JP2019512870A5 - - Google Patents
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- Publication number
- JP2019512870A5 JP2019512870A5 JP2018544865A JP2018544865A JP2019512870A5 JP 2019512870 A5 JP2019512870 A5 JP 2019512870A5 JP 2018544865 A JP2018544865 A JP 2018544865A JP 2018544865 A JP2018544865 A JP 2018544865A JP 2019512870 A5 JP2019512870 A5 JP 2019512870A5
- Authority
- JP
- Japan
- Prior art keywords
- support
- layer
- carbon
- semiconductor structure
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 229910001339 C alloy Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910000676 Si alloy Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1651642 | 2016-02-26 | ||
| FR1651642A FR3048306B1 (fr) | 2016-02-26 | 2016-02-26 | Support pour une structure semi-conductrice |
| PCT/FR2017/050400 WO2017144821A1 (fr) | 2016-02-26 | 2017-02-23 | Support pour une structure semi-conductrice |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019512870A JP2019512870A (ja) | 2019-05-16 |
| JP2019512870A5 true JP2019512870A5 (enExample) | 2020-04-09 |
| JP6981629B2 JP6981629B2 (ja) | 2021-12-15 |
Family
ID=55650590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018544865A Active JP6981629B2 (ja) | 2016-02-26 | 2017-02-23 | 半導体構造用の支持体 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US11251265B2 (enExample) |
| EP (1) | EP3420583B1 (enExample) |
| JP (1) | JP6981629B2 (enExample) |
| KR (1) | KR102687932B1 (enExample) |
| CN (1) | CN109155276B (enExample) |
| FR (1) | FR3048306B1 (enExample) |
| SG (2) | SG11201807197PA (enExample) |
| TW (1) | TWI787172B (enExample) |
| WO (1) | WO2017144821A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102109292B1 (ko) * | 2016-04-05 | 2020-05-11 | 가부시키가이샤 사이콕스 | 다결정 ＳｉＣ 기판 및 그 제조방법 |
| FR3068506B1 (fr) | 2017-06-30 | 2020-02-21 | Soitec | Procede pour preparer un support pour une structure semi-conductrice |
| EP4557350A3 (fr) * | 2018-07-05 | 2025-08-20 | Soitec | Substrat pour un dispositif intégré radiofréquence et son procédé de fabrication |
| FR3091011B1 (fr) * | 2018-12-21 | 2022-08-05 | Soitec Silicon On Insulator | Substrat de type semi-conducteur sur isolant pour des applications radiofréquences |
| FR3104318B1 (fr) | 2019-12-05 | 2023-03-03 | Soitec Silicon On Insulator | Procédé de formation d'un support de manipulation à haute résistivité pour substrat composite |
| FR3110283B1 (fr) * | 2020-05-18 | 2022-04-15 | Soitec Silicon On Insulator | Procédé de fabrication d’un substrat semi-conducteur sur isolant pour applications radiofréquences |
| JP2021190660A (ja) * | 2020-06-04 | 2021-12-13 | 株式会社Sumco | 貼り合わせウェーハ用の支持基板 |
| CN111979524B (zh) * | 2020-08-19 | 2021-12-14 | 福建省晋华集成电路有限公司 | 一种多晶硅层形成方法、多晶硅层以及半导体结构 |
| FR3116151A1 (fr) | 2020-11-10 | 2022-05-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d’une structure de piegeage d’un substrat utile |
| FR3117668B1 (fr) | 2020-12-16 | 2022-12-23 | Commissariat Energie Atomique | Structure amelioree de substrat rf et procede de realisation |
| FR3134239B1 (fr) * | 2022-03-30 | 2025-02-14 | Soitec Silicon On Insulator | Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI) |
| US20240030222A1 (en) * | 2022-07-20 | 2024-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trapping layer for a radio frequency die and methods of formation |
| WO2024115411A1 (fr) | 2022-11-29 | 2024-06-06 | Soitec | Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes |
| WO2024115410A1 (fr) | 2022-11-29 | 2024-06-06 | Soitec | Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes. |
| WO2024115414A1 (fr) | 2022-11-29 | 2024-06-06 | Soitec | Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes |
| FR3146020B1 (fr) | 2023-02-20 | 2025-07-18 | Soitec Silicon On Insulator | Support comprenant une couche de piégeage de charges, substrat composite comprenant un tel support et procédé de fabrication associés |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0864851A (ja) | 1994-06-14 | 1996-03-08 | Sanyo Electric Co Ltd | 光起電力素子及びその製造方法 |
| JP2907128B2 (ja) * | 1996-07-01 | 1999-06-21 | 日本電気株式会社 | 電界効果型トランジスタ及びその製造方法 |
| CN1856873A (zh) * | 2003-09-26 | 2006-11-01 | 卢万天主教大学 | 制造具有降低的欧姆损耗的多层半导体结构的方法 |
| US7202124B2 (en) * | 2004-10-01 | 2007-04-10 | Massachusetts Institute Of Technology | Strained gettering layers for semiconductor processes |
| WO2009004889A1 (ja) * | 2007-07-04 | 2009-01-08 | Shin-Etsu Handotai Co., Ltd. | 薄膜シリコンウェーハ及びその作製法 |
| FR2953640B1 (fr) * | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
| US8536021B2 (en) * | 2010-12-24 | 2013-09-17 | Io Semiconductor, Inc. | Trap rich layer formation techniques for semiconductor devices |
| FR2973158B1 (fr) * | 2011-03-22 | 2014-02-28 | Soitec Silicon On Insulator | Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences |
| US8741739B2 (en) * | 2012-01-03 | 2014-06-03 | International Business Machines Corporation | High resistivity silicon-on-insulator substrate and method of forming |
| FR2999801B1 (fr) * | 2012-12-14 | 2014-12-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure |
| JP5978986B2 (ja) * | 2012-12-26 | 2016-08-24 | 信越半導体株式会社 | 高周波半導体装置及び高周波半導体装置の製造方法 |
| US8951896B2 (en) * | 2013-06-28 | 2015-02-10 | International Business Machines Corporation | High linearity SOI wafer for low-distortion circuit applications |
| US9768056B2 (en) * | 2013-10-31 | 2017-09-19 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition |
| US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
| WO2017142849A1 (en) * | 2016-02-19 | 2017-08-24 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a buried high resistivity layer |
| CN108022934A (zh) * | 2016-11-01 | 2018-05-11 | 沈阳硅基科技有限公司 | 一种薄膜的制备方法 |
| US10468486B2 (en) * | 2017-10-30 | 2019-11-05 | Taiwan Semiconductor Manufacturing Company Ltd. | SOI substrate, semiconductor device and method for manufacturing the same |
-
2016
- 2016-02-26 FR FR1651642A patent/FR3048306B1/fr active Active
-
2017
- 2017-02-23 JP JP2018544865A patent/JP6981629B2/ja active Active
- 2017-02-23 EP EP17710350.4A patent/EP3420583B1/fr active Active
- 2017-02-23 SG SG11201807197PA patent/SG11201807197PA/en unknown
- 2017-02-23 SG SG10201913216XA patent/SG10201913216XA/en unknown
- 2017-02-23 US US16/080,279 patent/US11251265B2/en active Active
- 2017-02-23 WO PCT/FR2017/050400 patent/WO2017144821A1/fr not_active Ceased
- 2017-02-23 KR KR1020187025017A patent/KR102687932B1/ko active Active
- 2017-02-23 CN CN201780013336.3A patent/CN109155276B/zh active Active
- 2017-02-24 TW TW106106332A patent/TWI787172B/zh active
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