SG11201807197PA - Support for a semiconductor structure - Google Patents

Support for a semiconductor structure

Info

Publication number
SG11201807197PA
SG11201807197PA SG11201807197PA SG11201807197PA SG11201807197PA SG 11201807197P A SG11201807197P A SG 11201807197PA SG 11201807197P A SG11201807197P A SG 11201807197PA SG 11201807197P A SG11201807197P A SG 11201807197PA SG 11201807197P A SG11201807197P A SG 11201807197PA
Authority
SG
Singapore
Prior art keywords
layer
support
semiconductor structure
base substrate
polycrystalline
Prior art date
Application number
SG11201807197PA
Inventor
Christophe Figuet
Oleg Kononchuk
Kassam Alassaad
Gabriel Ferro
Véronique Souliere
Christelle Veytizou
Taguhi Yeghoyan
Original Assignee
Soitec Silicon On Insulator
Univ Claude Bernard Lyon
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, Univ Claude Bernard Lyon, Centre Nat Rech Scient filed Critical Soitec Silicon On Insulator
Publication of SG11201807197PA publication Critical patent/SG11201807197PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
  • Silicon Compounds (AREA)
  • Element Separation (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)

Abstract

SUPPORT FOR A SEMICONDUCTOR STRUCTURE The invention relates to a support (1) for a semiconductor structure comprising a charge-trapping layer (2) on a base substrate (3). The trapping layer (2) consists of a polycrystalline main layer (2a) and, interposed in the main layer (2a) or between the main layer (2a) and the base substrate (3), at least one intermediate polycrystalline layer (2b) composed of a silicon and carbon alloy or carbon, the intermediate layer (2b) having a resistivity greater than 1000 ohm.cm. Figure 1
SG11201807197PA 2016-02-26 2017-02-23 Support for a semiconductor structure SG11201807197PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1651642A FR3048306B1 (en) 2016-02-26 2016-02-26 SUPPORT FOR A SEMICONDUCTOR STRUCTURE
PCT/FR2017/050400 WO2017144821A1 (en) 2016-02-26 2017-02-23 Carrier for a semiconductor structure

Publications (1)

Publication Number Publication Date
SG11201807197PA true SG11201807197PA (en) 2018-09-27

Family

ID=55650590

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201807197PA SG11201807197PA (en) 2016-02-26 2017-02-23 Support for a semiconductor structure
SG10201913216XA SG10201913216XA (en) 2016-02-26 2017-02-23 Support for a semiconductor structure

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201913216XA SG10201913216XA (en) 2016-02-26 2017-02-23 Support for a semiconductor structure

Country Status (9)

Country Link
US (1) US11251265B2 (en)
EP (1) EP3420583B1 (en)
JP (1) JP6981629B2 (en)
KR (1) KR20190013696A (en)
CN (1) CN109155276B (en)
FR (1) FR3048306B1 (en)
SG (2) SG11201807197PA (en)
TW (1) TWI787172B (en)
WO (1) WO2017144821A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102109292B1 (en) * 2016-04-05 2020-05-11 가부시키가이샤 사이콕스 Polycrystalline SiC substrate and its manufacturing method
WO2020008116A1 (en) * 2018-07-05 2020-01-09 Soitec Substrate for an integrated radiofrequency device, and process for manufacturing same
FR3091011B1 (en) * 2018-12-21 2022-08-05 Soitec Silicon On Insulator SEMICONDUCTOR SUBSTRATE ON INSULATION FOR RADIO FREQUENCY APPLICATIONS
FR3104318B1 (en) 2019-12-05 2023-03-03 Soitec Silicon On Insulator METHOD FOR FORMING A HIGH STRENGTH HANDLING SUPPORT FOR COMPOSITE SUBSTRATE
JP2021190660A (en) * 2020-06-04 2021-12-13 株式会社Sumco Support substrate for bonded wafers
CN111979524B (en) * 2020-08-19 2021-12-14 福建省晋华集成电路有限公司 Polycrystalline silicon layer forming method, polycrystalline silicon layer and semiconductor structure
FR3116151A1 (en) 2020-11-10 2022-05-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR FORMING A USEFUL SUBSTRATE TRAPPING STRUCTURE
FR3117668B1 (en) 2020-12-16 2022-12-23 Commissariat Energie Atomique IMPROVED RF SUBSTRATE STRUCTURE AND METHOD OF MAKING
FR3134239A1 (en) * 2022-03-30 2023-10-06 Soitec Piezoelectric substrate on insulator (POI) and method of manufacturing a piezoelectric substrate on insulator (POI)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864851A (en) 1994-06-14 1996-03-08 Sanyo Electric Co Ltd Photovoltaic element and fabrication thereof
JP2907128B2 (en) * 1996-07-01 1999-06-21 日本電気株式会社 Field effect transistor and method for manufacturing the same
US20070032040A1 (en) * 2003-09-26 2007-02-08 Dimitri Lederer Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses
US7202124B2 (en) * 2004-10-01 2007-04-10 Massachusetts Institute Of Technology Strained gettering layers for semiconductor processes
WO2009004889A1 (en) * 2007-07-04 2009-01-08 Shin-Etsu Handotai Co., Ltd. Thin film silicon wafer and its fabricating method
FR2953640B1 (en) * 2009-12-04 2012-02-10 S O I Tec Silicon On Insulator Tech METHOD FOR MANUFACTURING A SEMICONDUCTOR TYPE STRUCTURE ON INSULATION, WITH REDUCED ELECTRICAL LOSSES AND CORRESPONDING STRUCTURE
US8536021B2 (en) * 2010-12-24 2013-09-17 Io Semiconductor, Inc. Trap rich layer formation techniques for semiconductor devices
US8741739B2 (en) * 2012-01-03 2014-06-03 International Business Machines Corporation High resistivity silicon-on-insulator substrate and method of forming
FR2999801B1 (en) * 2012-12-14 2014-12-26 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A STRUCTURE
US8951896B2 (en) * 2013-06-28 2015-02-10 International Business Machines Corporation High linearity SOI wafer for low-distortion circuit applications
US9768056B2 (en) * 2013-10-31 2017-09-19 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition
US9853133B2 (en) * 2014-09-04 2017-12-26 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity silicon-on-insulator substrate
WO2017142849A1 (en) * 2016-02-19 2017-08-24 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a buried high resistivity layer
CN108022934A (en) * 2016-11-01 2018-05-11 沈阳硅基科技有限公司 A kind of preparation method of film
US10468486B2 (en) * 2017-10-30 2019-11-05 Taiwan Semiconductor Manufacturing Company Ltd. SOI substrate, semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
EP3420583B1 (en) 2021-08-04
TW201742108A (en) 2017-12-01
US11251265B2 (en) 2022-02-15
FR3048306A1 (en) 2017-09-01
JP2019512870A (en) 2019-05-16
SG10201913216XA (en) 2020-02-27
EP3420583A1 (en) 2019-01-02
FR3048306B1 (en) 2018-03-16
JP6981629B2 (en) 2021-12-15
WO2017144821A1 (en) 2017-08-31
US20190058031A1 (en) 2019-02-21
CN109155276A (en) 2019-01-04
KR20190013696A (en) 2019-02-11
TWI787172B (en) 2022-12-21
CN109155276B (en) 2023-01-17

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