, or single crystal ruthenium. Polycrystalline germanium is a crystalline germanium comprising a plurality of crystalline particles separated by particle boundaries. Single crystal germanium is a single crystal of germanium. A solid having a partial damage as (ie, a crystal ratio of between about 5% and about 95%) is referred to as a nanocrystal or a crystallite, and generally means that the size of the crystalline particle suspended in the amorphous phase has The solids of larger crystalline particles are called crystallites, while the solids with relatively larger particles are called nanocrystals. It should be understood that the term "crystallization" can refer to a ruthenium having a crystalline phase in any form, including single crystal and nanocrystal dreams. Figure 1 is a schematic illustration of an embodiment of a solar cell 100 facing the I-light or solar (four) 101. Solar power; also 100 includes a substrate 1〇2. - A first transparent conductive oxide (TCO) layer 104 is formed over the substrate 102. A first p_i n junction 122 is formed on the first T(3) 201041167 side. A second P-i-n junction 124 is formed over the first p_i_n junction I22, a second TC layer 118 is formed over the second p-i-n junction I24, and a metal back layer 12 is formed over the second layer [a. The substrate 1〇2 may be a glass substrate, a polymer substrate, a metal substrate, or other suitable substrate, and a plurality of films are formed thereon. The first TCO layer 104 and the second TC layer 118 may each comprise tin oxide, oxidized, indium tin oxide, cadmium stannate, combinations thereof, or other suitable materials. It is understood that the TC〇 material may additionally include Admixture and ingredients. For example, the oxidized word may further include dopants such as tin, aluminum, gallium, boron, and other suitable materials. In the embodiment, the zinc oxide contains a dopant of 5 atom% or less, and more preferably contains aluminum atom of 2.5 atom% or less. In a particular example, the substrate 102' can be provided by a glass manufacturer in which the first TC0 layer 104 has been deposited on the substrate 102. In order to improve light absorption by increasing light trapping, the substrate 102 and/or one or more films formed thereon may be selectively textured by wet, electric Q-pulp, ion and 7 or other mechanical processes. (texture). By way of example, in the embodiment of Figure 1, the first TCO layer 104 is textured to a level sufficient to cause the surface topology to be substantially transferred to a subsequently deposited film. The first pi-n junction 122 may include a p_type inclusion layer 1〇6, an intrinsic type germanium layer 1〇8 formed over the p_type germanium containing layer 106, and a layer formed thereon. The η-type containing layer 110 above the intrinsic layer 108 is provided. In a particular embodiment, the Ρ-type germanium-containing layer 106 is a p-type amorphous germanium layer having a thickness between about 60 Å and about 300 Å. In a particular embodiment, the dust layer 108 is a thickness of between about 1,500 A and about 3,50 Å A. In a particular embodiment, the Si-type layer can be formed as an n-type single crystal layer having a thickness between about 1 A and about 4 A.

The Pi η junction 124 may include a p-type smectic layer 112, an intrinsic germanium layer 114 formed over the germanium-containing germanium layer 112, and an n-type formed over the intrinsic germanium layer 114. In the embodiment of the invention, the P_type germanium-containing layer U2 is a thickness between about ιοοΑ and about 400 A. The p-type microcrystalline layer is in the embodiment. In a specific embodiment, the essence 1 is included. Layer 114 疋 - an intrinsic type of microcrystalline germanium having a thickness between about 1 G, 嶋A and about 30, () 00. In a particular embodiment, the core type bismuth layer is about 1 厚度 thick. An amorphous germanium layer between germanium and about 5 Å. The metal back layer 120 may include, but is not limited to, a group selected from the group consisting of Ag, Ti, Cr·, Au, Cu, Pt, alloys thereof, and combinations thereof. Group of materials. Other processes can be performed to form solar cells, such as laser engraving||J processes. Other films, materials, substrates, and/or packages can be provided over the metal back layer 120 to complete the solar cell. The formed solar cells can be connected to each other to form a plurality of modules, which can then be connected to form an array. The shot 101 is primarily absorbed by the intrinsic layers 108, 114 of the pin junctions 122, 124 and is converted into an electron-hole pair. The p_type layers 106, 112 are formed between the layers 110, 116 and extend across The electric fields of the intrinsic layers 108, 114 cause electrons to flow toward the n-type layers 11 〇, 丨 16 and the holes flow toward the p-type layers 106, 112, generating a current. The first 7 201041167 pin junction 122 can be - _ . An intrinsic amorphous germanium layer 108 is included, and the second P-b η junction 124 άτ iv aa J includes an intrinsic microcrystalline germanium layer 114 for

The amorphous radiation and the proud S micro-yang sand can absorb the solar radiation 101 of different wavelengths. Therefore, the formed solar cell 100 is more efficient, because it will capture most of the solar radiation spectrum. Amorphous 夕 的 曰 曰 0 0 0 曰 曰 和 和 和 曰 曰 曰 曰 曰 以 以 以 以 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 非晶 非晶 非晶 非晶The amorphous germanium has a larger energy gap than the microcrystalline germanium to stack. The solar radiation that is not absorbed by the first p_i_n junction 122 is transferred to the second p-i-n junction 124. In an embodiment in which the intrinsic germanium layer 1 is an intrinsic amorphous germanium layer, the intrinsic amorphous germanium layer 108 can be deposited by providing a gas mixture of hydrogen and germane gas. The volumetric flow ratio of hydrogen to germane is about 2〇: 1 or less. The decane gas can be provided at a flow rate between about sc5 sccm/L and about 7 sccm/L. Helium can be provided at a flow rate between about 5 sccm/L and about 60 〇 sccm/L. RF power between 15 mw/cm2 and about 250 mW/cm2 can be provided to the showerhead. The pressure of the chamber can be maintained between about 0.1 Torr and 20 Torr, such as between about 〇5 〇rr and about 5 Torr. The deposition rate of the intrinsic amorphous germanium layer 1 〇 8 will be about 100 A/min or more. In an exemplary embodiment, the intrinsic amorphous germanium layer 108 is deposited by hydrogen to decane having a volumetric flow rate ratio of about 12.5:1. In an embodiment in which the intrinsic germanium layer 114 is an intrinsic microcrystalline germanium layer, the intrinsic microcrystalline layer 114 can be formed by providing a mixture of helium gas and a gas mixture of 201041167, wherein the volume of hydrogen to germane is The flow rate ratio is between about 2 〇·· 1 and about 200:1. The decane gas can be supplied at a flow rate between about w $ w(10) and about 5 sCcm/L. Hydrogen gas can be provided at a flow rate between about 4 〇 sccm/L and about 400 Sccm/L. In a particular embodiment, the decane flow rate can be increased from a first flow rate to a second flow rate during deposition. In a particular embodiment, the hydrogen flow rate can be reduced from a first flow rate to a second flow rate during deposition. At a chamber pressure between about i τ π and about 100 ( (such as between