EP3719849A3 - Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes - Google Patents

Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes Download PDF

Info

Publication number
EP3719849A3
EP3719849A3 EP20171113.2A EP20171113A EP3719849A3 EP 3719849 A3 EP3719849 A3 EP 3719849A3 EP 20171113 A EP20171113 A EP 20171113A EP 3719849 A3 EP3719849 A3 EP 3719849A3
Authority
EP
European Patent Office
Prior art keywords
nanowire
growth
layer
transition metal
steps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20171113.2A
Other languages
German (de)
English (en)
Other versions
EP3719849A2 (fr
Inventor
Bérangère HYOT
Benoit AMSTATT
Marie-Françoise Armand
Florian DUPONT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Aledia, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP3719849A2 publication Critical patent/EP3719849A2/fr
Publication of EP3719849A3 publication Critical patent/EP3719849A3/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02653—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Le procédé de croissance d'au moins un nanofil (3) semi-conducteur, ledit procédé de croissance comporte une étape de formation, au niveau d'un substrat (1), d'une couche de nucléation (2) pour la croissance du nanofil (3) et une étape de croissance du nanofil (3). L'étape de formation de la couche de nucléation (2) comporte les étapes suivantes : le dépôt sur le substrat (1) d'une couche d'un métal de transition (4) choisi parmi Ti, V, Cr, Zr, Nb, Mo, Hf, Ta ; la nitruration d'au moins une partie (2) de la couche de métal de transition de sorte à former une couche de métal de transition nitruré présentant une surface destinée à la croissance du nanofil (3).
EP20171113.2A 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes Pending EP3719849A3 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1260208A FR2997420B1 (fr) 2012-10-26 2012-10-26 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
PCT/EP2013/072424 WO2014064263A2 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
EP13783544.3A EP2912692B1 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP13783544.3A Division-Into EP2912692B1 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
EP13783544.3A Division EP2912692B1 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes

Publications (2)

Publication Number Publication Date
EP3719849A2 EP3719849A2 (fr) 2020-10-07
EP3719849A3 true EP3719849A3 (fr) 2021-02-24

Family

ID=47666274

Family Applications (3)

Application Number Title Priority Date Filing Date
EP13783544.3A Active EP2912692B1 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
EP20171111.6A Pending EP3739634A1 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche de neodyme nitrure obtenue en deux etapes
EP20171113.2A Pending EP3719849A3 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP13783544.3A Active EP2912692B1 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
EP20171111.6A Pending EP3739634A1 (fr) 2012-10-26 2013-10-25 Procede de croissance d'au moins un nanofil a partir d'une couche de neodyme nitrure obtenue en deux etapes

Country Status (8)

Country Link
US (2) US10636653B2 (fr)
EP (3) EP2912692B1 (fr)
JP (1) JP6367208B2 (fr)
KR (1) KR102134495B1 (fr)
CN (1) CN104871317B (fr)
BR (1) BR112015009308B1 (fr)
FR (1) FR2997420B1 (fr)
WO (1) WO2014064263A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2997557B1 (fr) 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
FR2997420B1 (fr) * 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
FR3020177B1 (fr) * 2014-04-22 2016-05-13 Commissariat Energie Atomique Dispositif optoelectronique a rendement d'extraction lumineuse ameliore
FR3029683B1 (fr) * 2014-12-05 2017-01-13 Commissariat Energie Atomique Dispositif electronique a element filaire s'etendant a partir d'une couche electriquement conductrice comportant du carbure de zirconium ou du carbure de hafnium
US10312081B2 (en) 2016-07-15 2019-06-04 University Of Kentucky Research Foundation Synthesis of metal oxide surfaces and interfaces with crystallographic control using solid-liquid-vapor etching and vapor-liquid-solid growth
FR3082657B1 (fr) * 2018-06-19 2021-01-29 Aledia Procede de fabrication d’un dispositif optoelectronique a parois de confinement lumineux auto alignes
KR20210078634A (ko) 2019-12-18 2021-06-29 덕산하이메탈(주) 메탈 나노와이어 및 그 제조방법
KR102357733B1 (ko) 2019-12-18 2022-02-04 덕산하이메탈(주) 전도층 및 그 제조방법
US20230124414A1 (en) * 2021-10-14 2023-04-20 Applied Materials, Inc. SUBSTRATE PROCESSING FOR GaN GROWTH
CN116314507B (zh) * 2023-05-19 2023-07-28 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1796180A1 (fr) * 2004-08-31 2007-06-13 Akihiko Kikuchi Élément luminescent et son procédé de fabrication
US20080261378A1 (en) * 2005-04-04 2008-10-23 Tohoku Techno Arch Co., Ltd. Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element
US20100096614A1 (en) * 2008-10-21 2010-04-22 Samsung Electronics Co., Ltd. Light-emitting diode and method of manufacturing the same
WO2011162715A1 (fr) * 2010-06-24 2011-12-29 Glo Ab Substrat comportant une couche tampon pour croissance de nanofils orientés.

