JP6640687B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6640687B2
JP6640687B2 JP2016177019A JP2016177019A JP6640687B2 JP 6640687 B2 JP6640687 B2 JP 6640687B2 JP 2016177019 A JP2016177019 A JP 2016177019A JP 2016177019 A JP2016177019 A JP 2016177019A JP 6640687 B2 JP6640687 B2 JP 6640687B2
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JP
Japan
Prior art keywords
electrode
insulating layer
layer
nitride semiconductor
semiconductor layer
Prior art date
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Application number
JP2016177019A
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English (en)
Japanese (ja)
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JP2018041932A5 (enExample
JP2018041932A (ja
Inventor
泰伸 斉藤
泰伸 斉藤
浩平 大麻
浩平 大麻
拓雄 菊地
拓雄 菊地
淳司 片岡
淳司 片岡
達也 白石
達也 白石
啓 吉岡
啓 吉岡
和朗 佐喜
和朗 佐喜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2016177019A priority Critical patent/JP6640687B2/ja
Priority to US15/441,497 priority patent/US9917182B1/en
Publication of JP2018041932A publication Critical patent/JP2018041932A/ja
Publication of JP2018041932A5 publication Critical patent/JP2018041932A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2016177019A 2016-09-09 2016-09-09 半導体装置 Active JP6640687B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016177019A JP6640687B2 (ja) 2016-09-09 2016-09-09 半導体装置
US15/441,497 US9917182B1 (en) 2016-09-09 2017-02-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016177019A JP6640687B2 (ja) 2016-09-09 2016-09-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2018041932A JP2018041932A (ja) 2018-03-15
JP2018041932A5 JP2018041932A5 (enExample) 2018-11-01
JP6640687B2 true JP6640687B2 (ja) 2020-02-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016177019A Active JP6640687B2 (ja) 2016-09-09 2016-09-09 半導体装置

Country Status (2)

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US (1) US9917182B1 (enExample)
JP (1) JP6640687B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10720497B2 (en) * 2017-10-24 2020-07-21 Raytheon Company Transistor having low capacitance field plate structure
JP7214373B2 (ja) * 2018-06-04 2023-01-30 キヤノン株式会社 固体撮像素子及び固体撮像素子の製造方法、撮像システム
US11862691B2 (en) * 2019-11-01 2024-01-02 Raytheon Company Field effect transistor having field plate
US12426336B2 (en) 2020-01-10 2025-09-23 Mitsubishi Electric Corporation Semiconductor device, and method of manufacturing semiconductor device
US11876118B2 (en) * 2020-02-14 2024-01-16 Vanguard International Semiconductor Corporation Semiconductor structure with gate metal layer
JP7472064B2 (ja) * 2021-03-10 2024-04-22 株式会社東芝 半導体装置
KR102666632B1 (ko) * 2021-08-18 2024-05-20 한국과학기술원 효율 향상을 위한 측벽 패시베이션층을 갖는 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이
KR20240001734A (ko) * 2022-06-24 2024-01-04 삼성디스플레이 주식회사 표시장치 및 이의 제조 방법
JP7640006B1 (ja) * 2024-06-12 2025-03-05 三菱電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (18)

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JPS6480073A (en) 1987-09-19 1989-03-24 Fuji Electric Co Ltd Semiconductor device
JP3217488B2 (ja) 1992-08-28 2001-10-09 株式会社リコー 高耐圧半導体装置
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ
JP4836111B2 (ja) 2004-12-15 2011-12-14 日本電信電話株式会社 半導体装置
JP4912604B2 (ja) * 2005-03-30 2012-04-11 住友電工デバイス・イノベーション株式会社 窒化物半導体ｈｅｍｔおよびその製造方法。
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US20080014759A1 (en) * 2006-07-12 2008-01-17 Applied Materials, Inc. Method for fabricating a gate dielectric layer utilized in a gate structure
JP5217151B2 (ja) * 2006-08-25 2013-06-19 日亜化学工業株式会社 電界効果トランジスタ及びその製造方法
JP4794655B2 (ja) * 2009-06-09 2011-10-19 シャープ株式会社 電界効果トランジスタ
US9142671B2 (en) * 2009-10-30 2015-09-22 Vanguard International Semiconductor Corporation Lateral double-diffused metal oxide semiconductor
US9064945B2 (en) * 2009-10-30 2015-06-23 Alpha And Omega Semiconductor Incorporated Normally off gallium nitride field effect transistors (FET)
US8624260B2 (en) 2010-01-30 2014-01-07 National Semiconductor Corporation Enhancement-mode GaN MOSFET with low leakage current and improved reliability
JP2013115323A (ja) 2011-11-30 2013-06-10 Sharp Corp 電界効果トランジスタ
JP2014003222A (ja) 2012-06-20 2014-01-09 Toshiba Corp 電界効果トランジスタ
JP6106908B2 (ja) * 2012-12-21 2017-04-05 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP6339762B2 (ja) * 2013-01-17 2018-06-06 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
US9178016B2 (en) * 2013-03-01 2015-11-03 Infineon Technologies Austria Ag Charge protection for III-nitride devices
JP6879662B2 (ja) * 2014-12-23 2021-06-02 パワー・インテグレーションズ・インコーポレーテッド 高電子移動度トランジスタ

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Publication number Publication date
JP2018041932A (ja) 2018-03-15
US20180076311A1 (en) 2018-03-15
US9917182B1 (en) 2018-03-13

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