about 3 T rrrr and about 20 Ton·, or between about 4 T 〇 rr and about 12 T 〇 rr The application of an RF power of about 3 〇〇 mW/cm 2 or more (such as 6 〇 0 mW/cm 2 or more) will be at a rate of about 200 A/min or more (such as about 5 〇〇 A/min). An intrinsic type of microcrystalline germanium layer is deposited substantially between about 20% and about 8%, such as between about 55 Å/Å and about 7.5 %. In some embodiments, it may be advantageous to increase the applied RF power from a first power density to a second power density during deposition. In another embodiment, the intrinsic microcrystalline germanium layer 114 can be deposited using a plurality of steps, wherein the portions of the layer deposited during each step have different hydrogen dilution ratios, wherein the different hydrogen dilution ratios provide deposition Different crystal ratios of the film. For example, in one embodiment, the volumetric flow rate ratio of hydrogen to decane can be reduced from 1 〇〇:1 to 95:1, to 90:1, and to 85:1 in four steps. In one embodiment, the decane gas may be provided at a flow rate between about 0.1 sccm/L and about 5 sccm/L (such as about 0.97 SCcm/L). Hydrogen may be provided at between about 20 Torr and about 20 Torr. Flow rate between 5 (^!!^ (such as between about 8〇3 (^1111 and about 9 201041167 105 SCCm/L). An exemplary process with multiple steps (eg four steps) in the deposition process) In an embodiment, the hydrogen stream may begin at about 97 Sccm/L during the first step and may be gradually reduced to about 92 sccm/L, 88 sccm/L, and 83 sccm/L, respectively, in subsequent processing steps. At a chamber pressure between about 1 T rrrr and about 100 τ ( (eg, between about 3 Torr and about 20 Ton·, such as between about 4 T rrrr and about 12 Τ〇ΓΓ Applying a power of about 300 mW/cm2 or more (such as about 490 mW/cm2) between 'such as about 9 Torr' will result in a rate of about 2 A/min or more (such as 4 A/A). Min) to deposit the intrinsic type of microcrystalline germanium. The electrical collection is generally provided by a doped semiconductor layer, such as a germanium layer doped with a type or dopant, and the p_ type dopant is usually a Ιπ family. Yuan Ordinarily, for example, boron or aluminum. The η-type dopant is usually a ν group element such as phosphorus, arsenic, or antimony. In most embodiments, boron is used as the ρ_ type dopant, and phosphorus is used as η_ Type dopants. By including boron or phosphorus containing compounds in the reaction mixture, these dopants can be added to the above-described type and & 〇 type layers 106, 110, 112, 116. Suitable rotten and phosphorus compounds generally comprise Substituted and unsubstituted lower borane and phosphine oligomers. Some suitable boron compounds include trimethylborane (B(CH3)3 or ruthenium), diborane (Β2Η6), and boron trioxide (BF3). And triethylborane (B(C2H5)3 or TEB). Phosphine is the most common phosphorus compound. The dopant is usually supplied with a carrier gas such as hydrogen, helium, argon, or other suitable gas. If nitrogen is used as the carrier gas, the total hydrogen in the reaction mixture can be increased. Thus, the aforementioned hydrogen ratio will include the carrier gas that contributes to the hydrogen portion to transport the dopant. The dopant is generally provided as inert gas or Diluent in gas. For example, 201041167 is about 0.5% doping.

between. In the embodiment where the P-type germanium-containing layer U2 is a p-type microcrystalline layer, in other words, it is possible to provide a molar or volume concentration in the carrier gas. If a 0.5% dopant is provided in a carrier gas having a flow rate of 1.0 Sccm/L, the resulting dopant flow rate will be a ruthenium-type microcrystalline ruthenium layer 112 112 by providing a gas mixture of hydrogen and decane gas. a volume, wherein the volumetric flow rate ratio of hydrogen to decane is about: 丨 or greater, such as 1000:1 or less, such as between about 25 〇丨 and about 8 〇〇, and in a further example It is about 6 〇丨: 丨 or about 4 〇丨: 丨. The decane gas may be supplied at a flow rate between about sc1 sccm/L and about sc8 sccm/L, for example, between about sc 2 sccm/L and about 〇·38 sccm/L. Hydrogen gas can be provided at a flow rate between about 6 〇 sccm/L and about 500 sccm/L Torr, for example about 143 sccm/L. The TMP can be provided at a flow rate between about 0.0002 sccm/L and about 0.0016 sccm/L, for example about 0.0015 sccm/L. If a molar or a volume concentration of 0.5 is provided in the carrier gas. /. The TMB's dopant/carrier gas mixture can be provided at a flow rate between about 0.04 sccm/L and about 0.32 sccm/L, for example about 23 sccm/L » at about! The chamber between T rr and about 1 Torr (such as between about 3 Torr and about 20 Torr, between about 4 Torr and about 12 Torr, or about 7 Torr, or about 9 Torr) applying an RF power between about 50 mW/cm 2 and about 700 mW/cm 2 (such as between about 201041167 290 mW/cm 2 and about 440 mW/cm 2 ) will be about i〇A/min or A greater rate (such as about 143 A/min or greater) deposits a crystallization ratio of between about 2% and about 80%, such as between about 5% and about 7%. - Type microcrystalline layer. In the embodiment where the P-type germanium-containing germanium layer 1〇6 is a p-type amorphous germanium layer, the p_type amorphous litho layer 1〇6 can be deposited by providing a gas mixture of hydrogen gas to the gas-fired gas. Wherein the flow ratio of hydrogen to decane is about 2 〇: 1 or less. The 矽 烷 alkane gas can be supplied at a flow rate between about i sccm/L and about 1 〇 sccm/L. Hydrogen gas can be supplied at about. "The flow rate between the claws and 6 〇 sccm / L. Trimethylborane can be provided at a flow rate between about 〇〇.5 sccm / L and about 0_05 sccm / L. If in the carrier gas Providing a molar or trimethylborane having a volume concentration of 0.5 〇/〇, the dopant/carrier gas mixture can be provided at a flow rate between about i sccm/L and about 丨〇sccm/L. Applying an RF power between about m5 mW/cm2 〇 and about 200 mW/cm2 at a chamber pressure between about 0.1 Torr and 20 Torr, such as between about 1 Torr and about 4 Torr A p-type amorphous germanium layer is deposited at a rate of about 1 A/min or more. Addition of methane or other carbon-containing compounds such as CH4, C#8, C4H10, or (:#2) can be used Forming a carbon-containing P-type amorphous germanium layer 1〇6, which absorbs less light than other germanium-containing materials. In other words, the formed p-type amorphous germanium layer 1〇6 contains alloying elements (such as carbon). In the configuration of the ), the layer formed will have improved light transmission properties or window properties (for example to reduce the absorption of solar radiation). The increase in the amount of solar radiation transmitted through the p-type amorphous germanium layer 1〇6 Absorbed by the intrinsic layer, thereby improving the performance of the solar cell. In the example of the tricarbyl group 12 201041167, the rotten dopant concentration is used to provide boron dopant in the P-type amorphous germanium layer 1〇6. Maintained between about 1×1 〇18 atoms/cm 2 and about 1×10 20 atoms/cm 2 . In the embodiment where methane gas is added and used to form a carbon-containing p-type amorphous ruthenium layer, carbon-containing _ type The carbon concentration in the amorphous germanium layer is controlled between about 1 〇 atom ❶ / 〇 and about 2 〇 atom 0. In one embodiment, the thickness of the p_ type amorphous germanium layer 1 〇 6 The system is between about 20 A and about 300 A, for example between about 8 〇 a and about 2 〇〇 a. 