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254499A (en) * 1992-07-14 1993-10-19 Micron Technology, Inc. Method of depositing high density titanium nitride films on semiconductor wafers
US6447838B1 (en) * 1993-12-10 2002-09-10 Symetrix Corporation Integrated circuit capacitors with barrier layer and process for making the same
AU1745695A (en) * 1994-06-03 1996-01-04 Materials Research Corporation A method of nitridization of titanium thin films
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5580823A (en) 1994-12-15 1996-12-03 Motorola, Inc. Process for fabricating a collimated metal layer and contact structure in a semiconductor device
US6093645A (en) * 1997-02-10 2000-07-25 Tokyo Electron Limited Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation
JP3214422B2 (ja) * 1997-12-02 2001-10-02 日本電気株式会社 半導体装置の製造装置および半導体装置の製造方法
JP2000036466A (ja) 1998-07-17 2000-02-02 Matsushita Electronics Industry Corp 半導体薄膜の形成方法、半導体装置およびその製造方法
US20020007881A1 (en) 1999-02-22 2002-01-24 Ole Daaland High corrosion resistant aluminium alloy
US6297063B1 (en) 1999-10-25 2001-10-02 Agere Systems Guardian Corp. In-situ nano-interconnected circuit devices and method for making the same
AU784574B2 (en) * 2000-05-04 2006-05-04 Qunano Ab Nanostructures
JP3882539B2 (ja) 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
US6784085B2 (en) 2000-11-30 2004-08-31 North Carolina State University MIIIN based materials and methods and apparatus for producing same
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP3631724B2 (ja) * 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
JP2003293070A (ja) 2002-03-29 2003-10-15 Japan Science & Technology Corp 高強度・高靭性Ｍｏ合金加工材とその製造方法
US7326988B2 (en) 2002-07-02 2008-02-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US20040074364A1 (en) 2002-10-22 2004-04-22 Pearl Technologies Inc. Multiple punch assembly
JP3574651B2 (ja) * 2002-12-05 2004-10-06 東京エレクトロン株式会社 成膜方法および成膜装置
US6828200B2 (en) 2003-01-03 2004-12-07 Texas Instruments Incorporated Multistage deposition that incorporates nitrogen via an intermediate step
US7432522B2 (en) * 2003-04-04 2008-10-07 Qunano Ab Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
US6818061B2 (en) * 2003-04-10 2004-11-16 Honeywell International, Inc. Method for growing single crystal GaN on silicon
JP4396816B2 (ja) * 2003-10-17 2010-01-13 日立電線株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
CN101330099B (zh) 2003-12-22 2010-12-08 皇家飞利浦电子股份有限公司 制造半导体纳米线组以及包括纳米线组的电器件
JP4545433B2 (ja) * 2003-12-26 2010-09-15 東京エレクトロン株式会社 成膜方法
US7354850B2 (en) * 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
JP4255877B2 (ja) 2004-04-30 2009-04-15 株式会社アライドマテリアル 高強度・高再結晶温度の高融点金属系合金材料とその製造方法
US7098144B2 (en) * 2004-10-21 2006-08-29 Sharp Laboratories Of America, Inc. Iridium oxide nanotubes and method for forming same
US7255745B2 (en) * 2004-10-21 2007-08-14 Sharp Laboratories Of America, Inc. Iridium oxide nanowires and method for forming same
JP2006278368A (ja) 2005-03-28 2006-10-12 Sony Corp 光源装置および表示装置
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
US8691011B2 (en) * 2006-03-08 2014-04-08 Qunano Ab Method for metal-free synthesis of epitaxial semiconductor nanowires on si
NZ570678A (en) 2006-03-10 2010-10-29 Stc Unm Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
US7968359B2 (en) 2006-03-10 2011-06-28 Stc.Unm Thin-walled structures
JP5207615B2 (ja) * 2006-10-30 2013-06-12 東京エレクトロン株式会社 成膜方法および基板処理装置
US8049203B2 (en) * 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US8183587B2 (en) * 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
CN102255018B (zh) 2006-12-22 2013-06-19 昆南诺股份有限公司 带有直立式纳米线结构的led及其制作方法
JP5253740B2 (ja) 2007-01-09 2013-07-31 学校法人上智学院 Ｉｉｉ族窒化物半導体微細柱状結晶の製造方法およびｉｉｉ族窒化物構造体
KR20150052343A (ko) * 2007-01-12 2015-05-13 큐나노 에이비 질화물 나노와이어 및 이의 제조 방법
CN101271840A (zh) 2007-03-22 2008-09-24 中芯国际集成电路制造(上海)有限公司 栅氧化层的制作方法及半导体器件的制作方法
