MY177552A - A method of fabricating a resistive gas sensor device - Google Patents

A method of fabricating a resistive gas sensor device

Info

Publication number
MY177552A
MY177552A MYPI2012701100A MYPI2012701100A MY177552A MY 177552 A MY177552 A MY 177552A MY PI2012701100 A MYPI2012701100 A MY PI2012701100A MY PI2012701100 A MYPI2012701100 A MY PI2012701100A MY 177552 A MY177552 A MY 177552A
Authority
MY
Malaysia
Prior art keywords
layer
fabricating
sensor device
gas sensor
depositing
Prior art date
Application number
MYPI2012701100A
Inventor
Hing Wah Lee
Bien Chia Sheng Daniel
Aun Shih Teh
Wai Yee Lee
Anuar Abd Wahid Khairul
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Priority to MYPI2012701100A priority Critical patent/MY177552A/en
Priority to PCT/MY2013/000225 priority patent/WO2014088403A1/en
Publication of MY177552A publication Critical patent/MY177552A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02653—Vapour-liquid-solid growth

Abstract

A method of fabricating a resistive gas sensor device is provided, the method includes the steps of, depositing an insulating layer (105) on a silicon substrate layer (101) and depositing a conductive metal layer (103) onto the insulating layer (105), characterized in that, the method further includes the steps of depositing a thin metallic catalyst layer (107) covering a surface of the conductive metal layer (103) and etching the metal catalyst layer (107) and growing nanostructures (109) from the metal catalyst layer (107) that is exposed, such that the nanostructures (109) are interconnected with each other and the conductive metal layer (103).
MYPI2012701100A 2012-12-07 2012-12-07 A method of fabricating a resistive gas sensor device MY177552A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MYPI2012701100A MY177552A (en) 2012-12-07 2012-12-07 A method of fabricating a resistive gas sensor device
PCT/MY2013/000225 WO2014088403A1 (en) 2012-12-07 2013-12-03 A resistive gas sensor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2012701100A MY177552A (en) 2012-12-07 2012-12-07 A method of fabricating a resistive gas sensor device

Publications (1)

Publication Number Publication Date
MY177552A true MY177552A (en) 2020-09-18

Family

ID=50023815

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012701100A MY177552A (en) 2012-12-07 2012-12-07 A method of fabricating a resistive gas sensor device

Country Status (2)

Country Link
MY (1) MY177552A (en)
WO (1) WO2014088403A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2527340A (en) * 2014-06-19 2015-12-23 Applied Nanodetectors Ltd Gas sensors and gas sensor arrays
CN105510390B (en) * 2016-01-18 2019-01-04 郑州轻工业学院 A kind of multilevel structure nanometer In2O3/ graphene composite material and its preparation method and application
AT519492B1 (en) * 2016-12-22 2019-03-15 Mat Center Leoben Forschung Gmbh Sensor arrangement for determining and optionally measuring a concentration of a plurality of gases and method for producing a sensor arrangement
CN107345818B (en) * 2017-06-29 2020-05-15 上海集成电路研发中心有限公司 Preparation method of graphene-based sensor
LU100442B1 (en) * 2017-09-19 2019-03-19 Luxembourg Inst Science & Tech List Gas sensor device with high sensitivity at low temperature and method of fabrication thereof
AT521213B1 (en) * 2018-05-04 2022-12-15 Mat Center Leoben Forschung Gmbh Method of making a sensor and sensor made therewith
CN109142467A (en) * 2018-07-23 2019-01-04 杭州电子科技大学 A kind of high sensitive NO2Gas sensor and preparation method thereof
CN112713181B (en) * 2020-12-28 2022-08-05 光华临港工程应用技术研发(上海)有限公司 Preparation method of gas sensor and gas sensor
CN114354724B (en) * 2022-01-11 2022-11-22 山西大学 Metal oxide semiconductor gas sensor and preparation method and application thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1247089B1 (en) * 1999-12-15 2008-07-23 Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube devices
WO2008153593A1 (en) * 2006-11-10 2008-12-18 Bourns Inc. Nanomaterial-based gas sensors
KR20090064693A (en) 2007-12-17 2009-06-22 한국전자통신연구원 Micro gas sensor and manufacturing method thereof

Also Published As

Publication number Publication date
WO2014088403A1 (en) 2014-06-12

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