〇 In an embodiment where the η-type stellate layer 110 is an n-type microcrystalline layer The Bu-type microcrystalline germanium layer 110 may be deposited by providing a gas mixture of hydrogen and decane gas, wherein the volumetric flow rate ratio of hydrogen to decane is about 1 〇〇:1 or greater', for example, about 50,000:1 or more. Small, such as between about 15 〇: 丨 and about 4 〇〇: j, such as about 304:1 or about 2〇3 j. The decane gas can be provided at between about 0.1 sccm/L and about 0.8 Sccm. Flow between /L , for example, between about 0.32 sccm/L and about 0.45 sccm/L, such as about 35 ❹ sccm/L. Hydrogen can be provided at a flow rate between about 3 〇 sccm/L and about sccm/L, For example between about 68 sccm/L and about 143 SCCm/L, such as about 71.43 sccm/L. The phosphine can be provided at a flow rate between about 0.0005 Sccm/L and about 0.006 Sccm/L, for example between Between about 0.0025 sccm/L and about 〇.〇15 sccm/L, such as about 0_005 SCCm/L. In other words 'If a moir or a phosphine having a volume concentration of 0.5% is provided in the carrier gas, the dopant/carrier gas mixture may be provided at a flow rate between about 0.1 sccm/L and about 5 SCCm/L, such as Between about 5 sccm/L and about 3 sccm/L, such as between about sc9 sccm/L and about 13 201041167 1.08 8 sccm/L. At a chamber pressure between about 1 T rr rr and about 1 〇〇 T 〇 rr (eg, between about 3 T rrrr and about 2 〇 T 〇 rr, more preferably between about 4 Torr) Between rr and about 12 Torr, such as about 6T rr or about 9 1 '〇〇〇, is applied between about 1 〇〇 11 ^ / (; 1112 and about 9 〇〇 111 arms / (^ 2 of RF power ( For example, about 37 〇mW/cm 2 ) will deposit a crystallization ratio of between about 2% and about 80% at a rate of about 5 A/min or greater (such as about 150 A/min or greater) (such as Between about 50% and about 70%) of the η-type microcrystalline germanium layer. In an embodiment in which the n-containing germanium layer 1 i 6 is an n-type amorphous germanium layer, the n-type amorphous germanium layer Layer 1 Ιό can be deposited by providing a gas mixture of hydrogen and decane gas 'where the volumetric flow ratio of hydrogen to decane is about 2 〇: 1 or less', for example about 5.5:1 or 7.8:1. decane gas can be provided a flow rate between about 0.1 sccm/L and about 1 〇 sccm/L, such as between about 1 Sccm/L and about 10 secm/L, between about 0.1 sccm/L and 5 sccm/ Between L, or between about 5 sCcni/L and about 3 sccm/L, such as about 1.42 sccm/L or 5.5 sccm/L. A flow rate between about 1 sccm/L and about 40 sccm/L can be provided, for example between about 4 sccm/L and about 40 sccm/L or between about 1 sccm/L and about 1 〇. Between sccm/L 'such as about 6.42 sccm/L or 27 sccm/L. The phosphine can be provided at a flow rate between about 0.0005 sccm/L and about 0.075 sccm/L, for example between about 〇.〇0〇 5 sccm/L and between about 0.0015 sccm/L or between about 0.015 sccm/L and about 0.03 sccm/L, such as about 0.0095 sccm/L or 0.023 sccm/L » if moir or is provided in the carrier gas If the volume concentration is 〇_5% of the phosphine, the dopant/carrier gas mixture may be provided at 14 201041167 at a flow rate between about 0.1 sccm/L and about 15 sccm/L, for example between about 0·1 sccm/ L is between about 3 sccm/L, between about 2 sccm/L and about 15 sccm/L, or between about 3 sccm/L and about 6 sccm/L, such as about 1.9 sccm/L or Approximately 4.71 sccm/L at a chamber pressure between about 1 Torr and about 20 Torr (eg, between about 0 5 T〇rr

Applying an RF power between about 25 mW/cm 2 and about 250 mW/cm 2 (about about 60 mW/cm 2 or about 80 mW/cm 2 ) between about 4 Torr or about 1 · 5 Torr will be about A rate of 1 A/min or greater (e.g., about 200 A/min or greater 'such as about 300 A/min or about 6 A/min) deposits an η-type amorphous; Alloys of bismuth and other elements such as oxygen, carbon, nitrogen, hydrogen and helium are useful in some embodiments. These other elements can be added to the ruthenium membrane by supplementing the reactant gas mixture with each source. Niobium alloys can be used in any type of tantalum layer, including interfacial layers, p-type, n-type, MB, wavelength selective renect〇r (WSR) layers, or intrinsic germanium layers. For example, carbon can be added to the stone membrane by adding a carbon source such as methane (CH4) to the gas mixture. Usually, most of them.丨-. 4 hydrocarbons can be used as a carbon source. Alternatively, organic cerium compounds (such as organic Wei, organic money 9, and the like) can be used as a source of carbon and carbon. False compounds (such as morphological and organic malodors) and = Park's compounds (such as Shi Xi Yan or wrong money) can be used as a source of oxygen (02). Other sources of oxygen include but three = nitrogen oxides (nitrous oxide (N2〇), nitrogen oxides (n〇), —nitrogen (N2〇3), nitrogen dioxide (N〇2), tetraoxide Nitrogen (Liao), 15 201041167 Nitrous oxide (N2〇5), and nitrogen trioxide (ΝΑ), hydrogen peroxide (H2〇2), carbon monoxide or carbon dioxide (CO or CO 2 ), ozone (〇3), An oxygen atom, an oxygen group, and an alcohol (R〇H, wherein R is any organic or heteroorganic group). The nitrogen source may include nitrogen (Nj, ammonia (NHJ, hydrazine (N2H2), amine (RxNR'3x, where X is 〇~3, and each of the various squalane and r, 疋 independent of any organic or heteroorganic group), Indoleamine ((Rco)xnr'3_x, where x is 〇~3, and each R and R are independently an organic or heteroorganic group), quinone imine (RCONCOR, where each R and R' Any organic or heteroorganic group that is independent), an enamine (HC = C3NR4R5, in which each Ri_Rs is an independent organic or heteroorganic group), and a nitrogen atom and a group. To improve conversion efficiency and reduce contact A resistor, an interface layer may be formed at the interface between the TCO layer 104 and the p-type germanium-containing layer 1〇6. The second layer 1 is not disposed between the TCO layer 104 and the p-type germanium-containing layer 1〇6. Interface 202. Interface layer 202 provides a good interface that improves adhesion between the TC and the TC substrate. In some embodiments, interface layer 202 can be heavily doped or degraded. (degenerateiy such as "the illusion of the enamel layer, which is at a high rate (for example, at the rate in the upper half of the aforementioned program) It should be formed by doping. We believe that degraded doping can improve charge collection by providing a low-resistance contact junction. We also believe that decay can improve the conductivity of some layers (such as amorphous layers). In the implementation of the financial, the interface layer 2〇2 is a recession-type amorphous amorphous layer (-heavily doped ρ·type amorphous dream (wide) layer). Decay (such as phantom exchange P-type amorphous stone The doping layer 202 #III group element doping concentration is higher than 16 201041167 type germanium containing layer 106. The doping concentration of the degraded (eg heavy) doped P++-type amorphous germanium layer 202 is equal to one at about 2 T〇rr and a layer formed between TMP and Shi Xiyuan at a pressure of about 2 5 τ ηη and a volumetric flow ratio of the mixture between about 2 and about (wherein the TMB precursor comprises 〇·5〇/0 moir or The volume concentration of ruthenium). The decay (e.g., heavy) doped