JP2018536990A5 - - Google Patents

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Publication number
JP2018536990A5
JP2018536990A5 JP2018523481A JP2018523481A JP2018536990A5 JP 2018536990 A5 JP2018536990 A5 JP 2018536990A5 JP 2018523481 A JP2018523481 A JP 2018523481A JP 2018523481 A JP2018523481 A JP 2018523481A JP 2018536990 A5 JP2018536990 A5 JP 2018536990A5
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Japan
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substrate
back side
annealing
film
chamber
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JP2018523481A
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English (en)
Japanese (ja)
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JP6971229B2 (ja
JP2018536990A (ja
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Priority claimed from PCT/US2016/056220 external-priority patent/WO2017083037A1/en
Publication of JP2018536990A publication Critical patent/JP2018536990A/ja
Publication of JP2018536990A5 publication Critical patent/JP2018536990A5/ja
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JP2018523481A 2015-11-09 2016-10-10 底部処理 Active JP6971229B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562252901P 2015-11-09 2015-11-09
US62/252,901 2015-11-09
US201662306150P 2016-03-10 2016-03-10
US62/306,150 2016-03-10
PCT/US2016/056220 WO2017083037A1 (en) 2015-11-09 2016-10-10 Bottom processing

Publications (3)

Publication Number Publication Date
JP2018536990A JP2018536990A (ja) 2018-12-13
JP2018536990A5 true JP2018536990A5 (enExample) 2019-11-21
JP6971229B2 JP6971229B2 (ja) 2021-11-24

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ID=58663719

Family Applications (1)

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JP2018523481A Active JP6971229B2 (ja) 2015-11-09 2016-10-10 底部処理

Country Status (7)