JP5498161B2 (ja) 2007-06-06 2014-05-21 パナソニック株式会社 半導体ナノワイヤの製造方法
US8574968B2 (en) 2007-07-26 2013-11-05 Soitec Epitaxial methods and templates grown by the methods
WO2009072631A1 (fr) 2007-12-05 2009-06-11 Rohm Co., Ltd. Procédé de fabrication d'élément semi-conducteur en nitrure, et élément semi-conducteur en nitrure
JP5014217B2 (ja) 2008-03-18 2012-08-29 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体およびその製造方法
US20090289370A1 (en) * 2008-05-21 2009-11-26 Advanced Micro Devices, Inc. Low contact resistance semiconductor devices and methods for fabricating the same
JP5145120B2 (ja) 2008-05-26 2013-02-13 パナソニック株式会社 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法
KR101496151B1 (ko) 2008-06-25 2015-02-27 삼성전자주식회사 산화물 다이오드를 이용한 디스플레이 장치
US20110140072A1 (en) * 2008-08-21 2011-06-16 Nanocrystal Corporation Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
JP2010062482A (ja) 2008-09-08 2010-03-18 Covalent Materials Corp 窒化物半導体基板およびその製造方法
JP5239768B2 (ja) 2008-11-14 2013-07-17 富士通株式会社 放熱材料並びに電子機器及びその製造方法
KR101061150B1 (ko) 2009-05-22 2011-08-31 서울대학교산학협력단 발광 디바이스와 이의 제조 방법
EP2284868A1 (fr) * 2009-08-07 2011-02-16 Nxp B.V. Hétérostructure
EP2472585B1 (fr) 2009-09-30 2022-07-06 National University Corporation Hokkaido University Transistor à effet de champ et effet tunnel et procédé de fabrication associé
US20110079766A1 (en) 2009-10-01 2011-04-07 Isaac Harshman Wildeson Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate
US8563395B2 (en) * 2009-11-30 2013-10-22 The Royal Institute For The Advancement Of Learning/Mcgill University Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof
JP5464458B2 (ja) 2010-02-25 2014-04-09 国立大学法人北海道大学 半導体装置及び半導体装置の製造方法
DE102010012711A1 (de) 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
US8986835B2 (en) * 2010-04-05 2015-03-24 Purdue Research Foundation Growth process for gallium nitride porous nanorods
CN102315347B (zh) 2010-07-05 2014-01-29 展晶科技(深圳)有限公司 发光二极管磊晶结构及其制造方法
SG187213A1 (en) 2010-07-28 2013-02-28 Cggveritas Services Sa 3-d harmonic-source reverse time migration systems and methods for seismic data analysis
JP2012036418A (ja) 2010-08-03 2012-02-23 Chuo Spring Co Ltd 高強度ばねとその製造方法
JP5683388B2 (ja) 2010-08-19 2015-03-11 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US9478699B2 (en) 2010-08-26 2016-10-25 The Ohio State University Nanoscale emitters with polarization grading
KR101691906B1 (ko) 2010-09-14 2017-01-02 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광 소자 제조방법
JP5665463B2 (ja) 2010-09-30 2015-02-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体素子製造用基板およびｉｉｉ族窒化物半導体自立基板またはｉｉｉ族窒化物半導体素子の製造方法
EP2673800A4 (fr) 2011-02-10 2016-03-16 Univ Mcgill Dispositifs à nanofils semi-conducteurs à large bande et procédés de fabrication sans catalyseurs en métal étrangers
FR2973936B1 (fr) 2011-04-05 2014-01-31 Commissariat Energie Atomique Procede de croissance selective sur une structure semiconductrice
WO2012150474A1 (fr) * 2011-05-02 2012-11-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif plasmonique de surface
FR2976123B1 (fr) * 2011-06-01 2013-07-05 Commissariat Energie Atomique Structure semiconductrice destinee a emettre de la lumiere et procede de fabrication d'une telle structure
FR2997420B1 (fr) 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
FR2997557B1 (fr) * 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
US9537044B2 (en) 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1796180A1 (fr) * 2004-08-31 2007-06-13 Akihiko Kikuchi Élément luminescent et son procédé de fabrication
US20080261378A1 (en) * 2005-04-04 2008-10-23 Tohoku Techno Arch Co., Ltd. Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element
US20100096614A1 (en) * 2008-10-21 2010-04-22 Samsung Electronics Co., Ltd. Light-emitting diode and method of manufacturing the same
WO2011162715A1 (fr) * 2010-06-24 2011-12-29 Glo Ab Substrat comportant une couche tampon pour croissance de nanofils orientés.

