JP2018041932A5 - - Google Patents
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- Publication number
- JP2018041932A5 JP2018041932A5 JP2016177019A JP2016177019A JP2018041932A5 JP 2018041932 A5 JP2018041932 A5 JP 2018041932A5 JP 2016177019 A JP2016177019 A JP 2016177019A JP 2016177019 A JP2016177019 A JP 2016177019A JP 2018041932 A5 JP2018041932 A5 JP 2018041932A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- electrode
- semiconductor layer
- layer
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 47
- 150000004767 nitrides Chemical class 0.000 claims 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016177019A JP6640687B2 (ja) | 2016-09-09 | 2016-09-09 | 半導体装置 |
| US15/441,497 US9917182B1 (en) | 2016-09-09 | 2017-02-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016177019A JP6640687B2 (ja) | 2016-09-09 | 2016-09-09 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018041932A JP2018041932A (ja) | 2018-03-15 |
| JP2018041932A5 true JP2018041932A5 (enExample) | 2018-11-01 |
| JP6640687B2 JP6640687B2 (ja) | 2020-02-05 |
Family
ID=61525639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016177019A Active JP6640687B2 (ja) | 2016-09-09 | 2016-09-09 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9917182B1 (enExample) |
| JP (1) | JP6640687B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10720497B2 (en) * | 2017-10-24 | 2020-07-21 | Raytheon Company | Transistor having low capacitance field plate structure |
| JP7214373B2 (ja) * | 2018-06-04 | 2023-01-30 | キヤノン株式会社 | 固体撮像素子及び固体撮像素子の製造方法、撮像システム |
| US11862691B2 (en) * | 2019-11-01 | 2024-01-02 | Raytheon Company | Field effect transistor having field plate |
| US12426336B2 (en) | 2020-01-10 | 2025-09-23 | Mitsubishi Electric Corporation | Semiconductor device, and method of manufacturing semiconductor device |
| US11876118B2 (en) * | 2020-02-14 | 2024-01-16 | Vanguard International Semiconductor Corporation | Semiconductor structure with gate metal layer |
| JP7472064B2 (ja) * | 2021-03-10 | 2024-04-22 | 株式会社東芝 | 半導体装置 |
| KR102666632B1 (ko) * | 2021-08-18 | 2024-05-20 | 한국과학기술원 | 효율 향상을 위한 측벽 패시베이션층을 갖는 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이 |
| KR20240001734A (ko) * | 2022-06-24 | 2024-01-04 | 삼성디스플레이 주식회사 | 표시장치 및 이의 제조 방법 |
| JP7640006B1 (ja) * | 2024-06-12 | 2025-03-05 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6480073A (en) | 1987-09-19 | 1989-03-24 | Fuji Electric Co Ltd | Semiconductor device |
| JP3217488B2 (ja) | 1992-08-28 | 2001-10-09 | 株式会社リコー | 高耐圧半導体装置 |
| JP4385206B2 (ja) * | 2003-01-07 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
| JP4836111B2 (ja) | 2004-12-15 | 2011-12-14 | 日本電信電話株式会社 | 半導体装置 |
| JP4912604B2 (ja) * | 2005-03-30 | 2012-04-11 | 住友電工デバイス・イノベーション株式会社 | 窒化物半導体ｈｅｍｔおよびその製造方法。 |
| US7855401B2 (en) * | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
| US20080014759A1 (en) * | 2006-07-12 | 2008-01-17 | Applied Materials, Inc. | Method for fabricating a gate dielectric layer utilized in a gate structure |
| JP5217151B2 (ja) * | 2006-08-25 | 2013-06-19 | 日亜化学工業株式会社 | 電界効果トランジスタ及びその製造方法 |
| JP4794655B2 (ja) * | 2009-06-09 | 2011-10-19 | シャープ株式会社 | 電界効果トランジスタ |
| US9142671B2 (en) * | 2009-10-30 | 2015-09-22 | Vanguard International Semiconductor Corporation | Lateral double-diffused metal oxide semiconductor |
| US9064945B2 (en) * | 2009-10-30 | 2015-06-23 | Alpha And Omega Semiconductor Incorporated | Normally off gallium nitride field effect transistors (FET) |
| US8624260B2 (en) | 2010-01-30 | 2014-01-07 | National Semiconductor Corporation | Enhancement-mode GaN MOSFET with low leakage current and improved reliability |
| JP2013115323A (ja) | 2011-11-30 | 2013-06-10 | Sharp Corp | 電界効果トランジスタ |
| JP2014003222A (ja) | 2012-06-20 | 2014-01-09 | Toshiba Corp | 電界効果トランジスタ |
| JP6106908B2 (ja) * | 2012-12-21 | 2017-04-05 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| JP6339762B2 (ja) * | 2013-01-17 | 2018-06-06 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置、高周波増幅器 |
| US9178016B2 (en) * | 2013-03-01 | 2015-11-03 | Infineon Technologies Austria Ag | Charge protection for III-nitride devices |
| JP6879662B2 (ja) * | 2014-12-23 | 2021-06-02 | パワー・インテグレーションズ・インコーポレーテッド | 高電子移動度トランジスタ |
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2016
- 2016-09-09 JP JP2016177019A patent/JP6640687B2/ja active Active
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2017
- 2017-02-24 US US15/441,497 patent/US9917182B1/en active Active