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US (1) US10128197B2 (enExample)
JP (1) JP6971229B2 (enExample)
KR (2) KR102584138B1 (enExample)
CN (3) CN108352298B (enExample)
DE (1) DE112016005136T5 (enExample)
TW (2) TWI675393B (enExample)
WO (1) WO2017083037A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10418264B2 (en) * 2016-06-08 2019-09-17 Hermes-Epitek Corporation Assembling device used for semiconductor equipment
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10916416B2 (en) * 2017-11-14 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with modified surface and fabrication method thereof
KR102787198B1 (ko) * 2017-12-01 2025-03-25 어플라이드 머티어리얼스, 인코포레이티드 고 에칭 선택성 비정질 탄소 막
JP2020047617A (ja) * 2018-09-14 2020-03-26 キオクシア株式会社 基板処理装置、半導体装置の製造方法、および被加工基板
DE102019211447B4 (de) * 2019-07-31 2023-06-01 Robert Bosch Gmbh Verfahren zum Laserrichten von Führungsschienen
WO2022232224A1 (en) * 2021-04-27 2022-11-03 Applied Materials, Inc. Stress and overlay management for semiconductor processing
CN115812345A (zh) 2021-06-30 2023-03-17 长江存储科技有限责任公司 三维存储器装置及其形成方法
WO2023272627A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
WO2023272638A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
CN116018889A (zh) 2021-06-30 2023-04-25 长江存储科技有限责任公司 三维存储器装置及其形成方法
WO2023272592A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
CN115803882A (zh) 2021-06-30 2023-03-14 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN116368952A (zh) 2021-06-30 2023-06-30 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN113906542A (zh) * 2021-08-30 2022-01-07 长江存储科技有限责任公司 使用背面膜层沉积和激光退火的晶圆应力控制
US12094726B2 (en) 2021-12-13 2024-09-17 Applied Materials, Inc. Adapting electrical, mechanical, and thermal properties of package substrates
JP2023183276A (ja) * 2022-06-15 2023-12-27 キオクシア株式会社 接合装置、接合方法、及び半導体装置の製造方法
TW202431354A (zh) * 2022-09-28 2024-08-01 美商應用材料股份有限公司 應力管理期間全域曲率的校正
CN115642112A (zh) * 2022-11-24 2023-01-24 西安奕斯伟材料科技有限公司 一种用于硅片的背封装置及背封方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296385A (en) 1991-12-31 1994-03-22 Texas Instruments Incorporated Conditioning of semiconductor wafers for uniform and repeatable rapid thermal processing
JPH05315371A (ja) * 1992-05-12 1993-11-26 Fujitsu Ltd 化合物半導体装置の製造方法
US6207005B1 (en) 1997-07-29 2001-03-27 Silicon Genesis Corporation Cluster tool apparatus using plasma immersion ion implantation
JP3161450B2 (ja) * 1999-02-02 2001-04-25 日本電気株式会社 基板処理装置、ガス供給方法、及び、レーザ光供給方法
JP3505678B2 (ja) * 1999-08-25 2004-03-08 住友重機械工業株式会社 ウエハの歪修正装置
JP2001274048A (ja) * 2000-03-24 2001-10-05 Hitachi Ltd 半導体装置の製造方法及び加工装置
KR20020034492A (ko) 2000-11-02 2002-05-09 박종섭 반도체 소자의 제조방법
JP4653374B2 (ja) * 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
US7208380B2 (en) 2004-03-22 2007-04-24 Texas Instruments Incorporated Interface improvement by stress application during oxide growth through use of backside films
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7432177B2 (en) 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation
JP2007194514A (ja) * 2006-01-23 2007-08-02 Mitsubishi Electric Corp 半導体装置の製造方法
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
US20080128019A1 (en) * 2006-12-01 2008-06-05 Applied Materials, Inc. Method of metallizing a solar cell substrate
US8846532B2 (en) 2007-02-28 2014-09-30 Alpha And Omega Semiconductor Incorporated Method and apparatus for ultra thin wafer backside processing
US7776746B2 (en) 2007-02-28 2010-08-17 Alpha And Omega Semiconductor Incorporated Method and apparatus for ultra thin wafer backside processing
TWI395272B (zh) 2008-05-02 2013-05-01 Applied Materials Inc 用於旋轉基板之非徑向溫度控制系統
US20090278287A1 (en) * 2008-05-12 2009-11-12 Yun Wang Substrate processing with reduced warpage and/or controlled strain
US20100109060A1 (en) 2008-11-06 2010-05-06 Omnivision Technologies Inc. Image sensor with backside photodiode implant
JP2010225830A (ja) 2009-03-24 2010-10-07 Mitsumi Electric Co Ltd 半導体装置の製造方法
CN102576692B (zh) * 2009-07-15 2014-11-26 斯兰纳半导体美国股份有限公司 具有背侧体区连接的绝缘体上半导体
TWI396771B (zh) * 2009-08-25 2013-05-21 羅門哈斯電子材料有限公司 形成矽化鎳之強化方法
JP2011119472A (ja) * 2009-12-03 2011-06-16 Panasonic Corp 半導体製造装置
JP5615207B2 (ja) * 2011-03-03 2014-10-29 株式会社東芝 半導体装置の製造方法
CN102420176A (zh) * 2011-06-15 2012-04-18 上海华力微电子有限公司 一种改善半导体晶片翘曲的方法
US8466530B2 (en) 2011-06-30 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Co-implant for backside illumination sensor
CN106847737B (zh) * 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
CN103094098A (zh) * 2013-01-14 2013-05-08 陆伟 一种解决晶圆破片的方法
US9318367B2 (en) * 2013-02-27 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structure with different fin heights and method for forming the same
JP2015012241A (ja) * 2013-07-01 2015-01-19 ソニー株式会社 撮像素子およびその製造方法、ならびに電子機器
KR102133490B1 (ko) * 2013-11-11 2020-07-13 에스케이하이닉스 주식회사 트랜지스터, 트랜지스터의 제조 방법 및 트랜지스터를 포함하는 전자장치
WO2015157507A1 (en) * 2014-04-09 2015-10-15 Tokyo Electron Limited Method for correcting wafer bow from overlay
US9159621B1 (en) * 2014-04-29 2015-10-13 Applied Materials, Inc. Dicing tape protection for wafer dicing using laser scribe process
JP6510310B2 (ja) * 2014-05-12 2019-05-08 ローム株式会社 半導体装置
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
WO2015195272A1 (en) * 2014-06-20 2015-12-23 Applied Materials, Inc. Methods for reducing semiconductor substrate strain variation
US9613870B2 (en) * 2015-06-30 2017-04-04 International Business Machines Corporation Gate stack formed with interrupted deposition processes and laser annealing

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