FR3104318B1 - Procédé de formation d'un support de manipulation à haute résistivité pour substrat composite - Google Patents

Procédé de formation d'un support de manipulation à haute résistivité pour substrat composite Download PDF

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Publication number
FR3104318B1
FR3104318B1 FR1913781A FR1913781A FR3104318B1 FR 3104318 B1 FR3104318 B1 FR 3104318B1 FR 1913781 A FR1913781 A FR 1913781A FR 1913781 A FR1913781 A FR 1913781A FR 3104318 B1 FR3104318 B1 FR 3104318B1
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France
Prior art keywords
forming
composite substrate
high strength
handling support
substrate
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Active
Application number
FR1913781A
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English (en)
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FR3104318A1 (fr
Inventor
Youngpil Kim
Isabelle Bertrand
Christelle Veytizou
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Soitec SA
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Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1913781A priority Critical patent/FR3104318B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to EP20810977.7A priority patent/EP4070368B1/fr
Priority to KR1020227023105A priority patent/KR20220113455A/ko
Priority to PCT/EP2020/083379 priority patent/WO2021110513A1/fr
Priority to US17/755,812 priority patent/US20220399200A1/en
Priority to CN202080072021.8A priority patent/CN114556526A/zh
Priority to JP2022528307A priority patent/JP2023504597A/ja
Priority to TW109142789A priority patent/TWI851857B/zh
Publication of FR3104318A1 publication Critical patent/FR3104318A1/fr
Application granted granted Critical
Publication of FR3104318B1 publication Critical patent/FR3104318B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé de formation d'un substrat de manipulation à haute résistivité pour substrat composite, le procédé comprenant les étapes suivantes : - fournir un substrat de base en silicium ; - exposer le substrat de base à un précurseur unique de carbone à une pression inférieure à la pression atmosphérique pour former une couche de carbure de silicium polycristallin d'au moins 5 nm sur la surface du substrat de base ; et puis - faire croître une couche polycristalline de piégeage de charge sur la couche contenant du carbone. Figure à publier avec l'abrégé : Fig. 1
FR1913781A 2019-12-05 2019-12-05 Procédé de formation d'un support de manipulation à haute résistivité pour substrat composite Active FR3104318B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1913781A FR3104318B1 (fr) 2019-12-05 2019-12-05 Procédé de formation d'un support de manipulation à haute résistivité pour substrat composite
KR1020227023105A KR20220113455A (ko) 2019-12-05 2020-11-25 복합 기판용 고저항 핸들 지지체를 형성하는 방법
PCT/EP2020/083379 WO2021110513A1 (fr) 2019-12-05 2020-11-25 Procédé de formation d'un support de manipulation à haute résistivité de substrat composite
US17/755,812 US20220399200A1 (en) 2019-12-05 2020-11-25 Method for forming a high resistivity handle support for composite substrate
EP20810977.7A EP4070368B1 (fr) 2019-12-05 2020-11-25 Procédé de formation d'un support de manipulation à haute résistivité de substrat composite
CN202080072021.8A CN114556526A (zh) 2019-12-05 2020-11-25 形成用于复合衬底的高电阻率处理支撑体的方法
JP2022528307A JP2023504597A (ja) 2019-12-05 2020-11-25 複合基板のための高抵抗率ハンドル支持体を形成する方法
TW109142789A TWI851857B (zh) 2019-12-05 2020-12-04 形成用於複合基板之高電阻率處理支撐物的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1913781 2019-12-05
FR1913781A FR3104318B1 (fr) 2019-12-05 2019-12-05 Procédé de formation d'un support de manipulation à haute résistivité pour substrat composite

Publications (2)

Publication Number Publication Date
FR3104318A1 FR3104318A1 (fr) 2021-06-11
FR3104318B1 true FR3104318B1 (fr) 2023-03-03

Family

ID=69811151

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1913781A Active FR3104318B1 (fr) 2019-12-05 2019-12-05 Procédé de formation d'un support de manipulation à haute résistivité pour substrat composite

Country Status (7)

Country Link
US (1) US20220399200A1 (fr)
EP (1) EP4070368B1 (fr)
JP (1) JP2023504597A (fr)
KR (1) KR20220113455A (fr)
CN (1) CN114556526A (fr)
FR (1) FR3104318B1 (fr)
WO (1) WO2021110513A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3141592A1 (fr) * 2022-10-26 2024-05-03 Soitec Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI)
FR3141590A1 (fr) * 2022-10-26 2024-05-03 Soitec Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI)
FR3141591A1 (fr) * 2022-10-26 2024-05-03 Soitec Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI)
WO2024115414A1 (fr) 2022-11-29 2024-06-06 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes
WO2024115410A1 (fr) 2022-11-29 2024-06-06 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes.
WO2024115411A1 (fr) 2022-11-29 2024-06-06 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes
FR3146020A1 (fr) 2023-02-20 2024-08-23 Soitec Support comprenant une couche de piégeage de charges, substrat composite comprenant un tel support et procédé de fabrication associés
CN117750868B (zh) * 2024-02-20 2024-05-10 北京青禾晶元半导体科技有限责任公司 一种复合压电衬底及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3048306B1 (fr) 2016-02-26 2018-03-16 Soitec Support pour une structure semi-conductrice
FR3068506B1 (fr) 2017-06-30 2020-02-21 Soitec Procede pour preparer un support pour une structure semi-conductrice
FR3091011B1 (fr) * 2018-12-21 2022-08-05 Soitec Silicon On Insulator Substrat de type semi-conducteur sur isolant pour des applications radiofréquences

Also Published As

Publication number Publication date
FR3104318A1 (fr) 2021-06-11
KR20220113455A (ko) 2022-08-12
US20220399200A1 (en) 2022-12-15
EP4070368B1 (fr) 2023-11-08
CN114556526A (zh) 2022-05-27
WO2021110513A1 (fr) 2021-06-10
EP4070368A1 (fr) 2022-10-12
TW202205521A (zh) 2022-02-01
JP2023504597A (ja) 2023-02-06

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