JP2018536990A5 - - Google Patents

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Publication number
JP2018536990A5
JP2018536990A5 JP2018523481A JP2018523481A JP2018536990A5 JP 2018536990 A5 JP2018536990 A5 JP 2018536990A5 JP 2018523481 A JP2018523481 A JP 2018523481A JP 2018523481 A JP2018523481 A JP 2018523481A JP 2018536990 A5 JP2018536990 A5 JP 2018536990A5
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Japan
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substrate
back side
annealing
film
chamber
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JP2018523481A
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English (en)
Japanese (ja)
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JP2018536990A (ja
JP6971229B2 (ja
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Priority claimed from PCT/US2016/056220 external-priority patent/WO2017083037A1/en
Publication of JP2018536990A publication Critical patent/JP2018536990A/ja
Publication of JP2018536990A5 publication Critical patent/JP2018536990A5/ja
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JP2018523481A 2015-11-09 2016-10-10 底部処理 Active JP6971229B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562252901P 2015-11-09 2015-11-09
US62/252,901 2015-11-09
US201662306150P 2016-03-10 2016-03-10
US62/306,150 2016-03-10
PCT/US2016/056220 WO2017083037A1 (en) 2015-11-09 2016-10-10 Bottom processing

Publications (3)

Publication Number Publication Date
JP2018536990A JP2018536990A (ja) 2018-12-13
JP2018536990A5 true JP2018536990A5 (enExample) 2019-11-21
JP6971229B2 JP6971229B2 (ja) 2021-11-24

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ID=58663719

Family Applications (1)

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JP2018523481A Active JP6971229B2 (ja) 2015-11-09 2016-10-10 底部処理

Country Status (7)

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US (1) US10128197B2 (enExample)
JP (1) JP6971229B2 (enExample)
KR (2) KR102742588B1 (enExample)
CN (3) CN116435167A (enExample)
DE (1) DE112016005136T5 (enExample)
TW (2) TWI729498B (enExample)
WO (1) WO2017083037A1 (enExample)

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CN115812345A (zh) 2021-06-30 2023-03-17 长江存储科技有限责任公司 三维存储器装置及其形成方法
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