Also Published As

Publication number Publication date
EP2912692B1 (fr) 2020-06-03
CN104871317B (zh) 2018-09-18
FR2997420B1 (fr) 2017-02-24
JP2015532261A (ja) 2015-11-09
KR20150082341A (ko) 2015-07-15
US9698011B2 (en) 2017-07-04
EP3739634A1 (fr) 2020-11-18
EP2912692A2 (fr) 2015-09-02
WO2014064263A2 (fr) 2014-05-01
KR102134495B1 (ko) 2020-07-15
CN104871317A (zh) 2015-08-26
BR112015009308B1 (pt) 2022-02-22
US20150279672A1 (en) 2015-10-01
US10636653B2 (en) 2020-04-28
BR112015009308A2 (pt) 2017-07-04
WO2014064263A3 (fr) 2014-07-17
JP6367208B2 (ja) 2018-08-01
US20140120637A1 (en) 2014-05-01
FR2997420A1 (fr) 2014-05-02
EP3719849A2 (fr) 2020-10-07

Similar Documents

Publication Publication Date Title
EP3719849A3 (fr) Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
SG10201800863VA (en) Selective deposition with atomic layer etch reset
TW200943393A (en) A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
WO2012039932A3 (fr) Procédés de formation de couches sur un substrat
WO2005084231A3 (fr) Depot de germanium
WO2011156349A3 (fr) Procédés pour former des structures d'interconnexion
WO2013049173A3 (fr) Profil enterré amélioré
WO2004027517A3 (fr) Revetements antireflets pour nanoparticules tensioactives
JP2012142629A5 (fr)
WO2010057652A8 (fr) Nanofils à la surface d'un substrat, leur procédé de fabrication et d'utilisation
FR2977260B1 (fr) Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
WO2014064264A3 (fr) Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositf
WO2008096089A3 (fr) Procede de depot de couche mince et produit obtenu
FR3047914B1 (fr) Procede et dispositif de fabrication d'une piece par depots successifs de couches
WO2010080216A3 (fr) Ajout d'un précurseur au cvd d'oxyde de silicium pour remplissage de vide amélioré à basse température
FR2984599B1 (fr) Procede de fabrication d'un micro- ou nano- fil semiconducteur, structure semiconductrice comportant un tel micro- ou nano- fil et procede de fabrication d'une structure semiconductrice
WO2013134592A3 (fr) Éléments de renforcement de dépôt de couche atomique et procédé de fabrication
JP2013529249A5 (fr)
WO2005074471A3 (fr) Procede permettant de former une structure de memoire au moyen d'une topographie de surface modifiee et structure ainsi obtenue
EP2533305A3 (fr) Procédé de passivation sans plaquettes d'une surface de silicium
EP2363511A3 (fr) Film barrière à gaz, procédé de dépôt de film et dispositif de dépôt de film
EA201001020A1 (ru) Стеклянное изделие и способ изготовления стеклянного изделия
PH12017501354A1 (en) High performance coating for high-strength steel cold metal forming
WO2013045039A3 (fr) Revêtement en nitrure d'aluminium et de titane de morphologie adaptée destiné à améliorer la résistance à l'usure dans des opérations d'usinage et procédé associé
EP2034044A3 (fr) Contrôle des impuretés dans des procédés HDP-CVD DEP/ETCH/DEP

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN PUBLISHED

AC Divisional application: reference to earlier application

Ref document number: 2912692

Country of ref document: EP

Kind code of ref document: P

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RIC1 Information provided on ipc code assigned before grant

Ipc: C30B 29/16 20060101ALI20210119BHEP

Ipc: H01L 33/20 20100101ALI20210119BHEP

Ipc: H01L 29/40 20060101AFI20210119BHEP

Ipc: H01L 21/02 20060101ALI20210119BHEP

Ipc: H01L 33/12 20100101ALI20210119BHEP

Ipc: C30B 29/40 20060101ALI20210119BHEP

Ipc: H01L 33/06 20100101ALI20210119BHEP

Ipc: C30B 29/60 20060101ALI20210119BHEP

Ipc: C30B 29/36 20060101ALI20210119BHEP

Ipc: B82Y 20/00 20110101ALI20210119BHEP

Ipc: H01L 29/66 20060101ALI20210119BHEP

Ipc: C30B 25/00 20060101ALI20210119BHEP

Ipc: H01L 29/06 20060101ALI20210119BHEP

Ipc: B82Y 10/00 20110101ALI20210119BHEP

Ipc: C30B 25/18 20060101ALI20210119BHEP

Ipc: H01L 29/41 20060101ALI20210119BHEP

Ipc: B82Y 40/00 20110101ALI20210119BHEP

Ipc: H01L 33/00 20100101ALI20210119BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20210824

RBV Designated contracting states (corrected)

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20231219