broad amorphous slab layer 2 〇 2 is formed between about 45 w (10) s) and about 91 milliWatts / cm 2 (48 〇〇 WaUs) of plasma power. In a practical example, the dormant doped P'-type amorphous layer 2G2 can be formed by providing the following conditions to be about 2" sccm/L (such as 6). The flow rate between coffee m) and Sccm/L (such as 9 〇〇〇sccm), hydrogen gas at a flow rate of about 6 虱 for the mixture of 虱 矽 矽 、, and doped precursors to make TMB gas (such as 〇 The volumetric flow rate ratio of the top b) of the 5% moir or the volume concentration to the Shi Xixian gas mixture is 6 · i # flow rate, while the substrate support temperature is maintained at about 20 (rc, the plasma power is controlled At about 57 milhwatts/cm (3287 WaUs), the i-chamber pressure is maintained at about © Ton* for about 2_1 〇 seconds to form a film (such as a (10) film) in a consistent application, heavily doped The group III element metamorphism concentration of the germanium layer 202 is between about 1 〇 2 ° at 〇 ms / cm 3 and about between at 〇 ms / cm 3 . In an embodiment, the interface layer 202 may be a decay-doped p_ type of sound: a fossil layer ("4-doped p-type amorphous carbonized carbide (P++) layer). Carbon ', X can be supplied by supplying 3 carbon gas into the gas mixture when forming the heavily doped amorphous carbonized carbide layer 2G2. In one embodiment, the addition of a, or other, 3 carbon compound (eg, CH4, c3H8, or c-yang 17 201041167) may be used to form a heavily doped P-type amorphous tantalum carbide layer 202, which may be other germanium containing materials. The layer absorbs less light. We believe that the addition of carbon atoms to the interface layer 202 improves the light transmission of the interface layer 2〇2 as light passes through the layers. Thus less light will be absorbed or consumed. This improves the conversion efficiency of the solar cell. In one embodiment, the carbon concentration in the heavily doped p-type amorphous carbonized carbide layer 202 is controlled to be between about 1 atom 〇/〇 and about 50 atom%. Concentration. In one embodiment, the interface is strict

The thickness of the amorphous carbonized carbide layer 202 is between about 2 〇a and about 30 〇a, such as between about 1 〇A and about 200 A, such as between about 2 〇 and about 100 Å. . In the specific embodiment illustrated in FIG. 2, when the interface layer 2〇2 is a heavily doped p-type amorphous germanium layer or a heavily doped p_type amorphous tantalum carbide layer, the P-type germanium-containing germanium layer 106 may be a p_type amorphous germanium layer or a p-type amorphous tantalum carbide layer (an amorphous germanium alloy layer) to meet different process requirements. In one embodiment, the interface layer 202 is heavily doped p. The Å-type amorphous germanium layer, and the P-type germanium-containing germanium layer 106 is a p-type amorphous germanium layer or a p_type amorphous carbonized carbide layer. In another embodiment, the interfacial layer iron is a heavily doped amorphous carbonized carbide layer, and the p_ type containing the litmus layer 1〇6 is a type of amorphous carbonized carbide layer 0, and the wavelength is selectively reflective ( A layer selective lector (WSR) layer 206 may be disposed between the first p_i_n junction 2i2 and the second P_i_n junction 214. The WSR layer is provided with a film property in the formed solar cell H)0 which can improve light scattering and current generation. In addition, the 'ship layer 206 also provides a good p_n channel junction. The (4) channel mask of the 18 201041167 ” has a high electrical conductivity and a controlled energy gap, which can be continued for nn, a, Ruo & j such as the penetration and reflection properties of the 曰a pn channel junction to improve the light conversion efficiency of the formed solar cell. The He 2 〇 6 system actively acts as an m-projecting member with a desired refractive index or refractive index range. The light WSR layer 206 received from the light incident side of the solar cell 100 also serves as a bonding layer that promotes short to medium wavelength light (e.g., 28 () nm to (4) in the first p small η junction 212. Absorbs Ο Ο and improves short-circuit current, thus improving quantum and conversion efficiency. The emblem 2〇6 has a high film transmittance for medium to long-wavelength light (for example, 5〇〇(10) to u〇〇_ to promote light The transmission to the layers formed at the second junction 214. Further, when the light of a desired wavelength (e.g., a shorter wavelength) is reflected to the layer in the first ρ+η junction 212 and the desired wavelength is transmitted When light (for example, a longer wavelength) is applied to a layer in the second p_i_n junction 214, it is generally desirable The SR layer 206 can absorb as little light as possible. Furthermore, the wsr layer 206 can have a desired energy gap and high film conductivity, thereby efficiently conducting the generated current and allowing electrons to flow from the first pin junction 212 to The second p_i_n junction 214 and avoids blocking the generated current. In an embodiment, the WSR layer 206 can be a microcrystalline layer having an n-type or p-type dopant site in the WSR layer 2〇6. In an exemplary embodiment, the WSR layer 206 is an n-type crystalline germanium alloy having n-type dopant sites within the WSR layer 206. Different dopants in the WSR layer 206 will also ring. Optical and electrical properties of the WSR film, such as energy gap, crystallization ratio, conductivity, transmittance, film refractive index, extinction coefficient, and the like. In some examples, one or more dopants may be doped into the WSR layer. 206 19 201041167 in various regions 'to effectively control and adjust the film energy gap, work function conductivity, transmittance, etc. In an embodiment, the WSR layer 206 is controlled to have between about 1 > 4 and about a refractive index between 4, an energy gap of at least about Μ, and a conductivity greater than about 丨〇-6 s/cm

In an embodiment, the WSR layer may comprise an n-type bonded alloy layer, such as oxidized stone (Si〇x, Si〇2), carbonized stone (sic), and nitrided oxygen (Si〇N). Niobium nitride (SiN), tantalum nitride (sicN), niobium carbide (si〇c), niobium oxynitride (SioCN), or the like. In an exemplary embodiment, WSR layer 206 is an n-type SiON or SiC layer. The P-i buffer type intrinsic amorphous germanium (PIB) layer 2〇8 may be selectively formed between the second type p-i_n junction 214 and the intrinsic type containing layer. We believe that the piB layer 2〇8 can efficiently provide transitional film properties between the layers, thereby improving overall turnaround: performance. In an embodiment, 'PIB | 2〇8 can be deposited by providing a gas mixture of hydrogen to decane gas, wherein the hydrogen to decane ratio is about or less, such as, for example, less than about 30:1, such as 2〇:1 Between about 30:1, such as about 25:1. Shi Xi Xuanqi can be supplied with a flow rate between about 0.5 s Ccm/L and about 5 sccm/L, for example about 23 sccm/L. Hydrogen gas may be provided at a flow rate between about 5 sccm/L and about ribs sccm/L, such as between about 2 〇 "(10) and about μ secm/L, such as about 57 sccm/L. RF power between about b mW/cm2 and about 250 mW/cm2 to the showerhead, for example about 30 mW/em2. The chamber pressure can be maintained between about 〇1 and about 20 T〇rr, For example, between about 〇5 T〇rr and about $T〇rr, 20 201041167 or about 3 Ton·. The deposition rate of the PIB layer 206 may be about l〇〇A/min or more. The hetero-n-type amorphous germanium layer 210 may be primarily formed as a heavily doped n-type amorphous clump layer to provide improved ohmic contact with the second tc germanium layer 118. In one embodiment, heavily doped The n-type amorphous germanium layer 210 has a dopant concentration of between about 〇2〇atoms/cm3 and about 1〇2iat〇ms/cm3. Θ Figure 3 is shown in the TCO layer 1〇4 An enlarged schematic view of another embodiment of the interfacial layer between the plutonium-containing layers 1 and 6. In addition to the interfacial layer 202 of the second embodiment, a second interfacial layer 3〇4 may be disposed at the first interfacial layer 202. Between the p-type germanium containing layer 106 The second interfacial layer 3〇4 may have a different film property than the first interfacial layer 202, thereby compensating for some of the electrical properties not provided by the first interfacial layer 202. For example, a film having a higher conductivity generally has a relative Low film transmittance which adversely absorbs or reduces the amount of light passing between the junctions of the solar cells and vice versa. By using this two-layer configuration, a larger amount of light having different wavelengths can be tolerated To the first junction 212 and further to the second junction 214 while maintaining the desired membrane conductivity, a greater amount of current is produced. In one embodiment, the second interface layer 304 is a p-type amorphous stone. a layer having a ternary element dopant concentration similar to the p-type ruthenium-containing layer 106 but having a different film type (for example, a dopant) than the ρ-type ruthenium-containing layer 1 。 6. For example, when Ρ- When the ruthenium-containing layer 106 is a Bu-type amorphous ruthenium layer, the second interface layer 304 may be a ρ-type amorphous carbonized carbide layer. The first interface layer 21 201041167 202 may be a heavily doped ρ_type amorphous ruthenium layer. Or heavily doped ρ·type amorphous tantalum carbide layer. The second interface layer 304 can There is a type dopant concentration which is smaller than the first-interface layer, such as a heavily doped p-type layer, but is similar to the type-containing layer 1〇6. In the embodiment of the third figure, the first interface layer 2 〇2 is a heavily doped amorphous carbon cut layer having a thickness between about G) 约 and about 2G () A, and the second interfacial layer 304 is a P-type having a thickness between about 50 A and about 200 people. An amorphous carbonized germanium layer. The germanium-containing germanium layer 1〇6 is a p_type amorphous germanium layer. FIG. 4 is another embodiment of the interface structure, wherein the interface structure has a plurality of layers formed in the TC〇 Between layer 1 〇 4 and 卜 type 矽 layer 1 〇 6. In addition to the interface layer 2〇2 depicted in Figures 2-3, an additional tc〇

The ruthenium layer 302 can be interposed between the bottom TCO layer 104 and the interface layer 2〇2. In one embodiment, when the bottom TC layer 1 〇 4 is a tin oxide layer (Sn 〇 2), the additional TC0 layer 302 may be a Zn 〇 layer. We believe that the additional TC0|3G2 provides better chemical resistance to the plasma that is subsequently performed to form a subsequent layer thereon. The good chemical resistance of the additional ZnO TCO layer 302 provides good surface texture control during the plasma or etch process, thereby enhancing light trapping capability. In addition, the additional TC layer 3〇2 can also provide high film transmittance, low film resistivity, and high film conductivity, which can be maintained after it is formed thereon.

The surface conversion performance of the junction battery. Thus, when the additional TCO layer 302 is formed on the bottom TCO layer 104, these film properties can be controlled in such a way as to improve conversion efficiency, reduce contact resistivity, and provide high chemical resistance to the plasma of the horse. And good expectations for capturing mosquitoes on the surface of light. 22 201041167 In an embodiment, the additional TC layer 3〇2 may be a oxidized (ZnO) layer' having a concentration of a dopant between about 5 (four) and about 5 w (9). The additional TCO layer 3〇2 can have between about 5% and about 5 wt/. The degree of impurity between the two is affected. The thickness of the additional layer can be controlled between about 5 〇A and about 5 〇〇A. The Zn layer can be formed by CVD, pVD, or any other suitable deposition technique. ◎ After the additional TC layer 3〇2 is formed on the bottom tc layer, the interface layer 302 and the p_type containing layer 1〇6 can then be formed thereon to form the desired junction. In an exemplary embodiment, the interfacial layer 2〇2 is a heavily doped amorphous germanium layer, and the germanium-containing layer (10) is a pit-type carbonized clump layer. Fig. 5 is a view showing another embodiment of the interface structure formed between the TC layer 1〇4 and the p-type germanium layer 1〇6. An additional TC layer 3〇2 (similar to the additional TC layer 3〇2 in Figure 4) is deposited on the bottom layer of 〇4〇. Next, a type of tarpaulin layer 1〇6 is deposited on the additional Tc layer. In this particular embodiment, the p-type germanium-containing layer 1〇6 may be a p-type microcrystal/nanocrystalline germanium or a tantalum carbide layer. It should be understood that the nanocrystalline layer has a particle size of about or less than 300 A, and the microcrystalline layer has a particle size of about or more than 3 Å. We believe that the P_ type microcrystalline germanium layer or nanocrystalline germanium layer can provide lower contact resistance than the P-type amorphous germanium layer. In the exemplary embodiment illustrated in FIG. 5, the 〇 layer (〇 layer 1 〇 4 is a tc 〇 layer containing tin oxide (811 〇 2). The additional TCO layer 302 is oxidized (Zn0) 2 TC 〇 The layer, and the P-type germanium-containing layer 106 is a p_type nanocrystalline carbonized layer. 23 201041167 Fig. 6 shows the interface formed between the TC layer 1〇4 and the layered layer 〇6 Still another embodiment of the structure. An additional TC layer 3〇2 (similar to the additional TCO layer 302 of Figure 4-5) is deposited on the bottom TC layer 1〇4. Next, an intermediate interface layer 602 is deposited. On this additional TC layer 203, I believe that the intermediate interface layer 6〇2 can contribute to the creation of a high electric field between the additional TCO layer 302 and the p-type amorphous germanium layer i 〇6 to be deposited. Thereby, the conversion performance of the solar cell is efficiently improved. In a D embodiment, the intermediate interface layer 602 is a P-type crystallite/nanocrystal having a thickness of between about 1 〇 and about 2 〇〇. Layer or p_ type microcrystalline/nanocrystalline carbonized germanium layer. Then, p-type germanium containing layer 106 is deposited on intermediate interface layer 6〇2. In the embodiment illustrated in Fig. 6, TC layer 1〇 4 is a tco layer containing tin oxide (Sn〇2) The additional TCO layer 302 is a tc〇 layer containing zinc oxide (Zn〇). The intermediate interface layer 602 is a p-type microcrystalline/nanocrystalline tantalum carbide layer, and the p-type germanium containing layer 106 is p_type non- A crystalline carbonized layer. Fig. 7 illustrates another embodiment of an interfacial structure formed between the TCO layer 1〇4 and the p-type containing layer 1〇6. In this embodiment, the triple film structure Formed between the TCO layer 104 and the p_type germanium containing layer 1〇 6. The triple film structure includes an additional TCO layer 302, a first intermediate layer 7〇2, and a second intermediate layer 704. The additional TCO Layer 3〇2 is similar to the additional TCO layer 302 of Figure 46. We believe that a tantalum layer (e.g., without carbon dopants) can have a relatively high conductivity, while a tantalum alloy layer (e.g., carbon or Other alloy dopants will have two films of light transmittance and allow a large amount of light to pass through to the junction cell. Therefore, by using the triterpene structure, the film conductivity and the local film transmittance can be obtained for high Conversion performance, and low contact 24 201041167 resistivity. In the embodiment illustrated in Figure 7, the first intermediate layer 702 can be a P- between about 10 and about 200 A. Type of microcrystalline/nanocrystalline layer 704. The second intermediate layer 704 may be a p-type microcrystalline/nanocrystalline carbonized carbide layer having a thickness of between about 40 A and about 200 A. After forming the three-film structure A 'P-type germanium containing layer 106 may be formed on the three film structure. In an embodiment, the p-type germanium containing layer 1 formed on the three film structure may be a P-type amorphous carbonized dream layer. FIG. 8 illustrates another embodiment of an interface structure formed between the TCO layer 104 and the P-type germanium containing layer 802. In this embodiment, the TCO layer 104 is selected to be made from a zinc oxide (ZnO) containing layer. The p-type germanium-containing layer 802 formed thereon is a p-type microcrystalline/nanocrystalline tantalum carbide layer having a thickness of between about i〇A and about 200A. We believe that the use of ZnO-based TCO layer 104 provides good chemical resistance when plasma is processed to deposit subsequent layers. Alternatively, the TCO layer 104 may also be an oxidized inscription layer of η-type doping. The η-type dopants may include butterflies, aluminum, gallium, and ytterbium analogs. In this particular embodiment, the ZnO-containing TCO layer 104 may have a thickness between about 100 A and about ιοοοο. Figure 9 illustrates another embodiment of an interface structure formed between the TCO layer 104 and the P-type germanium containing layer 106. In this particular embodiment, the TC layer 104 can be selected to be made of a zinc oxide (ZnO) containing layer, similar to the TCO layer 104 of FIG. Next, an interface layer 602 (such as intermediate interface layer 602 depicted in FIG. 6) is deposited on TCO layer 104. We believe that the interface layer 602 can help establish a high electric field between the additional TCO layer 104 and the P-type amorphous germanium layer 106 to be deposited, thereby efficiently converting the conversion performance of the 201041167 solar cell. In the embodiment, the interfacial layer is a p_ type microcrystalline/nanocrystalline carbonized stone layer having a thickness " between about 10 A and about 2 Å. Then, a P-type inclusion layer 1〇6 is deposited on the interface layer 6〇2. In an exemplary embodiment depicted in FIG. 9, TCO I 104 S contains a TC layer of zinc oxide (Zn〇) and the interface layer 6〇2 is a p-type microcrystalline/nanocrystalline carbonized stone layer. And the p-type germanium-containing layer 106 is a p-type amorphous tantalum carbide layer. Fig. 10 is still another embodiment of the interface structure formed between the TCO layer 104 and the p-type germanium containing layer 100. In the embodiment illustrated in Fig. 10, the double film structure is formed between the D (: 0 layer 104 and the p type germanium containing layer 。 6). In this particular embodiment, the TCO layer 1 〇 4 can be selected. Formed from a zinc oxide (ZnO) layer to form a TCO layer HM similar to that of Figure 7-9. The dual film structure includes a first intermediate layer 7〇2 and a second intermediate layer 704' similar to the seventh layer. The first intermediate layer 7〇2 and the second intermediate layer 7 are called. The intermediate layer 702 may be a P-type microcrystalline/nanocrystalline layer having a thickness of between about 1 〇A and about 2〇〇A. The second intermediate layer 7〇4 may be a P-type microcrystalline/nanocrystalline tantalum carbide layer having a thickness between about 4 A and about 20 A. The double film structure is formed in the TCO layer 1〇4. After the upper layer, the fine tantalum-containing layer 1〇6 may be formed on the double film structure. In one embodiment, the P-type germanium-containing layer 1〇6 formed on the double film structure may be p_type amorphous A layer of tantalum carbide. Figure 11 is a cross-sectional view of one embodiment of a plasma enhanced chemical vapor deposition (PEC VD) chamber, in which one or more thin film solar cells (e.g., solar cells of the Figure) a film can be added in the plasma A chemical vapor deposition (PECVD) chamber 11〇〇 is deposited. A suitable electron-enhanced chemical vapor deposition chamber is obtained from Applied Materials% Inc., Santa Clara, California, USA. It should be understood that other process chambers (including process chambers from other manufacturers) may also be used to practice the invention. Generally, chamber 1100 includes a plurality of walls 11, 2, a bottom U, a nozzle 1106, and A substrate support member 113, which defines a process volume 1106. The process volume 11〇6 can be transported into and out of the chamber 1100 via a valve 11〇8 <mountain. The substrate support n3〇〇 A substrate receiving surface 1132 and a rod-34' substrate receiving surface 1132 are included for supporting the substrate, and the rod 1134 is attached to the lifting system η% to raise and lower the substrate support 113 〇β. A ring 1133 can be selectively placed over the periphery of the substrate 102. A plurality of lift pins U38 are movably disposed through the substrate support 113A to move the substrate to and from the substrate receiving surface 1132. Pieces 113〇 may also include heating and/or cooling Member 1139 to maintain substrate support 113 at a desired temperature. Substrate support 1130 may also include a plurality of ground straps 1131 to provide RF ground at the periphery of crucible substrate support 1130. The periphery is coupled to a backing plate 1112 by a suspension 1114. The nozzle mo can also be coupled to the backing plate by one or more central supports 26 to help avoid sagging and/or control the nozzle The straightness/curvature of the ιη〇. A gas source 1120 is coupled to the backing plate 1U2 to provide gas through the backing plate m2 and through the showerhead 1110 to the substrate receiving surface 1132, the vacuum system 09 is connected to the chamber 11〇〇, The process volume 1106 is controlled to the desired pressure. _ RF power source 丨丨 22 is coupled to backplane 1112 and/or showerhead 111 〇 to provide RF power to showerhead 111 〇 such that an electric field of 27 201041167 is established between the showerhead and substrate support 113〇 Thus, a plasma can be produced from the gas between the showerhead 1110 and the substrate support ιΐ3〇. Various RF frequencies can be used, such as frequencies between about 3 ΜΗζ and about 200 MHz. In an embodiment, the RF power source is provided at a frequency of 13.56 MHz.

远端 A remote plasma source (such as an inductively coupled remote plasma source) can also be coupled between the gas source and the backing plate. Between processing a plurality of substrates, a cleaning gas can be supplied to the remote plasma source 1124, thereby producing and providing - a distal plasma to clean the chamber components. The cleaning gas can be further stimulated by the RF power source 1122 provided with the head. Suitable cleaning gases include, but are not limited to, NF3, F2 and SF6. The deposition method using one or more layers (e.g., one or more layers of Figure 10) may include a deposition parameter surface area of 10,000 cm2 or greater in the u-th or other suitable chamber, A substrate of 40,000 cm2 or more, or '〇〇0 Cm, is supplied to the chamber. It will be appreciated that the substrate can be (4) after processing the substrate to form a smaller solar cell. In one embodiment, the heating and/or cooling member 丨丨39 can be set to provide about 4 Torr (rc or less substrate support temperature during the product, for example; about 1 〇〇C and about 400°) Between C, or between about 150 ° C and about 300 C, such as about 200 e C. The spacing between the top of the substrate disposed on the substrate receiving surface 1132 and the showerhead 1110 may be between Between about 400 mil and about 1 '200 mil, the figure is for example between 400 mil and about 800 mil. A top view of one embodiment of the system 1200, wherein 28 201041167 Ο Ο The process system 1200 has a plurality of Process chambers 1231-1237 (eg, a PECVD chamber of Figure 11 or other suitable chamber where a diaphragm can be deposited). Process system 1200 includes a transfer chamber 1220 and a plurality of process chambers 1231-1237, transfer chamber KM It is coupled to a load lock chamber 1210. The load lock chamber 121 allows the substrate to be transferred between the external environment outside the system and the vacuum environment within the transfer chamber 1220 and the process chambers 1231-1237. The load lock chamber 1210 includes one or more evacuatable regions, which can be evacuated The field holds one or more substrates. The evacuatable regions are pumped down during the input of the substrate into the system 12, and are during the output of the substrate from the system 12 The transfer chamber 122 has at least one vacuum robot arm 1222 disposed therein, and the vacuum robot arm 1222 is adapted to transfer the substrate between the load lock chamber 121 and the process chamber 1231 1237. Figure 12 shows seven chambers, and we are not intended to limit the scope of the invention to this configuration, as the system can have any suitable number of processing chambers. In a particular embodiment of the invention, The system 12 is configured to deposit a first Ρ + η junction of the multi-sided solar cell (e.g., component symbols 122, 212). In one embodiment, one of the process chambers of the process chambers 1231-1237 is configured to sink The first ρ- η junction The intrinsic layered layer can be in the same cavity The deposition is in progress, and ^ 叩 恶 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 。 。 。 。 。 。 。 。 。 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 。 。 。 。 。 。 。 。 。 。 。 After depositing the p-type layer (4) after the true-line arm is transferred to the Ρ-type layer, the substrate is subjected to a vacuum process. Then, in the chamber forming the H-handle, the process cavity type layer 2:: smectic layer and η ,Floor. In the embodiment of the present invention, the substrate is formed by the vacuum robot arm, and in the special hair embodiment, the process chamber is used to form the workpiece η 曰 曰 “ 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在The time is about 4 times or more (for example, 6 times or more). Therefore, in a particular embodiment of the system for depositing the junction, the ratio of ρ; chamber ... chamber is 1:4 or greater. For example, 1:6 or greater. The throughput of the wire (including the time to provide plasma to clean the process chamber) can be about 10 substrates/hour or more, such as 2G substrate/hour or greater. In a particular embodiment, system 1200 is configured to deposit a second p_i_n junction (e.g., component symbols 124, 214) of a multi-faceted solar target cell. In an embodiment, one of the process chambers 1231-1237 is a system (four) The p_type layer is configured to deposit a second Pi-n junction and the remaining chambers 1231-1237 are each configured to deposit an intrinsic layer and an n-type layer. The intrinsic layer of the second p_i_n junction and n The _-type layer can be in the same chamber / several products without the need to include any passivation gas path between the deposition steps. In the embodiment, the time for processing the substrate to form the P-type layer by using the process chamber is about 4 times or more times the time for forming the intrinsic layer and the p-type layer in a single chamber. Therefore, in the deposition second In a particular embodiment of the system of pin junctions, the ratio of 'P-chamber pair" η-chamber is 1:4 or greater, such as 1:6 or greater. Capacity of the system (including providing plasma for cleaning 30) The time of the process chamber may be about 3 coils per hour or more 'eg s substrate per hour or more. In a particular embodiment, the configuration is to deposit the first layer comprising the intrinsic amorphous layer of stone... The capacity of the junction system and system 1200 is 35 times to deposit the capacity of the system 1200 containing the first -D · 4 ^ ^ -P 1-n junction of the intrinsic microcrystalline layer. Due to the thick sound difference between the microcrystalline lithosphere layer and the intrinsic amorphous alexandrite layer, it is suitable for depositing the first -ρ]_η junction (which contains ^

The mono-system 12 (10) of the amorphous layer can be matched to two or more systems suitable for depositing a second P-i-n junction comprising an intrinsic microcrystalline layer. Therefore, the WSR layer deposition process can be performed in a system suitable for depositing the first junction for efficient throughput control. Once the first junction has been formed in a system, the substrate can be exposed to the external environment (ie, vacuum) and transferred to the second system, where the second interface is formed in the second system . Dry or wet cleaning of the substrate between the first system depositing the first p_i_n junction and the second system depositing the second p-i-n junction may be necessary. In one embodiment, the WSR layer deposition process can be used to perform in a separate system. Figure 13 is a continuation of the configuration of a portion of a production line 1300 having a plurality of deposition systems 1304, 13〇5, 13〇6 or clustering tools communicably coupled by an automated device 1302 ( Cluster tool). In one configuration, as shown in FIG. 13, the production line 1300 includes a plurality of deposition systems 1304, 1305, 1306 that can be used to form one or more layers on the substrate 102, form pin junctions, or form a complete Solar cell components. The system 1304, 1305, 1306 can be similar to the system 1200' illustrated in Fig. 12 of 31 201041167 but is generally configured to deposit different layers or junctions on the substrate 1〇2. Typically, each deposition system 1304, 1305, 610 has a load lock chamber 1304F, 1305F, 1306F that is similar to the load lock chamber 1210 and that is individually communicably coupled to the automation device 1302. The automation device 1302 is configured to move a substrate between the deposition systems 1304, 1305, and 1306. During the sequential execution of the process, the substrate is generally transferred by system automation device 13〇2 to one of systems 1304, 1305, and 1306. In an embodiment, the system 1306 has a plurality of configurations to deposit or process one or more layers of chambers 13〇6Α-13〇6Η when forming the interface layer, the first Pin junction, and the system 13〇5 has a plurality of The chambers 1305A-1305H are configured to deposit one or more WSR layers, and the system 1304 has a plurality of configurations to deposit or process one or more layers of chambers 1304A-1304H when forming the second p_i_n junction. It will be appreciated that the number of systems configured to deposit the various layers and the number of chambers can be varied to meet different process requirements and configurations. The automated device 13 02 can generally include a robotic arm device or conveyor adapted to move and position a substrate. In one example, the automation device 1302 is a series of conventional substrate conveyors (eg, roller conveyors) and/or robotic arm devices (eg, 6-axis robotic arms, SCARA robotic arms) that are adapted to move as needed The substrate within the production line 1300 is positioned. In one embodiment, one or more of the automated devices 1302 also includes one or more substrate lifting members, or a drawbHdge conveyor, which is used to allow substrates located upstream of the desired system to be in a living 32 201041167 The line 1300 is conveyed across the substrate that blocks its movement to another desired location. In this way, movement of the substrate to various systems will not be hindered by other substrates to be delivered to other systems. In one embodiment of the production line 1300, a patterning chamber 135 is in communication with one or more conveyors 1302 and is configured to form one or more layers of the formed WSR layer or any layer used to form the junction cell. Perform a patterning process. It will be appreciated that the patterning process can also be used to etch one or more regions of one or more previously formed layers during the solar cell element formation process. Although the configuration of the patterning chamber 135A is generally discussed as an etching type of patterning process, such a configuration does not limit the scope of the invention described herein. In one embodiment, the patterning chamber 1350 is used to remove one or more regions of one or more of the formed layers and/or to accumulate one or more layers of material (eg, a dopant-containing material, The metal paste is on one or more of the layers formed on the surface of the substrate. While the following description is directed to embodiments of the present invention, other and further embodiments of the present invention can be devised without departing from the scope of the invention, and the scope of the invention is determined by the scope of the accompanying claims. two. For example, the process chamber of Figure 11 has been shown to be in a horizontal position. It will be appreciated that in other embodiments of the invention, the process chamber can be positioned in any non-horizontal position, such as a vertical position. Embodiments of the present invention have been described with reference to the multi-process chamber clustering tools of Figures 12 and 13 but coaxial systems and hybrid flush/cluster systems can also be used. By reference to the first system (which is configured to form the first-pin junction), the second system (which is configured to form the WSR layer), and the third system 33 201041167 (which is configured to form the second p_i_n junction) Embodiments of the invention are described, but a first p-sm junction, a WSR layer, and a first p + n junction may also be formed in a single system. Embodiments of the present invention have been described with reference to process chambers suitable for depositing wsr layers, intrinsic layers, and n-type layers, but individual chambers may also be suitable for depositing intrinsic and n-type layers and WSR layers And a single process chamber may be adapted to deposit a p-type layer, a WSR layer, and an intrinsic layer. Finally, the embodiments described herein are P_i_n configurations that are substantially applicable to transparent substrates such as glass, but other embodiments can be envisaged where n_i_p junctions (whether single or multiple stacks) can The reverse deposition sequence is constructed on a non-transparent substrate (eg, no steel or polymer). Therefore, the present invention provides an apparatus and method for forming an interface structure between a TCO layer and a solar cell junction. The interface structure advantageously provides low contact resistance, high film conductivity, and high film transmittance compared to conventional methods, which can efficiently improve the 光电 photoelectric conversion performance and device performance of PV solar cells. While the foregoing is a description of the embodiments of the present invention, the invention may be construed as the scope of the invention, and the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The description of the present invention can be understood in detail by reference to the embodiments of the present invention, which are briefly described in the foregoing, wherein the embodiments are illustrated in the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a tandem junction thin film solar cell according to an embodiment of the present invention. Figure 2 is a cross-sectional view showing a battery of a tandem junction film solar cell having an interface layer disposed between a TCO layer and a battery junction, in accordance with an embodiment of the present invention. 3-10 are cross-sectional views showing a tandem junction thin film solar cell according to an embodiment of the present invention, wherein the tandem junction thin film solar cell has an interface layer disposed on the TC0 layer and the battery junction between. BRIEF DESCRIPTION OF THE DRAWINGS The Figure is a cross-sectional view of an apparatus in accordance with one embodiment of the present invention. Figure 12 is a plan view of an apparatus in accordance with another embodiment of the present invention. Figure 13 is a plan view of a portion of a production line according to an embodiment of the present invention, wherein the production line has the apparatus of Figures 11 and 12 incorporated therein. 〇 To promote understanding, the same component symbols are used where possible to denote the same components that are common to the schemas. It will be appreciated that the elements and features of an embodiment may be advantageously incorporated in other embodiments without particular detail. It is to be understood, however, that the appended claims [Main component symbol description] 35 201041167 100 multi-junction solar cell 101 light or solar radiation 102 substrate 104 first TCO layer 106 p-type chopped layer 108 essential type germanium-containing layer 110 η - type containing > 11 2 ρ - type containing layer 11 4 essential type cerium layer 116 η - type containing dream layer 118 second TCO layer 120 metal back layer 122 first pin junction 12 4 second p - i - η junction interface 202 Layer 206 wavelength selective reflection (WSR) layer 208 pi buffer type intrinsic amorphous germanium layer 210 recessed doped n-type amorphous germanium layer 2 1 2 first pin junction 2 1 4 second pin junction 302 TCO layer 304 second interface layer 602 intermediate interface layer 702 first intermediate layer 36 201041167 704 second intermediate layer 802 p-type germanium containing layer 1100 chamber 1102 wall 1104 bottom 1106 process volume II 0 8 valve 1109 vacuum pump

III 0 nozzle 1112 back plate 1114 suspension 111 6 center support 1120 gas source 1122 RF power source 1124 remote plasma source 1130 substrate support 'piece 11 3 1 grounding belt 1132 substrate receiving surface 11 3 3 shadow ring 1134 Rod 1136 Lifting System 11 3 8 Lifting Pin 1139 Cooling Member 1200 Process System 201041167 1210 Load Locking Chamber 1220 Transfer Chamber 1222 Vacuum Robot Arm 1231-1237 Process Chamber 13 00 Production Line 13 02 Automation 13 04, 1305, 13 06 Deposition System 1304A-1304H Chamber 〇1305A-1305H Chamber 1306A-1306H Chamber 1350 Patterning Chamber 38

Claims (1)

201041167 VII. Shenqing patent scope: 1. A photovoltaic element comprising: and - a - TCO layer disposed on a substrate; - a second (10) layer 'which is disposed on the first -TCO layer P垔3矽a layer formed on the second TCO layer. 2. The photovoltaic element according to claim 帛i, wherein the ruthenium-containing layer comprises carbon. The p- 3. The photovoltaic according to the scope of claim 2 The component further comprises: a P-type tantalum carbide layer disposed between the second TC layer and the p-type germanium layer. 4. The photovoltaic element according to claim 3, wherein the p_ 〇 type lanthanum carbide layer is at least one of: a microcrystalline niobium carbide layer, a nanocrystalline niobium carbide layer or an amorphous niobium carbide layer. Floor. 5. The photovoltaic device of claim 3, further comprising: a p-type nafite layer disposed between the second TCO layer and the P-type carbonized stone layer. 6. The photovoltaic element according to the invention of claim 2 further comprising: 39 201041167 a recessed doped P-type amorphous germanium layer disposed between the second TCO layer and the p-type germanium containing layer . 7. The photovoltaic device of claim 1, wherein the first TCO layer is a tin oxide containing layer and the second TCO layer is an oxidized layer. I. The photovoltaic element according to claim 1, further comprising: Ο an intrinsic ruthenium-containing layer disposed on the P-type ruthenium-containing layer; and an η-type ruthenium-containing layer, the setting On the essential type of ruthenium containing layer. 9. The photovoltaic device according to claim 8, further comprising: a second p-type germanium-containing layer disposed on the n-type germanium-containing layer; a second intrinsic layer containing germanium; And disposed on the second p-type germanium-containing layer; and a second n-type germanium-containing layer disposed on the second intrinsic germanium-containing layer. 10. The photovoltaic component of claim 1, wherein the second TC0 layer has a thickness between about 50 Å and about 500 Å. 11. A photovoltaic element comprising: - a TC0 layer disposed on a substrate; 201041167 'interfacial layer disposed on the TCO layer, wherein the interfacial layer is a carbonaceous P-type germanium containing layer; A P-type ruthenium-containing layer is disposed on the interface layer. The photovoltaic element according to claim 11, wherein the interface layer is a recessed doped p-type amorphous tantalum carbide layer. The photovoltaic element according to item n of the Shenqing patent scope, wherein the interface layer is a P-type microcrystalline niobium carbide layer. 14. The photovoltaic device of claim 5, further comprising: a P-type nanocrystalline layer disposed between the interface layer and the TCO layer. 15. The photovoltaic element of claim 4, wherein the Tc 〇 层 layer is a zinc oxide-containing layer. The zinc oxide-containing layer has an η-type dopant element selected from the group consisting of aluminum, boron or gallium. 16. A method of seeding & photovoltaic elements, comprising the steps of: forming a first Tc layer on a substrate; forming a second TC0 layer on the first TCO layer; and forming a _ say _ Le Yi P - forming a junction of the first TC0 layer, wherein the first pin 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 a crystalline germanium layer, a nanocrystalline germanium system wherein the ρ-type germanium-containing germanium layer is - or an amorphous germanium layer; forming an intrinsic type; and a layer of germanium is formed on the germanium-type germanium layer A type of ruthenium-containing layer is disposed above the intrinsic stellate layer. 17. The method of claim 16 further comprising: forming a -p-type carbonized stone layer on the second TC layer and the Between the first pin junctions, wherein the fossil layer P-type tantalum carbide layer is at least a microcrystalline niobium carbide layer, a ruthenium, a ruthenium ruthenium layer or an amorphous carbon. The method further comprises a difficult I-P-type umbrella B < TCO layer and the ρ·丁,水日日矽 layer in the first type Between the layer of silicon. Ο 19. If the patent application is in the method described in item 16 of the second TCO, it further includes: the formation-recession. , amorphous". Xing the first - P + n junction between. 2 〇 · as claimed in the scope of the "term layer is - containing tin oxide layer, and the method, where the - (10) zinc layer. a Tc layer is an oxidation 42